The category is 'Memory'
Memory (5)
- All Manufacturers
- Base Part Number
- Clock Frequency
- Data Retention Time-Min
- Endurance
- Memory Format
- Memory Interface
- Memory Size
- Memory Types
- Memory Width
- Moisture Sensitivity Level (MSL)
- Number of Functions
- Supply Current-Max
- Supply Current-Max:
0.005mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Number of Pins | Memory Types | Operating Temperature | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Supply Voltage-Min (Vsup) | Interface | Memory Size | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Standby Current-Max | Memory Density | Parallel/Serial | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | I2C Control Byte | Height Seated (Max) | Length | Width | RoHS Status |
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 | Mfr Part No R1EX24512BSAS0I#S0 | Renesas Electronics America | Datasheet | 2960 |
| Min: 1 Mult: 1 | 20 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | yes | Active | 1 (Unlimited) | 8 | 1.8V~5.5V | DUAL | 1 | 3.3V | 1.27mm | R1EX24512 | 8 | Not Qualified | 5.5V | 2/5V | 2.5V | 2-Wire, I2C, Serial | 512Kb 64K x 8 | SYNCHRONOUS | 1MHz | 0.005mA | 550ns | EEPROM | I2C | 8 | 5ms | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010DDDR | 1.73mm | 3.9mm | ROHS3 Compliant | |||||||||||||
 | Mfr Part No 25LC320/S | Microchip Technology | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | Die | YES | Non-Volatile | 0°C~70°C TA | Tray | e3 | yes | Active | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1M ENDURANCE CYCLE; 200 YEARS DATA RETENTION | 8542.32.00.51 | 2.5V~5.5V | DUAL | 260 | 1 | 1.27mm | 40 | 25LC320 | 8 | R-PDSO-G8 | Not Qualified | 5.5V | 3/5V | 2.5V | 32Kb 4K x 8 | SYNCHRONOUS | 2MHz | 0.005mA | EEPROM | SPI | 4KX8 | 8 | 5ms | 0.000001A | 32768 bit | SERIAL | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | ROHS3 Compliant | |||||||||||
| Mfr Part No 25AA640/S | Microchip Technology | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | Die | YES | Non-Volatile | 0°C~70°C TA | Tray | e3 | yes | Active | 1 (Unlimited) | 8 | EAR99 | MATTE TIN | DATA RETENTION > 200 YEARS; 4KV ESD PROTECTION; 1M ENDURANCE CYCLES | 8542.32.00.51 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 25AA640 | 8 | R-PDSO-G8 | Not Qualified | 5.5V | 2/5V | 1.8V | 64Kb 8K x 8 | SYNCHRONOUS | 1MHz | 0.005mA | EEPROM | SPI | 8KX8 | 8 | 5ms | 0.000001A | 65536 bit | SERIAL | SPI | 100000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||
 | Mfr Part No R1EX24512BTAS0I#S0 | Renesas Electronics America | Datasheet | 1876 |
| Min: 1 Mult: 1 | 20 Weeks | Surface Mount | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | yes | Active | 1 (Unlimited) | 8 | 1.8V~5.5V | DUAL | 1 | 3.3V | 0.65mm | R1EX24512 | 8 | Not Qualified | 5.5V | 2/5V | 2.5V | 2-Wire, I2C, Serial | 512Kb 64K x 8 | SYNCHRONOUS | 1MHz | 0.005mA | 550ns | EEPROM | I2C | 8 | 5ms | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010DDDR | 1.1mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||
 | Mfr Part No 25LC640/S | Microchip Technology | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | Die | YES | Non-Volatile | 0°C~70°C TA | Tray | e3 | yes | Active | 1 (Unlimited) | 8 | EAR99 | MATTE TIN | DATA RETENTION > 200 YEARS; 4KV ESD PROTECTION; 1M ENDURANCE CYCLES | 8542.32.00.51 | 2.5V~5.5V | DUAL | 260 | 1 | 2.7V | 1.27mm | 40 | 25LC640 | 8 | R-PDSO-G8 | Not Qualified | 5.5V | 3/5V | 2.5V | 64Kb 8K x 8 | SYNCHRONOUS | 2MHz | 0.005mA | EEPROM | SPI | 8KX8 | 8 | 5ms | 0.000001A | 65536 bit | SERIAL | SPI | 100000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant |
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R1EX24512BSAS0I#S0
Renesas Electronics America
Package:Memory
6.707268
-
25LC320/S
Microchip Technology
Package:Memory
Price: please inquire
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25AA640/S
Microchip Technology
Package:Memory
Price: please inquire
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R1EX24512BTAS0I#S0
Renesas Electronics America
Package:Memory
5.659642
-
25LC640/S
Microchip Technology
Package:Memory
Price: please inquire