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The category is 'Memory'

Memory (68)

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Power Supplies:
2.5 V

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Mount	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Frequency	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Max Supply Voltage	Min Supply Voltage	Number of Ports	Nominal Supply Current	Operating Mode	Supply Current-Max	Access Time	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Max Frequency	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width	Radiation Hardening	Lead Free
	Mfr Part No MT46V32M8TG-6T	Micron	Datasheet	-	-	Min: 1 Mult: 1		Surface Mount	YES	66	66	0.7 ns	133 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V32M8TG-6T		33554432 words	32000000	70 °C		PLASTIC/EPOXY	TSSOP	0.400 INCH, PLASTIC, TSOP-66	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP	30	5.61	Compliant	No	2.5 V	e0	No	EAR99	Tin/Lead (Sn/Pb)	70 °C	0 °C	AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	DUAL	GULL WING	235	1	0.65 mm	unknown		66	R-PDSO-G66	Not Qualified	2.5 V	2.7 V	2.5 V	COMMERCIAL	2.3 V	2.7 V	2.3 V	1	175 mA	SYNCHRONOUS	0.41 mA	700 ps	8 b	32MX8	3-STATE	1.2 mm	8	15 b	256 Mb	0.004 A	268435456 bit	333 MHz		COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm	No
	Mfr Part No MT46V64M4TG-75:C	Micron	Datasheet	-	-	Min: 1 Mult: 1			YES		66	0.75 ns	133 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V64M4TG-75:C		67108864 words	64000000	70 °C		PLASTIC/EPOXY	TSOP2	0.400 INCH, PLASTIC, TSOP-66	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Active	TSOP	30	5.47		No	2.5 V	e0	No	EAR99	Tin/Lead (Sn/Pb)			AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	DUAL	GULL WING	235	1	0.65 mm	unknown		66	R-PDSO-G66	Not Qualified		2.7 V	2.5 V	COMMERCIAL	2.3 V			1		SYNCHRONOUS				64MX4	3-STATE	1.2 mm	4				268435456 bit			COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
	Mfr Part No K4H1G0838A-UCB3	Samsung	Datasheet	-	-	Min: 1 Mult: 1			YES		66	0.7 ns	166 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H1G0838A-UCB3	3	134217728 words	128000000	70 °C		PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete		NOT SPECIFIED	5.84	Non-Compliant	Yes	2.5 V	e6	Yes		Tin/Bismuth (Sn97Bi3)					DRAMs	CMOS	DUAL	GULL WING	260		0.635 mm	compliant	166 MHz		R-PDSO-G66	Not Qualified			2.5 V	COMMERCIAL							0.24 mA			128MX8	3-STATE		8			0.015 A	1073741824 bit			COMMON	DDR DRAM		8192	2,4,8	2,4,8						Lead Free
	Mfr Part No MT46V32M16BN-6LIT:F	Micron	Datasheet	-	-	Min: 1 Mult: 1			YES		60	0.7 ns	166 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V32M16BN-6LIT:F		33554432 words	32000000	85 °C	-40 °C	PLASTIC/EPOXY	TBGA	TBGA, BGA60,9X12,40/32	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY, THIN PROFILE	Obsolete	BGA	30	5.47	Compliant	Yes	2.5 V	e1	Yes	EAR99	Tin/Silver/Copper (Sn/Ag/Cu)			AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS	BOTTOM	BALL	260	1	1 mm	compliant		60	R-PBGA-B60	Not Qualified	2.5 V	2.7 V	2.5 V	INDUSTRIAL	2.3 V			1		SYNCHRONOUS	0.405 mA			32MX16	3-STATE	1.2 mm	16			0.005 A	536870912 bit			COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES	12.5 mm	10 mm		Lead Free
	Mfr Part No K4H1G0838M-UCB3	Samsung	Datasheet	-	-	Min: 1 Mult: 1			YES		66	0.7 ns	166 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H1G0838M-UCB3	1	134217728 words	128000000	70 °C		PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete		NOT SPECIFIED	5.84	Compliant	Yes	2.5 V	e3	Yes		MATTE TIN	70 °C	0 °C			DRAMs	CMOS	DUAL	GULL WING	225		0.635 mm	compliant	166 MHz		R-PDSO-G66	Not Qualified	2.5 V		2.5 V	COMMERCIAL							0.43 mA	600 ps	8 b	128MX8	3-STATE		8	16 b	1 Gb	0.006 A	1073741824 bit	333 MHz		COMMON	DDR DRAM		8192	2,4,8	2,4,8					No	Lead Free
	Mfr Part No K4H511638B-UCB0	Samsung	Datasheet	-	-	Min: 1 Mult: 1			YES		66	0.75 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H511638B-UCB0	3	33554432 words	32000000	70 °C		PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete		NOT SPECIFIED	5.84		Yes	2.5 V		Yes							DRAMs	CMOS	DUAL	GULL WING	260		0.635 mm	compliant			R-PDSO-G66	Not Qualified			2.5 V	COMMERCIAL							0.36 mA			32MX16	3-STATE		16			0.005 A	536870912 bit			COMMON	DDR DRAM		8192	2,4,8	2,4,8
	Mfr Part No CY7C1370CV25-167BZI	Cypress Semiconductor	Datasheet	-	-	Min: 1 Mult: 1			YES	165	165	3.4 ns	167 MHz	CYPRESS SEMICONDUCTOR CORP	Cypress Semiconductor	CY7C1370CV25-167BZI	3	524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	TBGA	TBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, THIN PROFILE	Obsolete	BGA	NOT SPECIFIED	5.78	Compliant	No	2.5 V	e0		3A991.B.2.A	Tin/Lead (Sn/Pb)	85 °C	-40 °C	PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	220	1	1 mm	not_compliant		165	R-PBGA-B165	Not Qualified	2.5 V	2.625 V	2.5 V	INDUSTRIAL	2.375 V			1		SYNCHRONOUS	0.275 mA			512KX36	3-STATE	1.2 mm	36	19 b	18 Mb	0.06 A	18874368 bit		PARALLEL	COMMON	ZBT SRAM	2.38 V						15 mm	13 mm
	Mfr Part No K4H511638C-UCB3	Samsung	Datasheet	-	-	Min: 1 Mult: 1			YES	66	66	0.7 ns	166 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H511638C-UCB3	3	33554432 words	32000000	70 °C		PLASTIC/EPOXY	TSSOP		TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete		NOT SPECIFIED	5.8	Compliant	Yes	2.5 V	e6	Yes		Tin/Bismuth (Sn97Bi3)					DRAMs	CMOS	DUAL	GULL WING	260		0.635 mm	unknown	166 MHz		R-PDSO-G66	Not Qualified			2.5 V	COMMERCIAL							0.38 mA			32MX16	3-STATE		16			0.005 A	536870912 bit			COMMON	DDR DRAM		8192	2,4,8	2,4,8						Lead Free

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