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The category is 'Memory'

Memory (14)

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Series:
GS8640E18GT

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	Memory IC Type	Product Category	Length	Width	Radiation Hardening
	Mfr Part No GS8640E18GT-167V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8640E18GT				DCD						Memory & Data Storage								100						72 Mbit	2		195 mA, 240 mA	8 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Commercial			SRAM
	Mfr Part No GS8640E18GT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		250 MHz	153.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8640E18GT				DCD		85 °C	-40 °C			Memory & Data Storage								100						72 Mbit	2		250 mA, 335 mA	6.5 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Industrial			SRAM			No
	Mfr Part No GS8640E18GT-167IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	8 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8640E18GT-167IV	167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.45	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8640E18GT	e3	Yes	3A991.B.2.B	DCD	Matte Tin (Sn)	85 °C	-40 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	INDUSTRIAL	1.7 V	72 Mbit	2	SYNCHRONOUS	215 mA, 260 mA	8 ns	Flow-Through/Pipelined	4 M x 18	1.6 mm	18	22 Bit	SRAM	72 Mbit	75497472 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm	No
	Mfr Part No GS8640E18GT-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		250 MHz	153.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8640E18GT				Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage								100						72 Mbit	2		250 mA, 335 mA	6.5 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Industrial			SRAM			No
	Mfr Part No GS8640E18GT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	133.3@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8640E18GT				DCD						Memory & Data Storage								100						72 Mbit	2		225 mA, 290 mA	7.5 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Industrial			SRAM
	Mfr Part No GS8640E18GT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	133.3@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8640E18GT				Pipeline/Flow Through						Memory & Data Storage								100						72 Mbit	2		205 mA, 270 mA	7.5 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Commercial			SRAM
	Mfr Part No GS8640E18GT-167	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8640E18GT				Pipeline/Flow Through						Memory & Data Storage								100						72 Mbit	2		195 mA, 240 mA	8 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Commercial			SRAM
	Mfr Part No GS8640E18GT-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8640E18GT				Pipeline/Flow Through						Memory & Data Storage								100						72 Mbit	2		215 mA, 260 mA	8 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Industrial			SRAM
	Mfr Part No GS8640E18GT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8640E18GT				DCD						Memory & Data Storage								100						72 Mbit	2		205 mA, 270 mA	7.5 ns	Flow-Through/Pipelined	4 M x 18				SRAM	72 Mbit		Commercial			SRAM
	Mfr Part No GS8640E18GT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		200 MHz	133.3@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8640E18GT				Pipeline/Flow Through						Memory & Data Storage								100						72 Mbit	2		225 mA, 290 mA	7.5 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Industrial			SRAM
	Mfr Part No GS8640E18GT-300I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	5.5 ns		SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS8640E18GT-300I	300 MHz	181.8@Flow-Through/300@Pipelined MHz	3.6 V	+ 85 C		3 V	- 40 C		3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.56		Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous		3.3000 V	Industrial grade	-40 to 85 °C		GS8640E18GT	e3	Yes	3A991.B.2.B		Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41		CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	72 Mbit	2	SYNCHRONOUS	290 mA, 390 mA	5.5 ns	Flow-Through/Pipelined	4MX18	1.6 mm	18	22 Bit		72 Mbit	75497472 bit	Industrial	PARALLEL	CACHE SRAM		20 mm	14 mm
	Mfr Part No GS8640E18GT-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		250 MHz	153.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8640E18GT				DCD		70 °C	0 °C			Memory & Data Storage								100						72 Mbit	2		230 mA, 315 mA	6.5 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Commercial			SRAM			No
	Mfr Part No GS8640E18GT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		18		Parallel	GSI Technology		250 MHz	153.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes			SMD/SMT	18 Bit														Details			3.6 V	2.3 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8640E18GT				Pipeline/Flow Through						Memory & Data Storage								100						72 Mbit			230 mA, 315 mA	6.5@Flow-Through/3@P		4 M x 18				SRAM		72	Commercial			SRAM
	Mfr Part No GS8640E18GT-300	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		300 MHz	181.8@Flow-Through/300@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS8640E18GT				Pipeline/Flow Through						Memory & Data Storage								100						72 Mbit	2		270 mA, 370 mA	5.5 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Commercial			SRAM