The category is 'Memory'
Memory (137)
- All Manufacturers
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Temperature-Max
- Organization
- Package Code
- Supply Current-Max
- Supply Current-Max:
0.015 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Material | Number of Terminals | Access Time-Max | Base Product Number | Clock Frequency-Max (fCLK) | For Use With | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Mfr | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Programmable | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Samacsys Description | Supply Voltage-Nom (Vsup) | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Memory Format | Memory Interface | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Memory Organization | Length | Width | Radiation Hardening | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr Part No CY62147VLL-70BAI | Cypress Semiconductor | Datasheet | 759 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY62147VLL-70BAI | 3 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 8.6 | No | 3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 240 | 1 | 0.75 mm | not_compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.015 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.0000055 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 1 V | 8.5 mm | 7 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25PX32-VMW6F | Micron | Datasheet | 10800 | - | Min: 1 Mult: 1 | YES | 8 | 75 MHz | NUMONYX | Numonyx Memory Solutions | M25PX32-VMW6F | 4096 words | 4000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | NOT SPECIFIED | 5.48 | Yes | 3 V | EAR99 | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 4KX8 | 2.5 mm | 8 | 0.00001 A | 32768 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 15 ms | 20 | HARDWARE/SOFTWARE | 5.62 mm | 5.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25P16-VMC6TG | Micron | Datasheet | 3169 | - | Min: 1 Mult: 1 | YES | 8 | 75 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M25P16-VMC6TG | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSON | VSON, SOLCC8,.12,32 | SOLCC8,.12,32 | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | Obsolete | NOT SPECIFIED | 5.7 | Yes | 3 V | NOR TYPE | Flash Memories | CMOS | DUAL | NO LEAD | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 2MX8 | 0.6 mm | 8 | 0.00001 A | 16777216 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 4 mm | 3 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M29DW128G70NF6E | Micron | Datasheet | 20564 | - | Min: 1 Mult: 1 | YES | 56 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M29DW128G70NF6E | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP56,.8,20 | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Active | 5.76 | Yes | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 0.5 mm | compliant | R-PDSO-G56 | Not Qualified | 3/3.3 V | INDUSTRIAL | 0.015 mA | 8MX16 | 16 | 0.0001 A | 134217728 bit | PARALLEL | FLASH | YES | YES | YES | 8,62 | 32K,128K | 8 words | YES | BOTTOM/TOP | YES | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25P05-AVMN6T | STMicroelectronics | Datasheet | 2000 | - | Min: 1 Mult: 1 | YES | 8 | 50 MHz | STMICROELECTRONICS | STMicroelectronics | M25P05-AVMN6T | 65536 words | 64000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.150 INCH, SOP-8 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | NOT SPECIFIED | 5.57 | Yes | 3 V | e4 | EAR99 | NOR TYPE | Nickel/Palladium/Gold (Ni/Pd/Au) | 40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 64KX8 | 1.75 mm | 8 | 0.000005 A | 524288 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 4.9 mm | 3.9 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY62147CV30LL-70BAI | Cypress Semiconductor | Datasheet | 59805 |
| Min: 1 Mult: 1 | 1 Week | Surface Mount | 48-TFBGA | YES | 48-FBGA (7x8.5) | 48 | 70 ns | CY62147 | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY62147CV30LL-70BAI | Volatile | Cypress Semiconductor Corp | 262144 words | 256000 | 85 °C | -40 °C | Bulk | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Active | 30 | 8.57 | No | 3 V | -40°C ~ 85°C (TA) | MoBL® | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | SRAMs | SRAM - Asynchronous | 2.7V ~ 3.3V | BOTTOM | BALL | 240 | 1 | 0.75 mm | not_compliant | 48 | R-PBGA-B48 | Not Qualified | 3.3 V | 3 V | INDUSTRIAL | 2.7 V | 4Mbit | ASYNCHRONOUS | 0.015 mA | 70 ns | SRAM | Parallel | 256KX16 | 3-STATE | 1.2 mm | 16 | 70ns | 0.00001 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | 256K x 16 | 8.5 mm | 7 mm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25P40-VMN6TP | Micron | Datasheet | 422 | - | Min: 1 Mult: 1 | YES | 8 | 50 MHz | STMICROELECTRONICS | STMicroelectronics | M25P40-VMN6TP | 1 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.150 INCH, ROHS COMPLIANT, SOP-8 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | 40 | 5.45 | Yes | 3 V | e4 | Yes | EAR99 | NOR TYPE | Nickel/Palladium/Gold (Ni/Pd/Au) | 40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | 2.5/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 512KX8 | 1.75 mm | 8 | 0.00001 A | 4194304 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 4.9 mm | 3.9 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25P20-VMN6TP | Micron | Datasheet | 1920 | - | Min: 1 Mult: 1 | YES | 8 | 75 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M25P20-VMN6TP | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 30 | 5.26 | Yes | 3 V | e3 | Yes | EAR99 | NOR TYPE | MATTE TIN | 40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 256KX8 | 1.75 mm | 8 | 0.000005 A | 2097152 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 4.9 mm | 3.9 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25P80-VMC6TG | Micron | Datasheet | 16000 | - | Min: 1 Mult: 1 | YES | 8 | 75 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M25P80-VMC6TG | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSON | VSON, SOLCC8,.12,32 | SOLCC8,.12,32 | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | Obsolete | DFP | NOT SPECIFIED | 5.62 | Yes | Automotive grade | Yes | EAR99 | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | NO LEAD | NOT SPECIFIED | 1 | 0.8 mm | compliant | 8 | R-PDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 8MX1 | 0.6 mm | 1 | 0.0001 A | 8388608 bit | AEC-Q100 | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 15 ms | 20 | HARDWARE/SOFTWARE | 4 mm | 3 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M29W256GL70N6F | Micron | Datasheet | 33 | - | Min: 1 Mult: 1 | YES | 56 | 56 | 70 ns | NUMONYX | Numonyx Memory Solutions | M29W256GL70N6F | FLASH, NOR | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP56,.8,20 | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE | Transferred | TSOP | NOT SPECIFIED | 5.41 | Compliant | Yes | 3 V | Tape & Reel (TR) | 3A991.B.1.A | NOR TYPE | 85 °C | -40 °C | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 56 | R-PDSO-G56 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | Parallel | 3.6 V | 2.7 V | 10 mA | ASYNCHRONOUS | 0.015 mA | 70 ns | 16MX16 | 1.2 mm | 16 | 256 Mb | 0.0001 A | 268435456 bit | PARALLEL | Asynchronous | FLASH | 3 V | 0.00007 ms | 8 | YES | YES | YES | 256 | 128K | 8/16 words | YES | YES | 20 mm | 14 mm | No | ||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25PX16-VMW6TG | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 75 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M25PX16-VMW6TG | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.72 | Yes | NOR Flash | 2.7 V | Yes | 3A991.B.1.B.1 | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | SYNCHRONOUS | 0.015 mA | 2MX8 | 2.5 mm | 8 | 0.00001 A | 16777216 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 15 ms | 20 | HARDWARE/SOFTWARE | 5.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M45PE20-VMN6TP | Micron | Datasheet | 6280 |
| Min: 1 Mult: 1 | YES | 8 | 33 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M45PE20-VMN6TP | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | Yes | NOT SPECIFIED | 7.55 | Yes | 3 V | Yes | EAR99 | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 256KX8 | 1.75 mm | 8 | 0.00001 A | 2097152 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 4.9 mm | 3.9 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT28BV256-25JC | Atmel | Datasheet | 2604 | - | Min: 1 Mult: 1 | YES | 32 | 250 ns | ATMEL CORP | Atmel Corporation | AT28BV256-25JC | 2 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 30 | 8.74 | Compliant | No | 3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 70 °C | 0 °C | AUTOMATIC WRITE | 8542.32.00.51 | EEPROMs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | compliant | 250 GHz | 32 | R-PQCC-J32 | Not Qualified | 3.3 V | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | SPI | 3.6 V | 2.7 V | 32 kB | ASYNCHRONOUS | 0.015 mA | 200 ns | 32KX8 | 3.556 mm | 8 | 0.00002 A | 262144 bit | PARALLEL | EEPROM | 3 V | 10000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 13.97 mm | 11.43 mm | Contains Lead | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT28BV256-25TI | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 250 ns | ATMEL CORP | AT28BV256-25TI | 3 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP28,.53,22 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | 30 | 5.8 | No | 3 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | DUAL | GULL WING | 240 | 1 | 0.55 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.015 mA | 32KX8 | 1.2 mm | 8 | 0.00005 A | 262144 bit | PARALLEL | EEPROM | 3 V | 10000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 11.8 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT25PE80-SHN-B | Adesto | Datasheet | 1440 | - | Min: 1 Mult: 1 | 13 Weeks | YES | 8 | 133 MHz | ADESTO TECHNOLOGIES CORP | Adesto Technologies Corporation | AT25PE80-SHN-B | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOIC-8 | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | Active | 1.71 | Yes | 3 V | IT ALSO OPERATES AT FREQUENCY 85 MHZ AT 1.7 TO 3.6 V SUPPLY VOLTAGE | CMOS | DUAL | GULL WING | 1 | 1.27 mm | compliant | R-PDSO-G8 | 3.6 V | INDUSTRIAL | 2.3 V | SYNCHRONOUS | 0.015 mA | 8MX1 | 2.16 mm | 1 | 0.000012 A | 8388608 bit | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 5.29 mm | 5.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT25PE80-MHN-Y | Adesto | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | YES | 8 | 133 MHz | ADESTO TECHNOLOGIES CORP | Cutler Hammer, Div of Eaton Co | T29M29S1516CUES | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | UDFN-8 | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Active | 5.47 | Yes | 3 V | IT ALSO OPERATES AT FREQUENCY 85 MHZ AT 1.7 TO 3.6 V SUPPLY VOLTAGE | CMOS | DUAL | NO LEAD | 1 | 1.27 mm | compliant | R-PDSO-N8 | 3.6 V | INDUSTRIAL | 2.3 V | SYNCHRONOUS | 0.015 mA | 8MX1 | 0.6 mm | 1 | 0.000012 A | 8388608 bit | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 6 mm | 5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT28BV64B-25JC | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 250 ns | ATMEL CORP | AT28BV64B-25JC | 2 | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 30 | 5.8 | No | 3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 100K ENDURANCE CYCLES; DATA RETENTION = 10 YEARS | 8542.32.00.51 | QUAD | J BEND | 225 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.015 mA | 8KX8 | 3.556 mm | 8 | 0.00002 A | 65536 bit | PARALLEL | EEPROM | 3 V | 100000 Write/Erase Cycles | 10 ms | 10 | YES | YES | NO | 64 words | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT28LV010-25PI | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 250 ns | ATMEL CORP | AT28LV010-25PI | 1 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, DIP32,.6 | DIP32,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | 30 | 5.27 | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE | 8542.32.00.51 | DUAL | THROUGH-HOLE | 225 | 1 | 2.54 mm | compliant | 32 | R-PDIP-T32 | Not Qualified | 3.63 V | 3.3 V | INDUSTRIAL | 2.97 V | ASYNCHRONOUS | 0.015 mA | 128KX8 | 3-STATE | 4.826 mm | 8 | 0.00005 A | 1048576 bit | PARALLEL | EEPROM | 3 V | 100000 Write/Erase Cycles | 10 ms | 10 | YES | YES | NO | 128 words | 42.037 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT28LV010-25JI | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 250 ns | ATMEL CORP | AT28LV010-25JI | 2 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 30 | 5.45 | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE | 8542.32.00.51 | QUAD | J BEND | 225 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | Not Qualified | 3.63 V | 3.3 V | INDUSTRIAL | 2.97 V | ASYNCHRONOUS | 0.015 mA | 128KX8 | 3-STATE | 3.556 mm | 8 | 0.00005 A | 1048576 bit | PARALLEL | EEPROM | 3 V | 100000 Write/Erase Cycles | 10 ms | 10 | YES | YES | NO | 128 words | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25P10-AVMN3TP/X | STMicroelectronics | Datasheet | 6400 | - | Min: 1 Mult: 1 | YES | Steel | 8 | 50 MHz | AM2 Cabinets, IS2 Enclosures For Automation | STMICROELECTRONICS | STMicroelectronics | M25P10-AVMN3TP/X | 1 | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | 40 | 5.64 | Yes | 3 V | e4 | Yes | EAR99 | Panel | NICKEL PALLADIUM GOLD | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | 2.5/3.3 V | AUTOMOTIVE | 2.3 V | SYNCHRONOUS | 0.015 mA | 128KX8 | 1.75 mm | 8 | 0.0001 A | 1048576 bit | SERIAL | FLASH | 2.7 V | SPI | 10000 Write/Erase Cycles | HARDWARE/SOFTWARE | 800mm | 100mm |
CY62147VLL-70BAI
Cypress Semiconductor
Package:Memory
Price: please inquire
M25PX32-VMW6F
Micron
Package:Memory
Price: please inquire
M25P16-VMC6TG
Micron
Package:Memory
Price: please inquire
M29DW128G70NF6E
Micron
Package:Memory
Price: please inquire
M25P05-AVMN6T
STMicroelectronics
Package:Memory
Price: please inquire
CY62147CV30LL-70BAI
Cypress Semiconductor
Package:Memory
3.234829
M25P40-VMN6TP
Micron
Package:Memory
Price: please inquire
M25P20-VMN6TP
Micron
Package:Memory
Price: please inquire
M25P80-VMC6TG
Micron
Package:Memory
Price: please inquire
M29W256GL70N6F
Micron
Package:Memory
Price: please inquire
M25PX16-VMW6TG
Micron
Package:Memory
Price: please inquire
M45PE20-VMN6TP
Micron
Package:Memory
2.818654
AT28BV256-25JC
Atmel
Package:Memory
Price: please inquire
AT28BV256-25TI
Microchip
Package:Memory
Price: please inquire
AT25PE80-SHN-B
Adesto
Package:Memory
Price: please inquire
AT25PE80-MHN-Y
Adesto
Package:Memory
Price: please inquire
AT28BV64B-25JC
Microchip
Package:Memory
Price: please inquire
AT28LV010-25PI
Microchip
Package:Memory
Price: please inquire
AT28LV010-25JI
Microchip
Package:Memory
Price: please inquire
M25P10-AVMN3TP/X
STMicroelectronics
Package:Memory
Price: please inquire
