The category is 'Memory'

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  • Series:

    GS88236CB

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Radiation Hardening

GS88236CB-200I

Mfr Part No

GS88236CB-200I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

119

6.5 ns

GSI Technology

42

GSI TECHNOLOGY

Parallel

GSI Technology

GS88236CB-200I

200 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

262144 words

256000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

No

3.6 V

2.3 V

2.5 V

SyncBurst

Tray

GS88236CB

e0

No

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

9 Mbit

SYNCHRONOUS

160 mA, 190 mA

6.5 ns

256 k x 36

1.77 mm

36

SRAM

9437184 bit

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

GS88236CB-250

Mfr Part No

GS88236CB-250

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

5.5 ns

GSI Technology

42

GSI TECHNOLOGY

Parallel

GSI Technology

GS88236CB-250

250 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

262144 words

256000

70 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

N

No

3.6 V

2.3 V

2.5 V

SyncBurst

Tray

GS88236CB

e0

No

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

COMMERCIAL

2.3 V

9 Mbit

SYNCHRONOUS

155 mA, 195 mA

5.5 ns

256 k x 36

1.77 mm

36

SRAM

9437184 bit

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

GS88236CB-250I

Mfr Part No

GS88236CB-250I

GSI Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

Polyurethane

119

5.5 ns

GSI Technology

42

GSI TECHNOLOGY

Parallel

Dwyer Instruments

A-3025-3

250 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

262144 words

256000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

No

No

3.6 V

2.3 V

2.5 V

SyncBurst

Tray

GS88236CB

e0

No

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

9 Mbit

SYNCHRONOUS

175 mA, 215 mA

5.5 ns

256 k x 36

1.77 mm

36

SRAM

9437184 bit

PARALLEL

CACHE SRAM

Female to Female Coupling

SRAM

22 mm

14 mm

GS88236CB-200

Mfr Part No

GS88236CB-200

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

6.5 ns

GSI Technology

42

GSI TECHNOLOGY

Parallel

GSI Technology

GS88236CB-200

200 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

262144 words

256000

70 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

N

No

3.6 V

2.3 V

2.5 V

SyncBurst

Tray

GS88236CB

e0

No

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

COMMERCIAL

2.3 V

9 Mbit

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

256 k x 36

1.77 mm

36

SRAM

9437184 bit

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

GS88236CB-150

Mfr Part No

GS88236CB-150

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

42

Parallel

GSI Technology

150 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

N

3.6 V

2.3 V

SyncBurst

Tray

GS88236CB

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

130 mA, 140 mA

7.5 ns

256 k x 36

SRAM

SRAM

GS88236CB-200V

Mfr Part No

GS88236CB-200V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

6.5 ns

GSI Technology

SDR

42

GSI TECHNOLOGY

Parallel

GSI Technology

GS88236CB-200V

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

70 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

N

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS88236CB

e0

No

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2 V

COMMERCIAL

1.7 V

9 Mbit

4

SYNCHRONOUS

125 mA, 150 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

1.77 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

GS88236CB-150V

Mfr Part No

GS88236CB-150V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

42

Parallel

GSI Technology

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

N

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS88236CB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

119

9 Mbit

4

110 mA, 125 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

GS88236CB-200IV

Mfr Part No

GS88236CB-200IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

6.5 ns

GSI Technology

SDR

42

GSI TECHNOLOGY

Parallel

GSI Technology

GS88236CB-200IV

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS88236CB

e0

No

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2 V

INDUSTRIAL

1.7 V

9 Mbit

4

SYNCHRONOUS

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

1.77 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

GS88236CB-333

Mfr Part No

GS88236CB-333

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

42

Parallel

GSI Technology

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

N

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS88236CB

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

119

9 Mbit

4

180 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

No

GS88236CB-250IV

Mfr Part No

GS88236CB-250IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

5.5 ns

GSI Technology

SDR

42

GSI TECHNOLOGY

Parallel

GSI Technology

GS88236CB-250IV

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

Compliant

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS88236CB

e0

No

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2 V

INDUSTRIAL

1.7 V

9 Mbit

4

SYNCHRONOUS

160 mA, 200 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

1.77 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

No

GS88236CB-333I

Mfr Part No

GS88236CB-333I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

4.5 ns

GSI Technology

SDR

42

GSI TECHNOLOGY

Parallel

GSI Technology

GS88236CB-333I

333 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS88236CB

e0

No

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

-40 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

9 Mbit

4

SYNCHRONOUS

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

1.77 mm

36

18 b

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

No

GS88236CB-150IV

Mfr Part No

GS88236CB-150IV

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

42

Parallel

GSI Technology

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

FBGA

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS88236CB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

119

9 Mbit

4

130 mA, 145 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

GS88236CB-300

Mfr Part No

GS88236CB-300

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

42

Parallel

GSI Technology

300 MHz

200@Flow-Through/300@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

N

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS88236CB

Pipeline/Flow Through

Memory & Data Storage

119

9 Mbit

4

165 mA, 225 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

GS88236CB-250V

Mfr Part No

GS88236CB-250V

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

5.5 ns

GSI Technology

SDR

42

GSI TECHNOLOGY

Parallel

GSI Technology

GS88236CB-250V

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

70 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

N

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 70 °C

Tray

GS88236CB

e0

No

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2 V

COMMERCIAL

1.7 V

9 Mbit

4

SYNCHRONOUS

140 mA, 180 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

1.77 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

GS88236CB-300M

Mfr Part No

GS88236CB-300M

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

42

Parallel

GSI Technology

300 MHz

200@Flow-Through/300@Pipelined MHz

2.7, 3.6 V

+ 125 C

SDR

2.3, 3 V

- 55 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Military grade

-55 to 125 °C

Tray

GS88236CB

Pipeline/Flow Through

Memory & Data Storage

119

9 Mbit

4

220 mA, 280 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Military

SRAM

GS88236CB-300I

Mfr Part No

GS88236CB-300I

GSI Technology Datasheet

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

42

Parallel

GSI Technology

300 MHz

200@Flow-Through/300@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

256 kWords

Compliant

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS88236CB

Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

119

9 Mbit

4

185 mA, 245 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

No