The category is 'Memory'

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  • Access Time
  • Architecture
  • Data Rate Architecture
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  • Maximum Operating Supply Voltage
  • Maximum Operating Temperature
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  • Minimum Operating Supply Voltage
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  • Series:

    GS8321E18AGD

Image

Part Number

Manufacturer

Datasheet

Availability

Pricing(USD)

Quantity

RoHS

Factory Lead Time

Package / Case

Surface Mount

Number of Terminals

Access Time-Max

Brand

Clock Frequency-Max (fCLK)

Data Rate Architecture

Factory Pack QuantityFactory Pack Quantity

Ihs Manufacturer

Interface Type

Manufacturer

Manufacturer Part Number

Maximum Clock Frequency

Maximum Clock Rate

Maximum Operating Supply Voltage

Maximum Operating Temperature

Memory Types

Minimum Operating Supply Voltage

Minimum Operating Temperature

Moisture Sensitive

Moisture Sensitivity Levels

Mounting

Mounting Styles

Number of I/O Lines

Number of Words

Number of Words Code

Operating Temperature-Max

Operating Temperature-Min

Package Body Material

Package Code

Package Description

Package Equivalence Code

Package Shape

Package Style

Part Life Cycle Code

Part Package Code

Reflow Temperature-Max (s)

Risk Rank

RoHS

Rohs Code

Supplier Package

Supply Voltage-Max

Supply Voltage-Min

Supply Voltage-Nom (Vsup)

Timing Type

Tradename

Typical Operating Supply Voltage

Usage Level

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

ECCN Code

Type

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Terminal Pitch

Reach Compliance Code

Pin Count

JESD-30 Code

Qualification Status

Supply Voltage-Max (Vsup)

Power Supplies

Temperature Grade

Supply Voltage-Min (Vsup)

Memory Size

Number of Ports

Operating Mode

Supply Current-Max

Access Time

Architecture

Organization

Output Characteristics

Seated Height-Max

Memory Width

Address Bus Width

Product Type

Density

Standby Current-Max

Memory Density

Screening Level

Parallel/Serial

I/O Type

Memory IC Type

Standby Voltage-Min

Product Category

Length

Width

Radiation Hardening

GS8321E18AGD-200I

Mfr Part No

GS8321E18AGD-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

200 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

Details

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8321E18AGD

DCD Pipeline/Flow Through

Memory & Data Storage

165

36 Mbit

2

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

SRAM

36 Mbit

Industrial

SRAM

GS8321E18AGD-150

Mfr Part No

GS8321E18AGD-150

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

150 MHz

133@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

Compliant

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Bulk

GS8321E18AGD

DCD Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

165

36 Mbit

2

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

No

GS8321E18AGD-250IV

Mfr Part No

GS8321E18AGD-250IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

Compliant

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Bulk

GS8321E18AGD

Synchronous Burst

100 °C

-40 °C

Memory & Data Storage

165

36 Mbit

2

245 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

No

GS8321E18AGD-200

Mfr Part No

GS8321E18AGD-200

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

200 MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

Details

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS8321E18AGD

DCD Pipeline/Flow Through

Memory & Data Storage

165

36 Mbit

2

185 mA, 220 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

SRAM

36 Mbit

Commercial

SRAM

GS8321E18AGD-150I

Mfr Part No

GS8321E18AGD-150I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

7.5 ns

150 MHz

SDR

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E18AGD-150I

150 MHz

133@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

2.3, 3 V

- 40 C

3

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.31

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

2.5, 3.3 V

Industrial grade

-40 to 100 °C

GS8321E18AGD

e1

Yes

3A991.B.2.B

TIN SILVER COPPER

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

SRAMs

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

195 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

15 mm

13 mm

GS8321E18AGD-250

Mfr Part No

GS8321E18AGD-250

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

Details

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS8321E18AGD

DCD Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

165

36 Mbit

2

215 mA, 255 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mb

Commercial

SRAM

No

GS8321E18AGD-150V

Mfr Part No

GS8321E18AGD-150V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

150 MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

Details

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8321E18AGD

Synchronous Burst

Memory & Data Storage

165

36 Mbit

2

185 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

SRAM

36 Mbit

Commercial

SRAM

GS8321E18AGD-333

Mfr Part No

GS8321E18AGD-333

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

SDR

Parallel

333 MHz

222@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 70 C

2.3, 3 V

0 C

Surface Mount

SMD/SMT

18 Bit

2 MWords

FBGA

3.6 V

2.3 V

Synchronous

2.5, 3.3 V

Commercial grade

0 to 85 °C

GS8321E18AGD

165

36 Mbit

2

235 mA, 320 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

36 Mbit

Commercial

GS8321E18AGD-400

Mfr Part No

GS8321E18AGD-400

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4 ns

GSI Technology

400 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E18AGD-400

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.31

Compliant

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Bulk

GS8321E18AGD

e1

Yes

3A991.B.2.B

DCD Pipeline/Flow Through

TIN SILVER COPPER

85 °C

0 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

OTHER

2.3 V

36 Mbit

2

SYNCHRONOUS

265 mA, 355 mA

4 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

No

GS8321E18AGD-333I

Mfr Part No

GS8321E18AGD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

333 MHz

222@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

Details

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8321E18AGD

DCD Pipeline/Flow Through

Memory & Data Storage

165

36 Mbit

2

255 mA, 340 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

GS8321E18AGD-400I

Mfr Part No

GS8321E18AGD-400I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4 ns

GSI Technology

400 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E18AGD-400I

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.31

Compliant

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Bulk

GS8321E18AGD

e1

Yes

3A991.B.2.B

DCD Pipeline/Flow Through

TIN SILVER COPPER

100 °C

-40 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

285 mA, 375 mA

4 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

No

GS8321E18AGD-333IV

Mfr Part No

GS8321E18AGD-333IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E18AGD-333IV

333 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.73

Details

Yes

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS8321E18AGD

3A991.B.2.B

Synchronous Burst

ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2 V

1.7 V

36 Mbit

2

SYNCHRONOUS

265 mA, 350 mA

5 ns

Flow-Through/Pipelined

2 M x 18

1.4 mm

18

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

15 mm

13 mm

GS8321E18AGD-375

Mfr Part No

GS8321E18AGD-375

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.2 ns

GSI Technology

375 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E18AGD-375

375 MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.31

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS8321E18AGD

e1

Yes

3A991.B.2.B

DCD Pipeline/Flow Through

TIN SILVER COPPER

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

OTHER

2.3 V

36 Mbit

2

SYNCHRONOUS

250 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

GS8321E18AGD-333V

Mfr Part No

GS8321E18AGD-333V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

Details

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8321E18AGD

Synchronous Burst

85 °C

0 °C

Memory & Data Storage

165

36 Mbit

2

245 mA, 330 mA

5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

No

GS8321E18AGD-200V

Mfr Part No

GS8321E18AGD-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E18AGD-200V

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.38

Details

Yes

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8321E18AGD

3A991.B.2.B

Synchronous Burst

85 °C

0 °C

ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2 V

OTHER

1.7 V

36 Mbit

2

SYNCHRONOUS

195 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

1.4 mm

18

21 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

15 mm

13 mm

No

GS8321E18AGD-200IV

Mfr Part No

GS8321E18AGD-200IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

200 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

Details

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS8321E18AGD

Synchronous Burst

Memory & Data Storage

165

36 Mbit

2

215 mA, 250 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

SRAM

36 Mbit

Industrial

SRAM

GS8321E18AGD-150IV

Mfr Part No

GS8321E18AGD-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

150 MHz

133@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

Compliant

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Bulk

GS8321E18AGD

Synchronous Burst

100 °C

-40 °C

Memory & Data Storage

165

36 Mbit

2

205 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mb

Industrial

SRAM

No