Shop the Latest Memory at Richard Electronics

The category is 'Memory'

Memory (384)

All Manufacturers
Ihs Manufacturer
JESD-30 Code
Manufacturer Part Number
Memory Density
Memory IC Type
Memory Width
Number of Terminals
Number of Words
Number of Words Code
Operating Temperature-Max
Package Body Material
Power Supplies

Power Supplies:
2.5/3.3 V

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Mounting Type	Package / Case	Surface Mount	Supplier Device Package	Number of Terminals	Access Time-Max	Base Product Number	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Mfr	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Samacsys Description	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Voltage - Supply	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Clock Frequency	Supply Current-Max	Access Time	Memory Format	Memory Interface	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Write Cycle Time - Word, Page	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Memory Organization	Length	Width	Radiation Hardening
Mfr Part No GS880F18CGT-6.5	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		TQFP-100	YES		100	6.5 ns		GSI Technology	153 MHz		72	GSI TECHNOLOGY	Parallel	GSI Technology	GS880F18CGT-6.5				+ 70 C	SDR			0 C	Yes	3		SMD/SMT		524288 words	512000	70 °C			PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	5.36	Compliant	Yes			3.6 V	2.3 V	2.5 V		SyncBurst				Tray	GS880F18CGT	e3	Yes	3A991.B.2.B	Flow Through	PURE MATTE TIN	70 °C	0 °C	FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	9 Mbit	2	SYNCHRONOUS		130 mA	6.5 ns				512 k x 18	3-STATE	1.6 mm	18		18 b	SRAM	9 Mb	0.025 A	9437184 bit		PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM		20 mm	14 mm	No
Mfr Part No GS8320E32AGT-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	9 Weeks, 6 Days		TQFP-100	YES		100	5.5 ns		GSI Technology	250 MHz		18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8320E32AGT-250I	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes			SMD/SMT	32 Bit	1048576 words	1000000	85 °C	-40 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	1.79	Compliant	Yes	SRAM 2.5 or 3.3V 1M x 32 32M	TQFP	3.6 V	2.3 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Bulk	GS8320E32AGT			3A991.B.2.B	Pipeline/Flow Through		100 °C	-40 °C	ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	2.5/3.3 V	INDUSTRIAL	1.7 V	36 Mbit	4	SYNCHRONOUS		250 mA, 305 mA	5.5@Flow-Through/3@P				1 M x 32	3-STATE	1.6 mm	32		20 b	SRAM	36 Mb	0.04 A	36	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM		20 mm	14 mm	No
Mfr Part No GS8320Z36AGT-150I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks, 5 Days		TQFP-100	YES		100	7.5 ns		GSI Technology	150 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8320Z36AGT-150I	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C	-40 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	1.69	Details	Yes		TQFP	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS8320Z36AGT			3A991.B.2.B	NBT Pipeline/Flow Through		100 °C	-40 °C	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		Memory & Data Storage	CMOS		QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit	4	SYNCHRONOUS		210 mA, 220 mA	7.5 ns			Flow-Through/Pipelined	1 M x 36	3-STATE	1.6 mm	36		20 Bit	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM		20 mm	14 mm	No
Mfr Part No GS832236AB-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		BGA-119	YES		119	5.5 ns		GSI Technology	250 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS832236AB-250	250 MHz		2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	70 °C			PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	5.12	Compliant	No		FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Bulk	GS832236AB	e0	No	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)	85 °C	0 °C	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	4	SYNCHRONOUS		230 mA, 285 mA	5.5 ns			Flow-Through/Pipelined	1 M x 36	3-STATE	1.99 mm	36		20 b	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM		22 mm	14 mm	No
Mfr Part No GS832236AGB-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		BGA-119	YES		119	5.5 ns			250 MHz	SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS832236AGB-250	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 70 C			2.3, 3 V	0 C		3	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	70 °C			PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	5.12	Compliant	Yes		FBGA	3.6 V	2.3 V	2.5 V	Synchronous		2.5, 3.3 V	Commercial grade	0 to 85 °C	Bulk		e1	Yes	3A991.B.2.B		Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	0 °C	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	SRAMs	CMOS		BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	4	SYNCHRONOUS		230 mA, 285 mA	5.5 ns			Flow-Through/Pipelined	1 M x 36	3-STATE	1.99 mm	36		20 Bit		36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V			22 mm	14 mm	No
Mfr Part No GS880E18CGT-300I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		TQFP-100	YES		100	5 ns		GSI Technology	300 MHz	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS880E18CGT-300I	300 MHz	200@Flow-Through/300@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	85 °C	-40 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	5.6	Compliant	Yes		TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS880E18CGT	e3	Yes	3A991.B.2.B	DCD	PURE MATTE TIN	85 °C	-40 °C	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	9 Mbit	2	SYNCHRONOUS		170 mA, 225 mA	5 ns			Flow-Through/Pipelined	512 k x 18	3-STATE	1.6 mm	18		18 Bit	SRAM	9 Mbit	0.045 A	9437184 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM		20 mm	14 mm	No
Mfr Part No GS8322Z18AB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		BGA-119	YES		119	6.5 ns		GSI Technology	200 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z18AB-200	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C			PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	5.13	Compliant	No		FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Bulk	GS8322Z18AB	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)	85 °C	0 °C	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	2	SYNCHRONOUS		185 mA, 220 mA	6.5 ns			Flow-Through/Pipelined	2 M x 18	3-STATE	1.99 mm	18		21 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM		22 mm	14 mm	No
Mfr Part No GS832236AB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		BGA-119	YES		119	6.5 ns		GSI Technology	200 MHz		14	GSI TECHNOLOGY	Parallel	GSI Technology	GS832236AB-200	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes			SMD/SMT	36 Bit	1048576 words	1000000	70 °C			PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	5.12	N	No		FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS832236AB	e0	No	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)	85 °C	0 °C	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	4	SYNCHRONOUS		205 mA, 240 mA	6.5@Flow-Through/3@P				1 M x 36	3-STATE	1.99 mm	36		20 b	SRAM	36 Mb	0.03 A	36	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM		22 mm	14 mm	No
Mfr Part No GS832118AD-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		BGA-165	YES		165	7.5 ns		GSI Technology	150 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832118AD-150	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	85 °C			PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA			5.16	N	No		FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS832118AD			3A991.B.2.B	Pipeline/Flow Through		85 °C	0 °C	PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL		1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	OTHER	2.3 V	36 Mbit	2	SYNCHRONOUS		175 mA, 190 mA	7.5 ns			Flow-Through/Pipelined	2 M x 18	3-STATE	1.4 mm	18		21 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM		15 mm	13 mm	No
Mfr Part No GS832236AD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		BGA-165	YES		165	6.5 ns		GSI Technology	200 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832236AD-200	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	70 °C			PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	5.12	N	No		FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS832236AD	e0	No	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)	85 °C	0 °C	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	4	SYNCHRONOUS		205 mA, 240 mA	6.5 ns			Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36		20 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM		15 mm	13 mm	No
Mfr Part No GS8321E18AD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		BGA-165	YES		165	6.5 ns		GSI Technology	200 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E18AD-200	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	85 °C			PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	5.31	Compliant	No		FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Bulk	GS8321E18AD	e0	No	3A991.B.2.B	DCD Pipeline/Flow Through	TIN LEAD	85 °C	0 °C	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	OTHER	2.3 V	36 Mbit	2	SYNCHRONOUS		185 mA, 220 mA	6.5 ns			Flow-Through/Pipelined	2 M x 18	3-STATE	1.4 mm	18		21 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM		15 mm	13 mm	No
Mfr Part No GS832272C-133I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		BGA-209	YES		209	8.5 ns			133 MHz	SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS832272C-133I	133 MHz	117.6@Flow-Through/133@Pipelined MHz	2.7, 3.6 V	+ 85 C			2.3, 3 V	- 40 C		3	Surface Mount	SMD/SMT	72 Bit	512 kWords	512000	85 °C	-40 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA209,11X19,40	BGA209,11X19,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	5.13		No		FBGA	3.6 V	2.3 V	2.5 V	Synchronous		2.5, 3.3 V	Industrial grade	-40 to 85 °C		GS832272C		No	3A991.B.2.B					FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	SRAMs	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	209	R-PBGA-B209	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit	8	SYNCHRONOUS		0.255 mA	8.5 ns			Flow-Through/Pipelined	512KX72	3-STATE	1.7 mm	72		19 Bit		36 Mbit	0.08 A	37748736 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.38 V			22 mm	14 mm
Mfr Part No GS8322Z36AGD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		BGA-165	YES		165	6.5 ns		GSI Technology	200 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z36AGD-200	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	70 °C			PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	5.12	Details	Yes		FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8322Z36AGD	e1	Yes	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	4	SYNCHRONOUS		205 mA, 240 mA	6.5 ns			Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36		20 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM		15 mm	13 mm
Mfr Part No GS88036CGT-300I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	Surface Mount	TQFP-100	YES	100-TQFP (20x14)	100	5 ns	GS88036	GSI Technology		SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS88036CGT-300I	300 MHz	200@Flow-Through/300@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	GSI Technology Inc.	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	85 °C	-40 °C	Tray	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	Active	NOT SPECIFIED	1.66	Details	Yes		TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS88036CGT	e3	Yes	3A991.B.2.B	Pipeline/Flow Through	PURE MATTE TIN			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	SRAM - Synchronous, Standard	2.3V ~ 2.7V, 3V ~ 3.6V	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	9 Mbit	4	SYNCHRONOUS	300 MHz	185 mA, 245 mA	5 ns	SRAM	Parallel	Flow-Through/Pipelined	256 k x 36	3-STATE	1.6 mm	36	-	18 Bit	SRAM	9 Mbit	0.045 A	9437184 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	256K x 36	20 mm	14 mm
Mfr Part No GS832236AGB-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		BGA-119	YES		119	7.5 ns		GSI Technology	150 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS832236AGB-150	150 MHz	133@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	70 °C			PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	5.12	Details	Yes		FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS832236AGB	e1	Yes	3A991.B.2.B	Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	4	SYNCHRONOUS		190 mA, 200 mA	7.5 ns			Flow-Through/Pipelined	1 M x 36	3-STATE	1.99 mm	36		20 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM		22 mm	14 mm
Mfr Part No GS832118AD-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		BGA-165	YES		165	5.5 ns			250 MHz	SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS832118AD-250I	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 85 C			2.3, 3 V	- 40 C			Surface Mount	SMD/SMT	18 Bit	2 MWords	1000000	85 °C	-40 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA			5.16		No		FBGA	3.6 V	2.3 V	2.5 V	Synchronous		2.5, 3.3 V	Industrial grade	-40 to 100 °C					3A991.B.2.B					PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY	8542.32.00.41	SRAMs	CMOS		BOTTOM	BALL		1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit	2	SYNCHRONOUS		235 mA, 275 mA	5.5 ns			Flow-Through/Pipelined	2 M x 18	3-STATE	1.4 mm	18		21 Bit		36 Mbit	0.04 A	18874368 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V			15 mm	13 mm
Mfr Part No GS832236AB-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		BGA-119	YES		119	5.5 ns			250 MHz			GSI TECHNOLOGY	Parallel	GSI Technology	GS832236AB-250I	250 MHz		2.7, 3.6 V	+ 85 C			2.3, 3 V	- 40 C				SMD/SMT	36 Bit	1048576 words	1000000	85 °C	-40 °C		PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA		NOT SPECIFIED	5.12		No		FBGA	3.6 V	2.3 V	2.5 V	Synchronous		2.5, 3.3 V		-40 to 100 °C			e0	No	3A991.B.2.B		Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	SRAMs	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit		SYNCHRONOUS		250 mA, 305 mA	5.5@Flow-Through/2.5				1 M x 36	3-STATE	1.99 mm	36					0.04 A	36		PARALLEL	COMMON	CACHE SRAM	2.3 V			22 mm	14 mm
Mfr Part No GS832236AD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		BGA-165	YES		165	6.5 ns		GSI Technology	200 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832236AD-200I	200 MHz		2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C	-40 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	5.12		No		FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS832236AD	e0	No	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit	4	SYNCHRONOUS		225 mA, 260 mA	6.5 ns			Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36			SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM		15 mm	13 mm
Mfr Part No GS832132AGD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		BGA-165	YES		165	6.5 ns		GSI Technology	200 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832132AGD-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	1 MWords	1000000	85 °C	-40 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	5.16	Details	Yes		FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS832132AGD			3A991.B.2.B	Pipeline/Flow Through				PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit	4	SYNCHRONOUS		225 mA, 260 mA	6.5 ns			Flow-Through/Pipelined	1 M x 32	3-STATE	1.4 mm	32		20 Bit	SRAM	36 Mbit	0.04 A	33554432 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM		15 mm	13 mm
Mfr Part No GS8322Z18AD-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		BGA-165	YES		165	5.5 ns		GSI Technology	250 MHz		14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z18AD-250	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes			SMD/SMT	18 Bit	2097152 words	2000000	70 °C			PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA		NOT SPECIFIED	5.13	N	No		FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8322Z18AD	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit		SYNCHRONOUS		215 mA, 255 mA	5.5@Flow-Through/2.5				2 M x 18	3-STATE	1.4 mm	18			SRAM		0.03 A	36	Commercial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM		15 mm	13 mm

Memory (384)