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The category is 'Memory'

Memory (19)

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Series:
GS8321E18AD

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width	Radiation Hardening
	Mfr Part No GS8321E18AD-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		250 MHz		2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords														N		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8321E18AD				DCD Pipeline/Flow Through					Memory & Data Storage								165							36 Mbit	2		215 mA, 255 mA	5.5 ns	Flow-Through/Pipelined	2 M x 18					SRAM	36 Mbit			Commercial					SRAM
	Mfr Part No GS8321E18AD-150IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		150 MHz	133@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords																FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS8321E18AD				Synchronous Burst					Memory & Data Storage								165							36 Mbit	2		205 mA, 220 mA	7.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Industrial					SRAM
	Mfr Part No GS8321E18AD-375I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	4.2 ns	GSI Technology	375 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E18AD-375I	375 MHz		2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.31		No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS8321E18AD	e0	No	3A991.B.2.B	DCD Pipeline/Flow Through	TIN LEAD			IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit	2	SYNCHRONOUS	270 mA, 370 mA	4.2 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.4 mm	18		SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	15 mm	13 mm
	Mfr Part No GS8321E18AD-150I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology			18		Parallel	GSI Technology		150 MHz	133@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		SMD/SMT	18 Bit																	FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V		-40 to 100 °C	Tray	GS8321E18AD				DCD Pipeline/Flow Through					Memory & Data Storage								165							36 Mbit			195 mA, 210 mA	7.5@Flow-Through/3.8		2 M x 18					SRAM			36						SRAM
	Mfr Part No GS8321E18AD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	200 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E18AD-200	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	85 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.31	Compliant	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Bulk	GS8321E18AD	e0	No	3A991.B.2.B	DCD Pipeline/Flow Through	TIN LEAD	85 °C	0 °C	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	OTHER	2.3 V	36 Mbit	2	SYNCHRONOUS	185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.4 mm	18	21 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	15 mm	13 mm	No
	Mfr Part No GS8321E18AD-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		150 MHz		2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords														N		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8321E18AD				DCD Pipeline/Flow Through					Memory & Data Storage								165							36 Mbit	2		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	2 M x 18					SRAM	36 Mbit			Commercial					SRAM
	Mfr Part No GS8321E18AD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	200 MHz		18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E18AD-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		SMD/SMT	18 Bit	2097152 words	2000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.31		No		3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V		-40 to 100 °C	Tray	GS8321E18AD	e0	No	3A991.B.2.B	DCD Pipeline/Flow Through	TIN LEAD			IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit		SYNCHRONOUS	205 mA, 240 mA	6.5@Flow-Through/3@P		2 M x 18	3-STATE	1.4 mm	18		SRAM		0.04 A	36		PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	15 mm	13 mm
	Mfr Part No GS8321E18AD-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords																FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS8321E18AD				DCD Pipeline/Flow Through					Memory & Data Storage								165							36 Mbit	2		235 mA, 275 mA	5.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Industrial					SRAM
	Mfr Part No GS8321E18AD-333IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		333 MHz	200@Flow-Through/333@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords																FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS8321E18AD				Synchronous Burst					Memory & Data Storage								165							36 Mbit	2		265 mA, 350 mA	5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Industrial					SRAM
	Mfr Part No GS8321E18AD-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	4.5 ns	GSI Technology	333 MHz		18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E18AD-333	333 MHz	222@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		SMD/SMT	18 Bit	2097152 words	2000000	85 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.31	N	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V		0 to 85 °C	Tray	GS8321E18AD	e0	No	3A991.B.2.B	DCD Pipeline/Flow Through	TIN LEAD			IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	OTHER	2.3 V	36 Mbit		SYNCHRONOUS	235 mA, 320 mA	4.5@Flow-Through/2.5		2 M x 18	3-STATE	1.4 mm	18		SRAM		0.03 A	36		PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	15 mm	13 mm
	Mfr Part No GS8321E18AD-333V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	5 ns	GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E18AD-333V	333 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	85 °C		PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.81	N	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8321E18AD			3A991.B.2.B	Synchronous Burst		85 °C	0 °C	ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V		OTHER	1.7 V	36 Mbit	2	SYNCHRONOUS	245 mA, 330 mA	5 ns	Flow-Through/Pipelined	2 M x 18		1.4 mm	18	21 b	SRAM	36 Mbit		37748736 bit	Commercial	PARALLEL		CACHE SRAM		SRAM	15 mm	13 mm	No
	Mfr Part No GS8321E18AD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E18AD-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	85 °C		PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.38	N	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8321E18AD			3A991.B.2.B	Synchronous Burst		85 °C	0 °C	ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V		OTHER	1.7 V	36 Mbit	2	SYNCHRONOUS	195 mA, 230 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18		1.4 mm	18	21 Bit	SRAM	36 Mbit		37748736 bit	Commercial	PARALLEL		CACHE SRAM		SRAM	15 mm	13 mm	No
	Mfr Part No GS8321E18AD-333I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		333 MHz	222@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords																FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS8321E18AD				DCD Pipeline/Flow Through					Memory & Data Storage								165							36 Mbit	2		255 mA, 340 mA	4.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Industrial					SRAM
	Mfr Part No GS8321E18AD-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165						SDR			Parallel			250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C		1.7, 2.3 V	- 40 C		Surface Mount	SMD/SMT	18 Bit	2 MWords																FBGA	2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Industrial grade	-40 to 100 °C		GS8321E18AD																	165							36 Mbit	2		245 mA, 285 mA	5.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit		36 Mbit			Industrial
	Mfr Part No GS8321E18AD-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords														N		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8321E18AD				Synchronous Burst					Memory & Data Storage								165							36 Mbit	2		225 mA, 265 mA	5.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Commercial					SRAM
	Mfr Part No GS8321E18AD-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology			18		Parallel	GSI Technology		150 MHz			+ 70 C	SDR		0 C	Yes		SMD/SMT																N			2.7 V	1.7 V			SyncBurst				Tray	GS8321E18AD				Synchronous Burst					Memory & Data Storage															36 Mbit			185 mA, 200 mA	7.5 ns		2 M x 18					SRAM									SRAM
	Mfr Part No GS8321E18AD-375	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	4.2 ns	GSI Technology	375 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E18AD-375	375 MHz	238@Flow-Through/375@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	85 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.31	N	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8321E18AD	e0	No	3A991.B.2.B	DCD Pipeline/Flow Through	TIN LEAD			IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	OTHER	2.3 V	36 Mbit	2	SYNCHRONOUS	250 mA, 350 mA	4.2 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.4 mm	18	21 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	15 mm	13 mm
	Mfr Part No GS8321E18AD-400	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		SDR	18		Parallel	GSI Technology		400 MHz	250@Flow-Through/400@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords														N		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8321E18AD				DCD Pipeline/Flow Through					Memory & Data Storage								165							36 Mbit	2		265 mA, 355 mA	4 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Commercial					SRAM
	Mfr Part No GS8321E18AD-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E18AD-200IV	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000			PLASTIC/EPOXY	LBGA	LBGA,		RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.38	Compliant	No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS8321E18AD			3A991.B.2.B	Synchronous Burst		100 °C	-40 °C	ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V			1.7 V	36 Mbit	2	SYNCHRONOUS	215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18		1.4 mm	18	21 Bit	SRAM	36 Mbit		37748736 bit	Industrial	PARALLEL		CACHE SRAM		SRAM	15 mm	13 mm	No