The category is 'Memory'
Memory (7)
- All Manufacturers
- Access Time-Max
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Temperature-Max
- Organization
- Supply Current-Max
- Supply Current-Max:
0.012 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Bus Type | Dimensions | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Package Type | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Samacsys Description | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Unit Weight | Usage Level | Operating Temperature | Packaging | Series | Size / Dimension | Tolerance | JESD-609 Code | Pbfree Code | Number of Terminations | ECCN Code | Temperature Coefficient | Type | Resistance | Terminal Finish | Composition | Power (Watts) | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Failure Rate | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Operating Mode | Supply Current-Max | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Features | Mixed Memory Type | Memory Organization | Height Seated (Max) | Length | Width | Ratings |
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![]() | Mfr Part No FM22L16-55-TG | Infineon Technologies | Datasheet | 8000 | - | Min: 1 Mult: 1 | Surface Mount | TSOP-44 | YES | 44-TSOP II | 44 | 110 ns | FM22L16 | 18.51 x 10.26 x 1.04mm | 1350 | CYPRESS SEMICONDUCTOR CORP | Parallel | FM22L16-55-TG | 3.6 V | + 85 C | Non-Volatile | Infineon Technologies | 2.7 V | - 40 C | Yes | 3 | SMD/SMT | 256K | 256000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | TSOP | Active | TSSOP2 | Active | 30 | 0.84 | Details | Yes | FM22L16-55-TG Parallel FRAM Memory, 4Mbit, 55ns, 2.7 u2192 3.6 V 44-Pin TSOP | 3.6 V | 2.7 V | 3.3 V | 0.015637 oz | -40°C ~ 85°C (TA) | Tray | FM22L16-55-TG | e4 | Yes | EAR99 | FRAM | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.71 | FRAM (Ferroelectric RAM) | 2.7V ~ 3.6V | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.3 V | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 4 Mbit | ASYNCHRONOUS | 0.012 mA | 55 ns | FRAM | Parallel | 256 k x 16 | 1.2 mm | 16 | 110ns | 0.00027 A | 4 | MEMORY CIRCUIT | N/A | 256K x 16 | 18.41 mm | 10.16 mm | |||||||||||||||||||||||||
![]() | Mfr Part No TC55YEM416BXGN70 | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 85 ns | TOSHIBA CORP | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 1.8 V | 3A991.B.2.A | 8542.32.00.41 | BOTTOM | BALL | 1 | 0.75 mm | unknown | 48 | R-PBGA-B48 | Not Qualified | 2.2 V | INDUSTRIAL | 1.65 V | ASYNCHRONOUS | 0.012 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 16777216 bit | PARALLEL | COMMON | STANDARD SRAM | 1 V | 11 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No TC55YCM416BTGN70 | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 85 ns | TOSHIBA CORP | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | 1.8 V | 3A991.B.2.A | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 2.2 V | INDUSTRIAL | 1.65 V | ASYNCHRONOUS | 0.012 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 16777216 bit | PARALLEL | COMMON | STANDARD SRAM | 1 V | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No FM16W08-SG | Infineon Technologies | Datasheet | 7 | - | Min: 1 Mult: 1 | Surface Mount | SOIC-28 | YES | 28-SOIC | 28 | 80 ns | FM16W08 | Parallel | 540 | CYPRESS SEMICONDUCTOR CORP | Parallel | FM16W08-SG | + 85 C | Non-Volatile | Infineon Technologies | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 8192 words | 8000 | 85 °C | -40 °C | Tube | PLASTIC/EPOXY | SOP | SOP, SOP28,.4 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Active | SOIC | Active | 30 | 1.02 | Details | Yes | Cypress Semiconductor FM16W08-SG Parallel FRAM Memory, 64kbit, 70ns, 2.7 u2192 5.5 V SOIC 28-Pin | SOIC | 5.5 V | 4.5 V | 3.3 V | 0.078125 oz | Industrial grade | -40 to 85 °C | Tube | FM16W08-SG | e3 | EAR99 | FRAM | Tin (Sn) | 8542.32.00.71 | FRAM (Ferroelectric RAM) | 2.7V ~ 5.5V | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 3.3 V | 5.5 V | 3/5 V | INDUSTRIAL | 2.7 V | 64 kbit | ASYNCHRONOUS | 0.012 mA | 70 ns | FRAM | Parallel | 8 Bit | 8 k x 8 | 2.65 mm | 8 | 130ns | 64 Kb | 0.00005 A | 65536 bit | Industrial | MEMORY CIRCUIT | N/A | 8K x 8 | 17.9 mm | 7.5 mm | |||||||||||||||||||||||
![]() | Mfr Part No FM28V010-SG | Cypress | Datasheet | - | - | Min: 1 Mult: 1 | 0603 (1608 Metric) | YES | 0603 | 28 | 105 ns | RS73F1JRT | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | FM28V010-SG | KOA Speer Electronics, Inc. | 16384 words | 16000 | 85 °C | -40 °C | Tape & Reel (TR) | PLASTIC/EPOXY | SOP | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Active | Active | 5.8 | Yes | -55°C ~ 155°C | RS73-RT | 0.063 L x 0.031 W (1.60mm x 0.80mm) | ±0.1% | 2 | ±25ppm/°C | 6.8 kOhms | Thick Film | 0.2W, 1/5W | SRAMs | CMOS | DUAL | GULL WING | 1.27 mm | compliant | R-PDSO-G28 | Not Qualified | - | 2.5/3.3 V | INDUSTRIAL | 0.012 mA | 16KX8 | 8 | 0.00015 A | 131072 bit | NON-VOLATILE SRAM | Automotive AEC-Q200 | N/A | 0.022 (0.55mm) | AEC-Q200 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No TC55YCM416BSGN70 | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 85 ns | TOSHIBA CORP | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.55,20 | TSSOP48,.55,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | 1.8 V | 3A991.B.2.A | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 2.2 V | INDUSTRIAL | 1.65 V | ASYNCHRONOUS | 0.012 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 16777216 bit | PARALLEL | COMMON | STANDARD SRAM | 1 V | 12.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS65WV102416EBLL-55BA3 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 55 ns | INTEGRATED SILICON SOLUTION INC | 1048576 words | 1000000 | 125 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | 3.3 V | 3A991.B.2.A | 8542.32.00.41 | BOTTOM | BALL | 1 | 0.75 mm | unknown | R-PBGA-B48 | 3.6 V | AUTOMOTIVE | 2.2 V | ASYNCHRONOUS | 0.012 mA | 1MX16 | 3-STATE | 1 mm | 16 | 0.000065 A | 16777216 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | 8 mm | 6 mm |
FM22L16-55-TG
Infineon Technologies
Package:Memory
Price: please inquire
TC55YEM416BXGN70
Toshiba America Electronic Components
Package:Memory
Price: please inquire
TC55YCM416BTGN70
Toshiba America Electronic Components
Package:Memory
Price: please inquire
FM16W08-SG
Infineon Technologies
Package:Memory
Price: please inquire
FM28V010-SG
Cypress
Package:Memory
Price: please inquire
TC55YCM416BSGN70
Toshiba America Electronic Components
Package:Memory
Price: please inquire
IS65WV102416EBLL-55BA3
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
