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      Home / All Categories / Integrated Circuits (ICs) / Memory /

      The category is 'Memory'

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      • I/O Type
      • Ihs Manufacturer
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      • Manufacturer Part Number
      • Memory Density
      • Memory IC Type
      • Memory Width
      • Number of Words
      • Power Supplies
      • Power Supplies:

        2.6 V

      Image

      Part Number

      Manufacturer

      Datasheet

      Availability

      Pricing(USD)

      Quantity

      RoHS

      Mount

      Surface Mount

      Number of Pins

      Number of Terminals

      Access Time-Max

      Clock Frequency-Max (fCLK)

      Ihs Manufacturer

      Manufacturer

      Manufacturer Part Number

      Moisture Sensitivity Levels

      Number of Words

      Number of Words Code

      Operating Temperature-Max

      Operating Temperature-Min

      Package Body Material

      Package Code

      Package Description

      Package Equivalence Code

      Package Shape

      Package Style

      Part Life Cycle Code

      Part Package Code

      Reflow Temperature-Max (s)

      Risk Rank

      RoHS

      Rohs Code

      Supply Voltage-Nom (Vsup)

      JESD-609 Code

      Pbfree Code

      ECCN Code

      Terminal Finish

      Max Operating Temperature

      Min Operating Temperature

      Additional Feature

      HTS Code

      Subcategory

      Technology

      Terminal Position

      Terminal Form

      Peak Reflow Temperature (Cel)

      Number of Functions

      Terminal Pitch

      Reach Compliance Code

      Frequency

      Time@Peak Reflow Temperature-Max (s)

      Pin Count

      JESD-30 Code

      Qualification Status

      Operating Supply Voltage

      Supply Voltage-Max (Vsup)

      Power Supplies

      Temperature Grade

      Supply Voltage-Min (Vsup)

      Max Supply Voltage

      Min Supply Voltage

      Number of Ports

      Nominal Supply Current

      Operating Mode

      Supply Current-Max

      Access Time

      Data Bus Width

      Organization

      Output Characteristics

      Seated Height-Max

      Memory Width

      Address Bus Width

      Density

      Standby Current-Max

      Memory Density

      Max Frequency

      I/O Type

      Memory IC Type

      Refresh Cycles

      Sequential Burst Length

      Interleaved Burst Length

      Access Mode

      Self Refresh

      Length

      Width

      Radiation Hardening

      Lead Free
      MT46V16M16CY-5BIT:K

      Mfr Part No

      MT46V16M16CY-5BIT:K

      		Micron Datasheet

      -

      -

      Min: 1

      Mult: 1

      YES

      60

      0.7 ns

      200 MHz

      MICRON TECHNOLOGY INC

      Micron Technology Inc

      MT46V16M16CY-5BIT:K

      16777216 words

      16000000

      85 °C

      -40 °C

      PLASTIC/EPOXY

      TBGA

      TBGA, BGA60,9X12,40/32

      BGA60,9X12,40/32

      RECTANGULAR

      GRID ARRAY, THIN PROFILE

      Obsolete

      BGA

      30

      5.19

      Yes

      2.6 V

      e1

      Yes

      EAR99

      Tin/Silver/Copper (Sn/Ag/Cu)

      AUTO/SELF REFRESH

      8542.32.00.24

      DRAMs

      CMOS

      BOTTOM

      BALL

      260

      1

      1 mm

      compliant

      60

      R-PBGA-B60

      Not Qualified

      2.7 V

      2.6 V

      INDUSTRIAL

      2.5 V

      1

      SYNCHRONOUS

      0.29 mA

      16MX16

      3-STATE

      1.2 mm

      16

      0.004 A

      268435456 bit

      COMMON

      DDR DRAM

      8192

      2,4,8

      2,4,8

      FOUR BANK PAGE BURST

      YES

      12.5 mm

      8 mm

      MT46V16M16TG-6TIT:F

      Mfr Part No

      MT46V16M16TG-6TIT:F

      		Micron Datasheet

      -

      -

      Min: 1

      Mult: 1

      Surface Mount

      YES

      66

      66

      0.7 ns

      167 MHz

      MICRON TECHNOLOGY INC

      Micron Technology Inc

      MT46V16M16TG-6TIT:F

      16777216 words

      16000000

      85 °C

      -40 °C

      PLASTIC/EPOXY

      TSSOP

      0.40 INCH, PLASTIC, TSOP-66

      TSSOP66,.46

      RECTANGULAR

      SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

      Obsolete

      TSOP

      30

      8.53

      Compliant

      No

      2.5 V

      e0

      EAR99

      Tin/Lead (Sn/Pb)

      85 °C

      -40 °C

      AUTO/SELF REFRESH

      8542.32.00.24

      DRAMs

      CMOS

      DUAL

      GULL WING

      235

      1

      0.65 mm

      unknown

      66

      R-PDSO-G66

      Not Qualified

      2.5 V

      2.7 V

      2.6 V

      INDUSTRIAL

      2.3 V

      2.7 V

      2.3 V

      1

      220 mA

      SYNCHRONOUS

      0.44 mA

      700 ps

      16 b

      16MX16

      3-STATE

      1.2 mm

      16

      15 b

      256 Mb

      0.004 A

      268435456 bit

      333 MHz

      COMMON

      DDR DRAM

      8192

      2,4,8

      2,4,8

      FOUR BANK PAGE BURST

      YES

      22.22 mm

      10.16 mm

      No

      MT46V16M16CV-5B:K

      Mfr Part No

      MT46V16M16CV-5B:K

      		Micron Datasheet

      -

      -

      Min: 1

      Mult: 1

      YES

      60

      0.7 ns

      200 MHz

      MICRON TECHNOLOGY INC

      Micron Technology Inc

      MT46V16M16CV-5B:K

      16777216 words

      16000000

      70 °C

      PLASTIC/EPOXY

      TBGA

      (8 X 12.5) MM, PLASTIC, FBGA-60

      BGA60,9X12,40/32

      RECTANGULAR

      GRID ARRAY, THIN PROFILE

      Obsolete

      BGA

      30

      5.19

      No

      2.6 V

      e0

      No

      EAR99

      Tin/Lead/Silver (Sn/Pb/Ag)

      AUTO/SELF REFRESH

      8542.32.00.24

      DRAMs

      CMOS

      BOTTOM

      BALL

      235

      1

      1 mm

      unknown

      60

      R-PBGA-B60

      Not Qualified

      2.7 V

      2.6 V

      COMMERCIAL

      2.5 V

      1

      SYNCHRONOUS

      0.29 mA

      16MX16

      3-STATE

      1.2 mm

      16

      0.004 A

      268435456 bit

      COMMON

      DDR DRAM

      8192

      2,4,8

      2,4,8

      FOUR BANK PAGE BURST

      YES

      12.5 mm

      8 mm

      MT46V32M8CY5B:K

      Mfr Part No

      MT46V32M8CY5B:K

      		Micron Datasheet

      -

      -

      Min: 1

      Mult: 1

      YES

      60

      0.7 ns

      200 MHz

      MICRON TECHNOLOGY INC

      Micron Technology Inc

      MT46V32M8CY-5B:K

      33554432 words

      32000000

      70 °C

      PLASTIC/EPOXY

      TBGA

      TBGA, BGA60,9X12,40/32

      BGA60,9X12,40/32

      RECTANGULAR

      GRID ARRAY, THIN PROFILE

      Obsolete

      BGA

      30

      5.6

      Yes

      2.6 V

      e1

      Yes

      EAR99

      Tin/Silver/Copper (Sn/Ag/Cu)

      AUTO/SELF REFRESH

      8542.32.00.24

      DRAMs

      CMOS

      BOTTOM

      BALL

      260

      1

      1 mm

      compliant

      60

      R-PBGA-B60

      Not Qualified

      2.7 V

      2.6 V

      COMMERCIAL

      2.5 V

      1

      SYNCHRONOUS

      0.29 mA

      32MX8

      3-STATE

      1.2 mm

      8

      0.004 A

      268435456 bit

      COMMON

      DDR DRAM

      8192

      2,4,8

      2,4,8

      FOUR BANK PAGE BURST

      YES

      12.5 mm

      8 mm

      MT46V16M16TG-5B:C

      Mfr Part No

      MT46V16M16TG-5B:C

      		Micron Datasheet

      -

      -

      Min: 1

      Mult: 1

      YES

      66

      0.7 ns

      200 MHz

      MICRON TECHNOLOGY INC

      Micron Technology Inc

      MT46V16M16TG-5B:C

      16777216 words

      16000000

      70 °C

      PLASTIC/EPOXY

      TSOP2

      0.400 INCH, PLASTIC, TSOP-66

      TSSOP66,.46

      RECTANGULAR

      SMALL OUTLINE, THIN PROFILE

      Obsolete

      TSOP

      30

      5.64

      No

      2.6 V

      e0

      No

      EAR99

      Tin/Lead (Sn/Pb)

      AUTO/SELF REFRESH

      8542.32.00.24

      DRAMs

      CMOS

      DUAL

      GULL WING

      235

      1

      0.65 mm

      unknown

      66

      R-PDSO-G66

      Not Qualified

      2.7 V

      2.6 V

      COMMERCIAL

      2.5 V

      1

      SYNCHRONOUS

      16MX16

      3-STATE

      1.2 mm

      16

      268435456 bit

      COMMON

      DDR DRAM

      8192

      2,4,8

      2,4,8

      FOUR BANK PAGE BURST

      YES

      22.22 mm

      10.16 mm

      MT46V64M8FN-5B:F

      Mfr Part No

      MT46V64M8FN-5B:F

      		Micron Datasheet

      -

      -

      Min: 1

      Mult: 1

      Surface Mount

      YES

      60

      60

      0.7 ns

      200 MHz

      MICRON TECHNOLOGY INC

      Micron Technology Inc

      MT46V64M8FN-5B:F

      67108864 words

      64000000

      70 °C

      PLASTIC/EPOXY

      TBGA

      10 X 12.50 MM, PLASTIC, FBGA-60

      BGA60,9X12,40/32

      RECTANGULAR

      GRID ARRAY, THIN PROFILE

      Obsolete

      BGA

      30

      5.26

      Non-Compliant

      No

      2.6 V

      e0

      EAR99

      Tin/Lead (Sn/Pb)

      70 °C

      0 °C

      AUTO/SELF REFRESH

      8542.32.00.28

      DRAMs

      CMOS

      BOTTOM

      BALL

      235

      1

      1 mm

      unknown

      60

      R-PBGA-B60

      Not Qualified

      2.6 V

      2.7 V

      2.6 V

      COMMERCIAL

      2.5 V

      2.7 V

      2.5 V

      1

      195 mA

      SYNCHRONOUS

      0.45 mA

      700 ps

      8 b

      64MX8

      3-STATE

      1.2 mm

      8

      15 b

      512 Mb

      0.005 A

      536870912 bit

      400 MHz

      COMMON

      DDR DRAM

      8192

      2,4,8

      2,4,8

      FOUR BANK PAGE BURST

      YES

      12.5 mm

      10 mm

      No

      K4H1G0438A-UCCC

      Mfr Part No

      K4H1G0438A-UCCC

      		Samsung Datasheet

      -

      -

      Min: 1

      Mult: 1

      YES

      66

      0.65 ns

      200 MHz

      SAMSUNG SEMICONDUCTOR INC

      Samsung Semiconductor

      K4H1G0438A-UCCC

      1

      268435456 words

      256000000

      70 °C

      PLASTIC/EPOXY

      TSSOP

      TSSOP, TSSOP66,.46

      TSSOP66,.46

      RECTANGULAR

      SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

      Obsolete

      5.84

      Non-Compliant

      Yes

      2.6 V

      e3

      Yes

      MATTE TIN

      DRAMs

      CMOS

      DUAL

      GULL WING

      225

      0.635 mm

      compliant

      200 MHz

      NOT SPECIFIED

      R-PDSO-G66

      Not Qualified

      2.6 V

      COMMERCIAL

      0.25 mA

      256MX4

      3-STATE

      4

      0.015 A

      1073741824 bit

      COMMON

      DDR DRAM

      8192

      2,4,8

      2,4,8

      Lead Free

      K4H510838B-UCCC

      Mfr Part No

      K4H510838B-UCCC

      		Samsung Datasheet

      -

      -

      Min: 1

      Mult: 1

      YES

      66

      0.65 ns

      200 MHz

      SAMSUNG SEMICONDUCTOR INC

      Samsung Semiconductor

      K4H510838B-UCCC

      3

      67108864 words

      64000000

      70 °C

      PLASTIC/EPOXY

      TSSOP

      TSSOP, TSSOP66,.46

      TSSOP66,.46

      RECTANGULAR

      SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

      Obsolete

      NOT SPECIFIED

      5.84

      Yes

      2.6 V

      Yes

      DRAMs

      CMOS

      DUAL

      GULL WING

      260

      0.635 mm

      compliant

      R-PDSO-G66

      Not Qualified

      2.6 V

      COMMERCIAL

      64MX8

      3-STATE

      8

      0.005 A

      536870912 bit

      COMMON

      DDR DRAM

      8192

      2,4,8

      2,4,8

      MT46V16M16TG-5BIT:F

      Mfr Part No

      MT46V16M16TG-5BIT:F

      		Micron Datasheet

      -

      -

      Min: 1

      Mult: 1

      YES

      66

      0.7 ns

      200 MHz

      MICRON TECHNOLOGY INC

      Micron Technology Inc

      MT46V16M16TG-5BIT:F

      16777216 words

      16000000

      85 °C

      -40 °C

      PLASTIC/EPOXY

      TSSOP

      0.40 INCH, PLASTIC, TSOP-66

      TSSOP66,.46

      RECTANGULAR

      SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

      Obsolete

      TSOP

      30

      5.68

      No

      2.6 V

      e3

      EAR99

      Matte Tin (Sn)

      AUTO/SELF REFRESH

      8542.32.00.24

      DRAMs

      CMOS

      DUAL

      GULL WING

      260

      1

      0.65 mm

      unknown

      66

      R-PDSO-G66

      Not Qualified

      2.7 V

      2.6 V

      INDUSTRIAL

      2.5 V

      1

      SYNCHRONOUS

      0.51 mA

      16MX16

      3-STATE

      1.2 mm

      16

      0.004 A

      268435456 bit

      COMMON

      DDR DRAM

      8192

      2,4,8

      2,4,8

      FOUR BANK PAGE BURST

      YES

      22.22 mm

      10.16 mm

      MT46V32M16TG-5BIT:F

      Mfr Part No

      MT46V32M16TG-5BIT:F

      		Micron Datasheet

      -

      -

      Min: 1

      Mult: 1

      YES

      66

      0.7 ns

      200 MHz

      MICRON TECHNOLOGY INC

      Micron Technology Inc

      MT46V32M16TG-5BIT:F

      33554432 words

      32000000

      85 °C

      -40 °C

      PLASTIC/EPOXY

      TSSOP

      0.400 INCH, PLASTIC, TSOP-66

      TSSOP66,.46

      RECTANGULAR

      SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

      Obsolete

      TSOP

      30

      5.47

      No

      2.6 V

      e0

      No

      EAR99

      Tin/Lead (Sn/Pb)

      AUTO/SELF REFRESH

      8542.32.00.28

      DRAMs

      CMOS

      DUAL

      GULL WING

      235

      1

      0.65 mm

      unknown

      66

      R-PDSO-G66

      Not Qualified

      2.7 V

      2.6 V

      INDUSTRIAL

      2.5 V

      1

      SYNCHRONOUS

      0.48 mA

      32MX16

      3-STATE

      1.2 mm

      16

      0.005 A

      536870912 bit

      COMMON

      DDR DRAM

      8192

      2,4,8

      2,4,8

      FOUR BANK PAGE BURST

      YES

      22.22 mm

      10.16 mm