The category is 'Memory'

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  • Series:

    GS8161E36DGT

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Part Number

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Surface Mount

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Factory Pack QuantityFactory Pack Quantity

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Mounting

Mounting Styles

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Number of Words Code

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Radiation Hardening

GS8161E36DGT-200I

Mfr Part No

GS8161E36DGT-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

4.2 ns

GSI Technology

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161E36DGT-200I

200 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

524288 words

512000

85 °C

-40 °C

UNSPECIFIED

QFP

QFP,

RECTANGULAR

FLATPACK

Active

QFP

NOT SPECIFIED

5.64

Details

Yes

3.6 V

2.3 V

2.5 V

SyncBurst

Tray

GS8161E36DGT

3A991.B.2.B

DCD Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

compliant

100

R-XQFP-G100

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

18 Mbit

SYNCHRONOUS

230 mA

6.5 ns

512 k x 36

36

SRAM

18874368 bit

PARALLEL

CACHE SRAM

SRAM

GS8161E36DGT-250IV

Mfr Part No

GS8161E36DGT-250IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

4

245 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

GS8161E36DGT-150I

Mfr Part No

GS8161E36DGT-150I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

36

Parallel

GSI Technology

150 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

SyncBurst

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

200 mA, 210 mA

7.5 ns

512 k x 36

SRAM

SRAM

GS8161E36DGT-250I

Mfr Part No

GS8161E36DGT-250I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

4 ns

GSI Technology

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161E36DGT-250I

250 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

524288 words

512000

85 °C

-40 °C

UNSPECIFIED

QFP

QFP,

RECTANGULAR

FLATPACK

Active

QFP

NOT SPECIFIED

5.35

Details

Yes

3.6 V

2.3 V

2.5 V

SyncBurst

Tray

GS8161E36DGT

3A991.B.2.B

DCD Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

compliant

100

R-XQFP-G100

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

18 Mbit

SYNCHRONOUS

250 mA, 270 mA

5.5 ns

512 k x 36

36

SRAM

18874368 bit

PARALLEL

CACHE SRAM

SRAM

GS8161E36DGT-400I

Mfr Part No

GS8161E36DGT-400I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161E36DGT-400I

400 MHz

400 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

,

Active

5.8

Details

Yes

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 70 °C

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

Memory & Data Storage

compliant

100

18 Mbit

4

300 mA, 385 mA

4 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

GS8161E36DGT-333IV

Mfr Part No

GS8161E36DGT-333IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

4

260 mA, 330 mA

5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

GS8161E36DGT-400

Mfr Part No

GS8161E36DGT-400

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161E36DGT-400

400 MHz

400 MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

,

Active

5.8

Details

Yes

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

Memory & Data Storage

compliant

100

18 Mbit

4

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

GS8161E36DGT-333

Mfr Part No

GS8161E36DGT-333

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

36

Parallel

GSI Technology

333 MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

SMD/SMT

36 Bit

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

1.8, 2.5 V

0 to 70 °C

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

260 mA, 315 mA

5

512 k x 36

19 Bit

SRAM

18

SRAM

GS8161E36DGT-200IV

Mfr Part No

GS8161E36DGT-200IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

200 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

4

225 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

SRAM

18 Mbit

Industrial

SRAM

GS8161E36DGT-150

Mfr Part No

GS8161E36DGT-150

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

36

Parallel

GSI Technology

150 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

SyncBurst

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

180 mA, 190 mA

7.5 ns

512 k x 36

SRAM

SRAM

GS8161E36DGT-150V

Mfr Part No

GS8161E36DGT-150V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

150 MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

100

18 Mbit

4

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

19 b

SRAM

18 Mbit

Commercial

SRAM

No

GS8161E36DGT-200V

Mfr Part No

GS8161E36DGT-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

18

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

SMD/SMT

36 Bit

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

205 mA, 210 mA

6.5@Flow-Through/3@P

512 k x 36

19 Bit

SRAM

18

Commercial

SRAM

GS8161E36DGT-200

Mfr Part No

GS8161E36DGT-200

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

36

Parallel

GSI Technology

200 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

SyncBurst

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

210 mA

6.5 ns

512 k x 36

SRAM

SRAM

GS8161E36DGT-250V

Mfr Part No

GS8161E36DGT-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

5.5 ns

SDR

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161E36DGT-250V

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

1.7, 2.3 V

0 C

Surface Mount

SMD/SMT

36 Bit

512 kWords

512000

70 °C

PLASTIC/EPOXY

QFP

QFP,

RECTANGULAR

FLATPACK

Active

QFP

NOT SPECIFIED

5.64

Compliant

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

1.8, 2.5 V

Commercial grade

0 to 70 °C

Bulk

GS8161E36DGT

3A991.B.2.B

70 °C

0 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

compliant

100

R-PQFP-G100

2 V

COMMERCIAL

1.7 V

18 Mbit

4

SYNCHRONOUS

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

36

19 Bit

18 Mbit

18874368 bit

Commercial

PARALLEL

CACHE SRAM

No

GS8161E36DGT-250

Mfr Part No

GS8161E36DGT-250

GSI Technology Datasheet

2
In Stock

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

4 ns

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161E36DGT-250

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

512000

70 °C

UNSPECIFIED

QFP

QFP,

RECTANGULAR

FLATPACK

Active

QFP

NOT SPECIFIED

5.35

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

0.446083 oz

Commercial grade

0 to 70 °C

Tray

GS8161E36DGT

3A991.B.2.B

DCD Pipeline/Flow Through

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

compliant

100

R-XQFP-G100

Not Qualified

2.7 V

COMMERCIAL

2.3 V

18 Mbit

4

SYNCHRONOUS

230 mA, 250 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

36

19 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

No

GS8161E36DGT-375I

Mfr Part No

GS8161E36DGT-375I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

36

Parallel

GSI Technology

375 MHz

375 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 70 °C

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

4

290 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

GS8161E36DGT-375

Mfr Part No

GS8161E36DGT-375

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

36

Parallel

GSI Technology

375 MHz

375 MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

18 Mbit

4

270 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM