The category is 'Memory'

  • All Manufacturers
  • Access Time
  • Brand
  • Factory Pack QuantityFactory Pack Quantity
  • Interface Type
  • Manufacturer
  • Maximum Clock Frequency
  • Maximum Operating Temperature
  • Memory Size
  • Memory Types
  • Minimum Operating Temperature
  • Mounting Styles
  • Series
  • Series:

    GS8161E18DGT

Image

Part Number

Manufacturer

Datasheet

Availability

Pricing(USD)

Quantity

RoHS

Factory Lead Time

Package / Case

Surface Mount

Number of Terminals

Access Time-Max

Brand

Data Rate Architecture

Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

Interface Type

Manufacturer

Manufacturer Part Number

Maximum Clock Frequency

Maximum Clock Rate

Maximum Operating Supply Voltage

Maximum Operating Temperature

Memory Types

Minimum Operating Supply Voltage

Minimum Operating Temperature

Moisture Sensitive

Mounting

Mounting Styles

Number of I/O Lines

Number of Words

Number of Words Code

Operating Temperature-Max

Operating Temperature-Min

Package Body Material

Package Code

Package Description

Package Shape

Package Style

Part Life Cycle Code

Part Package Code

Reflow Temperature-Max (s)

Risk Rank

RoHS

Rohs Code

Supplier Package

Supply Voltage-Max

Supply Voltage-Min

Supply Voltage-Nom (Vsup)

Timing Type

Tradename

Typical Operating Supply Voltage

Usage Level

Operating Temperature

Packaging

Series

ECCN Code

Type

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Reach Compliance Code

Pin Count

JESD-30 Code

Qualification Status

Supply Voltage-Max (Vsup)

Temperature Grade

Supply Voltage-Min (Vsup)

Memory Size

Number of Ports

Operating Mode

Supply Current-Max

Access Time

Architecture

Organization

Memory Width

Address Bus Width

Product Type

Density

Memory Density

Screening Level

Parallel/Serial

Memory IC Type

Product Category

Radiation Hardening

GS8161E18DGT-150I

Mfr Part No

GS8161E18DGT-150I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

36

Parallel

GSI Technology

150 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

SyncBurst

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

190 mA, 200 mA

7.5 ns

1 M x 18

SRAM

SRAM

GS8161E18DGT-333IV

Mfr Part No

GS8161E18DGT-333IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

2

240 mA, 300 mA

5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

GS8161E18DGT-333I

Mfr Part No

GS8161E18DGT-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

333 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 70 °C

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

GS8161E18DGT-400

Mfr Part No

GS8161E18DGT-400

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

4 ns

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161E18DGT-400

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

70 °C

UNSPECIFIED

QFP

QFP,

RECTANGULAR

FLATPACK

Active

QFP

NOT SPECIFIED

5.42

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8161E18DGT

3A991.B.2.B

DCD Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

compliant

100

R-XQFP-G100

Not Qualified

2.7 V

COMMERCIAL

2.3 V

18 Mbit

2

SYNCHRONOUS

255 mA, 335 mA

4 ns

Flow-Through/Pipelined

1 M x 18

18

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

GS8161E18DGT-400I

Mfr Part No

GS8161E18DGT-400I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

GSI Technology

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161E18DGT-400I

400 MHz

400 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

SMD/SMT

18 Bit

,

Active

5.8

Details

Yes

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 70 °C

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

compliant

100

18 Mbit

275 mA, 355 mA

4

1 M x 18

SRAM

18

Industrial

SRAM

GS8161E18DGT-333

Mfr Part No

GS8161E18DGT-333

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

2

240 mA, 285 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

GS8161E18DGT-250

Mfr Part No

GS8161E18DGT-250

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

36

Parallel

GSI Technology

250 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

SyncBurst

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

18 Mbit

2

210 mA, 230 mA

5.5 ns

1 M x 18

20 b

SRAM

18 Mb

SRAM

No

GS8161E18DGT-150

Mfr Part No

GS8161E18DGT-150

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

36

Parallel

GSI Technology

150 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

SyncBurst

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

170 mA, 180 mA

7.5 ns

1 M x 18

SRAM

SRAM

GS8161E18DGT-200V

Mfr Part No

GS8161E18DGT-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

2

190 mA, 195 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

GS8161E18DGT-150V

Mfr Part No

GS8161E18DGT-150V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

2

160 mA, 180 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

GS8161E18DGT-250IV

Mfr Part No

GS8161E18DGT-250IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Compliant

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Bulk

GS8161E18DGT

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

100

18 Mbit

2

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

No

GS8161E18DGT-250V

Mfr Part No

GS8161E18DGT-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

5.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161E18DGT-250V

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

70 °C

PLASTIC/EPOXY

QFP

QFP,

RECTANGULAR

FLATPACK

Active

QFP

NOT SPECIFIED

5.29

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8161E18DGT

3A991.B.2.B

DCD Pipeline/Flow Through

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

compliant

100

R-PQFP-G100

2 V

COMMERCIAL

1.7 V

18 Mbit

2

SYNCHRONOUS

205 mA, 225 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

18

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

GS8161E18DGT-200IV

Mfr Part No

GS8161E18DGT-200IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

2

210 mA, 215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

GS8161E18DGT-200

Mfr Part No

GS8161E18DGT-200

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161E18DGT-200

200 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

1048576 words

1000000

70 °C

UNSPECIFIED

QFP

QFP,

RECTANGULAR

FLATPACK

Active

QFP

NOT SPECIFIED

5.29

Details

Yes

3.6 V

2.3 V

2.5 V

SyncBurst

Tray

GS8161E18DGT

3A991.B.2.B

DCD Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

compliant

100

R-XQFP-G100

Not Qualified

2.7 V

COMMERCIAL

2.3 V

18 Mbit

SYNCHRONOUS

195 mA, 195 mA

6.5 ns

1 M x 18

18

SRAM

18874368 bit

PARALLEL

CACHE SRAM

SRAM

GS8161E18DGT-150IV

Mfr Part No

GS8161E18DGT-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161E18DGT-150IV

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

QFP

QFP,

RECTANGULAR

FLATPACK

Active

QFP

NOT SPECIFIED

5.29

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS8161E18DGT

3A991.B.2.B

DCD Pipeline/Flow Through

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

compliant

100

R-PQFP-G100

2 V

INDUSTRIAL

1.7 V

18 Mbit

2

SYNCHRONOUS

180 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

18

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

GS8161E18DGT-200I

Mfr Part No

GS8161E18DGT-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

36

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

2

215 mA, 215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

GS8161E18DGT-250I

Mfr Part No

GS8161E18DGT-250I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

36

Parallel

GSI Technology

250 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

SyncBurst

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

230 mA, 250 mA

5.5 ns

1 M x 18

SRAM

SRAM

GS8161E18DGT-333V

Mfr Part No

GS8161E18DGT-333V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Compliant

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Bulk

GS8161E18DGT

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

100

18 Mbit

2

220 mA, 280 mA

5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

No

GS8161E18DGT-375

Mfr Part No

GS8161E18DGT-375

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

36

Parallel

GSI Technology

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

2

250 mA, 320 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM