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      Home / All Categories / Integrated Circuits (ICs) / Memory /

      The category is 'Memory'

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      • Series:

        GS881E18CD

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      Supply Current-Max

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      Radiation Hardening
      GS881E18CD-250I

      Mfr Part No

      GS881E18CD-250I

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      BGA-165

      GSI Technology

      72

      Parallel

      GSI Technology

      250 MHz

      + 85 C

      SDR

      - 40 C

      Yes

      SMD/SMT

      3.6 V

      2.3 V

      SyncBurst

      Tray

      GS881E18CD

      DCD Pipeline/Flow Through

      Memory & Data Storage

      9 Mbit

      165 mA, 200 mA

      5.5 ns

      512 k x 18

      SRAM

      SRAM

      GS881E18CD-150I

      Mfr Part No

      GS881E18CD-150I

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      BGA-165

      Parallel

      150 MHz

      + 85 C

      - 40 C

      SMD/SMT

      3.6 V

      2.3 V

      GS881E18CD

      9 Mbit

      140 mA, 150 mA

      7.5 ns

      512 k x 18

      GS881E18CD-150

      Mfr Part No

      GS881E18CD-150

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      BGA-165

      Parallel

      150 MHz

      + 70 C

      0 C

      SMD/SMT

      Compliant

      3.6 V

      2.3 V

      GS881E18CD

      70 °C

      0 °C

      9 Mbit

      2

      120 mA, 130 mA

      7.5 ns

      512 k x 18

      18 b

      9 Mb

      No

      GS881E18CD-250V

      Mfr Part No

      GS881E18CD-250V

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      BGA-165

      GSI Technology

      SDR

      66

      Parallel

      GSI Technology

      250 MHz

      181.8@Flow-Through/250@Pipelined MHz

      2, 2.7 V

      + 70 C

      SDR

      1.7, 2.3 V

      0 C

      Yes

      Surface Mount

      SMD/SMT

      18 Bit

      512 kWords

      FBGA

      2.7 V

      1.7 V

      Synchronous

      SyncBurst

      1.8, 2.5 V

      Commercial grade

      0 to 70 °C

      Tray

      GS881E18CD

      DCD Pipeline/Flow Through

      Memory & Data Storage

      165

      9 Mbit

      2

      125 mA, 165 mA

      5.5 ns

      Flow-Through/Pipelined

      512 k x 18

      18 Bit

      SRAM

      9 Mbit

      Commercial

      SRAM

      GS881E18CD-200IV

      Mfr Part No

      GS881E18CD-200IV

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      BGA-165

      GSI Technology

      SDR

      66

      Parallel

      GSI Technology

      200 MHz

      153.8@Flow-Through/200@Pipelined MHz

      2, 2.7 V

      + 85 C

      SDR

      1.7, 2.3 V

      - 40 C

      Yes

      Surface Mount

      SMD/SMT

      18 Bit

      512 kWords

      FBGA

      2.7 V

      1.7 V

      Synchronous

      SyncBurst

      1.8, 2.5 V

      Industrial grade

      -40 to 85 °C

      Tray

      GS881E18CD

      DCD Pipeline/Flow Through

      Memory & Data Storage

      165

      9 Mbit

      2

      125 mA, 160 mA

      6.5 ns

      Flow-Through/Pipelined

      512 k x 18

      18 Bit

      SRAM

      9 Mbit

      Industrial

      SRAM

      GS881E18CD-200V

      Mfr Part No

      GS881E18CD-200V

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      BGA-165

      GSI Technology

      SDR

      66

      Parallel

      GSI Technology

      200 MHz

      153.8@Flow-Through/200@Pipelined MHz

      2, 2.7 V

      + 70 C

      SDR

      1.7, 2.3 V

      0 C

      Yes

      Surface Mount

      SMD/SMT

      18 Bit

      512 kWords

      FBGA

      2.7 V

      1.7 V

      Synchronous

      SyncBurst

      1.8, 2.5 V

      Commercial grade

      0 to 70 °C

      Tray

      GS881E18CD

      DCD Pipeline/Flow Through

      Memory & Data Storage

      165

      9 Mbit

      2

      115 mA, 140 mA

      6.5 ns

      Flow-Through/Pipelined

      512 k x 18

      18 Bit

      SRAM

      9 Mbit

      Commercial

      SRAM

      GS881E18CD-333I

      Mfr Part No

      GS881E18CD-333I

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      BGA-165

      SDR

      Parallel

      333 MHz

      222.2@Flow-Through/333@Pipelined MHz

      2.7, 3.6 V

      + 85 C

      2.3, 3 V

      - 40 C

      Surface Mount

      SMD/SMT

      18 Bit

      512 kWords

      FBGA

      3.6 V

      2.3 V

      Synchronous

      2.5, 3.3 V

      Industrial grade

      -40 to 85 °C

      GS881E18CD

      165

      9 Mbit

      2

      185 mA, 240 mA

      4.5 ns

      Flow-Through/Pipelined

      512 k x 18

      18 Bit

      9 Mbit

      Industrial

      GS881E18CD-150IV

      Mfr Part No

      GS881E18CD-150IV

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      BGA-165

      GSI Technology

      SDR

      66

      Parallel

      GSI Technology

      150 MHz

      133.3@Flow-Through/150@Pipelined MHz

      2, 2.7 V

      + 85 C

      SDR

      1.7, 2.3 V

      - 40 C

      Yes

      Surface Mount

      SMD/SMT

      18 Bit

      512 kWords

      FBGA

      2.7 V

      1.7 V

      Synchronous

      SyncBurst

      1.8, 2.5 V

      Industrial grade

      -40 to 85 °C

      Tray

      GS881E18CD

      DCD Pipeline/Flow Through

      Memory & Data Storage

      165

      9 Mbit

      2

      125 mA, 135 mA

      7.5 ns

      Flow-Through/Pipelined

      512 k x 18

      18 Bit

      SRAM

      9 Mbit

      Industrial

      SRAM

      GS881E18CD-200I

      Mfr Part No

      GS881E18CD-200I

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      BGA-165

      GSI Technology

      72

      Parallel

      GSI Technology

      200 MHz

      + 85 C

      SDR

      - 40 C

      Yes

      SMD/SMT

      3.6 V

      2.3 V

      SyncBurst

      Tray

      GS881E18CD

      DCD Pipeline/Flow Through

      Memory & Data Storage

      9 Mbit

      150 mA, 175 mA

      6.5 ns

      512 k x 18

      SRAM

      SRAM

      GS881E18CD-250IV

      Mfr Part No

      GS881E18CD-250IV

      		GSI Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      BGA-165

      GSI Technology

      SDR

      66

      Parallel

      GSI Technology

      250 MHz

      181.8@Flow-Through/250@Pipelined MHz

      2, 2.7 V

      + 85 C

      SDR

      1.7, 2.3 V

      - 40 C

      Yes

      Surface Mount

      SMD/SMT

      18 Bit

      512 kWords

      Compliant

      FBGA

      2.7 V

      1.7 V

      Synchronous

      SyncBurst

      1.8, 2.5 V

      Industrial grade

      -40 to 85 °C

      Tray

      GS881E18CD

      DCD Pipeline/Flow Through

      85 °C

      -40 °C

      Memory & Data Storage

      165

      9 Mbit

      2

      145 mA, 185 mA

      5.5 ns

      Flow-Through/Pipelined

      512 k x 18

      18 Bit

      SRAM

      9 Mbit

      Industrial

      SRAM

      No