The category is 'Memory'
Memory (4)
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- Absolute Pull Range (APR)
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- Series:
SiT8209
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Mfr | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Shape | Package Style | Part Life Cycle Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Supply Voltage-Nom (Vsup) | Operating Temperature | Packaging | Series | Size / Dimension | Part Status | ECCN Code | Type | Additional Feature | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Frequency Stability | Output | JESD-30 Code | Function | Base Resonator | Current - Supply (Max) | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Current - Supply (Disable) (Max) | Memory Size | Operating Mode | Spread Spectrum Bandwidth | Memory Format | Memory Interface | Organization | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Memory Density | Parallel/Serial | Memory IC Type | Absolute Pull Range (APR) | Height Seated (Max) | Length | Width | Ratings |
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 | Mfr Part No NS32082D-10N | National Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 4-SMD, No Lead | SiTime | Strip | Active | -20°C ~ 70°C | SiT8209 | 0.197 L x 0.126 W (5.00mm x 3.20mm) | XO (Standard) | 3.3V | 166.666666 MHz | ±50ppm | LVCMOS, LVTTL | Standby (Power Down) | MEMS | 36mA | - | - | 0.031 (0.80mm) | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT24C04DXHMB | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 4-SMD, No Lead | SiTime | Strip | Active | -40°C ~ 85°C | SiT8209 | 0.126 L x 0.098 W (3.20mm x 2.50mm) | XO (Standard) | 1.8V | 212.5 MHz | ±50ppm | LVCMOS, LVTTL | Enable/Disable | MEMS | 33mA | - | - | 0.031 (0.80mm) | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS84018CB-200IT | GSI | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | Surface Mount | 4-SMD, No Lead | YES | 119 | GSI TECHNOLOGY | GSI Technology | GS84018CB-200IT | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | NOT SPECIFIED | 5.72 | No | 2.5 V | -20°C ~ 70°C | Tape & Reel (TR) | SiT8209 | 0.197 L x 0.126 W (5.00mm x 3.20mm) | Active | 3A991.B.2.B | XO (Standard) | IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE | CMOS | 2.5V | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 100MHz | ±10ppm | LVCMOS, LVTTL | R-PBGA-B119 | Standby (Power Down) | MEMS | 36mA | 2.7 V | INDUSTRIAL | 2.3 V | 70µA | SYNCHRONOUS | 256KX18 | 1.99 mm | 18 | 4718592 bit | PARALLEL | CACHE SRAM | -- | 0.032 (0.80mm) | 22 mm | 14 mm | -- | |||||||||||
| Mfr Part No THGAF8G9T43BAIR | Toshiba | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 4-SMD, No Lead | 153-VFBGA (11.5x13) | Non-Volatile | SiTime | Strip | Active | -40°C ~ 85°C | SiT8209 | 0.126 L x 0.098 W (3.20mm x 2.50mm) | Active | XO (Standard) | FLASH - NAND | 3.3V | 133.3 MHz | ±25ppm | LVCMOS, LVTTL | Standby (Power Down) | MEMS | 36mA | 512Gb (64G x 8) | - | FLASH | UFS | -- | - | 0.031 (0.80mm) | - |