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Memory (30)

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Power Supplies:
2.6 V

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Mfr	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supply Voltage-Nom (Vsup)	Wavelength-dominant	Series	Size / Dimension	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Color	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Frequency	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Configuration	Max Supply Voltage	Min Supply Voltage	Number of Ports	Nominal Supply Current	Operating Mode	Voltage - Forward (Vf) (Typ)	Viewing Angle	Supply Current-Max	Current - Test	Access Time	Lens Style	Data Bus Width	Organization	Output Characteristics	Lens Size	Seated Height-Max	Memory Width	Address Bus Width	Density	Millicandela Rating	Standby Current-Max	Lens Transparency	Wavelength - Peak	Memory Density	Lens Color	Max Frequency	I/O Type	Memory IC Type	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Features	Self Refresh	Length	Width	Height (Max)	Radiation Hardening	Lead Free
Mfr Part No MT46V16M16FG-5B:F	Micron	Datasheet	-	-	Min: 1 Mult: 1				YES			60	0.7 ns	200 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V16M16FG-5B:F			16777216 words	16000000	70 °C			PLASTIC/EPOXY	TBGA	(8 X 14) MM, PLASTIC, FBGA-60	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY, THIN PROFILE	Obsolete	BGA		30	5.68		No	2.6 V				e0		EAR99	Tin/Lead/Silver (Sn/Pb/Ag)				AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	BOTTOM	BALL	235	1	1 mm	unknown		60	R-PBGA-B60	Not Qualified		2.7 V	2.6 V	COMMERCIAL	2.5 V				1		SYNCHRONOUS			0.51 mA					16MX16	3-STATE		1.2 mm	16				0.004 A			268435456 bit			COMMON	DDR DRAM	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST		YES	14 mm	8 mm
Mfr Part No K4H511638D-UCCC	Samsung	Datasheet	21 In Stock	-	Min: 1 Mult: 1				YES			66	0.65 ns	200 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H511638D-UCCC		3	33554432 words	32000000	70 °C			PLASTIC/EPOXY	TSSOP		TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete			NOT SPECIFIED	5.81		Yes	2.6 V				e6	Yes		Tin/Bismuth (Sn97Bi3)						DRAMs	CMOS	DUAL	GULL WING	260		0.635 mm	unknown			R-PDSO-G66	Not Qualified			2.6 V	COMMERCIAL										0.4 mA					32MX16	3-STATE			16				0.005 A			536870912 bit			COMMON	DDR DRAM	8192	2,4,8	2,4,8
Mfr Part No W9425G6JH-4	Winbond	Datasheet	4147 In Stock	-	Min: 1 Mult: 1				YES			66	0.7 ns	250 MHz	WINBOND ELECTRONICS CORP	Winbond Electronics Corp	W9425G6JH-4			16777216 words	16000000	70 °C			PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2		NOT SPECIFIED	5.18		Yes	2.5 V						EAR99					AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	DUAL	GULL WING	NOT SPECIFIED	1	0.65 mm	unknown		66	R-PDSO-G66	Not Qualified		2.7 V	2.6 V	COMMERCIAL	2.4 V				1		SYNCHRONOUS			0.21 mA					16MX16	3-STATE		1.2 mm	16				0.005 A			268435456 bit			COMMON	DDR DRAM	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST		YES	22.22 mm	10.16 mm
Mfr Part No MT46V16M16P-5BIT:F	Micron	Datasheet	439 In Stock	-	Min: 1 Mult: 1				YES			66	0.7 ns	200 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V16M16P-5BIT:F			16777216 words	16000000	85 °C	-40 °C		PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP		30	8.42		Yes	2.6 V				e3		EAR99	Matte Tin (Sn)				AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	DUAL	GULL WING	260	1	0.65 mm	unknown		66	R-PDSO-G66	Not Qualified		2.7 V	2.6 V	INDUSTRIAL	2.5 V				1		SYNCHRONOUS			0.51 mA					16MX16	3-STATE		1.2 mm	16				0.004 A			268435456 bit			COMMON	DDR DRAM	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST		YES	22.22 mm	10.16 mm
Mfr Part No K4H510838C-UCCC	Samsung	Datasheet	3936 In Stock	-	Min: 1 Mult: 1				YES			66	0.65 ns	200 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H510838C-UCCC		3	67108864 words	64000000	70 °C			PLASTIC/EPOXY	TSSOP		TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete			NOT SPECIFIED	5.8		Yes	2.6 V				e6	Yes		Tin/Bismuth (Sn97Bi3)						DRAMs	CMOS	DUAL	GULL WING	260		0.635 mm	unknown			R-PDSO-G66	Not Qualified			2.6 V	COMMERCIAL															64MX8	3-STATE			8				0.005 A			536870912 bit			COMMON	DDR DRAM	8192	2,4,8	2,4,8
Mfr Part No MT46V16M16P-5B:F	Micron	Datasheet	-	-	Min: 1 Mult: 1				YES			66	0.7 ns	200 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V16M16P-5B:F			16777216 words	16000000	70 °C			PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP		30	8.35		Yes	2.6 V				e3	Yes	EAR99	Matte Tin (Sn)				AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	DUAL	GULL WING	260	1	0.65 mm	unknown		66	R-PDSO-G66	Not Qualified		2.7 V	2.6 V	COMMERCIAL	2.5 V				1		SYNCHRONOUS			0.51 mA					16MX16	3-STATE		1.2 mm	16				0.004 A			268435456 bit			COMMON	DDR DRAM	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST		YES	22.22 mm	10.16 mm
Mfr Part No MT46V16M16TG-6T:C	Micron	Datasheet	-	-	Min: 1 Mult: 1	Surface Mount			YES	66		66	0.7 ns	167 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V16M16TG-6T:C			16777216 words	16000000	70 °C			PLASTIC/EPOXY	TSOP2	0.400 INCH, PLASTIC, TSOP-66	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP		30	8.57	Compliant	No	2.5 V				e0	No	EAR99	Tin/Lead (Sn/Pb)	70 °C	0 °C		AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	DUAL	GULL WING	235	1	0.65 mm	unknown		66	R-PDSO-G66	Not Qualified	2.5 V	2.7 V	2.6 V	COMMERCIAL	2.3 V		2.7 V	2.3 V	1	410 mA	SYNCHRONOUS					700 ps		16 b	16MX16	3-STATE		1.2 mm	16	15 b	256 Mb					268435456 bit		333 MHz	COMMON	DDR DRAM	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST		YES	22.22 mm	10.16 mm
Mfr Part No MT46V16M16TG-5B IT K	Micron Technology	Datasheet	-	-	Min: 1 Mult: 1	Surface Mount	Surface Mount	2-SMD, Flat Lead	YES	66	SMD	66	0.7 ns	200 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V16M16TG-5BIT:K	OSRAM Opto (ams OSRAM)		16777216 words	16000000	85 °C	-40 °C	Tape & Reel (TR)	PLASTIC/EPOXY	TSSOP	0.40 INCH, PLASTIC, TSOP-66	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP	Obsolete	30	5.68	Compliant	No	2.6 V	-	PointLED®	3.40mm L x 1.90mm W	e0	No	EAR99	Tin/Lead (Sn/Pb)	85 °C	-40 °C	-	AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	DUAL	GULL WING	235	1	0.65 mm	unknown		66	R-PDSO-G66	Not Qualified	2.5 V	2.7 V	2.6 V	INDUSTRIAL	2.5 V	-	2.7 V	2.5 V	1	290 mA	SYNCHRONOUS	-	-	0.29 mA	-	700 ps	-	16 b	16MX16	3-STATE	-	1.2 mm	16	15 b	256 Mb	-	0.004 A	-	-	268435456 bit	-	400 MHz	COMMON	DDR DRAM	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	-	YES	22.22 mm	10.16 mm	0.87mm	No
Mfr Part No K4H560838H-ZCCC	Samsung	Datasheet	-	-	Min: 1 Mult: 1				YES			60		200 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H560838H-ZCCC		3	33554432 words	32000000	70 °C			PLASTIC/EPOXY	BGA	BGA, BGA60,9X12,40/32	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY	Obsolete			NOT SPECIFIED	5.84		Yes	2.6 V				e1	Yes		Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)						DRAMs	CMOS	BOTTOM	BALL	260		0.8 mm	unknown			R-PBGA-B60	Not Qualified			2.6 V	COMMERCIAL										0.3 mA					32MX8	3-STATE			8				0.004 A			268435456 bit			COMMON	DDR DRAM	8192	2,4,8	2,4,8
Mfr Part No MT46V16M16P5BITK	Micron Technology	Datasheet	4 In Stock	-	Min: 1 Mult: 1	Surface Mount			YES	66		66	0.7 ns	200 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V16M16P-5BIT:K			16777216 words	16000000	85 °C	-40 °C		PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP		30	5.6	Compliant	Yes	2.6 V				e3	Yes	EAR99	Matte Tin (Sn)	85 °C	-40 °C		AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	DUAL	GULL WING	260	1	0.65 mm	compliant		66	R-PDSO-G66	Not Qualified	2.5 V	2.7 V	2.6 V	INDUSTRIAL	2.5 V		2.7 V	2.5 V	1	290 mA	SYNCHRONOUS			0.29 mA		700 ps		16 b	16MX16	3-STATE		1.2 mm	16	15 b	256 Mb		0.004 A			268435456 bit		400 MHz	COMMON	DDR DRAM	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST		YES	22.22 mm	10.16 mm		No	Lead Free
Mfr Part No K4H561638F-UCCC	Samsung	Datasheet	1734 In Stock	-	Min: 1 Mult: 1				YES			66		200 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H561638F-UCCC		3	16777216 words	16000000	70 °C			PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete			NOT SPECIFIED	5.81		Yes	2.6 V					Yes								DRAMs	CMOS	DUAL	GULL WING	260		0.635 mm	compliant			R-PDSO-G66	Not Qualified			2.6 V	COMMERCIAL										0.38 mA					16MX16	3-STATE			16							268435456 bit			COMMON	DDR DRAM	8192	2,4,8	2,4,8
Mfr Part No MT46V16M16P-5B:K	Micron	Datasheet	12800 In Stock	-	Min: 1 Mult: 1				YES			66	0.7 ns	200 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V16M16P-5B:K		3	16777216 words	16000000	70 °C			PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP		30	5.58		Yes	2.6 V				e3	Yes	EAR99	Matte Tin (Sn)				AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	DUAL	GULL WING	260	1	0.65 mm	compliant		66	R-PDSO-G66	Not Qualified		2.7 V	2.6 V	COMMERCIAL	2.5 V				1		SYNCHRONOUS			0.29 mA					16MX16	3-STATE		1.2 mm	16				0.004 A			268435456 bit			COMMON	DDR DRAM	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST		YES	22.22 mm	10.16 mm
Mfr Part No MT46V32M8TG-5B:K	Micron	Datasheet	14 In Stock	-	Min: 1 Mult: 1				YES			66	0.7 ns	200 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V32M8TG-5B:K			33554432 words	32000000	70 °C			PLASTIC/EPOXY	TSSOP	0.40 INCH, PLASTIC, TSOP-66	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP		30	5.62		No	2.6 V				e0	No	EAR99	Tin/Lead (Sn/Pb)				AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	DUAL	GULL WING	235	1	0.65 mm	unknown		66	R-PDSO-G66	Not Qualified		2.7 V	2.6 V	COMMERCIAL	2.5 V				1		SYNCHRONOUS			0.29 mA					32MX8	3-STATE		1.2 mm	8				0.004 A			268435456 bit			COMMON	DDR DRAM	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST		YES	22.22 mm	10.16 mm
Mfr Part No K4H511638C-UCCC	Samsung	Datasheet	4304 In Stock	-	Min: 1 Mult: 1				YES			66	0.65 ns	200 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H511638C-UCCC		3	33554432 words	32000000	70 °C			PLASTIC/EPOXY	TSSOP		TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete			NOT SPECIFIED	5.81		Yes	2.6 V				e6	Yes		Tin/Bismuth (Sn97Bi3)						DRAMs	CMOS	DUAL	GULL WING	260		0.635 mm	unknown			R-PDSO-G66	Not Qualified			2.6 V	COMMERCIAL										0.4 mA					32MX16	3-STATE			16				0.005 A			536870912 bit			COMMON	DDR DRAM	8192	2,4,8	2,4,8
Mfr Part No K4H511638B-UCCC	Samsung	Datasheet	-	-	Min: 1 Mult: 1				YES			66	0.65 ns	200 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H511638B-UCCC		3	33554432 words	32000000	70 °C			PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete			NOT SPECIFIED	5.84		Yes	2.6 V					Yes						AUTO/SELF REFRESH		DRAMs	CMOS	DUAL	GULL WING	260	1	0.65 mm	compliant			R-PDSO-G66	Not Qualified		2.7 V	2.6 V	COMMERCIAL	2.5 V				1		SYNCHRONOUS								32MX16	3-STATE		1.2 mm	16				0.005 A			536870912 bit			COMMON	DDR DRAM	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST		YES	22.22 mm	10.16 mm
Mfr Part No MT46V16M16TG-5B:K	Micron	Datasheet	1941 In Stock	-	Min: 1 Mult: 1				YES			66	0.7 ns	200 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V16M16TG-5B:K			16777216 words	16000000	70 °C			PLASTIC/EPOXY	TSSOP	0.40 INCH, PLASTIC, TSOP-66	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP		30	5.62		No	2.6 V				e0	No	EAR99	Tin/Lead (Sn/Pb)				AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	DUAL	GULL WING	235	1	0.65 mm	unknown		66	R-PDSO-G66	Not Qualified		2.7 V	2.6 V	COMMERCIAL	2.5 V				1		SYNCHRONOUS			0.29 mA					16MX16	3-STATE		1.2 mm	16				0.004 A			268435456 bit			COMMON	DDR DRAM	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST		YES	22.22 mm	10.16 mm
Mfr Part No MT46V16M16FG-6IT:F	Micron	Datasheet	-	-	Min: 1 Mult: 1				YES			60	0.7 ns	167 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V16M16FG-6IT:F			16777216 words	16000000	85 °C	-40 °C		PLASTIC/EPOXY	TBGA	(8 X 14) MM, PLASTIC, FBGA-60	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY, THIN PROFILE	Obsolete	BGA		30	5.68		No	2.5 V				e0		EAR99	Tin/Lead/Silver (Sn/Pb/Ag)				AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	BOTTOM	BALL	235	1	1 mm	unknown		60	R-PBGA-B60	Not Qualified		2.7 V	2.6 V	INDUSTRIAL	2.3 V				1		SYNCHRONOUS			0.44 mA					16MX16	3-STATE		1.2 mm	16				0.004 A			268435456 bit			COMMON	DDR DRAM	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST		YES	14 mm	8 mm
Mfr Part No MT46V32M8P-5B:K	Micron	Datasheet	8 In Stock	-	Min: 1 Mult: 1				YES			66	0.7 ns	200 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V32M8P-5B:K		3	33554432 words	32000000	70 °C			PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP		30	8.37		Yes	2.6 V				e3	Yes	EAR99	Matte Tin (Sn)				AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	DUAL	GULL WING	260	1	0.65 mm	compliant		66	R-PDSO-G66	Not Qualified		2.7 V	2.6 V	COMMERCIAL	2.5 V				1		SYNCHRONOUS			0.29 mA					32MX8	3-STATE		1.2 mm	8				0.004 A			268435456 bit			COMMON	DDR DRAM	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST		YES	22.22 mm	10.16 mm
Mfr Part No MT46V64M4CY-5B:K	Micron	Datasheet	-	-	Min: 1 Mult: 1				YES			60	0.7 ns	200 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V64M4CY-5B:K			67108864 words	64000000	70 °C			PLASTIC/EPOXY	TBGA	TBGA, BGA60,9X12,40/32	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY, THIN PROFILE	Obsolete	BGA		30	5.62		Yes	2.6 V				e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)				AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	BOTTOM	BALL	260	1	1 mm	unknown		60	R-PBGA-B60	Not Qualified		2.7 V	2.6 V	COMMERCIAL	2.5 V				1		SYNCHRONOUS			0.29 mA					64MX4	3-STATE		1.2 mm	4				0.004 A			268435456 bit			COMMON	DDR DRAM	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST		YES	12.5 mm	8 mm
Mfr Part No K4H1G0838A-UCCC	Samsung	Datasheet	-	-	Min: 1 Mult: 1				YES			66	0.65 ns	200 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H1G0838A-UCCC		1	134217728 words	128000000	70 °C			PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete			NOT SPECIFIED	5.84	Non-Compliant	Yes	2.6 V				e3	Yes		MATTE TIN						DRAMs	CMOS	DUAL	GULL WING	225		0.635 mm	compliant	200 MHz		R-PDSO-G66	Not Qualified			2.6 V	COMMERCIAL										0.25 mA					128MX8	3-STATE			8				0.015 A			1073741824 bit			COMMON	DDR DRAM	8192	2,4,8	2,4,8								Lead Free

Memory (30)