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The category is 'Memory'

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Series:
GS864218GB

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	Memory IC Type	Product Category	Length	Width	Radiation Hardening
	Mfr Part No GS864218GB-300I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	5.5 ns	GSI Technology	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS864218GB-300I	300 MHz	181.8@Flow-Through/300@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.17	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS864218GB	e1	Yes	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	72 Mbit	2	SYNCHRONOUS	290 mA, 390 mA	5.5 ns	Flow-Through/Pipelined	4 M x 18	1.99 mm	18	22 Bit	SRAM	72 Mbit	75497472 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	22 mm	14 mm
	Mfr Part No GS864218GB-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119				GSI Technology	SDR	14		Parallel	GSI Technology		250 MHz	153.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Compliant		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS864218GB				SCD/DCD Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage								119						72 Mbit	2		250 mA, 335 mA	6.5 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Industrial			SRAM			No
	Mfr Part No GS864218GB-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	7.5 ns	GSI Technology	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS864218GB-200I	200 MHz	133.3@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.17	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS864218GB	e1	Yes	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	72 Mbit	2	SYNCHRONOUS	225 mA, 290 mA	7.5 ns	Flow-Through/Pipelined	4 M x 18	1.99 mm	18	22 Bit	SRAM	72 Mbit	75497472 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	22 mm	14 mm
	Mfr Part No GS864218GB-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119				GSI Technology	SDR	14		Parallel	GSI Technology		250 MHz	153.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Compliant		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS864218GB				SCD/DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage								119						72 Mbit	2		230 mA, 315 mA	6.5 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Commercial			SRAM			No
	Mfr Part No GS864218GB-167I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119				GSI Technology	SDR	14		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Details		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS864218GB				SCD/DCD Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage								119						72 Mbit	2		215 mA, 260 mA	8 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Industrial			SRAM			No
	Mfr Part No GS864218GB-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119				GSI Technology	SDR	14		Parallel	GSI Technology		250 MHz	153.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS864218GB				SCD/DCD Pipeline/Flow Through						Memory & Data Storage								119						72 Mbit	2		230 mA, 315 mA	6.5 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Commercial			SRAM
	Mfr Part No GS864218GB-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	7.5 ns		SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS864218GB-200IV	200 MHz	133.3@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C		1.7, 2.3 V	- 40 C		3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.17		Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous		1.8, 2.5 V	Industrial grade	-40 to 85 °C		GS864218GB	e1	Yes	3A991.B.2.B		Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41		CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V	INDUSTRIAL	1.7 V	72 Mbit	2	SYNCHRONOUS	225 mA, 290 mA	7.5 ns	Flow-Through/Pipelined	4MX18	1.99 mm	18	22 Bit		72 Mbit	75497472 bit	Industrial	PARALLEL	CACHE SRAM		22 mm	14 mm
	Mfr Part No GS864218GB-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS864218GB-250IV	250 MHz		2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.17	Compliant	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS864218GB	e1	Yes	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	-40 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V	INDUSTRIAL	1.7 V	72 Mbit	2	SYNCHRONOUS	250 mA, 335 mA	6.5 ns	Flow-Through/Pipelined	4 M x 18	1.99 mm	18	22 b	SRAM	72 Mbit	75497472 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	22 mm	14 mm	No
	Mfr Part No GS864218GB-167IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119				GSI Technology	SDR	14		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS864218GB				SCD/DCD Pipeline/Flow Through						Memory & Data Storage								119						72 Mbit	2		215 mA, 260 mA	8 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Industrial			SRAM
	Mfr Part No GS864218GB-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	7.5 ns	GSI Technology		14	GSI TECHNOLOGY	Parallel	GSI Technology	GS864218GB-200V	200 MHz	133.3@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3		SMD/SMT	18 Bit	4194304 words	4000000	70 °C		PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.17	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS864218GB	e1	Yes	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2 V	COMMERCIAL	1.7 V	72 Mbit		SYNCHRONOUS	205 mA, 270 mA	7.5@Flow-Through/3@P		4 M x 18	1.99 mm	18		SRAM		72	Commercial	PARALLEL	CACHE SRAM	SRAM	22 mm	14 mm
	Mfr Part No GS864218GB-300	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	5.5 ns	GSI Technology	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS864218GB-300	300 MHz	181.8@Flow-Through/300@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	70 °C		PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.17	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS864218GB	e1	Yes	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	COMMERCIAL	2.3 V	72 Mbit	2	SYNCHRONOUS	270 mA, 370 mA	5.5 ns	Flow-Through/Pipelined	4 M x 18	1.99 mm	18	22 Bit	SRAM	72 Mbit	75497472 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	22 mm	14 mm
	Mfr Part No GS864218GB-167V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119				GSI Technology	SDR	14		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS864218GB				SCD/DCD Pipeline/Flow Through						Memory & Data Storage								119						72 Mbit	2		195 mA, 240 mA	8 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Commercial			SRAM
	Mfr Part No GS864218GB-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-119	YES	119	7.5 ns	GSI Technology	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS864218GB-200	200 MHz	133.3@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	70 °C		PLASTIC/EPOXY	BGA	BGA,	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.17	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS864218GB	e1	Yes	3A991.B.2.B	SCD/DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	COMMERCIAL	2.3 V	72 Mbit	2	SYNCHRONOUS	205 mA, 270 mA	7.5 ns	Flow-Through/Pipelined	4 M x 18	1.99 mm	18	22 Bit	SRAM	72 Mbit	75497472 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	22 mm	14 mm
	Mfr Part No GS864218GB-167	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-119				GSI Technology	SDR	14		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords													Details		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS864218GB				SCD/DCD Pipeline/Flow Through						Memory & Data Storage								119						72 Mbit	2		195 mA, 240 mA	8 ns	Flow-Through/Pipelined	4 M x 18			22 Bit	SRAM	72 Mbit		Commercial			SRAM