The category is 'Memory'
Memory (137)
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- JESD-30 Code
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- Number of Words Code
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- Supply Current-Max:
0.015 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Active Read Current - Max | Address Bus Width (bit) | Automotive | Base Product Number | Block Organization | Brand | Cell Type | Chip Density (bit) | Clock Frequency-Max (fCLK) | Dimensions | ECCN (US) | EU RoHS | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Lead Shape | Manufacturer | Manufacturer Part Number | Max. Access Time (ns) | Maximum Clock Frequency | Maximum Operating Supply Voltage | Maximum Operating Supply Voltage (V) | Maximum Operating Temperature | Maximum Operating Temperature (°C) | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Supply Voltage (V) | Minimum Operating Temperature | Minimum Operating Temperature (°C) | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of Bits/Word (bit) | Number of Words | Number of Words Code | Operating Current (mA) | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Height | Package Length | Package Shape | Package Style | Package Type | Package Width | Part Life Cycle Code | Part Package Code | PCB changed | PPAP | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Samacsys Description | Standard Package Name | Supplier Package | Supplier Temperature Grade | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Typical Operating Supply Voltage | Typical Operating Supply Voltage (V) | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | Part Status | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Clock Frequency | Supply Current-Max | Memory Format | Memory Interface | Architecture | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Page Size | Boot Block | Product Category | Memory Organization | Height | Length | Width |
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![]() | Mfr Part No AT28LV010-25PI | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 250 ns | ATMEL CORP | AT28LV010-25PI | 1 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, DIP32,.6 | DIP32,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | 30 | 5.27 | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE | 8542.32.00.51 | DUAL | THROUGH-HOLE | 225 | 1 | 2.54 mm | compliant | 32 | R-PDIP-T32 | Not Qualified | 3.63 V | 3.3 V | INDUSTRIAL | 2.97 V | ASYNCHRONOUS | 0.015 mA | 128KX8 | 3-STATE | 4.826 mm | 8 | 0.00005 A | 1048576 bit | PARALLEL | EEPROM | 3 V | 100000 Write/Erase Cycles | 10 ms | 10 | YES | YES | NO | 128 words | 42.037 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT28LV010-25JI | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 250 ns | ATMEL CORP | AT28LV010-25JI | 2 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 30 | 5.45 | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE | 8542.32.00.51 | QUAD | J BEND | 225 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | Not Qualified | 3.63 V | 3.3 V | INDUSTRIAL | 2.97 V | ASYNCHRONOUS | 0.015 mA | 128KX8 | 3-STATE | 3.556 mm | 8 | 0.00005 A | 1048576 bit | PARALLEL | EEPROM | 3 V | 100000 Write/Erase Cycles | 10 ms | 10 | YES | YES | NO | 128 words | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT28BV256-25TI | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 250 ns | ATMEL CORP | AT28BV256-25TI | 3 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP28,.53,22 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | 30 | 5.8 | No | 3 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | DUAL | GULL WING | 240 | 1 | 0.55 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.015 mA | 32KX8 | 1.2 mm | 8 | 0.00005 A | 262144 bit | PARALLEL | EEPROM | 3 V | 10000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 11.8 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT28BV64B-25JC | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 250 ns | ATMEL CORP | AT28BV64B-25JC | 2 | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 30 | 5.8 | No | 3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 100K ENDURANCE CYCLES; DATA RETENTION = 10 YEARS | 8542.32.00.51 | QUAD | J BEND | 225 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.015 mA | 8KX8 | 3.556 mm | 8 | 0.00002 A | 65536 bit | PARALLEL | EEPROM | 3 V | 100000 Write/Erase Cycles | 10 ms | 10 | YES | YES | NO | 64 words | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M45PE10-VMP6G | STMicroelectronics | Datasheet | 1280 | - | Min: 1 Mult: 1 | YES | 8 | 75 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M45PE10-VMP6G | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | HVSON, SOLCC8,.25 | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Obsolete | DFP | 30 | 5.37 | Yes | 3 V | Yes | EAR99 | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | NO LEAD | 260 | 1 | 1.27 mm | compliant | 8 | R-PDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 128KX8 | 1 mm | 8 | 0.00001 A | 1048576 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 23 ms | 20 | HARDWARE/SOFTWARE | 6 mm | 5 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25PE80-VMW6P | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 50 MHz | NUMONYX | Numonyx Memory Solutions | M25PE80-VMW6P | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.47 | Yes | 3 V | Yes | EAR99 | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 1MX8 | 2.5 mm | 8 | 0.00001 A | 8388608 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 23 ms | 20 | HARDWARE/SOFTWARE | 5.62 mm | 5.59 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY62157DV30LL-55BVXIT | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 55 ns | CYPRESS SEMICONDUCTOR CORP | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | Yes | e1 | Yes | 3A991.B.2.A | TIN SILVER COPPER | 8542.32.00.41 | BOTTOM | BALL | 260 | 0.75 mm | unknown | 20 | R-PBGA-B48 | Not Qualified | INDUSTRIAL | ASYNCHRONOUS | 0.015 mA | 512KX16 | 3-STATE | 16 | 0.000004 A | 8388608 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No TMS62256-12NW | Texas Instruments | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 120 ns | TEXAS INSTRUMENTS INC | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | DIP | DIP-28 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | EAR99 | 8542.32.00.41 | DUAL | THROUGH-HOLE | NOT SPECIFIED | 2.54 mm | not_compliant | NOT SPECIFIED | R-PDIP-T28 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.015 mA | 32KX8 | 3-STATE | 8 | 0.002 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS62WV2568DALL-55BLI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 55 ns | INTEGRATED SILICON SOLUTION INC | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA36,6X8,30 | BGA36,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | Yes | 1.8 V | 3A991.B.2.A | 8542.32.00.41 | BOTTOM | BALL | 1 | 0.75 mm | compliant | R-PBGA-B36 | Not Qualified | 1.98 V | INDUSTRIAL | 1.62 V | ASYNCHRONOUS | 0.015 mA | 256KX8 | 3-STATE | 1.2 mm | 8 | 0.00001 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 1 V | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CYK128K16SCCBU-70BVI | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | CYPRESS SEMICONDUCTOR CORP | 3 | 131072 words | 128000 | 85 °C | -25 °C | PLASTIC/EPOXY | VFBGA | 6 X 8 MM, 1 MM HEIGHT, VFBGA-48 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | No | 3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.75 mm | not_compliant | NOT SPECIFIED | 48 | R-PBGA-B48 | Not Qualified | 3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | 0.015 mA | 128KX16 | 3-STATE | 1 mm | 16 | 0.00004 A | 2097152 bit | PARALLEL | COMMON | PSEUDO STATIC RAM | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No SC22101CN | Sierra Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | NO | 18 | 300 ns | SIERRA SEMICONDUCTOR | 128 words | 128 | 70 °C | PLASTIC/EPOXY | DIP | DIP18,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | Tin/Lead (Sn/Pb) | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-PDIP-T18 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.015 mA | 128X8 | 3-STATE | 8 | 0.0001 A | 1024 bit | PARALLEL | EEPROM | 5 V | 20 ms | YES | NO | NO | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY62137VNLL-70ZXI | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 70 ns | CYPRESS SEMICONDUCTOR CORP | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | LEAD FREE, TSOP2-44 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 3 V | e4 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | DUAL | GULL WING | 260 | 1 | 0.8 mm | unknown | 20 | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.015 mA | 128KX16 | 3-STATE | 1.194 mm | 16 | 0.0000075 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 1 V | 18.415 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No N08L163WC2AB2-70I | ON Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | 19 | No | 8M | 3A991.b.2.a | Compliant | NANOAMP SOLUTIONS INC | Ball | NanoAmp Solutions, Inc. | N08L163WC2AB2-70I | 70 | 3.6 | 85 | 2.3 | -40 | Surface Mount | 16 | 512K | 512000 | 15 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA48,6X8,30 | BGA48,6X8,30 | 0.96 | 8 | RECTANGULAR | GRID ARRAY, FINE PITCH | 6 | Contact Manufacturer | 48 | No | 5.79 | Yes | BGA | BGA | Industrial | Asynchronous | 3 | Obsolete | SRAMs | CMOS | BOTTOM | BALL | 0.75 mm | unknown | 48 | R-PBGA-B48 | Not Qualified | 3/3.3 V | INDUSTRIAL | 1 | ASYNCHRONOUS | 0.015 mA | 512KX16 | 3-STATE | 16 | 0.00001 A | 8388608 bit | PARALLEL | COMMON | STANDARD SRAM | 1.8 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M45PE20-VMN6P | Alliance Memory | Datasheet | 2800 |
| Min: 1 Mult: 1 | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | 8-SO | 8 | 15 mA | M45PE20 | Alliance Memory | NOR | 33 MHz | 5 x 4 x 1.25mm | 2000 | MICRON TECHNOLOGY INC | SPI | Alliance Memory | M45PE20-VMN6P | 75 MHz | 3.6 V | +85 °C | Non-Volatile | Alliance Memory, Inc. | 2.7 V | -40 °C | Yes | SMD/SMT | 256kB | 256000 | 85 °C | -40 °C | Tube | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | SOIC | Obsolete | SOIC | Obsolete | NOT SPECIFIED | 7.53 | Yes | 3.6 V | 2.7 V | 3 V | -40°C ~ 85°C (TA) | Tube | M45PE | Yes | EAR99 | NOR TYPE | 8542.32.00.51 | Memory & Data Storage | FLASH - NOR | 2.7V ~ 3.6V | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2Mbit | SYNCHRONOUS | 75 MHz | 0.015 mA | FLASH | SPI | 8 bit | 256 k x 8 | 1.75 mm | 8 | 3ms | NOR Flash | 0.00001 A | 2097152 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | NOR Flash | 256K x 8 | 1.25mm | 5mm | 4mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25P80-VMW6TGBA | Micron | Datasheet | 107 | - | Min: 1 Mult: 1 | YES | 8 | 75 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M25P80-VMW6TGBA | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | Obsolete | 30 | 5.63 | Yes | Automotive grade | EAR99 | NOR TYPE | LG-MAX | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | R-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 1MX8 | 2.5 mm | 8 | 0.00001 A | 8388608 bit | AEC-Q100 | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 6.05 mm | 5.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25P80VMP6G | NUMONYX | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 75 MHz | STMICROELECTRONICS | STMicroelectronics | M25P80VMP6G | 1048576 words | 1000000 | 85 °C | -40 °C | UNSPECIFIED | HVSON | 6 X 5 MM, ROHS COMPLIANT, MLP-8 | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Transferred | SOIC | NOT SPECIFIED | 5.37 | Yes | 3 V | EAR99 | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | compliant | 8 | R-XDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 1MX8 | 1 mm | 8 | 0.00001 A | 8388608 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 15 ms | 20 | HARDWARE/SOFTWARE | 6 mm | 5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M27V101-120N1 | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 120 ns | STMICROELECTRONICS | STMicroelectronics | M27V101-120N1 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | TSOP1 | 8 X 20 MM, PLASTIC, TSOP-32 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | NOT SPECIFIED | 5.9 | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | OTP ROMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | not_compliant | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.015 mA | 128KX8 | 3-STATE | 1.2 mm | 8 | 0.00002 A | 1048576 bit | PARALLEL | COMMON | OTP ROM | 18.4 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25PE80-VMW6TP | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 50 MHz | NUMONYX | Numonyx Memory Solutions | M25PE80-VMW6TP | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.47 | Yes | 3 V | Yes | EAR99 | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 1MX8 | 2.5 mm | 8 | 0.00001 A | 8388608 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 23 ms | 20 | HARDWARE/SOFTWARE | 5.62 mm | 5.59 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS25WP064D-JKLE | Integrated Silicon Solution, Inc. (ISSI) | Datasheet | 2070 |
| Min: 1 Mult: 1 | 10 Weeks | Surface Mount | WSON-8 | YES | 8-WSON (6x5) | 8 | 10 mA | Symmetrical | NOR | 166 MHz | 570 | INTEGRATED SILICON SOLUTION INC | QPI, SPI | IS25WP064D-JKLE | 166 MHz | 1.95 V | + 105 C | Non-Volatile | ISSI, Integrated Silicon Solution Inc | 1.65 V | - 40 C | Surface Mount | SMD/SMT | 8 Mb | 8000000 | 105 °C | -40 °C | Bulk | PLASTIC/EPOXY | HVSON | WSON-8 | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Active | Active | 5.65 | Details | Yes | 64Mb QPI/QSPI, WSON, RoHS | WSON | 1.95 V | 1.65 V | 1.8 V | Synchronous | 1.8 V | -40 to 105 °C | Tray | IS25WP064D | NOR TYPE | FLASH - NOR (SLC) | 1.65V ~ 1.95V | DUAL | NO LEAD | 1 | 1.27 mm | unknown | 8 | R-PDSO-N8 | 1.95 V | INDUSTRIAL | 1.65 V | 64 Mbit | SYNCHRONOUS | 166 MHz | 0.015 mA | FLASH | SPI - Quad I/O, QPI, DTR | Sectored | 8 bit | 8 M x 8 | 0.8 mm | 8 | 40µs, 800µs | 24 Bit | 64 Mbit | 0.00006 A | 67108864 bit | Extended Industrial | SERIAL | FLASH | 1.65 to 1.95 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | Yes | 8M x 8 | 6 mm | 5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M45PE16-VMW6TG | Alliance Memory, Inc. | Datasheet | 381 |
| Min: 1 Mult: 1 | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | YES | 8-SO | 8 | 15 mA | M45PE16 | Alliance Memory | NOR | 75 MHz | 5 x 4 x 1.25mm | 1500 | MICRON TECHNOLOGY INC | SPI | Alliance Memory | M45PE16-VMW6TG | 75 MHz | 3.6 V | +85 °C | Non-Volatile | Alliance Memory, Inc. | 2.7 V | -40 °C | Yes | SMD/SMT | 2MB | 2000000 | 85 °C | -40 °C | Tape & Reel (TR) | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | SOIC | Obsolete | SOIC | Active | NOT SPECIFIED | 7.74 | Yes | 3.6 V | 2.7 V | 3 V | -40°C ~ 85°C (TA) | Cut Tape | - | Yes | EAR99 | NOR TYPE | 8542.32.00.51 | Memory & Data Storage | 2.7V ~ 3.6V | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 16Mbit | SYNCHRONOUS | 75 MHz | 0.015 mA | FLASH | SPI | 8 bit | 2 M x 8 | 2.5 mm | 8 | 3ms | NOR Flash | 0.00001 A | 16777216 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | NOR Flash | 2M x 8 | 1.25mm | 5mm | 4mm |
AT28LV010-25PI
Microchip
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