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The category is 'Memory'

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Series:
GS881E32CGT

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	Memory IC Type	Product Category	Length	Width	Radiation Hardening
	Mfr Part No GS881E32CGT-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	7.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGT-150V	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	70 °C		PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.3	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E32CGT	e3	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	Matte Tin (Sn)			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant		100	R-PQFP-G100	Not Qualified	2 V	COMMERCIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	110 mA, 125 mA	7.5 ns	Flow-Through/Pipelined	256 k x 32	1.6 mm	32	18 Bit	SRAM	8 Mbit	8388608 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm
	Mfr Part No GS881E32CGT-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100				GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGT-250V	250 MHz	250 MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords						,			Active			5.8	Details	Yes	TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E32CGT				DCD Pipeline/Flow Through						Memory & Data Storage							compliant		100						9 Mbit	4		140 mA, 180 mA	5.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	9 Mbit		Commercial			SRAM
	Mfr Part No GS881E32CGT-150I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	7.5 ns	GSI Technology	SDR	72	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGT-150I	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.3	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS881E32CGT	e3	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	Matte Tin (Sn)			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant		100	R-PQFP-G100	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	9 Mbit	4	SYNCHRONOUS	150 mA, 160 mA	7.5 ns	Flow-Through/Pipelined	256 k x 32	1.6 mm	32	18 Bit	SRAM	8 Mbit	8388608 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm
	Mfr Part No GS881E32CGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		72		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT															Compliant			3.6 V	2.3 V			SyncBurst				Tray	GS881E32CGT				DCD Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage															9 Mbit	4		160 mA, 190 mA	6.5 ns		256 k x 32			18 b	SRAM	8 Mb					SRAM			No
	Mfr Part No GS881E32CGT-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		72		Parallel	GSI Technology		250 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT															Details			3.6 V	2.3 V			SyncBurst				Tray	GS881E32CGT				DCD Pipeline/Flow Through						Memory & Data Storage															9 Mbit			175 mA, 215 mA	5.5 ns		256 k x 32				SRAM						SRAM
	Mfr Part No GS881E32CGT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology		72		Parallel	GSI Technology		250 MHz			+ 70 C	SDR		0 C	Yes			SMD/SMT															Details			3.6 V	2.3 V			SyncBurst				Tray	GS881E32CGT				DCD Pipeline/Flow Through						Memory & Data Storage															9 Mbit			155 mA, 195 mA	5.5 ns		256 k x 32				SRAM						SRAM
	Mfr Part No GS881E32CGT-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	7.5 ns	GSI Technology		72	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGT-150	150 MHz			+ 70 C	SDR		0 C	Yes	3		SMD/SMT		262144 words	256000	70 °C		PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.3	Compliant	Yes		3.6 V	2.3 V	2.5 V		SyncBurst				Tray	GS881E32CGT	e3	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	Matte Tin (Sn)	70 °C	0 °C	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant		100	R-PQFP-G100	Not Qualified	2.7 V	COMMERCIAL	2.3 V	9 Mbit	4	SYNCHRONOUS	130 mA, 140 mA	7.5 ns		256 k x 32	1.6 mm	32	18 b	SRAM	8 Mb	8388608 bit		PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm	No
	Mfr Part No GS881E32CGT-300I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	5 ns	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGT-300I	300 MHz	200@Flow-Through/300@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.3	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS881E32CGT	e3	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	Matte Tin (Sn)			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant		100	R-PQFP-G100	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	9 Mbit	4	SYNCHRONOUS	185 mA, 245 mA	5 ns	Flow-Through/Pipelined	256 k x 32	1.6 mm	32	18 Bit	SRAM	8 Mbit	8388608 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm
	Mfr Part No GS881E32CGT-300	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	5 ns	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGT-300	300 MHz	200@Flow-Through/300@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	70 °C		PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.3	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS881E32CGT	e3	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	Matte Tin (Sn)			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant		100	R-PQFP-G100	Not Qualified	2.7 V	COMMERCIAL	2.3 V	9 Mbit	4	SYNCHRONOUS	165 mA, 225 mA	5 ns	Flow-Through/Pipelined	256 k x 32	1.6 mm	32	18 Bit	SRAM	8 Mbit	8388608 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm
	Mfr Part No GS881E32CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	72		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords													Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS881E32CGT				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage									100						9 Mbit	4		140 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	8 Mbit		Commercial			SRAM			No
	Mfr Part No GS881E32CGT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords													Compliant		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E32CGT				DCD Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage									100						9 Mbit	4		145 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	8 Mbit		Industrial			SRAM			No
	Mfr Part No GS881E32CGT-333I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	36		Parallel	GSI Technology		333 MHz	333 MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords													Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E32CGT				DCD Pipeline/Flow Through						Memory & Data Storage									100						9 Mbit	4		200 mA, 260 mA	4.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	9 Mbit		Industrial			SRAM
	Mfr Part No GS881E32CGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		250 MHz	250 MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords													Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E32CGT				DCD Pipeline/Flow Through						Memory & Data Storage									100						9 Mbit	4		160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	9 Mbit		Industrial			SRAM
	Mfr Part No GS881E32CGT-150IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	TQFP-100	YES	100	7.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E32CGT-150IV	150 MHz		2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP		5.3	Compliant	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E32CGT	e3	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	Matte Tin (Sn)	85 °C	-40 °C	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	NOT SPECIFIED	100	R-PQFP-G100	Not Qualified	2 V	INDUSTRIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	130 mA, 145 mA	7.5 ns	Flow-Through/Pipelined	256 k x 32	1.6 mm	32	18 b	SRAM	8 Mbit	8388608 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	20 mm	14 mm	No
	Mfr Part No GS881E32CGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords													Compliant		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E32CGT				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage									100						9 Mbit	4		125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	8 Mbit		Commercial			SRAM			No
	Mfr Part No GS881E32CGT-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			TQFP-100				GSI Technology	SDR	36		Parallel	GSI Technology		333 MHz	333 MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords													Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E32CGT				DCD Pipeline/Flow Through						Memory & Data Storage									100						9 Mbit	4		180 mA, 240 mA	4.5 ns	Flow-Through/Pipelined	256 k x 32			18 Bit	SRAM	9 Mbit		Commercial			SRAM