The category is 'Memory'

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  • Series:

    GS8321E36AD

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Access Time-Max

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Factory Pack QuantityFactory Pack Quantity

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Manufacturer Part Number

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Minimum Operating Temperature

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Number of Words Code

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Operating Temperature-Min

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Technology

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Product Category

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Width

Radiation Hardening

GS8321E36AD-200

Mfr Part No

GS8321E36AD-200

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

SDR

Parallel

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 70 C

2.3, 3 V

0 C

Surface Mount

SMD/SMT

36 Bit

1 MWords

FBGA

3.6 V

2.3 V

Synchronous

2.5, 3.3 V

Commercial grade

0 to 85 °C

GS8321E36AD

165

36 Mbit

4

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

36 Mbit

Commercial

GS8321E36AD-333

Mfr Part No

GS8321E36AD-333

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.5 ns

GSI Technology

333 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E36AD-333

333 MHz

222@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.31

N

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS8321E36AD

e0

No

3A991.B.2.B

DCD Pipeline/Flow Through

TIN LEAD

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

OTHER

2.3 V

36 Mbit

4

SYNCHRONOUS

260 mA, 345 mA

4.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

GS8321E36AD-250

Mfr Part No

GS8321E36AD-250

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

5.5 ns

250 MHz

SDR

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E36AD-250

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 70 C

2.3, 3 V

0 C

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

4.95

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

2.5, 3.3 V

Commercial grade

0 to 85 °C

GS8321E36AD

e0

No

3A991.B.2.B

TIN LEAD

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

SRAMs

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

OTHER

2.3 V

36 Mbit

4

SYNCHRONOUS

0.26 mA

5.5 ns

Flow-Through/Pipelined

1MX36

3-STATE

1.4 mm

36

20 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

15 mm

13 mm

GS8321E36AD-200I

Mfr Part No

GS8321E36AD-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8321E36AD

DCD Pipeline/Flow Through

Memory & Data Storage

165

36 Mbit

4

225 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

GS8321E36AD-250I

Mfr Part No

GS8321E36AD-250I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8321E36AD

DCD Pipeline/Flow Through

Memory & Data Storage

165

36 Mbit

4

250 mA, 305 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

SRAM

36 Mbit

Industrial

SRAM

GS8321E36AD-250IV

Mfr Part No

GS8321E36AD-250IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS8321E36AD

Synchronous Burst

Memory & Data Storage

165

36 Mbit

4

260 mA, 315 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

GS8321E36AD-375I

Mfr Part No

GS8321E36AD-375I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.2 ns

GSI Technology

375 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E36AD-375I

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.31

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8321E36AD

e0

No

3A991.B.2.B

DCD Pipeline/Flow Through

TIN LEAD

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

290 mA, 400 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

GS8321E36AD-333I

Mfr Part No

GS8321E36AD-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.5 ns

GSI Technology

333 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E36AD-333I

333 MHz

222@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.31

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Bulk

GS8321E36AD

e0

No

3A991.B.2.B

DCD Pipeline/Flow Through

TIN LEAD

100 °C

-40 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

280 mA, 365 mA

4.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

No

GS8321E36AD-250V

Mfr Part No

GS8321E36AD-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

5.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E36AD-250V

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.23

N

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8321E36AD

3A991.B.2.B

Synchronous Burst

ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2 V

OTHER

1.7 V

36 Mbit

4

SYNCHRONOUS

240 mA, 295 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

1.4 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

15 mm

13 mm

GS8321E36AD-200IV

Mfr Part No

GS8321E36AD-200IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS8321E36AD

Synchronous Burst

Memory & Data Storage

165

36 Mbit

4

235 mA, 270 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

GS8321E36AD-333V

Mfr Part No

GS8321E36AD-333V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

5 ns

GSI Technology

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E36AD-333V

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

SMD/SMT

36 Bit

1048576 words

1000000

85 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.81

N

No

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8321E36AD

3A991.B.2.B

Synchronous Burst

ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2 V

OTHER

1.7 V

36 Mbit

SYNCHRONOUS

270 mA, 355 mA

5@Flow-Through/3@Pip

1 M x 36

1.4 mm

36

SRAM

36

Commercial

PARALLEL

CACHE SRAM

SRAM

15 mm

13 mm

GS8321E36AD-200V

Mfr Part No

GS8321E36AD-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E36AD-200V

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.23

N

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8321E36AD

3A991.B.2.B

Synchronous Burst

ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2 V

OTHER

1.7 V

36 Mbit

4

SYNCHRONOUS

215 mA, 250 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

1.4 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

15 mm

13 mm

GS8321E36AD-375

Mfr Part No

GS8321E36AD-375

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.2 ns

GSI Technology

375 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E36AD-375

375 MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.31

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Bulk

GS8321E36AD

e0

No

3A991.B.2.B

DCD Pipeline/Flow Through

TIN LEAD

85 °C

0 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

OTHER

2.3 V

36 Mbit

4

SYNCHRONOUS

270 mA, 380 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 b

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

No

GS8321E36AD-400I

Mfr Part No

GS8321E36AD-400I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4 ns

400 MHz

SDR

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E36AD-400I

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 85 C

2.3, 3 V

- 40 C

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.31

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

2.5, 3.3 V

Industrial grade

-40 to 100 °C

GS8321E36AD

e0

No

3A991.B.2.B

TIN LEAD

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

SRAMs

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

0.37 mA

4 ns

Flow-Through/Pipelined

1MX36

3-STATE

1.4 mm

36

20 Bit

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

15 mm

13 mm

GS8321E36AD-150V

Mfr Part No

GS8321E36AD-150V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

7.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E36AD-150V

150 MHz

133@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.23

N

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8321E36AD

3A991.B.2.B

Synchronous Burst

ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2 V

OTHER

1.7 V

36 Mbit

4

SYNCHRONOUS

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

1.4 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

15 mm

13 mm

GS8321E36AD-150IV

Mfr Part No

GS8321E36AD-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

7.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E36AD-150IV

150 MHz

133@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

PLASTIC/EPOXY

LBGA

LBGA,

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.23

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS8321E36AD

3A991.B.2.B

Synchronous Burst

ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2 V

1.7 V

36 Mbit

4

SYNCHRONOUS

220 mA, 230 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

1.4 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

15 mm

13 mm

GS8321E36AD-333IV

Mfr Part No

GS8321E36AD-333IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-165

GSI Technology

SDR

18

Parallel

GSI Technology

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

Compliant

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS8321E36AD

Synchronous Burst

100 °C

-40 °C

Memory & Data Storage

165

36 Mbit

4

290 mA, 375 mA

5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

No

GS8321E36AD-150I

Mfr Part No

GS8321E36AD-150I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

7.5 ns

GSI Technology

150 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E36AD-150I

150 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.31

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8321E36AD

e0

No

3A991.B.2.B

DCD Pipeline/Flow Through

TIN LEAD

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

210 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm