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Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Number of Terminals	Access Time-Max	Base Product Number	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Mfr	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Typical Operating Supply Voltage	Usage Level	Voltage Rating (DC)	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Gender	Additional Feature	HTS Code	Subcategory	Technology	Voltage - Supply	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Frequency	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Contact Style	Temperature Grade	Supply Voltage-Min (Vsup)	Voltage	Max Supply Voltage	Min Supply Voltage	Memory Size	Number of Ports	Nominal Supply Current	Operating Mode	Clock Frequency	Supply Current-Max	Access Time	Memory Format	Memory Interface	Architecture	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Write Cycle Time - Word, Page	Address Bus Width	Density	Standby Current-Max	Memory Density	Max Frequency	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Memory Organization	Length	Width	Radiation Hardening	Lead Free
Mfr Part No HYB25D512800CE-6	Infineon	Datasheet	-	-	Min: 1 Mult: 1					YES			66	0.7 ns		166 MHz			QIMONDA AG		Qimonda AG	HYB25D512800CE-6										1				67108864 words	64000000	85 °C			PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2		40	5.63	Non-Compliant	Yes				2.5 V								e3		EAR99		Matte Tin (Sn)				AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS		DUAL	GULL WING	260	1	0.65 mm	unknown		66	R-PDSO-G66	Not Qualified		2.7 V	2.5 V		OTHER	2.3 V					1		SYNCHRONOUS		0.205 mA						64MX8	3-STATE	1.2 mm	8				0.0046 A	536870912 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		22.22 mm	10.16 mm
Mfr Part No MT48V8M32LFB5-75	Micron Technology	Datasheet	-	-	Min: 1 Mult: 1					YES			90	6 ns		133 MHz			MICRON TECHNOLOGY INC		Micron Technology Inc	MT48V8M32LFB5-75														8388608 words	8000000	70 °C			PLASTIC/EPOXY	VFBGA	VFBGA, BGA90,9X15,32	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Obsolete	BGA		30	5.82		Yes				2.5 V								e1	Yes	EAR99		Tin/Silver/Copper (Sn/Ag/Cu)			Female	AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS		BOTTOM	BALL	260	1	0.8 mm	compliant		90	R-PBGA-B90	Not Qualified		2.7 V	2.5 V	Socket	COMMERCIAL	2.3 V					1		SYNCHRONOUS		0.255 mA						8MX32		1 mm	32				0.00001 A	268435456 bit				COMMON	SYNCHRONOUS DRAM		4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES		13 mm	8 mm
Mfr Part No MT46V64M16TG-6T IT:A	Micron Technology	Datasheet	-	-	Min: 1 Mult: 1					YES			66	0.7 ns		167 MHz			MICRON TECHNOLOGY INC		Micron Technology Inc	MT46V64M16TG-6TIT:A														67108864 words	64000000	85 °C	-40 °C		PLASTIC/EPOXY	TSSOP	0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP		30	5.73		No				2.5 V								e0	No	EAR99		Tin/Lead (Sn/Pb)				AUTO/SELF REFRESH	8542.32.00.32	DRAMs	CMOS		DUAL	GULL WING	235	1	0.65 mm	unknown		66	R-PDSO-G66	Not Qualified	2.5 V	2.7 V	2.5 V		INDUSTRIAL	2.3 V					1		SYNCHRONOUS		0.535 mA						64MX16	3-STATE	1.2 mm	16				0.01 A	1073741824 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		22.22 mm	10.16 mm
Mfr Part No HYB25D128800CE-6	Infineon	Datasheet	-	-	Min: 1 Mult: 1					YES			66	0.7 ns		166 MHz			QIMONDA AG		Qimonda AG	HYB25D128800CE-6										1				16777216 words	16000000	70 °C			PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2		40	5.17		Yes				2.5 V								e3		EAR99		Matte Tin (Sn)				AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS		DUAL	GULL WING	260	1	0.65 mm	unknown		66	R-PDSO-G66	Not Qualified		2.7 V	2.5 V		COMMERCIAL	2.3 V					1		SYNCHRONOUS		0.215 mA						16MX8	3-STATE	1.2 mm	8				0.0045 A	134217728 bit				COMMON	DDR DRAM		4096	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		22.22 mm	10.16 mm
Mfr Part No CY7C1480BV25-167BZXC	Infineon Technologies	Datasheet	-	-	Min: 1 Mult: 1	1 Week		Surface Mount	FBGA-165	YES		165-FBGA (15x17)	165	3.4 ns	CY7C1480	167 MHz	SDR	525	CYPRESS SEMICONDUCTOR CORP	Parallel		CY7C1480BV25-167BZXC	167 MHz	167 MHz	2.625 V	+ 70 C	Volatile	Infineon Technologies	2.375 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	70 °C		Tray	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	Active	40	5.51	Details	Yes	FBGA	2.625 V	2.375 V	2.5 V	Synchronous	2.5000 V	Commercial grade		0 to 70 °C	Tray	CY7C1480BV25	e1	Yes	3A991.B.2.A	Synchronous	Tin/Silver/Copper (Sn/Ag/Cu)					8542.32.00.41		SRAM - Synchronous, SDR	2.375V ~ 2.625V	BOTTOM	BALL	260	1	1 mm	compliant		165	R-PBGA-B165	Not Qualified		2.625 V	2.5 V		COMMERCIAL	2.375 V				72 Mbit	4		SYNCHRONOUS	167 MHz	400 mA	3.4 ns	SRAM	Parallel	Pipelined		2 M x 36	3-STATE	1.4 mm	36	-	21 Bit	72 Mb		75497472 bit		Commercial	PARALLEL	COMMON	CACHE SRAM	2.38 V						2M x 36	17 mm	15 mm
Mfr Part No CY7C1480BV25-200BZXC	Infineon Technologies	Datasheet	-	-	Min: 1 Mult: 1			Surface Mount	FBGA-165	YES		165-FBGA (15x17)	165	3 ns	CY7C1480	200 MHz	SDR	525	CYPRESS SEMICONDUCTOR CORP	Parallel		CY7C1480BV25-200BZXC	200 MHz	200 MHz	2.625 V	+ 70 C	Volatile	Infineon Technologies	2.375 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	70 °C		Tray	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	Active	40	1.91	Details	Yes	FBGA	2.625 V	2.375 V	2.5 V	Synchronous	2.5000 V	Commercial grade		0 to 70 °C	Tray	CY7C1480BV25	e1	Yes	3A991.B.2.A	Synchronous	Tin/Silver/Copper (Sn/Ag/Cu)					8542.32.00.41		SRAM - Synchronous, SDR	2.375V ~ 2.625V	BOTTOM	BALL	260	1	1 mm	compliant		165	R-PBGA-B165	Not Qualified		2.625 V	2.5 V		COMMERCIAL	2.375 V				72 Mbit	4		SYNCHRONOUS	200 MHz	450 mA	3 ns	SRAM	Parallel	Pipelined		2 M x 36	3-STATE	1.4 mm	36	-	21 Bit	72 Mb		75497472 bit		Commercial	PARALLEL	COMMON	CACHE SRAM	2.38 V						2M x 36	17 mm	15 mm
Mfr Part No MT46V64M8FN-6IT	Micron	Datasheet	-	-	Min: 1 Mult: 1					YES	60		60	0.7 ns		167 MHz			MICRON TECHNOLOGY INC		Micron Technology Inc	MT46V64M8FN-6IT														67108864 words	64000000	85 °C	-40 °C		PLASTIC/EPOXY	TBGA	10 X 12.50 MM, PLASTIC, FBGA-60	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY, THIN PROFILE	Obsolete	BGA		30	5.67	Compliant	No				2.5 V				2.5 V				e0	No	EAR99		Tin/Lead (Sn/Pb)	85 °C	-40 °C		AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS		BOTTOM	BALL	235	1	1 mm	unknown	167 MHz	60	R-PBGA-B60	Not Qualified	2.5 V	2.7 V	2.5 V		INDUSTRIAL	2.3 V	2.5 V				1		SYNCHRONOUS			600 ps				8 b	64MX8	3-STATE	1.2 mm	8		15 b	512 Mb	0.005 A	536870912 bit	333 MHz			COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		12.5 mm	10 mm	No
Mfr Part No IS61NVP51236-200TQI	ISSI	Datasheet	-	-	Min: 1 Mult: 1	12 Weeks				YES			100	3.1 ns		200 MHz			INTEGRATED SILICON SOLUTION INC		Integrated Silicon Solution Inc	IS61NVP51236-200TQI														524288 words	512000	85 °C	-40 °C		PLASTIC/EPOXY	LQFP	14 X 20 MM, 1.40 MM HEIGHT, TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP		NOT SPECIFIED	5.5		No				2.5 V								e0	No	3A991.B.2.A		Tin/Lead (Sn/Pb)				PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS		QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant		100	R-PQFP-G100	Not Qualified		2.625 V	2.5 V		INDUSTRIAL	2.375 V							SYNCHRONOUS		0.475 mA						512KX36	3-STATE	1.6 mm	36				0.075 A	18			PARALLEL	COMMON	ZBT SRAM	2.38 V							20 mm	14 mm
Mfr Part No IS61NVP25636A-200TQI	ISSI	Datasheet	457 In Stock	-	Min: 1 Mult: 1	12 Weeks				YES			100	3.1 ns		200 MHz			INTEGRATED SILICON SOLUTION INC		Integrated Silicon Solution Inc	IS61NVP25636A-200TQI														262144 words	256000	85 °C	-40 °C		PLASTIC/EPOXY	LQFP	TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP		30	5.35		No				2.5 V								e0	No	3A991.B.2.A		Tin/Lead (Sn/Pb)				PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS		QUAD	GULL WING	240	1	0.65 mm	compliant		100	R-PQFP-G100	Not Qualified		2.625 V	2.5 V		INDUSTRIAL	2.375 V							SYNCHRONOUS		0.28 mA						256KX36	3-STATE	1.6 mm	36				0.05 A	9437184 bit			PARALLEL	COMMON	ZBT SRAM	2.38 V							20 mm	14 mm
Mfr Part No IS61NVP25672-250B1	ISSI	Datasheet	787 In Stock	-	Min: 1 Mult: 1	10 Weeks				YES			209	2.6 ns		250 MHz			INTEGRATED SILICON SOLUTION INC		Integrated Silicon Solution Inc	IS61NVP25672-250B1										3				262144 words	256000	70 °C			PLASTIC/EPOXY	BGA	BGA, BGA209,11X19,40	BGA209,11X19,40	RECTANGULAR	GRID ARRAY	Active	BGA		10	5.57		No				2.5 V								e0	No	3A991.B.2.A		Tin/Lead (Sn/Pb)				PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS		BOTTOM	BALL	240	1	1 mm	compliant		209	R-PBGA-B209	Not Qualified		2.625 V	2.5 V		COMMERCIAL	2.375 V							SYNCHRONOUS		0.6 mA						256KX72	3-STATE	1.95 mm	72				0.06 A	18			PARALLEL	COMMON	ZBT SRAM	2.38 V							22 mm	14 mm
Mfr Part No MT46V32M16BN-6:F	Micron	Datasheet	-	-	Min: 1 Mult: 1					YES			60	0.7 ns		166 MHz			MICRON TECHNOLOGY INC		Micron Technology Inc	MT46V32M16BN-6:F														33554432 words	32000000	70 °C			PLASTIC/EPOXY	TBGA	TBGA, BGA60,9X12,40/32	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY, THIN PROFILE	Obsolete	BGA		30	8.38		Yes				2.5 V								e1		EAR99		Tin/Silver/Copper (Sn/Ag/Cu)				AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS		BOTTOM	BALL	260	1	1 mm	unknown		60	R-PBGA-B60	Not Qualified		2.7 V	2.5 V		COMMERCIAL	2.3 V					1		SYNCHRONOUS		0.405 mA						32MX16	3-STATE	1.2 mm	16				0.005 A	536870912 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		12.5 mm	10 mm
Mfr Part No MT46V64M8TG-6T:D	Micron	Datasheet	-	-	Min: 1 Mult: 1		Surface Mount			YES	66		66	0.7 ns		166 MHz			MICRON TECHNOLOGY INC		Micron Technology Inc	MT46V64M8TG-6T:D														67108864 words	64000000	70 °C			PLASTIC/EPOXY	TSSOP	0.400 INCH, PLASTIC, TSOP-66	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP		30	5.62	Non-Compliant	No				2.5 V						Cut Tape		e0		EAR99		Tin/Lead (Sn/Pb)	70 °C	0 °C		AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS		DUAL	GULL WING	235	1	0.65 mm	unknown	167 MHz	66	R-PDSO-G66	Not Qualified	2.5 V	2.7 V	2.5 V		COMMERCIAL	2.3 V		2.7 V	2.3 V	488.3 MB	1	175 mA	SYNCHRONOUS		0.405 mA	700 ps					64MX8	3-STATE	1.2 mm	8		15 b	512 Mb	0.005 A	536870912 bit	333 MHz			COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		22.22 mm	10.16 mm		Contains Lead
Mfr Part No MT46V16M16CV-6IT:K	Micron	Datasheet	-	-	Min: 1 Mult: 1					YES			60	0.7 ns		167 MHz			MICRON TECHNOLOGY INC		Micron Technology Inc	MT46V16M16CV-6IT:K														16777216 words	16000000	85 °C	-40 °C		PLASTIC/EPOXY	TBGA	(8 X 12.5) MM, PLASTIC, FBGA-60	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY, THIN PROFILE	Obsolete	BGA		30	5.45		No				2.5 V								e0	No	EAR99		Tin/Lead/Silver (Sn/Pb/Ag)				AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS		BOTTOM	BALL	235	1	1 mm	unknown		60	R-PBGA-B60	Not Qualified		2.7 V	2.5 V		INDUSTRIAL	2.3 V					1		SYNCHRONOUS		0.27 mA						16MX16	3-STATE	1.2 mm	16				0.004 A	268435456 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		12.5 mm	8 mm
Mfr Part No MT46V16M16TG-6T:K	Micron	Datasheet	-	-	Min: 1 Mult: 1		Surface Mount			YES	66		66	0.7 ns		167 MHz			MICRON TECHNOLOGY INC		Micron Technology Inc	MT46V16M16TG-6T:K														16777216 words	16000000	70 °C			PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP		30	5.61	Non-Compliant	No				2.6 V								e0	No	EAR99		Tin/Lead (Sn/Pb)	70 °C	0 °C		AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS		DUAL	GULL WING	235	1	0.65 mm	not_compliant		66	R-PDSO-G66	Not Qualified	2.5 V	2.7 V	2.5 V		COMMERCIAL	2.5 V		2.7 V	2.3 V		1	220 mA	SYNCHRONOUS		0.27 mA	700 ps				16 b	16MX16	3-STATE	1.2 mm	16		15 b	256 Mb	0.004 A	268435456 bit	333 MHz			COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		22.22 mm	10.16 mm	No
Mfr Part No MT46V32M8TG-6T:G	Micron	Datasheet	-	-	Min: 1 Mult: 1					YES			66	0.7 ns		133 MHz			MICRON TECHNOLOGY INC		Micron Technology Inc	MT46V32M8TG-6T:G														33554432 words	32000000	70 °C			PLASTIC/EPOXY	TSSOP	0.40 INCH, PLASTIC, TSOP-66	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP		30	8.54		No				2.5 V								e0	No	EAR99		Tin/Lead (Sn/Pb)				AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS		DUAL	GULL WING	235	1	0.65 mm	unknown		66	R-PDSO-G66	Not Qualified	2.5 V	2.7 V	2.5 V		COMMERCIAL	2.3 V					1		SYNCHRONOUS		0.41 mA						32MX8	3-STATE	1.2 mm	8				0.004 A	268435456 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		22.22 mm	10.16 mm
Mfr Part No MT46V16M16CY-6:K	Micron	Datasheet	-	-	Min: 1 Mult: 1		Surface Mount			YES	60		60	0.7 ns		167 MHz			MICRON TECHNOLOGY INC		Micron Technology Inc	MT46V16M16CY-6:K														16777216 words	16000000	70 °C			PLASTIC/EPOXY	TBGA	TBGA, BGA60,9X12,40/32	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY, THIN PROFILE	Obsolete	BGA		30	5.44	Compliant	Yes				2.5 V								e1	Yes	EAR99		Tin/Silver/Copper (Sn/Ag/Cu)	70 °C	0 °C		AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS		BOTTOM	BALL	260	1	1 mm	compliant		60	R-PBGA-B60	Not Qualified	2.5 V	2.7 V	2.5 V		COMMERCIAL	2.3 V		2.7 V	2.3 V		1	270 mA	SYNCHRONOUS		0.27 mA	700 ps				16 b	16MX16	3-STATE	1.2 mm	16		15 b	256 Mb	0.004 A	268435456 bit	333 MHz			COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		12.5 mm	8 mm	No	Lead Free
Mfr Part No MT46V32M16P-6T	Micron	Datasheet	380 In Stock	-	Min: 1 Mult: 1					YES	66		66	0.7 ns		167 MHz			MICRON TECHNOLOGY INC		Micron Technology Inc	MT46V32M16P-6T														33554432 words	32000000	70 °C			PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP		30	8.38	Compliant	Yes				2.5 V				2.5 V				e3	Yes	EAR99		Matte Tin (Sn)	70 °C	0 °C		AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS		DUAL	GULL WING	260	1	0.65 mm	compliant	167 MHz	66	R-PDSO-G66	Not Qualified	2.5 V	2.7 V	2.5 V		COMMERCIAL	2.3 V	2.5 V				1		SYNCHRONOUS			700 ps				16 b	32MX16	3-STATE	1.2 mm	16		15 b	512 Mb	0.005 A	536870912 bit	333 MHz			COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		22.22 mm	10.16 mm	No	Lead Free
Mfr Part No MT46V16M16FG-75:C	Micron	Datasheet	-	-	Min: 1 Mult: 1		Surface Mount			YES	60		60	0.75 ns		133 MHz			MICRON TECHNOLOGY INC		Micron Technology Inc	MT46V16M16FG-75:C														16777216 words	16000000	70 °C			PLASTIC/EPOXY	TBGA	8 X 14 MM, PLASTIC, FBGA-60	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY, THIN PROFILE	Obsolete	BGA		30	5.68	Compliant	No				2.5 V								e0		EAR99		Tin/Lead/Silver (Sn/Pb/Ag)	70 °C	0 °C		AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS		BOTTOM	BALL	235	1	1 mm	unknown		60	R-PBGA-B60	Not Qualified	2.5 V	2.7 V	2.5 V		COMMERCIAL	2.3 V		2.7 V	2.3 V		1	185 mA	SYNCHRONOUS			750 ps				16 b	16MX16	3-STATE	1.2 mm	16		15 b	256 Mb		268435456 bit	266 MHz			COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		14 mm	8 mm	No
Mfr Part No W9412G2IB-5	Winbond	Datasheet	-	-	Min: 1 Mult: 1					YES			144	0.7 ns		200 MHz			WINBOND ELECTRONICS CORP		Winbond Electronics Corp	W9412G2IB-5														4194304 words	4000000	70 °C			PLASTIC/EPOXY	LFBGA	LFBGA, BGA144,12X12,32	BGA144,12X12,32	SQUARE	GRID ARRAY, LOW PROFILE, FINE PITCH	Obsolete	BGA		NOT SPECIFIED	5.72		Yes				2.5 V										EAR99						AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	unknown		144	S-PBGA-B144	Not Qualified		2.7 V	2.5 V		COMMERCIAL	2.3 V					1		SYNCHRONOUS		0.32 mA						4MX32	3-STATE	1.4 mm	32				0.03 A	134217728 bit				COMMON	DDR DRAM		4096	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		12 mm	12 mm
Mfr Part No K4H510438C-UCB0	Samsung	Datasheet	-	-	Min: 1 Mult: 1					YES			66	0.75 ns		133 MHz			SAMSUNG SEMICONDUCTOR INC		Samsung Semiconductor	K4H510438C-UCB0										3				134217728 words	128000000	70 °C			PLASTIC/EPOXY	TSSOP		TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete			NOT SPECIFIED	5.84		Yes				2.5 V								e6	Yes			Tin/Bismuth (Sn97Bi3)						DRAMs	CMOS		DUAL	GULL WING	260		0.635 mm	unknown			R-PDSO-G66	Not Qualified			2.5 V		COMMERCIAL										0.325 mA						128MX4	3-STATE		4				0.005 A	536870912 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8

Memory (68)