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The category is 'Memory'

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Series:
GS881E32CGD

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	Memory IC Type	Product Category	Length	Width	Radiation Hardening
	Mfr Part No GS881E32CGD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		72		Parallel	GSI Technology		200 MHz			+ 70 C	SDR		0 C	Yes			SMD/SMT															Details			3.6 V	2.3 V			SyncBurst				Tray	GS881E32CGD				DCD Pipeline/Flow Through						Memory & Data Storage														9 Mbit			140 mA, 170 mA	6.5 ns		256 k x 32				SRAM						SRAM
	Mfr Part No GS881E32CGD-150IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	7.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGD-150IV	150 MHz		2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.16	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E32CGD	e1	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	INDUSTRIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	130 mA, 145 mA	7.5 ns	Flow-Through/Pipelined	256 k x 32	1.4 mm	32		SRAM	8 Mbit	8388608 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm
	Mfr Part No GS881E32CGD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords													Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E32CGD				DCD Pipeline/Flow Through						Memory & Data Storage								165						9 Mbit	4		125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32				SRAM	8 Mbit		Commercial			SRAM
	Mfr Part No GS881E32CGD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	72	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGD-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.16	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS881E32CGD	e1	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	9 Mbit	4	SYNCHRONOUS	160 mA, 190 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32	1.4 mm	32	18 Bit	SRAM	8 Mbit	8388608 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm
	Mfr Part No GS881E32CGD-300	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology	SDR	36		Parallel	GSI Technology		300 MHz	200@Flow-Through/300@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords													Compliant		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS881E32CGD				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage								165						9 Mbit	4		165 mA, 225 mA	5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	8 Mbit		Commercial			SRAM			No
	Mfr Part No GS881E32CGD-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	5.5 ns	GSI Technology		72	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGD-250I	250 MHz			+ 85 C	SDR		- 40 C	Yes	3		SMD/SMT		262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.16	Details	Yes		3.6 V	2.3 V	2.5 V		SyncBurst				Tray	GS881E32CGD	e1	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	9 Mbit		SYNCHRONOUS	175 mA, 215 mA	5.5 ns		256 k x 32	1.4 mm	32		SRAM		8388608 bit		PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm
	Mfr Part No GS881E32CGD-150I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	7.5 ns	GSI Technology		72	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGD-150I	150 MHz			+ 85 C	SDR		- 40 C	Yes	3		SMD/SMT		262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.16	Details	Yes		3.6 V	2.3 V	2.5 V		SyncBurst				Tray	GS881E32CGD	e1	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	9 Mbit		SYNCHRONOUS	150 mA, 160 mA	7.5 ns		256 k x 32	1.4 mm	32		SRAM		8388608 bit		PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm
	Mfr Part No GS881E32CGD-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords													Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E32CGD				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage								165						9 Mbit	4		110 mA, 125 mA	7.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	8 Mbit		Commercial			SRAM			No
	Mfr Part No GS881E32CGD-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	7.5 ns	GSI Technology	SDR	72	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGD-150	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	70 °C		PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.16	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS881E32CGD	e1	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	70 °C	0 °C	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	COMMERCIAL	2.3 V	9 Mbit	4	SYNCHRONOUS	130 mA, 140 mA	7.5 ns	Flow-Through/Pipelined	256 k x 32	1.4 mm	32	18 Bit	SRAM	8 Mbit	8388608 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm	No
	Mfr Part No GS881E32CGD-300I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	5 ns	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGD-300I	300 MHz	200@Flow-Through/300@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.16	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS881E32CGD	e1	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	-40 °C	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	9 Mbit	4	SYNCHRONOUS	185 mA, 245 mA	5 ns	Flow-Through/Pipelined	256 k x 32	1.4 mm	32	18 Bit	SRAM	8 Mbit	8388608 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm	No
	Mfr Part No GS881E32CGD-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	5.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGD-250IV	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.16	Compliant	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E32CGD	e1	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	-40 °C	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	INDUSTRIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 32	1.4 mm	32	18 Bit	SRAM	8 Mbit	8388608 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm	No
	Mfr Part No GS881E32CGD-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		36		Parallel	GSI Technology		333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes			SMD/SMT	32 Bit														Compliant			3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V		0 to 70 °C	Tray	GS881E32CGD				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage								165						9 Mbit	4		180 mA, 240 mA	4.5@Flow-Through/2.5		256 k x 32			18 b	SRAM	8 Mb	8				SRAM			No
	Mfr Part No GS881E32CGD-333I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	4.5 ns	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGD-333I	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.16	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS881E32CGD	e1	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	-40 °C	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	9 Mbit	4	SYNCHRONOUS	200 mA, 260 mA	4.5 ns	Flow-Through/Pipelined	256 k x 32	1.4 mm	32	18 Bit	SRAM	8 Mbit	8388608 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm	No
	Mfr Part No GS881E32CGD-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	5.5 ns	GSI Technology		66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGD-250V	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3		SMD/SMT	32 Bit	262144 words	256000	70 °C		PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.16	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E32CGD	e1	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	COMMERCIAL	1.7 V	9 Mbit		SYNCHRONOUS	140 mA, 180 mA	5.5@Flow-Through/3@P		256 k x 32	1.4 mm	32		SRAM		8	Commercial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm
	Mfr Part No GS881E32CGD-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords													Details		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E32CGD				DCD Pipeline/Flow Through						Memory & Data Storage								165						9 Mbit	4		145 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	8 Mbit		Industrial			SRAM