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The category is 'Memory'

Memory (19)

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Series:
GS8160E18DGT

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	ECCN Code	Type	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	Memory IC Type	Product Category	Length	Width	Radiation Hardening
	Mfr Part No GS8160E18DGT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	200 MHz	2, 2.7 V	+ 100 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords													Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8160E18DGT		DCD Synchronous Burst					Memory & Data Storage								100					18 Mbit	2		210 mA, 215 mA	6.5 ns		1 M x 18				SRAM	18 Mbit		Industrial			SRAM
	Mfr Part No GS8160E18DGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		36		Parallel	GSI Technology		200 MHz			+ 100 C	SDR		- 40 C	Yes		SMD/SMT															Details			3.6 V	2.3 V			SyncBurst				Tray	GS8160E18DGT		Pipeline/Flow Through					Memory & Data Storage													18 Mbit			215 mA	6.5 ns		1 M x 18				SRAM						SRAM
	Mfr Part No GS8160E18DGT-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		250 MHz	250 MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords													Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8160E18DGT		DCD Synchronous Burst					Memory & Data Storage								100					18 Mbit	2		205 mA, 225 mA	5.5 ns	Flow-Through/Pipelined	1 M x 18			20 Bit	SRAM	18 Mbit		Commercial			SRAM
	Mfr Part No GS8160E18DGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		18		Parallel	GSI Technology		250 MHz	250 MHz	2, 2.7 V	+ 100 C	SDR	1.7, 2.3 V	- 40 C	Yes		SMD/SMT	18 Bit														Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V		-40 to 85 °C	Tray	GS8160E18DGT		DCD Synchronous Burst					Memory & Data Storage								100					18 Mbit			225 mA, 245 mA	5.5		1 M x 18				SRAM		18				SRAM
	Mfr Part No GS8160E18DGT-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		36		Parallel	GSI Technology		150 MHz			+ 85 C	SDR		0 C	Yes		SMD/SMT															Details			3.6 V	2.3 V			SyncBurst				Tray	GS8160E18DGT		Pipeline/Flow Through					Memory & Data Storage													18 Mbit			170 mA, 180 mA	7.5 ns		1 M x 18				SRAM						SRAM
	Mfr Part No GS8160E18DGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		36		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		0 C	Yes		SMD/SMT															Details			3.6 V	2.3 V			SyncBurst				Tray	GS8160E18DGT		Pipeline/Flow Through					Memory & Data Storage													18 Mbit			195 mA	6.5 ns		1 M x 18				SRAM						SRAM
	Mfr Part No GS8160E18DGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	200 MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords													Compliant		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8160E18DGT		DCD Synchronous Burst					Memory & Data Storage								100					18 Mbit	2		190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18			20 Bit	SRAM	18 Mbit		Commercial			SRAM
	Mfr Part No GS8160E18DGT-333V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		333 MHz	333 MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords													Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8160E18DGT		DCD Synchronous Burst					Memory & Data Storage								100					18 Mbit	2		220 mA, 280 mA	5 ns	Flow-Through/Pipelined	1 M x 18			20 Bit	SRAM	18 Mbit		Commercial			SRAM
	Mfr Part No GS8160E18DGT-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 100 C	SDR		- 40 C	Yes		SMD/SMT															Details			3.6 V	2.3 V			SyncBurst				Tray	GS8160E18DGT		Pipeline/Flow Through					Memory & Data Storage													18 Mbit			230 mA, 250 mA	5.5 ns		1 M x 18				SRAM						SRAM
	Mfr Part No GS8160E18DGT-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		150 MHz	150 MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords													Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8160E18DGT		DCD Synchronous Burst					Memory & Data Storage								100					18 Mbit	2		160 mA, 180 mA	7.5 ns	Flow-Through/Pipelined	1 M x 18			20 Bit	SRAM	18 Mbit		Commercial			SRAM
	Mfr Part No GS8160E18DGT-150IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		150 MHz	150 MHz	2, 2.7 V	+ 100 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords													Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8160E18DGT		DCD Synchronous Burst					Memory & Data Storage								100					18 Mbit	2		180 mA, 200 mA	7.5 ns	Flow-Through/Pipelined	1 M x 18			20 Bit	SRAM	18 Mbit		Industrial			SRAM
	Mfr Part No GS8160E18DGT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		36		Parallel	GSI Technology		250 MHz			+ 85 C	SDR		0 C	Yes		SMD/SMT															Details			3.6 V	2.3 V			SyncBurst				Tray	GS8160E18DGT		Pipeline/Flow Through					Memory & Data Storage													18 Mbit			210 mA, 230 mA	5.5 ns		1 M x 18				SRAM						SRAM
	Mfr Part No GS8160E18DGT-150I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		36		Parallel	GSI Technology		150 MHz			+ 100 C	SDR		- 40 C	Yes		SMD/SMT															Compliant			3.6 V	2.3 V			SyncBurst				Bulk	GS8160E18DGT		Pipeline/Flow Through	100 °C	-40 °C			Memory & Data Storage													18 Mbit	2		190 mA, 200 mA	7.5 ns		1 M x 18			21 b	SRAM	18 Mb					SRAM			No
	Mfr Part No GS8160E18DGT-333I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	36		Parallel	GSI Technology		333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 100 C	SDR	2.3, 3 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords													Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS8160E18DGT		Pipeline/Flow Through	100 °C	-40 °C			Memory & Data Storage								100					18 Mbit	2		260 mA, 305 mA	4.5 ns	Flow-Through/Pipelined	1 M x 18			21 Bit	SRAM	18 Mbit		Industrial			SRAM			No
	Mfr Part No GS8160E18DGT-375	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	36		Parallel	GSI Technology		375 MHz	238@Flow-Through/375@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords													Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8160E18DGT		Pipeline/Flow Through					Memory & Data Storage								100					18 Mbit	2		250 mA, 320 mA	4.2 ns	Flow-Through/Pipelined	1 M x 18			20 Bit	SRAM	18 Mbit		Commercial			SRAM
	Mfr Part No GS8160E18DGT-333IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100					SDR			Parallel			333 MHz	333 MHz	2, 2.7 V	+ 100 C		1.7, 2.3 V	- 40 C		Surface Mount	SMD/SMT	18 Bit	1 MWords															TQFP	2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Industrial grade	-40 to 85 °C		GS8160E18DGT															100					18 Mbit	2		240 mA, 300 mA	5 ns	Flow-Through/Pipelined	1 M x 18			20 Bit		18 Mbit		Industrial
	Mfr Part No GS8160E18DGT-400	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks	TQFP-100	YES	100	4 ns	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8160E18DGT-400	400 MHz	250@Flow-Through/400@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	70 °C		PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.39	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8160E18DGT	3A991.B.2.B	Pipeline/Flow Through			FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	2.7 V	COMMERCIAL	2.3 V	18 Mbit	2	SYNCHRONOUS	255 mA, 335 mA	4 ns	Flow-Through/Pipelined	1 M x 18	1.6 mm	18	20 Bit	SRAM	18 Mbit	18874368 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm
	Mfr Part No GS8160E18DGT-400I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		10 Weeks	TQFP-100	YES	100	4 ns	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8160E18DGT-400I	400 MHz	250@Flow-Through/400@Pipelined MHz	2.7, 3.6 V	+ 100 C	SDR	2.3, 3 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.39	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS8160E18DGT	3A991.B.2.B	Pipeline/Flow Through	100 °C	-40 °C	FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	2.7 V	INDUSTRIAL	2.3 V	18 Mbit	2	SYNCHRONOUS	275 mA, 355 mA	4 ns	Flow-Through/Pipelined	1 M x 18	1.6 mm	18	20 Bit	SRAM	18 Mbit	18874368 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm	No
	Mfr Part No GS8160E18DGT-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	36		Parallel	GSI Technology		333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	1 MWords													Compliant		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Bulk	GS8160E18DGT		Pipeline/Flow Through	85 °C	0 °C			Memory & Data Storage								100					18 Mbit	2		240 mA, 285 mA	4.5 ns	Flow-Through/Pipelined	1 M x 18			21 Bit	SRAM	18 Mbit		Commercial			SRAM			No