The category is 'Memory'

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  • Series:

    GS864036GT

Image

Part Number

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Datasheet

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Factory Lead Time

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Surface Mount

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Access Time-Max

Base Product Number

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Factory Pack QuantityFactory Pack Quantity

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Manufacturer Part Number

Maximum Clock Frequency

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Maximum Operating Temperature

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Minimum Operating Supply Voltage

Minimum Operating Temperature

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Moisture Sensitivity Levels

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Number of Words Code

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Operating Temperature-Min

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Width

Radiation Hardening

GS864036GT-200I

Mfr Part No

GS864036GT-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS864036GT-200I

200 MHz

133.3@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.37

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS864036GT

e3

Yes

3A991.B.2.B

Pipeline/Flow Through

PURE MATTE TIN

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

72 Mbit

4

SYNCHRONOUS

250 mA, 330 mA

7.5 ns

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

GS864036GT-250E

Mfr Part No

GS864036GT-250E

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

18

Parallel

250 MHz

+ 125 C

SDR

- 40 C

SMD/SMT

Details

3.6 V

2.3 V

SyncBurst

GS864036GT

Pipeline/Flow Through

72 Mbit

6.5 ns

2 M x 36

GS864036GT-250I

Mfr Part No

GS864036GT-250I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

Surface Mount

TQFP-100

YES

100-TQFP (20x14)

100

6.5 ns

GS864036

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS864036GT-250I

250 MHz

153.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

GSI Technology Inc.

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

85 °C

-40 °C

Tray

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

Active

NOT SPECIFIED

1.77

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS864036GT

e3

Yes

3A991.B.2.B

Pipeline/Flow Through

PURE MATTE TIN

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

72 Mbit

4

SYNCHRONOUS

250 MHz

275 mA, 380 mA

6.5 ns

SRAM

Parallel

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

-

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

2M x 36

20 mm

14 mm

GS864036GT-167I

Mfr Part No

GS864036GT-167I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

9 Weeks, 4 Days

TQFP-100

YES

100

8 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS864036GT-167I

167 MHz

125@Flow-Through/167@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

1.76

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS864036GT

e3

Yes

3A991.B.2.B

Pipeline/Flow Through

PURE MATTE TIN

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

72 Mbit

4

SYNCHRONOUS

240 mA, 290 mA

8 ns

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

GS864036GT-200IV

Mfr Part No

GS864036GT-200IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS864036GT-200IV

200 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.37

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS864036GT

e3

Yes

3A991.B.2.B

Synchronous Burst

Matte Tin (Sn)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2 V

INDUSTRIAL

1.7 V

72 Mbit

4

SYNCHRONOUS

250 mA, 330 mA

7.5 ns

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

21 b

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

No

GS864036GT-167V

Mfr Part No

GS864036GT-167V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

8 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS864036GT-167V

167 MHz

125@Flow-Through/167@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

70 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.37

Compliant

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS864036GT

e3

Yes

3A991.B.2.B

Synchronous Burst

Matte Tin (Sn)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2 V

COMMERCIAL

1.7 V

72 Mbit

4

SYNCHRONOUS

220 mA, 270 mA

8 ns

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

No

GS864036GT-167

Mfr Part No

GS864036GT-167

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

8 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS864036GT-167

167 MHz

125@Flow-Through/167@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

70 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.37

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS864036GT

e3

Yes

3A991.B.2.B

Pipeline/Flow Through

PURE MATTE TIN

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

COMMERCIAL

2.3 V

72 Mbit

4

SYNCHRONOUS

220 mA, 270 mA

8 ns

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

No

GS864036GT-167IV

Mfr Part No

GS864036GT-167IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

Surface Mount

TQFP-100

YES

100-TQFP (20x14)

100

8 ns

GS864036

GSI Technology

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS864036GT-167IV

167 MHz

125@Flow-Through/167@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

GSI Technology Inc.

1.7, 2.3 V

- 40 C

Yes

3

SMD/SMT

36 Bit

2097152 words

2000000

85 °C

-40 °C

Tray

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

Active

NOT SPECIFIED

4.9

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

SyncBurst

1.8, 2.5 V

-40 to 85 °C

Tray

GS864036GT

e3

Yes

3A991.B.2.B

Synchronous Burst

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, Standard

1.7V ~ 2V, 2.3V ~ 2.7V

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2 V

INDUSTRIAL

1.7 V

72 Mbit

SYNCHRONOUS

167 MHz

240 mA, 290 mA

8@Flow-Through/3.5@P

SRAM

Parallel

2 M x 36

1.6 mm

36

-

SRAM

72

PARALLEL

CACHE SRAM

SRAM

2M x 36

20 mm

14 mm

GS864036GT-250IV

Mfr Part No

GS864036GT-250IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS864036GT-250IV

250 MHz

153.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.37

Compliant

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS864036GT

e3

Yes

3A991.B.2.B

Synchronous Burst

Matte Tin (Sn)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2 V

INDUSTRIAL

1.7 V

72 Mbit

4

SYNCHRONOUS

275 mA, 380 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

No

GS864036GT-200V

Mfr Part No

GS864036GT-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

200 MHz

133.3@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

2 MWords

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS864036GT

Synchronous Burst

Memory & Data Storage

100

72 Mbit

4

230 mA, 310 mA

7.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

GS864036GT-300

Mfr Part No

GS864036GT-300

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

300 MHz

181.8@Flow-Through/300@Pipelined MHz

3.6 V

+ 70 C

SDR

3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

2 MWords

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

3.3000 V

Commercial grade

0 to 70 °C

Tray

GS864036GT

Pipeline/Flow Through

Memory & Data Storage

100

72 Mbit

4

300 mA, 420 mA

5.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

GS864036GT-200

Mfr Part No

GS864036GT-200

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS864036GT-200

200 MHz

133.3@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

70 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.37

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS864036GT

e3

Yes

3A991.B.2.B

Pipeline/Flow Through

PURE MATTE TIN

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

COMMERCIAL

2.3 V

72 Mbit

4

SYNCHRONOUS

230 mA, 310 mA

7.5 ns

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

GS864036GT-250

Mfr Part No

GS864036GT-250

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

250 MHz

153.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

2 MWords

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS864036GT

Pipeline/Flow Through

Memory & Data Storage

100

72 Mbit

4

255 mA, 360 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

GS864036GT-250V

Mfr Part No

GS864036GT-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS864036GT-250V

250 MHz

153.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

70 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.37

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS864036GT

e3

Yes

3A991.B.2.B

Synchronous Burst

Matte Tin (Sn)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2 V

COMMERCIAL

1.7 V

72 Mbit

4

SYNCHRONOUS

255 mA, 360 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

No

GS864036GT-300I

Mfr Part No

GS864036GT-300I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

Surface Mount

TQFP-100

100-TQFP (20x14)

GS864036

GSI Technology

SDR

18

Parallel

GSI Technology

300 MHz

181.8@Flow-Through/300@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

GSI Technology Inc.

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

2 MWords

Tray

Active

Compliant

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS864036GT

Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

100

72 Mbit

4

300 MHz

320 mA, 440 mA

5.5 ns

SRAM

Parallel

Flow-Through/Pipelined

2 M x 36

-

21 Bit

SRAM

72 Mbit

Industrial

SRAM

2M x 36

No