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Power Supplies:
3.3 V

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Mount	Package / Case	Surface Mount	Number of Pins	Number of Terminals	Manufacturer Package Identifier	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Typical Operating Supply Voltage	Unit Weight	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Frequency	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Interface	Max Supply Voltage	Min Supply Voltage	Memory Size	Number of Ports	Nominal Supply Current	Operating Mode	Supply Current-Max	Access Time	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Max Frequency	Screening Level	Parallel/Serial	I/O Type	Sync/Async	Word Size	Memory IC Type	Programming Voltage	Standby Voltage-Min	Alternate Memory Width	Data Polling	Toggle Bit	Command User Interface	Number of Sectors/Size	Sector Size	Ready/Busy	Boot Block	Refresh Cycles	Common Flash Interface	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Product Category	Height	Length	Width	Radiation Hardening	Lead Free
Mfr Part No MT48LC8M16A2F4-75:G	Micron	Datasheet	-	-	Min: 1 Mult: 1				YES		54		5.4 ns		133 MHz		MICRON TECHNOLOGY INC		Micron Technology Inc	MT48LC8M16A2F4-75:G												8388608 words	8000000	70 °C		PLASTIC/EPOXY	VFBGA	8 X 8 MM, VFBGA-54	BGA54,9X9,32	SQUARE	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Obsolete	BGA	30	5.63		No				3.3 V								e0		EAR99		Tin/Lead/Silver (Sn/Pb/Ag)			AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS	BOTTOM	BALL	235	1	0.8 mm	unknown		54	S-PBGA-B54	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V					1		SYNCHRONOUS	0.31 mA			8MX16	3-STATE	1 mm	16				0.002 A	134217728 bit				COMMON			SYNCHRONOUS DRAM											4096		1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES			8 mm	8 mm
Mfr Part No CY7C1069AV33-10ZC	Cypress Semiconductor	Datasheet	-	-	Min: 1 Mult: 1				YES		54		10 ns				CYPRESS SEMICONDUCTOR CORP		Cypress Semiconductor	CY7C1069AV33-10ZC								3				2097152 words	2000000	70 °C		PLASTIC/EPOXY	TSOP2	TSOP2-54	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	NOT SPECIFIED	8.73		No				3.3 V								e0		3A991.B.2.A		Tin/Lead (Sn/Pb)				8542.32.00.41	SRAMs	CMOS	DUAL	GULL WING	235	1	0.8 mm	not_compliant		54	R-PDSO-G54	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V							ASYNCHRONOUS	0.275 mA			2MX8	3-STATE	1.2 mm	8				0.05 A	16777216 bit			PARALLEL	COMMON			STANDARD SRAM		3 V																	22.415 mm	10.16 mm
Mfr Part No K4S561632J-UC75	Samsung	Datasheet	-	-	Min: 1 Mult: 1		Surface Mount		YES	54	54	TSOP(II)54	5.4 ns		133 MHz		SAMSUNG SEMICONDUCTOR INC		Samsung Semiconductor	K4S561632J-UC75				SDRAM				2				16777216 words	16000000	70 °C		PLASTIC/EPOXY	TSOP		TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete		NOT SPECIFIED	5.65	Compliant	Yes				3.3 V						Tape and Reel		e6	Yes			Tin/Bismuth (Sn97Bi3)	70 °C	0 °C			DRAMs	CMOS	DUAL	GULL WING	260		0.8 mm	unknown	133 MHz		R-PDSO-G54	Not Qualified	3.3 V		3.3 V	COMMERCIAL		Parallel	3.6 V	3 V	32 MB		110 mA		0.12 mA	7.5 ns		16MX16	3-STATE		16	15 b		256 Mb	0.002 A	268435456 bit	133 MHz			COMMON			SYNCHRONOUS DRAM											8192		1,2,4,8,FP	1,2,4,8				1.2 mm				Lead Free
Mfr Part No GS74116AGX-8I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	6 Weeks		BGA-48	YES		48		8 ns	GSI Technology		135	GSI TECHNOLOGY	Parallel	GSI Technology	GS74116AGX-8I		3.6 V	+ 85 C	SDR	3 V	- 40 C		3	Surface Mount	SMD/SMT	16 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA48,6X8,30	BGA48,6X8,30	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	BGA	NOT SPECIFIED	5.2	Details	Yes	FBGA	3.6 V	3 V	3.3 V	Asynchronous	3.3000 V		Industrial grade	-40 to 85 °C		GS74116AGX	e1	Yes	3A991.B.2.B	Asynchronous	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)				8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	0.75 mm	compliant		48	R-PBGA-B48	Not Qualified		3.6 V	3.3 V	INDUSTRIAL	3 V				4 Mbit	1		ASYNCHRONOUS	140 mA	8 ns		256 k x 16	3-STATE	1.2 mm	16	18 Bit	SRAM	4 Mbit	0.02 A	4194304 bit		Industrial	PARALLEL	COMMON			STANDARD SRAM		3 V															SRAM		10 mm	6 mm
Mfr Part No IS42S16800D-7TL	ISSI	Datasheet	-	-	Min: 1 Mult: 1				YES		54		5.4 ns		143 MHz		INTEGRATED SILICON SOLUTION INC		Integrated Silicon Solution Inc	IS42S16800D-7TL								3				8388608 words	8000000	70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	10	5.04		Yes				3.3 V								e3		EAR99		Matte Tin (Sn) - annealed			AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS	DUAL	GULL WING	260	1	0.8 mm	compliant		54	R-PDSO-G54	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V					1		SYNCHRONOUS	0.13 mA			8MX16	3-STATE	1.2 mm	16				0.001 A	134217728 bit				COMMON			SYNCHRONOUS DRAM											4096		1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES			22.22 mm	10.16 mm
Mfr Part No M29W320DB70N6E	STMicroelectronics	Datasheet	-	-	Min: 1 Mult: 1				YES		48		70 ns				MICRON TECHNOLOGY INC		Micron Technology Inc	M29W320DB70N6E												2097152 words	2000000	85 °C	-40 °C	PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP48,.8,20	TSSOP48,.8,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP	30	5.61		Yes				3.3 V								e3	Yes	3A991.B.1.A	NOR TYPE	Matte Tin (Sn)			BOTTOM BOOT BLOCK	8542.32.00.51	Flash Memories	CMOS	DUAL	GULL WING	260	1	0.5 mm	compliant		48	R-PDSO-G48	Not Qualified		3.6 V	3.3 V	INDUSTRIAL	2.7 V							ASYNCHRONOUS	0.02 mA			2MX16		1.2 mm	16				0.0001 A	33554432 bit			PARALLEL				FLASH	3 V		8	YES	YES	YES	1,2,1,63	16K,8K,32K,64K	YES	BOTTOM		YES							18.4 mm	12 mm
Mfr Part No CY7C1347D-200AC	Cypress Semiconductor	Datasheet	-	-	Min: 1 Mult: 1				YES		100		3 ns				CYPRESS SEMICONDUCTOR CORP		Cypress Semiconductor	CY7C1347D-200AC								3				131072 words	128000	70 °C		PLASTIC/EPOXY	LQFP	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	30	5.5		No				3.3 V								e0	No	3A991.B.2.A		TIN LEAD (800)			PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	QUAD	GULL WING	225	1	0.65 mm	compliant		100	R-PQFP-G100	Not Qualified		3.63 V	3.3 V	COMMERCIAL	3.135 V							SYNCHRONOUS	0.36 mA			128KX36	3-STATE	1.6 mm	36				0.01 A	4718592 bit			PARALLEL	COMMON			CACHE SRAM		3.14 V																	20 mm	14 mm
Mfr Part No MT48LC16M8A2FB-75:G	Micron	Datasheet	-	-	Min: 1 Mult: 1				YES		60		5.4 ns		133 MHz		MICRON TECHNOLOGY INC		Micron Technology Inc	MT48LC16M8A2FB-75:G												16777216 words	16000000	70 °C		PLASTIC/EPOXY	TFBGA	8 X 16 MM, PLASTIC, FBGA-60	BGA60,8X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA	30	8.53		No				3.3 V								e0		EAR99		Tin/Lead/Silver (Sn/Pb/Ag)			AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS	BOTTOM	BALL	235	1	0.8 mm	unknown		60	R-PBGA-B60	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V					1		SYNCHRONOUS	0.31 mA			16MX8	3-STATE	1.2 mm	8				0.002 A	134217728 bit				COMMON			SYNCHRONOUS DRAM											4096		1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES			16 mm	8 mm
Mfr Part No MT48LC32M8A2FB-7E:D	Micron	Datasheet	-	-	Min: 1 Mult: 1				YES		60		5.4 ns		143 MHz		MICRON TECHNOLOGY INC		Micron Technology Inc	MT48LC32M8A2FB-7E:D												33554432 words	32000000	70 °C		PLASTIC/EPOXY	TFBGA	8 X 16 MM, FBGA-60	BGA60,8X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA	30	5.64		No				3.3 V								e0	No	EAR99		Tin/Lead/Silver (Sn/Pb/Ag)			AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	BOTTOM	BALL	235	1	0.8 mm	unknown		60	R-PBGA-B60	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V					1		SYNCHRONOUS	0.285 mA			32MX8	3-STATE	1.2 mm	8				0.002 A	268435456 bit				COMMON			SYNCHRONOUS DRAM											8192		1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES			16 mm	8 mm
Mfr Part No MT48LC8M16A2TG-7E:G	Micron	Datasheet	-	-	Min: 1 Mult: 1				YES		54		5.4 ns		143 MHz		MICRON TECHNOLOGY INC		Micron Technology Inc	MT48LC8M16A2TG-7E:G												8388608 words	8000000	70 °C		PLASTIC/EPOXY	TSOP2	0.400 INCH, PLASTIC, TSOP2-54	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	30	8.49		No				3.3 V								e0		EAR99		Tin/Lead (Sn/Pb)			AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS	DUAL	GULL WING	235	1	0.8 mm	unknown		54	R-PDSO-G54	Not Qualified	3.3 V	3.6 V	3.3 V	COMMERCIAL	3 V					1		SYNCHRONOUS	0.33 mA			8MX16	3-STATE	1.2 mm	16				0.002 A	134217728 bit				COMMON			SYNCHRONOUS DRAM											4096		1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES			22.22 mm	10.16 mm
Mfr Part No MT48LC16M8A2BB-7E:G	Micron	Datasheet	-	-	Min: 1 Mult: 1				YES		60		5.4 ns		143 MHz		MICRON TECHNOLOGY INC		Micron Technology Inc	MT48LC16M8A2BB-7E:G												16777216 words	16000000	70 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA60,8X15,32	BGA60,8X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA	30	8.34		Yes				3.3 V								e1		EAR99		Tin/Silver/Copper (Sn/Ag/Cu)			AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	unknown		60	R-PBGA-B60	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V					1		SYNCHRONOUS	0.33 mA			16MX8	3-STATE	1.2 mm	8				0.002 A	134217728 bit				COMMON			SYNCHRONOUS DRAM											4096		1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES			16 mm	8 mm
Mfr Part No K4S281632I-UC75	Samsung	Datasheet	-	-	Min: 1 Mult: 1				YES		54		5.4 ns		133 MHz		SAMSUNG SEMICONDUCTOR INC		Samsung Semiconductor	K4S281632I-UC75								3				8388608 words	8000000	70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete		NOT SPECIFIED	8.33		Yes				3.3 V								e6	Yes			Tin/Bismuth (Sn97Bi3)			AUTO/SELF REFRESH		DRAMs	CMOS	DUAL	GULL WING	260	1	0.8 mm	compliant			R-PDSO-G54	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V					1		SYNCHRONOUS	0.2 mA			8MX16	3-STATE	1.2 mm	16				0.002 A	134217728 bit				COMMON			SYNCHRONOUS DRAM											4096		1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES			22.22 mm	10.16 mm
Mfr Part No W9825G6JH-6	Winbond	Datasheet	684 In Stock	-	Min: 1 Mult: 1				YES		54		5 ns		166 MHz		WINBOND ELECTRONICS CORP		Winbond Electronics Corp	W9825G6JH-6								3				16777216 words	16000000	70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	NOT SPECIFIED	8.43		Yes				3.3 V								e3		EAR99		Matte Tin (Sn) - annealed			AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	DUAL	GULL WING	NOT SPECIFIED	1	0.8 mm	unknown		54	R-PDSO-G54	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V					1		SYNCHRONOUS	0.08 mA			16MX16	3-STATE	1.2 mm	16				0.002 A	268435456 bit				COMMON			SYNCHRONOUS DRAM											8192		1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES			22.22 mm	10.16 mm
Mfr Part No GS74116AGP-10	GSI Technology	Datasheet	72 In Stock	-	Min: 1 Mult: 1	6 Weeks	Surface Mount	TSOP-44	YES	44	44		10 ns	GSI Technology		135	GSI TECHNOLOGY	Parallel	GSI Technology	GS74116AGP-10	-	3.6 V	+ 70 C	SDR	3 V	0 C	Yes	3	Surface Mount	SMD/SMT	16 Bit	256 kWords	256000	70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSOP44,.46,32	TSOP44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Active	TSOP2	NOT SPECIFIED	1.36	Compliant	Yes	TSOP-II	3.6 V	3 V	3.3 V	Asynchronous	3.3000 V	0.016882 oz	Commercial grade	0 to 70 °C		GS74116AGP	e3	Yes	3A991.B.2.B	Asynchronous	Matte Tin (Sn)	70 °C	0 °C		8542.32.00.41	Memory & Data Storage	CMOS	DUAL	GULL WING	260	1	0.8 mm	compliant		44	R-PDSO-G44	Not Qualified	3.3 V	3.6 V	3.3 V	COMMERCIAL	3 V		3.6 V	3 V	4 Mbit	1	105 mA	ASYNCHRONOUS	105 mA	10 ns		256 k x 16	3-STATE	1.2 mm	16	18 Bit	SRAM	4 Mbit	0.01 A	4194304 bit		Commercial	PARALLEL	COMMON	Asynchronous	16 b	STANDARD SRAM		3 V															SRAM		18.41 mm	10.16 mm	No
Mfr Part No GS71116AGU-12I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	6 Weeks		BGA-48	YES		48		12 ns	GSI Technology		240	GSI TECHNOLOGY	Parallel	GSI Technology	GS71116AGU-12I			+ 85 C	SDR		- 40 C		3		SMD/SMT		65536 words	64000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA48,6X8,30	BGA48,6X8,30	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	BGA	NOT SPECIFIED	5.17	Details	Yes		3.6 V	3 V	3.3 V							GS71116AGU	e1	Yes	3A991.B.2.B	Asynchronous	TIN SILVER COPPER				8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	0.75 mm	compliant		48	R-PBGA-B48	Not Qualified		3.6 V	3.3 V	INDUSTRIAL	3 V				1 Mbit			ASYNCHRONOUS	90 mA	12 ns		64 k x 16	3-STATE	1.2 mm	16		SRAM		0.005 A	1048576 bit			PARALLEL	COMMON			STANDARD SRAM		2 V															SRAM		8 mm	6 mm
Mfr Part No GS71108AU-10	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	6 Weeks			YES		48		10 ns	GSI Technology		240	GSI TECHNOLOGY		GSI Technology	GS71108AU-10		3.6 V			3 V			3	Surface Mount		8 Bit	128 kWords	128000	70 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA48,6X8,30	BGA48,6X8,30	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	BGA	NOT SPECIFIED	5.21		No	FBGA			3.3 V	Asynchronous	3.3000 V		Commercial grade	0 to 70 °C		GS71108AGU	e0	No	3A991.B.2.B		Tin/Lead (Sn/Pb)				8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	0.75 mm	compliant		48	R-PBGA-B48	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V					1		ASYNCHRONOUS	0.08 mA			128KX8	3-STATE	1.2 mm	8	17 Bit	SRAM	1 Mbit	0.002 A	1048576 bit		Commercial	PARALLEL	COMMON			STANDARD SRAM		3 V															SRAM		8 mm	6 mm
Mfr Part No GS74117AGX-10	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	6 Weeks		BGA-119	YES		48		10 ns	GSI Technology		135	GSI TECHNOLOGY	Parallel	GSI Technology	GS74117AGX-10		3.6 V	+ 70 C	SDR	3 V	0 C		3	Surface Mount	SMD/SMT	16 Bit	256 kWords	256000	70 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA48,6X8,30	BGA48,6X8,30	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	BGA	NOT SPECIFIED	5.23	Details	Yes	FBGA	3.6 V	3 V	3.3 V	Asynchronous	3.3000 V		Commercial grade	0 to 70 °C		GS74117AGX	e1	Yes	3A991.B.2.B	Asynchronous	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)				8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	0.75 mm	compliant		48	R-PBGA-B48	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V				4 Mbit	1		ASYNCHRONOUS	105 mA	10 ns		256 k x 16	3-STATE	1.2 mm	16	18 Bit	SRAM	4 Mbit	0.01 A	4194304 bit		Commercial	PARALLEL	COMMON			STANDARD SRAM		3 V															SRAM		10 mm	6 mm
Mfr Part No K4S641632K-UC75	Samsung	Datasheet	16 In Stock	-	Min: 1 Mult: 1				YES		54		5.4 ns		133 MHz		SAMSUNG SEMICONDUCTOR INC		Samsung Semiconductor	K4S641632K-UC75								3				4194304 words	4000000	70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete			5.79		Yes				3.3 V								e6	Yes	EAR99		Tin/Bismuth (Sn97Bi3)			AUTO/SELF REFRESH		DRAMs	CMOS	DUAL	GULL WING		1	0.8 mm	unknown			R-PDSO-G54	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V					1		SYNCHRONOUS	0.085 mA			4MX16	3-STATE	1.2 mm	16				0.001 A	67108864 bit				COMMON			SYNCHRONOUS DRAM											4096		1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES			22.22 mm	10.16 mm
Mfr Part No W9864G2GH-6	Winbond	Datasheet	580 In Stock	-	Min: 1 Mult: 1				YES		86		5 ns		166 MHz		WINBOND ELECTRONICS CORP		Winbond Electronics Corp	W9864G2GH-6								3				2097152 words	2000000	70 °C		PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP86,.46,20	TSSOP86,.46,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP2	40	8.4	Non-Compliant	Yes				3.3 V									Yes	EAR99			70 °C	0 °C	AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS	DUAL	GULL WING	260	1	0.5 mm	compliant		86	R-PDSO-G86	Not Qualified	3.3 V	3.6 V	3.3 V	COMMERCIAL	3 V					1		SYNCHRONOUS	0.14 mA		32 b	2MX32	3-STATE	1.2 mm	32	13 b		64 Mb	0.003 A	67108864 bit	166 MHz			COMMON			DDR DRAM											4096		1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES			22.22 mm	10.16 mm	No
Mfr Part No K4S281632F-UC75	Samsung	Datasheet	-	-	Min: 1 Mult: 1				YES		54		6 ns		133 MHz		SAMSUNG SEMICONDUCTOR INC		Samsung Semiconductor	K4S281632F-UC75								3				8388608 words	8000000	70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete		NOT SPECIFIED	8.4		Yes				3.3 V								e6	Yes	EAR99		Tin/Bismuth (Sn97Bi3)			AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS	DUAL	GULL WING	260	1	0.8 mm	unknown			R-PDSO-G54	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V					1		SYNCHRONOUS	0.2 mA			8MX16	3-STATE	1.2 mm	16				0.002 A	134217728 bit				COMMON			SYNCHRONOUS DRAM											4096		1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES			22.22 mm	10.16 mm

Memory (317)