The category is 'Memory'

  • All Manufacturers
  • Access Time
  • Brand
  • Factory Pack QuantityFactory Pack Quantity
  • Interface Type
  • Manufacturer
  • Maximum Clock Frequency
  • Maximum Operating Temperature
  • Memory Size
  • Memory Types
  • Minimum Operating Temperature
  • Mounting Styles
  • Series
  • Series:

    GS8161E36DD

Image

Part Number

Manufacturer

Datasheet

Availability

Pricing(USD)

Quantity

RoHS

Package / Case

Brand

Data Rate Architecture

Factory Pack QuantityFactory Pack Quantity

Interface Type

Manufacturer

Maximum Clock Frequency

Maximum Clock Rate

Maximum Operating Supply Voltage

Maximum Operating Temperature

Memory Types

Minimum Operating Supply Voltage

Minimum Operating Temperature

Moisture Sensitive

Mounting

Mounting Styles

Number of I/O Lines

Number of Words

RoHS

Supplier Package

Supply Voltage-Max

Supply Voltage-Min

Timing Type

Tradename

Typical Operating Supply Voltage

Usage Level

Operating Temperature

Packaging

Series

Type

Max Operating Temperature

Min Operating Temperature

Subcategory

Pin Count

Memory Size

Number of Ports

Supply Current-Max

Access Time

Architecture

Organization

Address Bus Width

Product Type

Density

Screening Level

Product Category

Radiation Hardening

GS8161E36DD-250V

Mfr Part No

GS8161E36DD-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

GS8161E36DD-250

Mfr Part No

GS8161E36DD-250

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

36

Parallel

GSI Technology

250 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

3.6 V

2.3 V

SyncBurst

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

230 mA, 250 mA

5.5 ns

512 k x 36

SRAM

SRAM

GS8161E36DD-200I

Mfr Part No

GS8161E36DD-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

36

Parallel

GSI Technology

200 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

3.6 V

2.3 V

SyncBurst

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

230 mA

6.5 ns

512 k x 36

SRAM

SRAM

GS8161E36DD-400

Mfr Part No

GS8161E36DD-400

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

GS8161E36DD-150

Mfr Part No

GS8161E36DD-150

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

36

Parallel

GSI Technology

150 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

Compliant

3.6 V

2.3 V

SyncBurst

Bulk

GS8161E36DD

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

18 Mbit

4

180 mA, 190 mA

7.5 ns

512 k x 36

19 b

SRAM

18 Mb

SRAM

No

GS8161E36DD-200

Mfr Part No

GS8161E36DD-200

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

36

Parallel

GSI Technology

200 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

3.6 V

2.3 V

SyncBurst

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

210 mA

6.5 ns

512 k x 36

SRAM

SRAM

GS8161E36DD-150V

Mfr Part No

GS8161E36DD-150V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

GS8161E36DD-200IV

Mfr Part No

GS8161E36DD-200IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

225 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

GS8161E36DD-250I

Mfr Part No

GS8161E36DD-250I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

36

Parallel

GSI Technology

250 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

Compliant

3.6 V

2.3 V

SyncBurst

Bulk

GS8161E36DD

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

18 Mbit

4

250 mA, 270 mA

5.5 ns

512 k x 36

19 b

SRAM

18 Mb

SRAM

No

GS8161E36DD-250IV

Mfr Part No

GS8161E36DD-250IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

Compliant

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Bulk

GS8161E36DD

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

165

18 Mbit

4

245 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

No

GS8161E36DD-150I

Mfr Part No

GS8161E36DD-150I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

36

Parallel

GSI Technology

150 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

Compliant

3.6 V

2.3 V

SyncBurst

Tray

GS8161E36DD

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

18 Mbit

4

200 mA, 210 mA

7.5 ns

512 k x 36

19 b

SRAM

18 Mb

SRAM

No

GS8161E36DD-333IV

Mfr Part No

GS8161E36DD-333IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

260 mA, 330 mA

5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

GS8161E36DD-200V

Mfr Part No

GS8161E36DD-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

205 mA, 210 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

GS8161E36DD-400I

Mfr Part No

GS8161E36DD-400I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

400 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

Compliant

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Bulk

GS8161E36DD

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

165

18 Mbit

4

300 mA, 385 mA

4 ns

Flow-Through/Pipelined

512 k x 36

19 b

SRAM

18 Mbit

Industrial

SRAM

No

GS8161E36DD-375

Mfr Part No

GS8161E36DD-375

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

270 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

GS8161E36DD-333

Mfr Part No

GS8161E36DD-333

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

260 mA, 315 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM