The category is 'Memory'

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  • Series:

    GS881E36CGT

Image

Part Number

Manufacturer

Datasheet

Availability

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RoHS

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Data Rate Architecture

Factory Pack QuantityFactory Pack Quantity

Interface Type

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Maximum Clock Frequency

Maximum Clock Rate

Maximum Operating Supply Voltage

Maximum Operating Temperature

Memory Types

Minimum Operating Supply Voltage

Minimum Operating Temperature

Moisture Sensitive

Mounting

Mounting Styles

Number of I/O Lines

Number of Words

RoHS

Supplier Package

Supply Voltage-Max

Supply Voltage-Min

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Max Operating Temperature

Min Operating Temperature

Subcategory

Pin Count

Memory Size

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Supply Current-Max

Access Time

Architecture

Organization

Address Bus Width

Product Type

Density

Memory Density

Screening Level

Product Category

Radiation Hardening

GS881E36CGT-333

Mfr Part No

GS881E36CGT-333

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

9 Mbit

4

180 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

GS881E36CGT-250I

Mfr Part No

GS881E36CGT-250I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

72

Parallel

GSI Technology

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

Compliant

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

100

9 Mbit

4

175 mA, 215 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

No

GS881E36CGT-300

Mfr Part No

GS881E36CGT-300

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

36

Parallel

GSI Technology

300 MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

100

9 Mbit

4

165 mA, 225 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 b

SRAM

9 Mbit

Commercial

SRAM

No

GS881E36CGT-150I

Mfr Part No

GS881E36CGT-150I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

72

Parallel

GSI Technology

150 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

SyncBurst

Tray

GS881E36CGT

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

4

150 mA, 160 mA

7.5 ns

256 k x 36

18 b

SRAM

9 Mb

SRAM

No

GS881E36CGT-150

Mfr Part No

GS881E36CGT-150

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

72

Parallel

GSI Technology

150 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

SyncBurst

Tray

GS881E36CGT

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

130 mA, 140 mA

7.5 ns

256 k x 36

SRAM

SRAM

GS881E36CGT-200

Mfr Part No

GS881E36CGT-200

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

72

Parallel

GSI Technology

200 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

Compliant

3.6 V

2.3 V

SyncBurst

Tray

GS881E36CGT

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

4

140 mA, 170 mA

6.5 ns

256 k x 36

18 b

SRAM

9 Mb

SRAM

No

GS881E36CGT-300I

Mfr Part No

GS881E36CGT-300I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

36

Parallel

GSI Technology

300 MHz

200@Flow-Through/300@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

Compliant

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

100

9 Mbit

4

185 mA, 245 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

No

GS881E36CGT-250

Mfr Part No

GS881E36CGT-250

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

72

Parallel

GSI Technology

250 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

SyncBurst

Tray

GS881E36CGT

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

155 mA, 195 mA

5.5 ns

256 k x 36

SRAM

SRAM

GS881E36CGT-200I

Mfr Part No

GS881E36CGT-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

72

Parallel

GSI Technology

200 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

SyncBurst

Tray

GS881E36CGT

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

4

160 mA, 190 mA

6.5 ns

256 k x 36

18 b

SRAM

9 Mb

SRAM

No

GS881E36CGT-250IV

Mfr Part No

GS881E36CGT-250IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

66

Parallel

GSI Technology

250 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

Compliant

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

100

9 Mbit

4

160 mA, 200 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

18 b

SRAM

9 Mbit

Industrial

SRAM

No

GS881E36CGT-150V

Mfr Part No

GS881E36CGT-150V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

66

Parallel

GSI Technology

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

100

9 Mbit

4

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

No

GS881E36CGT-150IV

Mfr Part No

GS881E36CGT-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

66

Parallel

GSI Technology

150 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

Compliant

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

100

9 Mbit

4

130 mA, 145 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

18 b

SRAM

9 Mbit

Industrial

SRAM

No

GS881E36CGT-200IV

Mfr Part No

GS881E36CGT-200IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

66

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

9 Mbit

4

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

GS881E36CGT-250V

Mfr Part No

GS881E36CGT-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

66

Parallel

GSI Technology

250 MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

SMD/SMT

36 Bit

Details

TQFP

2.7 V

1.7 V

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

Memory & Data Storage

100

9 Mbit

140 mA, 180 mA

5.5@Flow-Through/3@P

256 k x 36

SRAM

9

Commercial

SRAM

GS881E36CGT-333I

Mfr Part No

GS881E36CGT-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

36

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

100

9 Mbit

4

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

No

GS881E36CGT-200V

Mfr Part No

GS881E36CGT-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

66

Parallel

GSI Technology

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

100

9 Mbit

4

125 mA, 150 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

No