The category is 'Memory'
Memory (68)
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2.5 V
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Packaging | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | Lead Free |
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![]() | Mfr Part No IS61VPS102418A-250TQI | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | YES | 100 | 2.6 ns | 250 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS61VPS102418A-250TQI | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | 30 | 5.62 | No | 2.5 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 240 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.625 V | 2.5 V | INDUSTRIAL | 2.375 V | SYNCHRONOUS | 0.5 mA | 1MX18 | 3-STATE | 1.6 mm | 18 | 0.125 A | 18874368 bit | PARALLEL | COMMON | CACHE SRAM | 2.38 V | 20 mm | 14 mm | |||||||||||||||||||||||||
![]() | Mfr Part No MT46V16M16CY-6IT:K | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.7 ns | 167 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V16M16CY-6IT:K | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | 30 | 8.16 | Yes | 2.5 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | 2.5 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.27 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 8 mm | ||||||||||||||||||||||
![]() | Mfr Part No MT46V16M16CV-6:K | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.7 ns | 167 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V16M16CV-6:K | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TBGA | (8 X 12.5) MM, PLASTIC, FBGA-60 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | 30 | 5.44 | No | 2.5 V | e0 | No | EAR99 | Tin/Lead/Silver (Sn/Pb/Ag) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 235 | 1 | 1 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | 2.5 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.27 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 8 mm | |||||||||||||||||||||||
![]() | Mfr Part No IS61VPS102418A-200TQ | ISSI | Datasheet | 435 | - | Min: 1 Mult: 1 | 12 Weeks | YES | 100 | 3.1 ns | 200 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS61VPS102418A-200TQ | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.8 | No | 2.5 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.625 V | 2.5 V | COMMERCIAL | 2.375 V | SYNCHRONOUS | 0.425 mA | 1MX18 | 3-STATE | 1.6 mm | 18 | 0.11 A | 18874368 bit | PARALLEL | COMMON | CACHE SRAM | 2.38 V | 20 mm | 14 mm | ||||||||||||||||||||||||||
![]() | Mfr Part No IS61NVP102418-250TQI | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | YES | 100 | 2.6 ns | 250 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS61NVP102418-250TQI | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | 14 X 20 MM, 1.40 MM HEIGHT, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.8 | No | 2.5 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.625 V | 2.5 V | INDUSTRIAL | 2.375 V | SYNCHRONOUS | 0.5 mA | 1MX18 | 3-STATE | 1.6 mm | 18 | 0.075 A | 18874368 bit | PARALLEL | COMMON | ZBT SRAM | 2.38 V | 20 mm | 14 mm | |||||||||||||||||||||||||
![]() | Mfr Part No IS61VPS51236A-250TQI | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | YES | 100 | 2.6 ns | 250 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS61VPS51236A-250TQI | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | 30 | 5.79 | No | 2.5 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 240 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.625 V | 2.5 V | INDUSTRIAL | 2.375 V | SYNCHRONOUS | 0.5 mA | 512KX36 | 3-STATE | 1.6 mm | 36 | 0.125 A | 18874368 bit | PARALLEL | COMMON | CACHE SRAM | 20 mm | 14 mm | ||||||||||||||||||||||||||
![]() | Mfr Part No IS61VF51236A-6.5TQI | ISSI | Datasheet | 725 | - | Min: 1 Mult: 1 | 12 Weeks | YES | 100 | 6.5 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS61VF51236A-6.5TQI | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | QFF | 14 X 20 MM, 1.40 MM HEIGHT, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK | Obsolete | QFP | 30 | 5.86 | No | 2.5 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE, FLOW-THROUGH | 8542.32.00.41 | SRAMs | CMOS | QUAD | FLAT | 240 | 1 | 0.65 mm | compliant | 100 | R-PQFP-F100 | Not Qualified | 2.625 V | 2.5 V | INDUSTRIAL | 2.375 V | SYNCHRONOUS | 0.275 mA | 512KX36 | 3-STATE | 1.6 mm | 36 | 0.075 A | 18874368 bit | PARALLEL | COMMON | CACHE SRAM | 2.38 V | 20 mm | 14 mm | |||||||||||||||||||||||||
![]() | Mfr Part No IS61VF102418A-6.5TQI | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | YES | 100 | 6.5 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS61VF102418A-6.5TQI | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.53 | No | 2.5 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn/Pb) | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.625 V | 2.5 V | INDUSTRIAL | 2.375 V | SYNCHRONOUS | 0.275 mA | 1MX18 | 3-STATE | 1.6 mm | 18 | 0.075 A | 18874368 bit | PARALLEL | COMMON | CACHE SRAM | 2.38 V | 20 mm | 14 mm | |||||||||||||||||||||||||
![]() | Mfr Part No IS61NVF102418-6.5TQ | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | YES | 100 | 6.5 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS61NVF102418-6.5TQ | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.8 | No | 2.5 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn/Pb) | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.625 V | 2.5 V | COMMERCIAL | 2.375 V | SYNCHRONOUS | 0.45 mA | 1MX18 | 3-STATE | 1.6 mm | 18 | 0.06 A | 18874368 bit | PARALLEL | COMMON | ZBT SRAM | 2.38 V | 20 mm | 14 mm | ||||||||||||||||||||||||||
![]() | Mfr Part No IS61NVP102418-200TQI | ISSI | Datasheet | 404 | - | Min: 1 Mult: 1 | 12 Weeks | YES | 100 | 3.1 ns | 200 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS61NVP102418-200TQI | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | 14 X 20 MM, 1.40 MM HEIGHT, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.49 | No | 2.5 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.625 V | 2.5 V | INDUSTRIAL | 2.375 V | SYNCHRONOUS | 0.475 mA | 1MX18 | 3-STATE | 1.6 mm | 18 | 0.075 A | 18874368 bit | PARALLEL | COMMON | ZBT SRAM | 2.38 V | 20 mm | 14 mm | |||||||||||||||||||||||||
![]() | Mfr Part No IS61VPD51236A-250TQI | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | YES | 100 | 2.6 ns | 250 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS61VPD51236A-250TQI | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | 30 | 5.87 | No | 2.5 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 240 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.625 V | 2.5 V | INDUSTRIAL | 2.375 V | SYNCHRONOUS | 0.5 mA | 512KX36 | 3-STATE | 1.6 mm | 36 | 0.075 A | 18874368 bit | PARALLEL | COMMON | CACHE SRAM | 2.38 V | 20 mm | 14 mm | |||||||||||||||||||||||||
![]() | Mfr Part No IS61NVP51236-250TQI | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | YES | 100 | 2.6 ns | 250 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS61NVP51236-250TQI | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | 14 X 20 MM, 1.40 MM HEIGHT, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.82 | No | 2.5 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.625 V | 2.5 V | INDUSTRIAL | 2.375 V | SYNCHRONOUS | 0.5 mA | 512KX36 | 3-STATE | 1.6 mm | 36 | 0.075 A | 18874368 bit | PARALLEL | COMMON | ZBT SRAM | 2.38 V | 20 mm | 14 mm | |||||||||||||||||||||||||
![]() | Mfr Part No IS61NVP51236-250TQ | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | YES | 100 | 2.6 ns | 250 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS61NVP51236-250TQ | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | LQFP | 14 X 20 MM, 1.40 MM HEIGHT, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.82 | No | 2.5 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.625 V | 2.5 V | COMMERCIAL | 2.375 V | SYNCHRONOUS | 0.45 mA | 512KX36 | 3-STATE | 1.6 mm | 36 | 0.06 A | 18874368 bit | PARALLEL | COMMON | ZBT SRAM | 2.38 V | 20 mm | 14 mm | ||||||||||||||||||||||||||
![]() | Mfr Part No IS61VF102418A-6.5TQ | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | YES | 100 | 6.5 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS61VF102418A-6.5TQ | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | QFF | 14 X 20 MM, 1.40 MM HEIGHT, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK | Obsolete | QFP | NOT SPECIFIED | 5.53 | No | 2.5 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE, FLOW-THROUGH | 8542.32.00.41 | SRAMs | CMOS | QUAD | FLAT | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-F100 | Not Qualified | 2.625 V | 2.5 V | COMMERCIAL | 2.375 V | SYNCHRONOUS | 0.25 mA | 1MX18 | 3-STATE | 1.6 mm | 18 | 0.06 A | 18874368 bit | PARALLEL | COMMON | CACHE SRAM | 2.38 V | 20 mm | 14 mm | ||||||||||||||||||||||||||
![]() | Mfr Part No MT46V64M8FN-6:F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.7 ns | 166 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V64M8FN-6:F | 67108864 words | 64000000 | 70 °C | PLASTIC/EPOXY | TBGA | 10 X 12.50 MM, PLASTIC, FBGA-60 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | 30 | 5.62 | No | 2.5 V | e0 | EAR99 | Tin/Lead/Silver (Sn/Pb/Ag) | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | 235 | 1 | 1 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | 2.5 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.405 mA | 64MX8 | 3-STATE | 1.2 mm | 8 | 0.005 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 10 mm | ||||||||||||||||||||||||
![]() | Mfr Part No MT46V16M16P-6T:K | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 167 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V16M16P-6T:K | 3 | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 5.58 | Yes | 2.6 V | e3 | Yes | EAR99 | Matte Tin (Sn) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.65 mm | compliant | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | 2.5 V | COMMERCIAL | 2.5 V | 1 | SYNCHRONOUS | 0.27 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||
![]() | Mfr Part No MT46V16M16TG-75:C | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.75 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V16M16TG-75:C | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP-66 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | 30 | 5.25 | No | 2.5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.65 mm | unknown | 66 | R-PDSO-G66 | Not Qualified | 2.5 V | 2.7 V | 2.5 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 16MX16 | 3-STATE | 1.2 mm | 16 | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||
![]() | Mfr Part No K4H1G0438A-UCB0 | Samsung | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.75 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4H1G0438A-UCB0 | 3 | 268435456 words | 256000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | NOT SPECIFIED | 5.84 | Non-Compliant | Yes | 2.5 V | e6 | Yes | Tin/Bismuth (Sn97Bi3) | DRAMs | CMOS | DUAL | GULL WING | 260 | 0.635 mm | compliant | 133 MHz | R-PDSO-G66 | Not Qualified | 2.5 V | COMMERCIAL | 0.23 mA | 256MX4 | 3-STATE | 4 | 0.015 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | Lead Free | ||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46V16M16TG-6TIT:K | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 167 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V16M16TG-6TIT:K | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | 0.40 INCH, PLASTIC, TSOP-66 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 5.64 | No | 2.6 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.65 mm | unknown | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | 2.5 V | INDUSTRIAL | 2.5 V | 1 | SYNCHRONOUS | 0.27 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||
![]() | Mfr Part No MT46V64M8TG-6TIT:D | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 66 | 66 | 0.7 ns | 166 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V64M8TG-6TIT:D | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | 0.400 INCH, PLASTIC, TSOP-66 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 5.46 | Non-Compliant | No | 2.5 V | Cut Tape | e0 | EAR99 | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.65 mm | unknown | 167 MHz | 66 | R-PDSO-G66 | Not Qualified | 2.5 V | 2.7 V | 2.5 V | INDUSTRIAL | 2.3 V | 2.7 V | 2.3 V | 488.3 MB | 1 | 175 mA | SYNCHRONOUS | 0.405 mA | 700 ps | 64MX8 | 3-STATE | 1.2 mm | 8 | 15 b | 512 Mb | 0.005 A | 536870912 bit | 333 MHz | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | Contains Lead |
IS61VPS102418A-250TQI
ISSI
Package:Memory
Price: please inquire
MT46V16M16CY-6IT:K
Micron
Package:Memory
Price: please inquire
MT46V16M16CV-6:K
Micron
Package:Memory
Price: please inquire
IS61VPS102418A-200TQ
ISSI
Package:Memory
Price: please inquire
IS61NVP102418-250TQI
ISSI
Package:Memory
Price: please inquire
IS61VPS51236A-250TQI
ISSI
Package:Memory
Price: please inquire
IS61VF51236A-6.5TQI
ISSI
Package:Memory
Price: please inquire
IS61VF102418A-6.5TQI
ISSI
Package:Memory
Price: please inquire
IS61NVF102418-6.5TQ
ISSI
Package:Memory
Price: please inquire
IS61NVP102418-200TQI
ISSI
Package:Memory
Price: please inquire
IS61VPD51236A-250TQI
ISSI
Package:Memory
Price: please inquire
IS61NVP51236-250TQI
ISSI
Package:Memory
Price: please inquire
IS61NVP51236-250TQ
ISSI
Package:Memory
Price: please inquire
IS61VF102418A-6.5TQ
ISSI
Package:Memory
Price: please inquire
MT46V64M8FN-6:F
Micron
Package:Memory
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MT46V16M16P-6T:K
Micron
Package:Memory
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MT46V16M16TG-75:C
Micron
Package:Memory
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K4H1G0438A-UCB0
Samsung
Package:Memory
Price: please inquire
MT46V16M16TG-6TIT:K
Micron
Package:Memory
Price: please inquire
MT46V64M8TG-6TIT:D
Micron
Package:Memory
Price: please inquire
