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The category is 'Memory'

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Series:
GS881E36CD

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Memory Density	Screening Level	Parallel/Serial	Memory IC Type	Product Category	Length	Width	Radiation Hardening
	Mfr Part No GS881E36CD-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		72		Parallel	GSI Technology		250 MHz			+ 85 C	SDR		- 40 C	Yes		SMD/SMT																		3.6 V	2.3 V			SyncBurst				Tray	GS881E36CD				DCD Pipeline/Flow Through						Memory & Data Storage														9 Mbit			175 mA, 215 mA	5.5 ns		256 k x 36				SRAM						SRAM
	Mfr Part No GS881E36CD-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	256 kWords															FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E36CD				DCD Pipeline/Flow Through						Memory & Data Storage								165						9 Mbit	4		140 mA, 180 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36			18 Bit	SRAM	9 Mbit		Commercial			SRAM
	Mfr Part No GS881E36CD-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		250 MHz		2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	36 Bit	256 kWords															FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E36CD				DCD Pipeline/Flow Through						Memory & Data Storage								165						9 Mbit	4		160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36				SRAM	9 Mbit		Industrial			SRAM
	Mfr Part No GS881E36CD-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E36CD-200IV	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.15		No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E36CD	e0	No	3A991.B.2.B	DCD Pipeline/Flow Through	TIN LEAD			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	INDUSTRIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	145 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36	1.4 mm	36	18 Bit	SRAM	9 Mbit	9437184 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm
	Mfr Part No GS881E36CD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	72	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E36CD-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.15		No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS881E36CD	e0	No	3A991.B.2.B	DCD Pipeline/Flow Through	Tin/Lead (Sn/Pb)			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	not_compliant	165	R-PBGA-B165	Not Qualified	2.7 V	INDUSTRIAL	2.3 V	9 Mbit	4	SYNCHRONOUS	160 mA, 190 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36	1.4 mm	36	18 Bit	SRAM	9 Mbit	9437184 bit	Industrial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm
	Mfr Part No GS881E36CD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology		72	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E36CD-200	200 MHz			+ 70 C	SDR		0 C	Yes		SMD/SMT		262144 words	256000	70 °C		PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.15	Compliant	No		3.6 V	2.3 V	2.5 V		SyncBurst				Tray	GS881E36CD	e0	No	3A991.B.2.B	DCD Pipeline/Flow Through	Tin/Lead (Sn/Pb)	70 °C	0 °C	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	not_compliant	165	R-PBGA-B165	Not Qualified	2.7 V	COMMERCIAL	2.3 V	9 Mbit	4	SYNCHRONOUS	140 mA, 170 mA	6.5 ns		256 k x 36	1.4 mm	36	18 b	SRAM	9 Mb	9437184 bit		PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm	No
	Mfr Part No GS881E36CD-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881E36CD-200V	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	70 °C		PLASTIC/EPOXY	LBGA	LBGA,	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.15		No	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E36CD	e0	No	3A991.B.2.B	DCD Pipeline/Flow Through	TIN LEAD			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	COMMERCIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	125 mA, 150 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36	1.4 mm	36	18 Bit	SRAM	9 Mbit	9437184 bit	Commercial	PARALLEL	CACHE SRAM	SRAM	15 mm	13 mm
	Mfr Part No GS881E36CD-150I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		72		Parallel	GSI Technology		150 MHz			+ 85 C	SDR		- 40 C	Yes		SMD/SMT															Compliant			3.6 V	2.3 V			SyncBurst				Tray	GS881E36CD				DCD Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage														9 Mbit	4		150 mA, 160 mA	7.5 ns		256 k x 36			18 b	SRAM	9 Mb					SRAM			No
	Mfr Part No GS881E36CD-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology		72		Parallel	GSI Technology		250 MHz			+ 70 C	SDR		0 C	Yes		SMD/SMT																		3.6 V	2.3 V			SyncBurst				Tray	GS881E36CD				DCD Pipeline/Flow Through						Memory & Data Storage														9 Mbit			155 mA, 195 mA	5.5 ns		256 k x 36				SRAM						SRAM
	Mfr Part No GS881E36CD-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology	SDR	36		Parallel	GSI Technology		333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	256 kWords													Compliant		FBGA	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS881E36CD				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage								165						9 Mbit	4		180 mA, 240 mA	4.5 ns	Flow-Through/Pipelined	256 k x 36			18 Bit	SRAM	9 Mbit		Commercial			SRAM			No
	Mfr Part No GS881E36CD-150V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			BGA-165				GSI Technology	SDR	66		Parallel	GSI Technology		150 MHz	133.3@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	Surface Mount	SMD/SMT	36 Bit	256 kWords													Compliant		FBGA	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881E36CD				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage								165						9 Mbit	4		110 mA, 125 mA	7.5 ns	Flow-Through/Pipelined	256 k x 36			18 Bit	SRAM	9 Mbit		Commercial			SRAM			No