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The category is 'Memory'

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Series:
GS88018CGT

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Mounting Type	Package / Case	Surface Mount	Supplier Device Package	Number of Terminals	Access Time-Max	Base Product Number	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Mfr	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Unit Weight	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Voltage - Supply	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Clock Frequency	Supply Current-Max	Access Time	Memory Format	Memory Interface	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Write Cycle Time - Word, Page	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Memory Organization	Length	Width	Radiation Hardening
	Mfr Part No GS88018CGT-150I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		TQFP-100	YES		100	7.5 ns		GSI Technology	150 MHz		72	GSI TECHNOLOGY	Parallel	GSI Technology	GS88018CGT-150I	150 MHz			+ 85 C	SDR			- 40 C	Yes	3		SMD/SMT		524288 words	512000	85 °C	-40 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	5.3	Details	Yes		3.6 V	2.3 V	2.5 V		SyncBurst					Tray	GS88018CGT	e3	Yes	3A991.B.2.B	Pipeline/Flow Through	PURE MATTE TIN			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	9 Mbit		SYNCHRONOUS		140 mA, 150 mA	7.5 ns				512 k x 18	3-STATE	1.6 mm	18			SRAM		0.045 A	9437184 bit		PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM		20 mm	14 mm
	Mfr Part No GS88018CGT-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				TQFP-100						GSI Technology		SDR	72		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords																Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V		Industrial grade	-40 to 85 °C	Tray	GS88018CGT				Pipeline/Flow Through						Memory & Data Storage									100							9 Mbit	2			165 mA, 200 mA	5.5 ns			Flow-Through/Pipelined	512 k x 18					19 Bit	SRAM	9 Mbit			Industrial					SRAM
	Mfr Part No GS88018CGT-300I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		TQFP-100	YES		100	5 ns		GSI Technology	300 MHz	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS88018CGT-300I	300 MHz	200@Flow-Through/300@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR		2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	85 °C	-40 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	5.3	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V		Industrial grade	-40 to 85 °C	Tray	GS88018CGT	e3	Yes	3A991.B.2.B	Pipeline/Flow Through	PURE MATTE TIN			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	9 Mbit	2	SYNCHRONOUS		170 mA, 225 mA	5 ns			Flow-Through/Pipelined	512 k x 18	3-STATE	1.6 mm	18		19 Bit	SRAM	9 Mbit	0.045 A	9437184 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM		20 mm	14 mm
	Mfr Part No GS88018CGT-300	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		TQFP-100	YES		100	5 ns		GSI Technology	300 MHz	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS88018CGT-300	300 MHz	200@Flow-Through/300@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	70 °C			PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	5.3	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V		Commercial grade	0 to 70 °C	Tray	GS88018CGT	e3	Yes	3A991.B.2.B	Pipeline/Flow Through	PURE MATTE TIN			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	9 Mbit	2	SYNCHRONOUS		150 mA, 205 mA	5 ns			Flow-Through/Pipelined	512 k x 18	3-STATE	1.6 mm	18		19 Bit	SRAM	9 Mbit	0.025 A	9437184 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM		20 mm	14 mm
	Mfr Part No GS88018CGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				TQFP-100						GSI Technology			66		Parallel	GSI Technology		250 MHz	250 MHz	2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes			SMD/SMT	18 Bit																	Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V		Industrial grade	-40 to 85 °C	Tray	GS88018CGT				Synchronous Burst						Memory & Data Storage									100							9 Mbit				145 mA, 185 mA	5.5@Flow-Through/3@P				512 k x 18					19 Bit	SRAM			9	Industrial					SRAM
	Mfr Part No GS88018CGT-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				TQFP-100						GSI Technology		SDR	66		Parallel	GSI Technology		250 MHz	250 MHz	2, 2.7 V	+ 70 C	SDR		1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords																Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V		Commercial grade	0 to 70 °C	Tray	GS88018CGT				Synchronous Burst						Memory & Data Storage									100							9 Mbit	2			125 mA, 165 mA	5.5 ns			Flow-Through/Pipelined	512 k x 18					19 Bit	SRAM	9 Mbit			Commercial					SRAM
	Mfr Part No GS88018CGT-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				TQFP-100						GSI Technology			72		Parallel	GSI Technology		150 MHz			+ 70 C	SDR			0 C	Yes			SMD/SMT																		Details			3.6 V	2.3 V			SyncBurst					Tray	GS88018CGT				Pipeline/Flow Through						Memory & Data Storage																9 Mbit				120 mA, 130 mA	7.5 ns				512 k x 18						SRAM									SRAM
	Mfr Part No GS88018CGT-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				TQFP-100						GSI Technology		SDR	66		Parallel	GSI Technology		150 MHz	150 MHz	2, 2.7 V	+ 70 C	SDR		1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords																Compliant		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V		Commercial grade	0 to 70 °C	Tray	GS88018CGT				Synchronous Burst		70 °C	0 °C			Memory & Data Storage									100							9 Mbit	2			105 mA, 115 mA	7.5 ns			Flow-Through/Pipelined	512 k x 18					19 Bit	SRAM	9 Mbit			Commercial					SRAM				No
	Mfr Part No GS88018CGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		TQFP-100	YES		100	6.5 ns		GSI Technology		SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS88018CGT-200V	200 MHz	200 MHz	2, 2.7 V	+ 70 C	SDR		1.7, 2.3 V	0 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	70 °C			PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	5.3	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V		Commercial grade	0 to 70 °C	Tray	GS88018CGT	e3	Yes	3A991.B.2.B	Synchronous Burst	Matte Tin (Sn)	70 °C	0 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V		COMMERCIAL	1.7 V	9 Mbit	2	SYNCHRONOUS		115 mA, 140 mA	6.5 ns			Flow-Through/Pipelined	512 k x 18		1.6 mm	18		19 Bit	SRAM	9 Mbit		9437184 bit	Commercial	PARALLEL		CACHE SRAM		SRAM		20 mm	14 mm	No
	Mfr Part No GS88018CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		TQFP-100	YES		100	6.5 ns		GSI Technology	200 MHz	SDR	72	GSI TECHNOLOGY	Parallel	GSI Technology	GS88018CGT-200	200 MHz		2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	70 °C			PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	1.7	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	0.417150 oz	Commercial grade	0 to 70 °C	Tray	GS88018CGT	e3	Yes	3A991.B.2.B	Pipeline/Flow Through	PURE MATTE TIN			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	9 Mbit	2	SYNCHRONOUS		130 mA, 155 mA	6.5 ns			Flow-Through/Pipelined	512 k x 18	3-STATE	1.6 mm	18			SRAM	9 Mbit	0.025 A	9437184 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM		20 mm	14 mm
	Mfr Part No GS88018CGT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		TQFP-100	YES		100	5.5 ns		GSI Technology	250 MHz		72	GSI TECHNOLOGY	Parallel	GSI Technology	GS88018CGT-250	250 MHz			+ 70 C	SDR			0 C	Yes	3		SMD/SMT		524288 words	512000	70 °C			PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	5.3	Compliant	Yes		3.6 V	2.3 V	2.5 V		SyncBurst					Tray	GS88018CGT	e3	Yes	3A991.B.2.B	Pipeline/Flow Through	PURE MATTE TIN	70 °C	0 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	9 Mbit	2	SYNCHRONOUS		145 mA, 180 mA	5.5 ns				512 k x 18	3-STATE	1.6 mm	18		19 b	SRAM	9 Mb	0.025 A	9437184 bit		PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM		20 mm	14 mm	No
	Mfr Part No GS88018CGT-150IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		TQFP-100	YES		100	7.5 ns		GSI Technology		SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS88018CGT-150IV	150 MHz	150 MHz	2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	85 °C	-40 °C		PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	5.3	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V		Industrial grade	-40 to 85 °C	Tray	GS88018CGT	e3	Yes	3A991.B.2.B	Synchronous Burst	Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V		INDUSTRIAL	1.7 V	9 Mbit	2	SYNCHRONOUS		125 mA, 135 mA	7.5 ns			Flow-Through/Pipelined	512 k x 18		1.6 mm	18		19 Bit	SRAM	9 Mbit		9437184 bit	Industrial	PARALLEL		CACHE SRAM		SRAM		20 mm	14 mm
	Mfr Part No GS88018CGT-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				TQFP-100						GSI Technology			36		Parallel	GSI Technology		333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR		2.3, 3 V	0 C	Yes			SMD/SMT	18 Bit																	Details		TQFP	3.6 V	2.3 V			SyncBurst	2.5, 3.3 V			0 to 70 °C	Tray	GS88018CGT				Pipeline/Flow Through						Memory & Data Storage									100							9 Mbit				165 mA, 220 mA	4.5@Flow-Through/2.5				512 k x 18					19 Bit	SRAM			9						SRAM
	Mfr Part No GS88018CGT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		TQFP-100	YES		100	6.5 ns		GSI Technology		SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS88018CGT-200IV	200 MHz	200 MHz	2, 2.7 V	+ 85 C	SDR		1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	85 °C	-40 °C		PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		NOT SPECIFIED	5.3	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V		Industrial grade	-40 to 85 °C	Tray	GS88018CGT	e3	Yes	3A991.B.2.B	Synchronous Burst	Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V		INDUSTRIAL	1.7 V	9 Mbit	2	SYNCHRONOUS		125 mA, 160 mA	6.5 ns			Flow-Through/Pipelined	512 k x 18		1.6 mm	18		19 Bit	SRAM	9 Mbit		9437184 bit	Industrial	PARALLEL		CACHE SRAM		SRAM		20 mm	14 mm
	Mfr Part No GS88018CGT-333I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	Surface Mount	TQFP-100	YES	100-TQFP (20x14)	100	4.5 ns	GS88018	GSI Technology	333 MHz	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS88018CGT-333I	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	GSI Technology Inc.	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	85 °C	-40 °C	Tray	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	Active	NOT SPECIFIED	5.26	Compliant	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V		Industrial grade	-40 to 85 °C	Tray	GS88018CGT	e3	Yes	3A991.B.2.B	Pipeline/Flow Through	PURE MATTE TIN	85 °C	-40 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	SRAM - Synchronous, Standard	2.3V ~ 2.7V, 3V ~ 3.6V	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	9 Mbit	2	SYNCHRONOUS	333 MHz	185 mA, 240 mA	4.5 ns	SRAM	Parallel	Flow-Through/Pipelined	512 k x 18	3-STATE	1.6 mm	18	-	19 Bit	SRAM	9 Mbit	0.045 A	9437184 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	512K x 18	20 mm	14 mm	No