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      Home / All Categories / Integrated Circuits (ICs) / Memory /

      The category is 'Memory'

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      • Power Supplies:

        2.5/3.3 V

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      GS8321E36AD-250

      Mfr Part No

      GS8321E36AD-250

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      8 Weeks

      BGA-165

      YES

      165

      5.5 ns

      250 MHz

      SDR

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS8321E36AD-250

      250 MHz

      181.8@Flow-Through/250@Pipelined MHz

      2.7, 3.6 V

      + 70 C

      2.3, 3 V

      0 C

      Surface Mount

      SMD/SMT

      36 Bit

      1 MWords

      1000000

      85 °C

      PLASTIC/EPOXY

      LBGA

      LBGA, BGA165,11X15,40

      BGA165,11X15,40

      RECTANGULAR

      GRID ARRAY, LOW PROFILE

      Active

      BGA

      NOT SPECIFIED

      4.95

      No

      FBGA

      3.6 V

      2.3 V

      2.5 V

      Synchronous

      2.5, 3.3 V

      Commercial grade

      0 to 85 °C

      GS8321E36AD

      e0

      No

      3A991.B.2.B

      TIN LEAD

      IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

      SRAMs

      CMOS

      BOTTOM

      BALL

      NOT SPECIFIED

      1

      1 mm

      compliant

      165

      R-PBGA-B165

      Not Qualified

      2.7 V

      2.5/3.3 V

      OTHER

      2.3 V

      36 Mbit

      4

      SYNCHRONOUS

      0.26 mA

      5.5 ns

      Flow-Through/Pipelined

      1MX36

      3-STATE

      1.4 mm

      36

      20 Bit

      36 Mbit

      0.03 A

      37748736 bit

      Commercial

      PARALLEL

      COMMON

      CACHE SRAM

      2.3 V

      15 mm

      13 mm

      GS880E36CGT-200I

      Mfr Part No

      GS880E36CGT-200I

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      8 Weeks

      TQFP-100

      YES

      100

      6.5 ns

      GSI Technology

      72

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS880E36CGT-200I

      200 MHz

      + 85 C

      SDR

      - 40 C

      Yes

      3

      SMD/SMT

      262144 words

      256000

      85 °C

      -40 °C

      PLASTIC/EPOXY

      LQFP

      LQFP, QFP100,.63X.87

      QFP100,.63X.87

      RECTANGULAR

      FLATPACK, LOW PROFILE

      Active

      QFP

      NOT SPECIFIED

      5.61

      Compliant

      Yes

      3.6 V

      2.3 V

      2.5 V

      SyncBurst

      Tray

      GS880E36CGT

      e3

      Yes

      3A991.B.2.B

      DCD

      PURE MATTE TIN

      85 °C

      -40 °C

      PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

      8542.32.00.41

      Memory & Data Storage

      CMOS

      QUAD

      GULL WING

      260

      1

      0.65 mm

      compliant

      100

      R-PQFP-G100

      Not Qualified

      2.7 V

      2.5/3.3 V

      INDUSTRIAL

      2.3 V

      9 Mbit

      2

      SYNCHRONOUS

      160 mA, 190 mA

      6.5 ns

      256 k x 36

      3-STATE

      1.6 mm

      36

      18 b

      SRAM

      9 Mb

      0.045 A

      9437184 bit

      PARALLEL

      COMMON

      CACHE SRAM

      2.3 V

      SRAM

      20 mm

      14 mm

      No

      GS88018CGT-250

      Mfr Part No

      GS88018CGT-250

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      8 Weeks

      TQFP-100

      YES

      100

      5.5 ns

      GSI Technology

      250 MHz

      72

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS88018CGT-250

      250 MHz

      + 70 C

      SDR

      0 C

      Yes

      3

      SMD/SMT

      524288 words

      512000

      70 °C

      PLASTIC/EPOXY

      LQFP

      LQFP, QFP100,.63X.87

      QFP100,.63X.87

      RECTANGULAR

      FLATPACK, LOW PROFILE

      Active

      QFP

      NOT SPECIFIED

      5.3

      Compliant

      Yes

      3.6 V

      2.3 V

      2.5 V

      SyncBurst

      Tray

      GS88018CGT

      e3

      Yes

      3A991.B.2.B

      Pipeline/Flow Through

      PURE MATTE TIN

      70 °C

      0 °C

      FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

      8542.32.00.41

      Memory & Data Storage

      CMOS

      QUAD

      GULL WING

      260

      1

      0.65 mm

      compliant

      100

      R-PQFP-G100

      Not Qualified

      2.7 V

      2.5/3.3 V

      COMMERCIAL

      2.3 V

      9 Mbit

      2

      SYNCHRONOUS

      145 mA, 180 mA

      5.5 ns

      512 k x 18

      3-STATE

      1.6 mm

      18

      19 b

      SRAM

      9 Mb

      0.025 A

      9437184 bit

      PARALLEL

      COMMON

      CACHE SRAM

      2.3 V

      SRAM

      20 mm

      14 mm

      No

      GS832136AD-250I

      Mfr Part No

      GS832136AD-250I

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      8 Weeks

      BGA-165

      YES

      165

      5.5 ns

      GSI Technology

      250 MHz

      SDR

      18

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS832136AD-250I

      250 MHz

      2.7, 3.6 V

      + 85 C

      SDR

      2.3, 3 V

      - 40 C

      Yes

      Surface Mount

      SMD/SMT

      36 Bit

      1 MWords

      1000000

      85 °C

      -40 °C

      PLASTIC/EPOXY

      LBGA

      LBGA, BGA165,11X15,40

      BGA165,11X15,40

      RECTANGULAR

      GRID ARRAY, LOW PROFILE

      Active

      BGA

      5.16

      Compliant

      No

      FBGA

      3.6 V

      2.3 V

      2.5 V

      Synchronous

      SyncBurst

      2.5, 3.3 V

      Industrial grade

      -40 to 100 °C

      Bulk

      GS832136AD

      3A991.B.2.B

      Pipeline/Flow Through

      100 °C

      -40 °C

      PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

      8542.32.00.41

      Memory & Data Storage

      CMOS

      BOTTOM

      BALL

      1

      1 mm

      compliant

      165

      R-PBGA-B165

      Not Qualified

      2.7 V

      2.5/3.3 V

      INDUSTRIAL

      2.3 V

      36 Mbit

      4

      SYNCHRONOUS

      250 mA, 305 mA

      5.5 ns

      Flow-Through/Pipelined

      1 M x 36

      3-STATE

      1.4 mm

      36

      20 b

      SRAM

      36 Mbit

      0.04 A

      37748736 bit

      Industrial

      PARALLEL

      COMMON

      CACHE SRAM

      2.3 V

      SRAM

      15 mm

      13 mm

      No

      GS8320E32AGT-250

      Mfr Part No

      GS8320E32AGT-250

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      8 Weeks

      TQFP-100

      YES

      100

      5.5 ns

      GSI Technology

      250 MHz

      SDR

      18

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS8320E32AGT-250

      250 MHz

      181.8@Flow-Through/250@Pipelined MHz

      2, 2.7 V

      + 70 C

      SDR

      1.7, 2.3 V

      0 C

      Yes

      Surface Mount

      SMD/SMT

      32 Bit

      1 MWords

      1000000

      70 °C

      PLASTIC/EPOXY

      LQFP

      LQFP, QFP100,.63X.87

      QFP100,.63X.87

      RECTANGULAR

      FLATPACK, LOW PROFILE

      Active

      QFP

      NOT SPECIFIED

      5.38

      Details

      Yes

      TQFP

      3.6 V

      2.3 V

      1.8 V

      Synchronous

      SyncBurst

      1.8, 2.5 V

      Commercial grade

      0 to 85 °C

      Tray

      GS8320E32AGT

      3A991.B.2.B

      Pipeline/Flow Through

      85 °C

      0 °C

      ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

      8542.32.00.41

      Memory & Data Storage

      CMOS

      QUAD

      GULL WING

      NOT SPECIFIED

      1

      0.65 mm

      compliant

      100

      R-PQFP-G100

      Not Qualified

      2 V

      2.5/3.3 V

      COMMERCIAL

      1.7 V

      36 Mbit

      4

      SYNCHRONOUS

      230 mA, 285 mA

      5.5 ns

      Flow-Through/Pipelined

      1 M x 32

      3-STATE

      1.6 mm

      32

      20 Bit

      SRAM

      36 Mbit

      0.03 A

      33554432 bit

      Commercial

      PARALLEL

      COMMON

      CACHE SRAM

      2.3 V

      SRAM

      20 mm

      14 mm

      No

      GS832032GT-133I

      Mfr Part No

      GS832032GT-133I

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      YES

      100

      8.5 ns

      133 MHz

      GSI TECHNOLOGY

      GSI Technology

      GS832032GT-133I

      3

      1048576 words

      1000000

      85 °C

      -40 °C

      PLASTIC/EPOXY

      LQFP

      LQFP, QFP100,.63X.87

      QFP100,.63X.87

      RECTANGULAR

      FLATPACK, LOW PROFILE

      Obsolete

      QFP

      NOT SPECIFIED

      5.7

      Yes

      2.5 V

      e3

      Yes

      3A991.B.2.B

      PURE MATTE TIN

      FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

      8542.32.00.41

      SRAMs

      CMOS

      QUAD

      GULL WING

      260

      1

      0.65 mm

      compliant

      100

      R-PQFP-G100

      Not Qualified

      2.7 V

      2.5/3.3 V

      INDUSTRIAL

      2.3 V

      SYNCHRONOUS

      0.21 mA

      1MX32

      3-STATE

      1.6 mm

      32

      0.08 A

      33554432 bit

      PARALLEL

      COMMON

      CACHE SRAM

      3.14 V

      20 mm

      14 mm

      M25P40-VMC6TGB

      Mfr Part No

      M25P40-VMC6TGB

      		Micron Datasheet

      -

      -

      Min: 1

      Mult: 1

      YES

      8

      50 MHz

      MICRON TECHNOLOGY INC

      Micron Technology Inc

      M25P40-VMC6TGB

      524288 words

      512000

      85 °C

      -40 °C

      PLASTIC/EPOXY

      SON

      SON, SOLCC8,.12,32

      SOLCC8,.12,32

      RECTANGULAR

      SMALL OUTLINE

      Obsolete

      30

      5.7

      Yes

      Yes

      NOR TYPE

      Flash Memories

      CMOS

      DUAL

      NO LEAD

      260

      0.8 mm

      unknown

      R-PDSO-N8

      Not Qualified

      2.5/3.3 V

      INDUSTRIAL

      0.015 mA

      512KX8

      8

      0.00001 A

      4194304 bit

      SERIAL

      FLASH

      2.7 V

      SPI

      100000 Write/Erase Cycles

      20

      HARDWARE/SOFTWARE

      GS832136AD-150I

      Mfr Part No

      GS832136AD-150I

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      8 Weeks

      BGA-165

      YES

      165

      7.5 ns

      150 MHz

      SDR

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS832136AD-150I

      150 MHz

      133.3@Flow-Through/150@Pipelined MHz

      2.7, 3.6 V

      + 85 C

      2.3, 3 V

      - 40 C

      Surface Mount

      SMD/SMT

      36 Bit

      1 MWords

      1000000

      85 °C

      -40 °C

      PLASTIC/EPOXY

      LBGA

      LBGA, BGA165,11X15,40

      BGA165,11X15,40

      RECTANGULAR

      GRID ARRAY, LOW PROFILE

      Active

      BGA

      5.16

      No

      FBGA

      3.6 V

      2.3 V

      2.5 V

      Synchronous

      2.5, 3.3 V

      Industrial grade

      -40 to 100 °C

      3A991.B.2.B

      PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

      8542.32.00.41

      SRAMs

      CMOS

      BOTTOM

      BALL

      1

      1 mm

      compliant

      165

      R-PBGA-B165

      Not Qualified

      2.7 V

      2.5/3.3 V

      INDUSTRIAL

      2.3 V

      36 Mbit

      4

      SYNCHRONOUS

      210 mA, 220 mA

      7.5 ns

      Flow-Through/Pipelined

      1 M x 36

      3-STATE

      1.4 mm

      36

      20 Bit

      36 Mbit

      0.04 A

      37748736 bit

      Industrial

      PARALLEL

      COMMON

      CACHE SRAM

      2.3 V

      15 mm

      13 mm

      GS832236AB-150

      Mfr Part No

      GS832236AB-150

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      8 Weeks

      BGA-119

      YES

      119

      7.5 ns

      GSI Technology

      150 MHz

      SDR

      14

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS832236AB-150

      150 MHz

      133@Flow-Through/150@Pipelined MHz

      2.7, 3.6 V

      + 70 C

      SDR

      2.3, 3 V

      0 C

      Yes

      Surface Mount

      SMD/SMT

      36 Bit

      1 MWords

      1000000

      70 °C

      PLASTIC/EPOXY

      BGA

      BGA, BGA119,7X17,50

      BGA119,7X17,50

      RECTANGULAR

      GRID ARRAY

      Active

      BGA

      NOT SPECIFIED

      5.12

      N

      No

      FBGA

      3.6 V

      2.3 V

      2.5 V

      Synchronous

      SyncBurst

      2.5, 3.3 V

      Commercial grade

      0 to 85 °C

      Tray

      GS832236AB

      e0

      No

      3A991.B.2.B

      Pipeline/Flow Through

      Tin/Lead (Sn/Pb)

      ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

      8542.32.00.41

      Memory & Data Storage

      CMOS

      BOTTOM

      BALL

      NOT SPECIFIED

      1

      1.27 mm

      compliant

      119

      R-PBGA-B119

      Not Qualified

      2.7 V

      2.5/3.3 V

      COMMERCIAL

      2.3 V

      36 Mbit

      4

      SYNCHRONOUS

      190 mA, 200 mA

      7.5 ns

      Flow-Through/Pipelined

      1 M x 36

      3-STATE

      1.99 mm

      36

      20 Bit

      SRAM

      36 Mbit

      0.03 A

      37748736 bit

      Commercial

      PARALLEL

      COMMON

      CACHE SRAM

      2.3 V

      SRAM

      22 mm

      14 mm

      GS8322Z18AGD-250

      Mfr Part No

      GS8322Z18AGD-250

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      8 Weeks

      BGA-165

      YES

      165

      5.5 ns

      250 MHz

      SDR

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS8322Z18AGD-250

      250 MHz

      181.8@Flow-Through/250@Pipelined MHz

      2.7, 3.6 V

      + 70 C

      2.3, 3 V

      0 C

      3

      Surface Mount

      SMD/SMT

      18 Bit

      2 MWords

      2000000

      70 °C

      PLASTIC/EPOXY

      LBGA

      LBGA, BGA165,11X15,40

      BGA165,11X15,40

      RECTANGULAR

      GRID ARRAY, LOW PROFILE

      Active

      BGA

      NOT SPECIFIED

      5.13

      Yes

      FBGA

      3.6 V

      2.3 V

      2.5 V

      Synchronous

      2.5, 3.3 V

      Commercial grade

      0 to 85 °C

      e1

      Yes

      3A991.B.2.B

      Tin/Silver/Copper (Sn/Ag/Cu)

      ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

      8542.32.00.41

      SRAMs

      CMOS

      BOTTOM

      BALL

      260

      1

      1 mm

      compliant

      165

      R-PBGA-B165

      Not Qualified

      2.7 V

      2.5/3.3 V

      COMMERCIAL

      2.3 V

      36 Mbit

      2

      SYNCHRONOUS

      215 mA, 255 mA

      5.5 ns

      Flow-Through/Pipelined

      2 M x 18

      3-STATE

      1.4 mm

      18

      21 Bit

      36 Mbit

      0.03 A

      37748736 bit

      Commercial

      PARALLEL

      COMMON

      ZBT SRAM

      2.3 V

      15 mm

      13 mm

      GS8321E36AD-150

      Mfr Part No

      GS8321E36AD-150

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      8 Weeks

      BGA-165

      YES

      165

      7.5 ns

      150 MHz

      SDR

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS8321E36AD-150

      150 MHz

      2.7, 3.6 V

      + 70 C

      2.3, 3 V

      0 C

      Surface Mount

      SMD/SMT

      36 Bit

      1 MWords

      1000000

      85 °C

      PLASTIC/EPOXY

      LBGA

      LBGA, BGA165,11X15,40

      BGA165,11X15,40

      RECTANGULAR

      GRID ARRAY, LOW PROFILE

      Active

      BGA

      NOT SPECIFIED

      5.31

      No

      FBGA

      3.6 V

      2.3 V

      2.5 V

      Synchronous

      2.5, 3.3 V

      Commercial grade

      0 to 85 °C

      e0

      No

      3A991.B.2.B

      TIN LEAD

      IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

      SRAMs

      CMOS

      BOTTOM

      BALL

      NOT SPECIFIED

      1

      1 mm

      compliant

      165

      R-PBGA-B165

      Not Qualified

      2.7 V

      2.5/3.3 V

      OTHER

      2.3 V

      36 Mbit

      4

      SYNCHRONOUS

      190 mA, 200 mA

      7.5 ns

      Flow-Through/Pipelined

      1 M x 36

      3-STATE

      1.4 mm

      36

      36 Mbit

      0.03 A

      37748736 bit

      Commercial

      PARALLEL

      COMMON

      CACHE SRAM

      2.3 V

      15 mm

      13 mm

      GS832132AD-250

      Mfr Part No

      GS832132AD-250

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      8 Weeks

      BGA-165

      YES

      165

      5.5 ns

      GSI Technology

      250 MHz

      18

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS832132AD-250

      250 MHz

      181.8@Flow-Through/250@Pipelined MHz

      2.7, 3.6 V

      + 70 C

      SDR

      2.3, 3 V

      0 C

      Yes

      SMD/SMT

      32 Bit

      1048576 words

      1000000

      85 °C

      PLASTIC/EPOXY

      LBGA

      LBGA, BGA165,11X15,40

      BGA165,11X15,40

      RECTANGULAR

      GRID ARRAY, LOW PROFILE

      Active

      BGA

      5.16

      N

      No

      FBGA

      3.6 V

      2.3 V

      2.5 V

      Synchronous

      SyncBurst

      2.5, 3.3 V

      Commercial grade

      0 to 85 °C

      Tray

      GS832132AD

      3A991.B.2.B

      Pipeline/Flow Through

      PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

      8542.32.00.41

      Memory & Data Storage

      CMOS

      BOTTOM

      BALL

      1

      1 mm

      compliant

      165

      R-PBGA-B165

      Not Qualified

      2.7 V

      2.5/3.3 V

      OTHER

      2.3 V

      36 Mbit

      SYNCHRONOUS

      230 mA, 285 mA

      5.5@Flow-Through/2.5

      1 M x 32

      3-STATE

      1.4 mm

      32

      SRAM

      0.03 A

      36

      Commercial

      PARALLEL

      COMMON

      CACHE SRAM

      2.3 V

      SRAM

      15 mm

      13 mm

      GS832132AD-200

      Mfr Part No

      GS832132AD-200

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      8 Weeks

      BGA-165

      YES

      165

      6.5 ns

      GSI Technology

      200 MHz

      18

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS832132AD-200

      200 MHz

      153.8@Flow-Through/200@Pipelined MHz

      2.7, 3.6 V

      + 70 C

      SDR

      2.3, 3 V

      0 C

      Yes

      SMD/SMT

      32 Bit

      1048576 words

      1000000

      85 °C

      PLASTIC/EPOXY

      LBGA

      LBGA, BGA165,11X15,40

      BGA165,11X15,40

      RECTANGULAR

      GRID ARRAY, LOW PROFILE

      Active

      BGA

      5.16

      N

      No

      FBGA

      3.6 V

      2.3 V

      2.5 V

      Synchronous

      SyncBurst

      2.5, 3.3 V

      Commercial grade

      0 to 85 °C

      Tray

      GS832132AD

      3A991.B.2.B

      Pipeline/Flow Through

      PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

      8542.32.00.41

      Memory & Data Storage

      CMOS

      BOTTOM

      BALL

      1

      1 mm

      compliant

      165

      R-PBGA-B165

      Not Qualified

      2.7 V

      2.5/3.3 V

      OTHER

      2.3 V

      36 Mbit

      SYNCHRONOUS

      205 mA, 240 mA

      6.5@Flow-Through/3@P

      1 M x 32

      3-STATE

      1.4 mm

      32

      SRAM

      0.03 A

      36

      Commercial

      PARALLEL

      COMMON

      CACHE SRAM

      2.3 V

      SRAM

      15 mm

      13 mm

      GS8322Z36AGD-150

      Mfr Part No

      GS8322Z36AGD-150

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      8 Weeks

      BGA-165

      YES

      165

      7.5 ns

      150 MHz

      SDR

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS8322Z36AGD-150

      150 MHz

      133.3@Flow-Through/150@Pipelined MHz

      2.7, 3.6 V

      + 70 C

      2.3, 3 V

      0 C

      3

      Surface Mount

      SMD/SMT

      36 Bit

      1 MWords

      1000000

      70 °C

      PLASTIC/EPOXY

      LBGA

      LBGA, BGA165,11X15,40

      BGA165,11X15,40

      RECTANGULAR

      GRID ARRAY, LOW PROFILE

      Active

      BGA

      NOT SPECIFIED

      5.12

      Yes

      FBGA

      3.6 V

      2.3 V

      2.5 V

      Synchronous

      2.5, 3.3 V

      Commercial grade

      0 to 85 °C

      e1

      Yes

      3A991.B.2.B

      Tin/Silver/Copper (Sn/Ag/Cu)

      ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

      8542.32.00.41

      SRAMs

      CMOS

      BOTTOM

      BALL

      260

      1

      1 mm

      compliant

      165

      R-PBGA-B165

      Not Qualified

      2.7 V

      2.5/3.3 V

      COMMERCIAL

      2.3 V

      36 Mbit

      4

      SYNCHRONOUS

      190 mA, 200 mA

      7.5 ns

      Flow-Through/Pipelined

      1 M x 36

      3-STATE

      1.4 mm

      36

      20 Bit

      36 Mbit

      0.03 A

      37748736 bit

      Commercial

      PARALLEL

      COMMON

      ZBT SRAM

      2.3 V

      15 mm

      13 mm

      GS8322Z18AB-250I

      Mfr Part No

      GS8322Z18AB-250I

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      8 Weeks

      BGA-119

      YES

      119

      5.5 ns

      GSI Technology

      250 MHz

      SDR

      14

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS8322Z18AB-250I

      250 MHz

      181.8@Flow-Through/250@Pipelined MHz

      2.7, 3.6 V

      + 85 C

      SDR

      2.3, 3 V

      - 40 C

      Yes

      Surface Mount

      SMD/SMT

      18 Bit

      2 MWords

      2000000

      85 °C

      -40 °C

      PLASTIC/EPOXY

      BGA

      BGA, BGA119,7X17,50

      BGA119,7X17,50

      RECTANGULAR

      GRID ARRAY

      Active

      BGA

      NOT SPECIFIED

      5.13

      No

      FBGA

      3.6 V

      2.3 V

      2.5 V

      Synchronous

      NBT SRAM

      2.5, 3.3 V

      Industrial grade

      -40 to 100 °C

      Tray

      GS8322Z18AB

      e0

      No

      3A991.B.2.B

      NBT Pipeline/Flow Through

      Tin/Lead (Sn/Pb)

      ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

      8542.32.00.41

      Memory & Data Storage

      CMOS

      BOTTOM

      BALL

      NOT SPECIFIED

      1

      1.27 mm

      compliant

      119

      R-PBGA-B119

      Not Qualified

      2.7 V

      2.5/3.3 V

      INDUSTRIAL

      2.3 V

      36 Mbit

      2

      SYNCHRONOUS

      235 mA, 275 mA

      5.5 ns

      Flow-Through/Pipelined

      2 M x 18

      3-STATE

      1.99 mm

      18

      21 Bit

      SRAM

      36 Mbit

      0.04 A

      37748736 bit

      Industrial

      PARALLEL

      COMMON

      ZBT SRAM

      2.3 V

      SRAM

      22 mm

      14 mm

      GS8322Z36AGD-250

      Mfr Part No

      GS8322Z36AGD-250

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      8 Weeks

      BGA-165

      YES

      165

      5.5 ns

      GSI Technology

      250 MHz

      SDR

      14

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS8322Z36AGD-250

      250 MHz

      181.8@Flow-Through/250@Pipelined MHz

      2.7, 3.6 V

      + 70 C

      SDR

      2.3, 3 V

      0 C

      Yes

      3

      Surface Mount

      SMD/SMT

      36 Bit

      1 MWords

      1000000

      70 °C

      PLASTIC/EPOXY

      LBGA

      LBGA, BGA165,11X15,40

      BGA165,11X15,40

      RECTANGULAR

      GRID ARRAY, LOW PROFILE

      Active

      BGA

      NOT SPECIFIED

      4.57

      Details

      Yes

      FBGA

      3.6 V

      2.3 V

      2.5 V

      Synchronous

      NBT SRAM

      2.5, 3.3 V

      0.324050 oz

      Commercial grade

      0 to 85 °C

      Tray

      GS8322Z36AGD

      e1

      Yes

      3A991.B.2.B

      NBT Pipeline/Flow Through

      Tin/Silver/Copper (Sn/Ag/Cu)

      ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

      8542.32.00.41

      Memory & Data Storage

      CMOS

      BOTTOM

      BALL

      260

      1

      1 mm

      compliant

      165

      R-PBGA-B165

      Not Qualified

      2.7 V

      2.5/3.3 V

      COMMERCIAL

      2.3 V

      36 Mbit

      4

      SYNCHRONOUS

      230 mA, 285 mA

      5.5 ns

      Flow-Through/Pipelined

      1 M x 36

      3-STATE

      1.4 mm

      36

      20 Bit

      SRAM

      36 Mbit

      0.03 A

      37748736 bit

      Commercial

      PARALLEL

      COMMON

      ZBT SRAM

      2.3 V

      SRAM

      15 mm

      13 mm

      GS8321E18AGD-150I

      Mfr Part No

      GS8321E18AGD-150I

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      8 Weeks

      BGA-165

      YES

      165

      7.5 ns

      150 MHz

      SDR

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS8321E18AGD-150I

      150 MHz

      133@Flow-Through/150@Pipelined MHz

      2.7, 3.6 V

      + 85 C

      2.3, 3 V

      - 40 C

      3

      Surface Mount

      SMD/SMT

      18 Bit

      2 MWords

      2000000

      85 °C

      -40 °C

      PLASTIC/EPOXY

      LBGA

      LBGA, BGA165,11X15,40

      BGA165,11X15,40

      RECTANGULAR

      GRID ARRAY, LOW PROFILE

      Active

      BGA

      NOT SPECIFIED

      5.31

      Yes

      FBGA

      3.6 V

      2.3 V

      2.5 V

      Synchronous

      2.5, 3.3 V

      Industrial grade

      -40 to 100 °C

      GS8321E18AGD

      e1

      Yes

      3A991.B.2.B

      TIN SILVER COPPER

      IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

      SRAMs

      CMOS

      BOTTOM

      BALL

      260

      1

      1 mm

      compliant

      165

      R-PBGA-B165

      Not Qualified

      2.7 V

      2.5/3.3 V

      INDUSTRIAL

      2.3 V

      36 Mbit

      2

      SYNCHRONOUS

      195 mA, 210 mA

      7.5 ns

      Flow-Through/Pipelined

      2 M x 18

      3-STATE

      1.4 mm

      18

      21 Bit

      36 Mbit

      0.04 A

      37748736 bit

      Industrial

      PARALLEL

      COMMON

      CACHE SRAM

      2.3 V

      15 mm

      13 mm

      GS841Z36CGT-100I

      Mfr Part No

      GS841Z36CGT-100I

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      7 Weeks

      TQFP-100

      YES

      100

      12 ns

      GSI Technology

      100 MHz

      72

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS841Z36CGT-100I

      100 MHz

      + 85 C

      SDR

      - 40 C

      Yes

      SMD/SMT

      131072 words

      128000

      85 °C

      -40 °C

      PLASTIC/EPOXY

      LQFP

      LQFP, QFP100,.63X.87

      QFP100,.63X.87

      RECTANGULAR

      FLATPACK, LOW PROFILE

      Active

      QFP

      NOT SPECIFIED

      5.39

      Details

      Yes

      3.6 V

      2.3 V

      2.5 V

      NBT SRAM

      Tray

      GS841Z36CGT

      3A991.B.2.B

      NBT Pipeline/Flow Through

      FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

      8542.32.00.41

      Memory & Data Storage

      CMOS

      QUAD

      GULL WING

      NOT SPECIFIED

      1

      0.65 mm

      compliant

      100

      R-PQFP-G100

      Not Qualified

      2.7 V

      2.5/3.3 V

      INDUSTRIAL

      2.3 V

      4 Mbit

      SYNCHRONOUS

      130 mA, 140 mA

      12 ns

      128 k x 36

      3-STATE

      1.6 mm

      36

      SRAM

      0.045 A

      4718592 bit

      PARALLEL

      COMMON

      ZBT SRAM

      2.3 V

      SRAM

      20 mm

      14 mm

      GS832136AGD-200I

      Mfr Part No

      GS832136AGD-200I

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      8 Weeks

      BGA-165

      YES

      165

      6.5 ns

      GSI Technology

      200 MHz

      SDR

      18

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS832136AGD-200I

      200 MHz

      153.8@Flow-Through/200@Pipelined MHz

      2.7, 3.6 V

      + 85 C

      SDR

      2.3, 3 V

      - 40 C

      Yes

      Surface Mount

      SMD/SMT

      36 Bit

      1 MWords

      1000000

      85 °C

      -40 °C

      PLASTIC/EPOXY

      LBGA

      LBGA, BGA165,11X15,40

      BGA165,11X15,40

      RECTANGULAR

      GRID ARRAY, LOW PROFILE

      Active

      BGA

      NOT SPECIFIED

      5.16

      Details

      Yes

      FBGA

      3.6 V

      2.3 V

      2.5 V

      Synchronous

      SyncBurst

      2.5, 3.3 V

      Industrial grade

      -40 to 100 °C

      Tray

      GS832136AGD

      3A991.B.2.B

      Pipeline/Flow Through

      PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

      8542.32.00.41

      Memory & Data Storage

      CMOS

      BOTTOM

      BALL

      NOT SPECIFIED

      1

      1 mm

      compliant

      165

      R-PBGA-B165

      Not Qualified

      2.7 V

      2.5/3.3 V

      INDUSTRIAL

      2.3 V

      36 Mbit

      4

      SYNCHRONOUS

      225 mA, 260 mA

      6.5 ns

      Flow-Through/Pipelined

      1 M x 36

      3-STATE

      1.4 mm

      36

      20 Bit

      SRAM

      36 Mbit

      0.04 A

      37748736 bit

      Industrial

      PARALLEL

      COMMON

      CACHE SRAM

      2.3 V

      SRAM

      15 mm

      13 mm

      GS880E32CGT-300I

      Mfr Part No

      GS880E32CGT-300I

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      8 Weeks

      TQFP-100

      YES

      100

      5 ns

      GSI Technology

      SDR

      36

      GSI TECHNOLOGY

      Parallel

      GSI Technology

      GS880E32CGT-300I

      300 MHz

      200@Flow-Through/300@Pipelined MHz

      2.7, 3.6 V

      + 85 C

      SDR

      2.3, 3 V

      - 40 C

      Yes

      3

      Surface Mount

      SMD/SMT

      32 Bit

      256 kWords

      256000

      85 °C

      -40 °C

      PLASTIC/EPOXY

      LQFP

      LQFP, QFP100,.63X.87

      QFP100,.63X.87

      RECTANGULAR

      FLATPACK, LOW PROFILE

      Active

      QFP

      NOT SPECIFIED

      5.61

      Details

      Yes

      TQFP

      3.6 V

      2.3 V

      2.5 V

      Synchronous

      SyncBurst

      2.5, 3.3 V

      Industrial grade

      -40 to 85 °C

      Tray

      GS880E32CGT

      e3

      Yes

      3A991.B.2.B

      DCD

      PURE MATTE TIN

      PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

      8542.32.00.41

      Memory & Data Storage

      CMOS

      QUAD

      GULL WING

      260

      1

      0.65 mm

      compliant

      100

      R-PQFP-G100

      Not Qualified

      2.7 V

      2.5/3.3 V

      INDUSTRIAL

      2.3 V

      9 Mbit

      2

      SYNCHRONOUS

      185 mA, 245 mA

      5 ns

      Flow-Through/Pipelined

      256 k x 32

      3-STATE

      1.6 mm

      32

      18 Bit

      SRAM

      8 Mbit

      0.045 A

      8388608 bit

      Industrial

      PARALLEL

      COMMON

      CACHE SRAM

      2.3 V

      SRAM

      20 mm

      14 mm