Shop the Latest Memory at Richard Electronics

The category is 'Memory'

Memory (68)

All Manufacturers
Ihs Manufacturer
JESD-30 Code
Manufacturer Part Number
Number of Terminals
Operating Temperature-Max
Package Body Material
Package Code
Package Equivalence Code
Package Shape
Package Style
Part Life Cycle Code
Power Supplies

Power Supplies:
2.5 V

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Number of Terminals	Access Time-Max	Base Product Number	Clock Frequency-Max (fCLK)	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Operating Temperature	Memory Types	Mfr	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting Styles	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Voltage - Supply	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Frequency	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Interface	Max Supply Voltage	Min Supply Voltage	Memory Size	Number of Ports	Nominal Supply Current	Operating Mode	Clock Frequency	Supply Current-Max	Access Time	Memory Format	Memory Interface	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Write Cycle Time - Word, Page	Address Bus Width	Density	Standby Current-Max	Memory Density	Logic IC Type	Max Frequency	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Memory Organization	Length	Width	Radiation Hardening	Lead Free
Mfr Part No MT46V16M16FG-75IT:F	Micron	Datasheet	1227 In Stock	-	Min: 1 Mult: 1					YES			60	0.75 ns		133 MHz		MICRON TECHNOLOGY INC		Micron Technology Inc	MT46V16M16FG-75IT:F									16777216 words	16000000	85 °C	-40 °C		PLASTIC/EPOXY	TBGA	(8 X 14) MM, PLASTIC, FBGA-60	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY, THIN PROFILE	Obsolete	BGA		30	5.68		No			2.5 V				e0		EAR99		Tin/Lead/Silver (Sn/Pb/Ag)			AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS		BOTTOM	BALL	235	1	1 mm	unknown		60	R-PBGA-B60	Not Qualified		2.7 V	2.5 V	INDUSTRIAL	2.3 V					1		SYNCHRONOUS		0.4 mA					16MX16	3-STATE	1.2 mm	16				0.004 A	268435456 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		14 mm	8 mm
Mfr Part No W9425G6EH5I	Winbond Electronics Corporation	Datasheet	-	-	Min: 1 Mult: 1					YES			66	0.7 ns		200 MHz		WINBOND ELECTRONICS CORP		Winbond Electronics Corp	W9425G6EH-5I									16777216 words	16000000	85 °C	-40 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2		NOT SPECIFIED	5.19		Yes			2.5 V						EAR99					AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS		DUAL	GULL WING	NOT SPECIFIED	1	0.65 mm	unknown		66	R-PDSO-G66	Not Qualified		2.7 V	2.5 V	INDUSTRIAL	2.3 V					1		SYNCHRONOUS		0.3 mA					16MX16	3-STATE	1.2 mm	16				0.02 A	268435456 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		22.22 mm	10.16 mm
Mfr Part No W9425G6JH-5	Winbond	Datasheet	4652 In Stock	-	Min: 1 Mult: 1					YES			66	0.7 ns		200 MHz		WINBOND ELECTRONICS CORP		Winbond Electronics Corp	W9425G6JH-5									16777216 words	16000000	70 °C			PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2		NOT SPECIFIED	7.12		Yes			2.5 V						EAR99					AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS		DUAL	GULL WING	NOT SPECIFIED	1	0.65 mm	unknown		66	R-PDSO-G66	Not Qualified		2.7 V	2.5 V	COMMERCIAL	2.3 V					1		SYNCHRONOUS		0.175 mA					16MX16	3-STATE	1.2 mm	16				0.005 A	268435456 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		22.22 mm	10.16 mm
Mfr Part No IS61NVP25636A-200TQI-TR	Integrated Silicon Solution, Inc. (ISSI)	Datasheet	-	-	Min: 1 Mult: 1	12 Weeks				YES			100	3.1 ns		200 MHz		INTEGRATED SILICON SOLUTION INC		Integrated Silicon Solution Inc	IS61NVP25636A-200TQI-TR									262144 words	256000	85 °C	-40 °C		PLASTIC/EPOXY	QFP		QFP100,.63X.87	RECTANGULAR	FLATPACK	Obsolete				5.92		No			2.5 V													SRAMs	CMOS		QUAD	GULL WING			0.635 mm	compliant			R-PQFP-G100	Not Qualified			2.5 V	INDUSTRIAL								SYNCHRONOUS		0.28 mA					256KX36	3-STATE		36				0.05 A	9437184 bit			PARALLEL	COMMON	ZBT SRAM	2.38 V
Mfr Part No K4H561638H-UCCC	Samsung	Datasheet	136 In Stock	-	Min: 1 Mult: 1					YES			66	0.65 ns		200 MHz		SAMSUNG SEMICONDUCTOR INC		Samsung Semiconductor	K4H561638H-UCCC							3		16777216 words	16000000	70 °C			PLASTIC/EPOXY	TSSOP		TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete			NOT SPECIFIED	5.8		Yes			2.5 V				e6	Yes			Tin/Bismuth (Sn97Bi3)					DRAMs	CMOS		DUAL	GULL WING	260		0.635 mm	unknown			R-PDSO-G66	Not Qualified			2.5 V	COMMERCIAL										0.35 mA					16MX16	3-STATE		16				0.004 A	268435456 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8
Mfr Part No MT46V64M8FN-6:D	Micron	Datasheet	-	-	Min: 1 Mult: 1					YES			60	0.7 ns		166 MHz		MICRON TECHNOLOGY INC		Micron Technology Inc	MT46V64M8FN-6:D									67108864 words	64000000	70 °C			PLASTIC/EPOXY	TBGA	10 X 12.50 MM, PLASTIC, FBGA-60	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY, THIN PROFILE	Obsolete	BGA		30	5.63		No			2.5 V				e0		EAR99		Tin/Lead/Silver (Sn/Pb/Ag)			AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS		BOTTOM	BALL	235	1	1 mm	unknown		60	R-PBGA-B60	Not Qualified	2.5 V	2.7 V	2.5 V	COMMERCIAL	2.3 V					1		SYNCHRONOUS		0.405 mA					64MX8	3-STATE	1.2 mm	8				0.005 A	536870912 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		12.5 mm	10 mm
Mfr Part No K4H511638D-UCB3	Samsung	Datasheet	240 In Stock	-	Min: 1 Mult: 1					YES			66	0.7 ns		166 MHz		SAMSUNG SEMICONDUCTOR INC		Samsung Semiconductor	K4H511638D-UCB3							2		33554432 words	32000000	70 °C			PLASTIC/EPOXY	TSSOP		TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete			NOT SPECIFIED	5.82		Yes			2.5 V				e6	Yes			Tin/Bismuth (Sn97Bi3)					DRAMs	CMOS		DUAL	GULL WING	260		0.635 mm	unknown			R-PDSO-G66	Not Qualified			2.5 V	COMMERCIAL										0.38 mA					32MX16	3-STATE		16				0.005 A	536870912 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8
Mfr Part No W9412G6JH-5	Winbond	Datasheet	520 In Stock	-	Min: 1 Mult: 1					YES			66	0.7 ns		200 MHz		WINBOND ELECTRONICS CORP		Winbond Electronics Corp	W9412G6JH-5									8388608 words	8000000	70 °C			PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2		NOT SPECIFIED	7.66		Yes			2.5 V				e3		EAR99		Tin (Sn)			AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS		DUAL	GULL WING	NOT SPECIFIED	1	0.65 mm	unknown		66	R-PDSO-G66	Not Qualified		2.7 V	2.5 V	COMMERCIAL	2.3 V					1		SYNCHRONOUS		0.15 mA					8MX16	3-STATE	1.2 mm	16				0.005 A	134217728 bit				COMMON	DDR DRAM		4096	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		22.22 mm	10.16 mm
Mfr Part No K4H510838D-UCCC	Samsung	Datasheet	408 In Stock	-	Min: 1 Mult: 1		Surface Mount			YES	66		66	0.65 ns		200 MHz		SAMSUNG SEMICONDUCTOR INC		Samsung Semiconductor	K4H510838D-UCCC							3		67108864 words	64000000	70 °C			PLASTIC/EPOXY	TSSOP		TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete			NOT SPECIFIED	5.8	Compliant	Yes			2.5 V				e6	Yes			Tin/Bismuth (Sn97Bi3)	70 °C	0 °C			DRAMs	CMOS		DUAL	GULL WING	260		0.635 mm	unknown	200 MHz		R-PDSO-G66	Not Qualified			2.5 V	COMMERCIAL										0.385 mA	650 ps				64MX8	3-STATE		8		15 b	512 Mb	0.005 A	536870912 bit		400 MHz		COMMON	DDR DRAM		8192	2,4,8	2,4,8							Lead Free
Mfr Part No IS61NVF102418-7.5B3	ISSI	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks				YES			165	7.5 ns		117 MHz		INTEGRATED SILICON SOLUTION INC		Integrated Silicon Solution Inc	IS61NVF102418-7.5B3									1048576 words	1000000	70 °C			PLASTIC/EPOXY	TBGA	TBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, THIN PROFILE	Active	BGA		NOT SPECIFIED	5.48		No			2.5 V				e0	No	3A991.B.2.A		Tin/Lead (Sn/Pb)			FLOW-THROUGH ARCHITECTURE	8542.32.00.41	SRAMs	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant		165	R-PBGA-B165	Not Qualified		2.625 V	2.5 V	COMMERCIAL	2.375 V							SYNCHRONOUS		0.425 mA					1MX18	3-STATE	1.2 mm	18				0.06 A	18			PARALLEL	COMMON	ZBT SRAM	2.38 V							15 mm	13 mm
Mfr Part No K4H561638F-UCB3	Samsung	Datasheet	512 In Stock	-	Min: 1 Mult: 1					YES	66		66			166 MHz		SAMSUNG SEMICONDUCTOR INC		Samsung Semiconductor	K4H561638F-UCB3							3		16777216 words	16000000	70 °C			PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete			NOT SPECIFIED	5.3	Compliant	Yes			2.5 V				e6	Yes			Tin/Bismuth (Sn/Bi)					DRAMs	CMOS		DUAL	GULL WING	260		0.635 mm	unknown	166 MHz		R-PDSO-G66	Not Qualified			2.5 V	COMMERCIAL										0.35 mA					16MX16	3-STATE		16					268435456 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8							Lead Free
Mfr Part No K4H560838H-UCCC	Samsung	Datasheet	800 In Stock	-	Min: 1 Mult: 1					YES	60		66	0.65 ns		200 MHz		SAMSUNG SEMICONDUCTOR INC		Samsung Semiconductor	K4H560838H-UCCC							3		33554432 words	32000000	70 °C			PLASTIC/EPOXY	TSSOP		TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete			NOT SPECIFIED	5.82	Compliant	Yes			2.5 V				e6	Yes			Tin/Bismuth (Sn97Bi3)	70 °C	0 °C			DRAMs	CMOS		DUAL	GULL WING	260		0.635 mm	unknown	200 MHz		R-PDSO-G66	Not Qualified	2.6 V		2.5 V	COMMERCIAL										0.3 mA	550 ps			8 b	32MX8	3-STATE		8		15 b	256 Mb	0.004 A	268435456 bit		400 MHz		COMMON	DDR DRAM		8192	2,4,8	2,4,8						No	Lead Free
Mfr Part No IS61VPS25636A-200TQI	ISSI	Datasheet	-	-	Min: 1 Mult: 1	12 Weeks				YES	100		100	3.1 ns		200 MHz		INTEGRATED SILICON SOLUTION INC		Integrated Silicon Solution Inc	IS61VPS25636A-200TQI									262144 words	256000	85 °C	-40 °C		PLASTIC/EPOXY	LQFP	TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP		NOT SPECIFIED	5.4	Non-Compliant	No			2.5 V				e0	No	3A991.B.2.A		Tin/Lead (Sn/Pb)	85 °C	-40 °C	PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS		QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	200 MHz	100	R-PQFP-G100	Not Qualified		2.625 V	2.5 V	INDUSTRIAL	2.375 V	Parallel	2.625 V	2.375 V	1.1 MB			SYNCHRONOUS		0.275 mA	3.1 ns				256KX36	3-STATE	1.6 mm	36				0.105 A	9437184 bit		200 MHz	PARALLEL	COMMON	CACHE SRAM	2.38 V							20 mm	14 mm
Mfr Part No K4H1G0838M-TCB3	Samsung	Datasheet	16000 In Stock	-	Min: 1 Mult: 1					YES	66		66	0.7 ns		133 MHz		SAMSUNG SEMICONDUCTOR INC		Samsung Semiconductor	K4H1G0838M-TCB3									134217728 words	128000000	70 °C			PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete			NOT SPECIFIED	5.92	Compliant	No			2.5 V				e0	No			Tin/Lead (Sn/Pb)	70 °C	0 °C			DRAMs	CMOS		DUAL	GULL WING	NOT SPECIFIED		0.635 mm	compliant			R-PDSO-G66	Not Qualified	2.5 V		2.5 V	COMMERCIAL										0.43 mA	700 ps			8 b	128MX8	3-STATE		8		16 b	1 Gb	0.006 A	1073741824 bit		333 MHz		COMMON	DDR DRAM		8192	2,4,8	2,4,8						No
Mfr Part No K4H510838C-UCB3	Samsung	Datasheet	3457 In Stock	-	Min: 1 Mult: 1					YES			66	0.7 ns		166 MHz		SAMSUNG SEMICONDUCTOR INC		Samsung Semiconductor	K4H510838C-UCB3							3		67108864 words	64000000	70 °C			PLASTIC/EPOXY	TSSOP		TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete			NOT SPECIFIED	5.82		Yes			2.5 V				e6	Yes			Tin/Bismuth (Sn97Bi3)					DRAMs	CMOS		DUAL	GULL WING	260		0.635 mm	unknown			R-PDSO-G66	Not Qualified			2.5 V	COMMERCIAL															64MX8	3-STATE		8				0.005 A	536870912 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8
Mfr Part No W9412G2IB4	Winbond	Datasheet	-	-	Min: 1 Mult: 1		Surface Mount			YES	144		144	0.6 ns		250 MHz		WINBOND ELECTRONICS CORP		Winbond Electronics Corp	W9412G2IB-4									4194304 words	4000000	70 °C			PLASTIC/EPOXY	LFBGA	LFBGA, BGA144,12X12,32	BGA144,12X12,32	SQUARE	GRID ARRAY, LOW PROFILE, FINE PITCH	Obsolete	BGA		NOT SPECIFIED	8.28	Non-Compliant	Yes			2.6 V						EAR99			70 °C	0 °C	AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	unknown		144	S-PBGA-B144	Not Qualified	2.5 V	2.7 V	2.5 V	COMMERCIAL	2.5 V		2.6 V	2.4 V		1	270 mA	SYNCHRONOUS		0.34 mA	600 ps			32 b	4MX32	3-STATE	1.4 mm	32		14 b	128 Mb	0.03 A	134217728 bit		250 MHz		COMMON	DDR DRAM		4096	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		12 mm	12 mm	No
Mfr Part No K4H510438D-UCB3	Samsung	Datasheet	10 In Stock	-	Min: 1 Mult: 1					YES			66	0.75 ns		133 MHz		SAMSUNG SEMICONDUCTOR INC		Samsung Semiconductor	K4H510438D-UCB3							3		134217728 words	128000000	70 °C			PLASTIC/EPOXY	TSSOP		TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete			NOT SPECIFIED	5.82		Yes			2.5 V				e6	Yes			Tin/Bismuth (Sn/Bi)					DRAMs	CMOS		DUAL	GULL WING	260		0.635 mm	unknown			R-PDSO-G66	Not Qualified			2.5 V	COMMERCIAL										0.325 mA					128MX4	3-STATE		4				0.005 A	536870912 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8
Mfr Part No IS61VPD51236A-250TQ	ISSI	Datasheet	670 In Stock	-	Min: 1 Mult: 1	12 Weeks				YES			100	2.6 ns		250 MHz		INTEGRATED SILICON SOLUTION INC		Integrated Silicon Solution Inc	IS61VPD51236A-250TQ									524288 words	512000	70 °C			PLASTIC/EPOXY	LQFP	TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP		NOT SPECIFIED	5.87		No			2.5 V				e0	No	3A991.B.2.A		Tin/Lead (Sn/Pb)			PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS		QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant		100	R-PQFP-G100	Not Qualified		2.625 V	2.5 V	COMMERCIAL	2.375 V							SYNCHRONOUS		0.45 mA					512KX36	3-STATE	1.6 mm	36				0.06 A	18874368 bit			PARALLEL	COMMON	CACHE SRAM	2.38 V							20 mm	14 mm
Mfr Part No CBTV4020EE/G-T	NXP	Datasheet	-	-	Min: 1 Mult: 1					YES			72					NXP SEMICONDUCTORS		NXP Semiconductors	CBTV4020EE/G-T											85 °C			PLASTIC/EPOXY	FBGA	FBGA, BGA72,10X10,20	BGA72,10X10,20	SQUARE	GRID ARRAY, FINE PITCH	Obsolete				5.84		Yes			2.5 V													Bus Driver/Transceivers			BOTTOM	BALL			0.5 mm	unknown			S-PBGA-B72	Not Qualified			2.5 V	OTHER																								BUS DRIVER
Mfr Part No CY7C1354CV25-166BZCT	Infineon Technologies	Datasheet	-	-	Min: 1 Mult: 1			Surface Mount	FBGA-165	YES		165-FBGA (13x15)	165	3.5 ns	CY7C1354	166 MHz	1000	CYPRESS SEMICONDUCTOR CORP	Parallel		CY7C1354CV25-166BZCT	166 MHz	+ 70 C	Volatile	Infineon Technologies	0 C	Yes	3	SMD/SMT	262144 words	256000	70 °C		Tape & Reel (TR)	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active		Active	20	5.58	N	No	2.625 V	2.375 V	2.5 V	0°C ~ 70°C (TA)	Reel	CY7C1354CV25	e0	No	3A991.B.2.A	Synchronous	Tin/Lead (Sn/Pb)			PIPELINED ARCHITECTURE	8542.32.00.41		SRAM - Synchronous, SDR	2.375V ~ 2.625V	BOTTOM	BALL	235	1	1 mm	compliant			R-PBGA-B165	Not Qualified		2.625 V	2.5 V	COMMERCIAL	2.375 V				9 Mbit	4		SYNCHRONOUS	166 MHz	180 mA	3.5 ns	SRAM	Parallel		256 k x 36	3-STATE	1.4 mm	36	-			0.04 A	9437184 bit			PARALLEL	COMMON	ZBT SRAM	2.38 V						256K x 36	15 mm	13 mm

Memory (68)