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The category is 'Memory'

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Series:
GS880E32CGT

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width	Radiation Hardening
	Mfr Part No GS880E32CGT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		72		Parallel	GSI Technology		250 MHz			+ 70 C	SDR		0 C	Yes			SMD/SMT																Details			3.6 V	2.3 V			SyncBurst				Tray	GS880E32CGT				DCD						Memory & Data Storage															9 Mbit			155 mA, 195 mA	5.5 ns		256 k x 32					SRAM									SRAM
	Mfr Part No GS880E32CGT-150I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		72		Parallel	GSI Technology		150 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT																Details			3.6 V	2.3 V			SyncBurst				Tray	GS880E32CGT				DCD						Memory & Data Storage															9 Mbit			150 mA, 160 mA	7.5 ns		256 k x 32					SRAM									SRAM
	Mfr Part No GS880E32CGT-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	36		Parallel	GSI Technology		333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords														Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS880E32CGT				DCD						Memory & Data Storage								100							9 Mbit	2		180 mA, 240 mA	4.5 ns	Flow-Through/Pipelined	256 k x 32				18 Bit	SRAM	8 Mbit			Commercial					SRAM
	Mfr Part No GS880E32CGT-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	7.5 ns	GSI Technology		66	GSI TECHNOLOGY	Parallel	GSI Technology	GS880E32CGT-150V	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3		SMD/SMT	32 Bit	262144 words	256000	70 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.38	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V		0 to 70 °C	Tray	GS880E32CGT	e3	Yes	3A991.B.2.B	DCD	PURE MATTE TIN			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	1.8/2.5 V	COMMERCIAL	1.7 V	9 Mbit		SYNCHRONOUS	110 mA, 125 mA	7.5@Flow-Through/3.8		256 k x 32	3-STATE	1.6 mm	32		SRAM		0.025 A	8		PARALLEL	COMMON	CACHE SRAM	1.7 V	SRAM	20 mm	14 mm
	Mfr Part No GS880E32CGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology		66	GSI TECHNOLOGY	Parallel	GSI Technology	GS880E32CGT-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3		SMD/SMT	32 Bit	262144 words	256000	70 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.38	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V		0 to 70 °C	Tray	GS880E32CGT	e3	Yes	3A991.B.2.B	DCD	PURE MATTE TIN			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	1.8/2.5 V	COMMERCIAL	1.7 V	9 Mbit		SYNCHRONOUS	125 mA, 150 mA	6.5@Flow-Through/3@P		256 k x 32	3-STATE	1.6 mm	32		SRAM		0.025 A	8		PARALLEL	COMMON	CACHE SRAM	1.7 V	SRAM	20 mm	14 mm
	Mfr Part No GS880E32CGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		66		Parallel	GSI Technology		250 MHz	181.5@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes			SMD/SMT	32 Bit															Details			2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V		-40 to 85 °C	Tray	GS880E32CGT				DCD						Memory & Data Storage								100							9 Mbit			160 mA, 200 mA	5.5@Flow-Through/3@P		256 k x 32					SRAM			8						SRAM
	Mfr Part No GS880E32CGT-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		72		Parallel	GSI Technology		150 MHz			+ 70 C	SDR		0 C	Yes			SMD/SMT																Details			3.6 V	2.3 V			SyncBurst				Tray	GS880E32CGT				DCD						Memory & Data Storage															9 Mbit			130 mA, 140 mA	7.5 ns		256 k x 32					SRAM									SRAM
	Mfr Part No GS880E32CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	72		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords														Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS880E32CGT				DCD						Memory & Data Storage								100							9 Mbit	2		140 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32				18 Bit	SRAM	8 Mbit			Commercial					SRAM
	Mfr Part No GS880E32CGT-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		72		Parallel	GSI Technology		250 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT																Details			3.6 V	2.3 V			SyncBurst				Tray	GS880E32CGT				DCD		85 °C	-40 °C			Memory & Data Storage															9 Mbit	2		175 mA, 215 mA	5.5 ns		256 k x 32				18 b	SRAM	8 Mb								SRAM			No
	Mfr Part No GS880E32CGT-300I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	5 ns	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS880E32CGT-300I	300 MHz	200@Flow-Through/300@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.61	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS880E32CGT	e3	Yes	3A991.B.2.B	DCD	PURE MATTE TIN			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	9 Mbit	2	SYNCHRONOUS	185 mA, 245 mA	5 ns	Flow-Through/Pipelined	256 k x 32	3-STATE	1.6 mm	32	18 Bit	SRAM	8 Mbit	0.045 A	8388608 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	20 mm	14 mm
	Mfr Part No GS880E32CGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		72		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT																Details			3.6 V	2.3 V			SyncBurst				Tray	GS880E32CGT				DCD						Memory & Data Storage															9 Mbit			160 mA, 190 mA	6.5 ns		256 k x 32					SRAM									SRAM
	Mfr Part No GS880E32CGT-300	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	36		Parallel	GSI Technology		300 MHz	200@Flow-Through/300@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords														Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS880E32CGT				DCD						Memory & Data Storage								100							9 Mbit	2		165 mA, 225 mA	5 ns	Flow-Through/Pipelined	256 k x 32				18 Bit	SRAM	8 Mbit			Commercial					SRAM
	Mfr Part No GS880E32CGT-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	5.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS880E32CGT-250V	250 MHz	181.5@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	70 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.38	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS880E32CGT	e3	Yes	3A991.B.2.B	DCD	PURE MATTE TIN			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	1.8/2.5 V	COMMERCIAL	1.7 V	9 Mbit	2	SYNCHRONOUS	140 mA, 180 mA	5.5 ns	Flow-Through/Pipelined	256 k x 32	3-STATE	1.6 mm	32	18 Bit	SRAM	8 Mbit	0.025 A	8388608 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	1.7 V	SRAM	20 mm	14 mm
	Mfr Part No GS880E32CGT-333I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	36		Parallel	GSI Technology		333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords														Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS880E32CGT				DCD						Memory & Data Storage								100							9 Mbit	2		200 mA, 260 mA	4.5 ns	Flow-Through/Pipelined	256 k x 32				18 Bit	SRAM	8 Mbit			Industrial					SRAM
	Mfr Part No GS880E32CGT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords														Compliant		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS880E32CGT				DCD		85 °C	-40 °C			Memory & Data Storage								100							9 Mbit	2		145 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32				18 Bit	SRAM	8 Mbit			Industrial					SRAM			No
	Mfr Part No GS880E32CGT-150IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords														Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS880E32CGT				DCD						Memory & Data Storage								100							9 Mbit	2		130 mA, 145 mA	7.5 ns	Flow-Through/Pipelined	256 k x 32				18 Bit	SRAM	8 Mbit			Industrial					SRAM