The category is 'Memory'
Memory (16)
- All Manufacturers
- Access Time
- Brand
- Factory Pack QuantityFactory Pack Quantity
- Interface Type
- Manufacturer
- Maximum Clock Frequency
- Maximum Operating Temperature
- Memory Size
- Memory Types
- Minimum Operating Temperature
- Mounting Styles
- Series
- Series:
GS88236CB
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Package / Case | Surface Mount | Body Material | Number of Terminals | Access Time-Max | Brand | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Memory Density | Screening Level | Parallel/Serial | Memory IC Type | Connection Type | Product Category | Length | Width | Radiation Hardening |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr Part No GS88236CB-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 119 | 6.5 ns | GSI Technology | 42 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88236CB-200I | 200 MHz | + 85 C | SDR | - 40 C | Yes | SMD/SMT | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.13 | No | 3.6 V | 2.3 V | 2.5 V | SyncBurst | Tray | GS88236CB | e0 | No | 3A991.B.2.B | Pipeline/Flow Through | Tin/Lead (Sn/Pb) | PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 9 Mbit | SYNCHRONOUS | 160 mA, 190 mA | 6.5 ns | 256 k x 36 | 1.77 mm | 36 | SRAM | 9437184 bit | PARALLEL | CACHE SRAM | SRAM | 22 mm | 14 mm | |||||||||||||||||||||||
![]() | Mfr Part No GS88236CB-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 5.5 ns | GSI Technology | 42 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88236CB-250 | 250 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.13 | N | No | 3.6 V | 2.3 V | 2.5 V | SyncBurst | Tray | GS88236CB | e0 | No | 3A991.B.2.B | Pipeline/Flow Through | Tin/Lead (Sn/Pb) | PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 9 Mbit | SYNCHRONOUS | 155 mA, 195 mA | 5.5 ns | 256 k x 36 | 1.77 mm | 36 | SRAM | 9437184 bit | PARALLEL | CACHE SRAM | SRAM | 22 mm | 14 mm | |||||||||||||||||||||||
![]() | Mfr Part No GS88236CB-250I | GSI | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | Polyurethane | 119 | 5.5 ns | GSI Technology | 42 | GSI TECHNOLOGY | Parallel | Dwyer Instruments | A-3025-3 | 250 MHz | + 85 C | SDR | - 40 C | Yes | SMD/SMT | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.13 | No | No | 3.6 V | 2.3 V | 2.5 V | SyncBurst | Tray | GS88236CB | e0 | No | 3A991.B.2.B | Pipeline/Flow Through | Tin/Lead (Sn/Pb) | PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 9 Mbit | SYNCHRONOUS | 175 mA, 215 mA | 5.5 ns | 256 k x 36 | 1.77 mm | 36 | SRAM | 9437184 bit | PARALLEL | CACHE SRAM | Female to Female Coupling | SRAM | 22 mm | 14 mm | ||||||||||||||||||||
![]() | Mfr Part No GS88236CB-200 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 6.5 ns | GSI Technology | 42 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88236CB-200 | 200 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.13 | N | No | 3.6 V | 2.3 V | 2.5 V | SyncBurst | Tray | GS88236CB | e0 | No | 3A991.B.2.B | Pipeline/Flow Through | Tin/Lead (Sn/Pb) | PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 9 Mbit | SYNCHRONOUS | 140 mA, 170 mA | 6.5 ns | 256 k x 36 | 1.77 mm | 36 | SRAM | 9437184 bit | PARALLEL | CACHE SRAM | SRAM | 22 mm | 14 mm | |||||||||||||||||||||||
![]() | Mfr Part No GS88236CB-150 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | 42 | Parallel | GSI Technology | 150 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | N | 3.6 V | 2.3 V | SyncBurst | Tray | GS88236CB | Pipeline/Flow Through | Memory & Data Storage | 9 Mbit | 130 mA, 140 mA | 7.5 ns | 256 k x 36 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS88236CB-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 6.5 ns | GSI Technology | SDR | 42 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88236CB-200V | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | 256000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.13 | N | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS88236CB | e0 | No | 3A991.B.2.B | SCD/DCD Pipeline/Flow Through | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | COMMERCIAL | 1.7 V | 9 Mbit | 4 | SYNCHRONOUS | 125 mA, 150 mA | 6.5 ns | Flow-Through/Pipelined | 256 k x 36 | 1.77 mm | 36 | 18 Bit | SRAM | 9 Mbit | 9437184 bit | Commercial | PARALLEL | CACHE SRAM | SRAM | 22 mm | 14 mm | |||||||
![]() | Mfr Part No GS88236CB-150V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 42 | Parallel | GSI Technology | 150 MHz | 133.3@Flow-Through/150@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | N | FBGA | 2.7 V | 1.7 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS88236CB | SCD/DCD Pipeline/Flow Through | Memory & Data Storage | 119 | 9 Mbit | 4 | 110 mA, 125 mA | 7.5 ns | Flow-Through/Pipelined | 256 k x 36 | 18 Bit | SRAM | 9 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS88236CB-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 6.5 ns | GSI Technology | SDR | 42 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88236CB-200IV | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.13 | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS88236CB | e0 | No | 3A991.B.2.B | SCD/DCD Pipeline/Flow Through | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | INDUSTRIAL | 1.7 V | 9 Mbit | 4 | SYNCHRONOUS | 145 mA, 170 mA | 6.5 ns | Flow-Through/Pipelined | 256 k x 36 | 1.77 mm | 36 | 18 Bit | SRAM | 9 Mbit | 9437184 bit | Industrial | PARALLEL | CACHE SRAM | SRAM | 22 mm | 14 mm | |||||||
![]() | Mfr Part No GS88236CB-333 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 42 | Parallel | GSI Technology | 333 MHz | 222.2@Flow-Through/333@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | N | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS88236CB | Pipeline/Flow Through | 70 °C | 0 °C | Memory & Data Storage | 119 | 9 Mbit | 4 | 180 mA, 240 mA | 4.5 ns | Flow-Through/Pipelined | 256 k x 36 | 18 Bit | SRAM | 9 Mbit | Commercial | SRAM | No | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS88236CB-250IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 5.5 ns | GSI Technology | SDR | 42 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88236CB-250IV | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.13 | Compliant | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS88236CB | e0 | No | 3A991.B.2.B | SCD/DCD Pipeline/Flow Through | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | INDUSTRIAL | 1.7 V | 9 Mbit | 4 | SYNCHRONOUS | 160 mA, 200 mA | 5.5 ns | Flow-Through/Pipelined | 256 k x 36 | 1.77 mm | 36 | 18 Bit | SRAM | 9 Mbit | 9437184 bit | Industrial | PARALLEL | CACHE SRAM | SRAM | 22 mm | 14 mm | No | |||
![]() | Mfr Part No GS88236CB-333I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 4.5 ns | GSI Technology | SDR | 42 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88236CB-333I | 333 MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.13 | Compliant | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS88236CB | e0 | No | 3A991.B.2.B | Pipeline/Flow Through | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 9 Mbit | 4 | SYNCHRONOUS | 200 mA, 260 mA | 4.5 ns | Flow-Through/Pipelined | 256 k x 36 | 1.77 mm | 36 | 18 b | SRAM | 9 Mbit | 9437184 bit | Industrial | PARALLEL | CACHE SRAM | SRAM | 22 mm | 14 mm | No | ||||
![]() | Mfr Part No GS88236CB-150IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 42 | Parallel | GSI Technology | 150 MHz | 133.3@Flow-Through/150@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | FBGA | 2.7 V | 1.7 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS88236CB | SCD/DCD Pipeline/Flow Through | Memory & Data Storage | 119 | 9 Mbit | 4 | 130 mA, 145 mA | 7.5 ns | Flow-Through/Pipelined | 256 k x 36 | 18 Bit | SRAM | 9 Mbit | Industrial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS88236CB-300 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 42 | Parallel | GSI Technology | 300 MHz | 200@Flow-Through/300@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | N | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS88236CB | Pipeline/Flow Through | Memory & Data Storage | 119 | 9 Mbit | 4 | 165 mA, 225 mA | 5 ns | Flow-Through/Pipelined | 256 k x 36 | 18 Bit | SRAM | 9 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS88236CB-250V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 5.5 ns | GSI Technology | SDR | 42 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88236CB-250V | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | 256000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.13 | N | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS88236CB | e0 | No | 3A991.B.2.B | SCD/DCD Pipeline/Flow Through | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | COMMERCIAL | 1.7 V | 9 Mbit | 4 | SYNCHRONOUS | 140 mA, 180 mA | 5.5 ns | Flow-Through/Pipelined | 256 k x 36 | 1.77 mm | 36 | 18 Bit | SRAM | 9 Mbit | 9437184 bit | Commercial | PARALLEL | CACHE SRAM | SRAM | 22 mm | 14 mm | |||||||
![]() | Mfr Part No GS88236CB-300M | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 42 | Parallel | GSI Technology | 300 MHz | 200@Flow-Through/300@Pipelined MHz | 2.7, 3.6 V | + 125 C | SDR | 2.3, 3 V | - 55 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Military grade | -55 to 125 °C | Tray | GS88236CB | Pipeline/Flow Through | Memory & Data Storage | 119 | 9 Mbit | 4 | 220 mA, 280 mA | 5 ns | Flow-Through/Pipelined | 256 k x 36 | 18 Bit | SRAM | 9 Mbit | Military | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS88236CB-300I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 42 | Parallel | GSI Technology | 300 MHz | 200@Flow-Through/300@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | Compliant | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS88236CB | Pipeline/Flow Through | 85 °C | -40 °C | Memory & Data Storage | 119 | 9 Mbit | 4 | 185 mA, 245 mA | 5 ns | Flow-Through/Pipelined | 256 k x 36 | 18 Bit | SRAM | 9 Mbit | Industrial | SRAM | No |
GS88236CB-200I
GSI Technology
Package:Memory
Price: please inquire
GS88236CB-250
GSI Technology
Package:Memory
Price: please inquire
GS88236CB-250I
GSI
Package:Memory
Price: please inquire
GS88236CB-200
GSI Technology
Package:Memory
Price: please inquire
GS88236CB-150
GSI Technology
Package:Memory
Price: please inquire
GS88236CB-200V
GSI Technology
Package:Memory
Price: please inquire
GS88236CB-150V
GSI Technology
Package:Memory
Price: please inquire
GS88236CB-200IV
GSI Technology
Package:Memory
Price: please inquire
GS88236CB-333
GSI Technology
Package:Memory
Price: please inquire
GS88236CB-250IV
GSI Technology
Package:Memory
Price: please inquire
GS88236CB-333I
GSI Technology
Package:Memory
Price: please inquire
GS88236CB-150IV
GSI Technology
Package:Memory
Price: please inquire
GS88236CB-300
GSI Technology
Package:Memory
Price: please inquire
GS88236CB-250V
GSI Technology
Package:Memory
Price: please inquire
GS88236CB-300M
GSI Technology
Package:Memory
Price: please inquire
GS88236CB-300I
GSI Technology
Package:Memory
Price: please inquire
