The category is 'Memory'
Memory (137)
- All Manufacturers
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Temperature-Max
- Organization
- Package Code
- Supply Current-Max
- Supply Current-Max:
0.015 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Lifecycle Status | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Address Bus | Cell Type | Clock Frequency-Max (fCLK) | Contact Pitch | Gross Weight | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Memory Types | Moisture Sensitivity Levels | Mounting | Number of Words | Number of Words Code | Operating Supply Voltage (Max) | Operating Supply Voltage (Min) | Operating Supply Voltage (Typ) | Operating Temp Range | Operating Temperature (Max.) | Operating Temperature (Min.) | Operating Temperature Classification | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Package Type | Part Life Cycle Code | Part Package Code | Programmable | Rad Hardened | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Schedule B | Supply Voltage-Nom (Vsup) | Transport Package Size/Quantity | Usage Level | Packaging | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Depth | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Supply Current | Length | Width | Thickness | Radiation Hardening |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr Part No M27V101-120N1 | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 120 ns | STMICROELECTRONICS | STMicroelectronics | M27V101-120N1 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | TSOP1 | 8 X 20 MM, PLASTIC, TSOP-32 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | NOT SPECIFIED | 5.9 | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | OTP ROMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | not_compliant | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.015 mA | 128KX8 | 3-STATE | 1.2 mm | 8 | 0.00002 A | 1048576 bit | PARALLEL | COMMON | OTP ROM | 18.4 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25P80VMP6G | NUMONYX | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 75 MHz | STMICROELECTRONICS | STMicroelectronics | M25P80VMP6G | 1048576 words | 1000000 | 85 °C | -40 °C | UNSPECIFIED | HVSON | 6 X 5 MM, ROHS COMPLIANT, MLP-8 | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Transferred | SOIC | NOT SPECIFIED | 5.37 | Yes | 3 V | EAR99 | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | compliant | 8 | R-XDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 1MX8 | 1 mm | 8 | 0.00001 A | 8388608 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 15 ms | 20 | HARDWARE/SOFTWARE | 6 mm | 5 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25PE80-VMW6TP | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 50 MHz | NUMONYX | Numonyx Memory Solutions | M25PE80-VMW6TP | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.47 | Yes | 3 V | Yes | EAR99 | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 1MX8 | 2.5 mm | 8 | 0.00001 A | 8388608 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 23 ms | 20 | HARDWARE/SOFTWARE | 5.62 mm | 5.59 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No FM25256B-G | Cypress | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | RAMTRON INTERNATIONAL CORP | Ramtron International Corporation | FM25256B-G | 1 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 5.83 | Yes | 5 V | 8542.32.00.71 | SRAMs | CMOS | DUAL | GULL WING | 1 | 1.27 mm | unknown | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4 V | SYNCHRONOUS | 0.015 mA | 32KX8 | 1.75 mm | 8 | 0.00015 A | 262144 bit | MEMORY CIRCUIT | 4.9 mm | 3.9 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No FM1608-120-S | Cypress | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 120 ns | RAMTRON INTERNATIONAL CORP | Ramtron International Corporation | FM1608-120-S | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.4 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 5.68 | No | 5 V | e0 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | SRAMs | CMOS | DUAL | GULL WING | 1 | 1.27 mm | unknown | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.015 mA | 8KX8 | 2.65 mm | 8 | 0.00002 A | 65536 bit | MEMORY CIRCUIT | 17.9 mm | 7.5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No HS9-6664RH-8 | Intersil | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 28 | 65 ns | HARRIS SEMICONDUCTOR | Harris Semiconductor | HS9-6664RH-8 | 8192 words | 8000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DFP | DFP, FL28,.5 | FL28,.5 | RECTANGULAR | FLATPACK | Transferred | 5.78 | Compliant | No | 5 V | Military grade | e0 | EAR99 | Tin/Lead (Sn/Pb) | 125 °C | -55 °C | RADIATION-HARDENED PROM | 8542.32.00.71 | OTP ROMs | CMOS | DUAL | FLAT | 1 | 1.27 mm | unknown | R-CDFP-F28 | Not Qualified | 5 V | 5 V | MILITARY | ASYNCHRONOUS | 0.015 mA | 8KX8 | 3-STATE | 8 | 64 kb | 0.0005 A | 65536 bit | 38535Q/M;38534H;883B | PARALLEL | OTP ROM | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NAND512R3A2CZA6E | STMicroelectronics | Datasheet | 476 | - | Min: 1 Mult: 1 | YES | 64 | 45 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | NAND512R3A2CZA6E | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | BGA64,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | 5.81 | Yes | 1.8 V | SLC NAND TYPE | Flash Memories | CMOS | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B64 | Not Qualified | 1.8 V | INDUSTRIAL | 0.015 mA | 64MX8 | 8 | 0.00005 A | 536870912 bit | PARALLEL | FLASH | NO | NO | YES | 4K | 16K | 512 words | YES | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No PM37LV512-70JC | Programmable Microelectronics Corp | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | 2.54x2.54 | 45.50 | PROGRAMMABLE MICROELECTRONICS CORP | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Transferred | 28.5*21*19/300 | 3A991.B.1.B.2 | ECS type prototype board | 8542.32.00.51 | QUAD | J BEND | 1.27 mm | 160 mm | unknown | R-PQCC-J32 | Not Qualified | COMMERCIAL | 0.015 mA | 64KX8 | 8 | 0.003 A | 524288 bit | PARALLEL | EEPROM | NO | NO | YES | 100 mm | 1.6 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY62147CV25LL-70BVI | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | CYPRESS SEMICONDUCTOR CORP | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | 6 X 8 MM, 1 MM HEIGHT, VFBGA-48 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | No | 2.5 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | BOTTOM | BALL | 1 | 0.75 mm | not_compliant | 48 | R-PBGA-B48 | Not Qualified | 2.7 V | INDUSTRIAL | 2.2 V | ASYNCHRONOUS | 0.015 mA | 256KX16 | 3-STATE | 1 mm | 16 | 0.00001 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M28256-20WKA6T | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 200 ns | STMICROELECTRONICS | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | Yes | 3 V | e3 | EAR99 | MATTE TIN | 8542.32.00.51 | QUAD | J BEND | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | Not Qualified | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.015 mA | 32KX8 | 3-STATE | 3.56 mm | 8 | 0.00002 A | 262144 bit | PARALLEL | EEPROM | 3 V | 100000 Write/Erase Cycles | 5 ms | YES | YES | NO | 64 words | 13.995 mm | 11.455 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No TMS6264L-12NW | Texas Instruments | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 120 ns | TEXAS INSTRUMENTS INC | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | EAR99 | 8542.32.00.41 | DUAL | THROUGH-HOLE | NOT SPECIFIED | 2.54 mm | not_compliant | NOT SPECIFIED | R-PDIP-T28 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.015 mA | 8KX8 | 3-STATE | 8 | 0.00005 A | 65536 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS62WV2568ALL-70TI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | INTEGRATED SILICON SOLUTION INC | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | PLASTIC, TSOP1-32 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | No | 1.8 V | e0 | No | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.5 mm | compliant | 32 | R-PDSO-G32 | Not Qualified | 2.2 V | INDUSTRIAL | 1.65 V | ASYNCHRONOUS | 0.015 mA | 256KX8 | 3-STATE | 1.2 mm | 8 | 0.00001 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 1 V | 18.4 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MX23L3214XI-90G | Macronix International Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 90 ns | MACRONIX INTERNATIONAL CO LTD | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 7.95 X 9.95 MM, 1.20 MM HEIGHT, 0.75 MM PITCH, LEAD FREE, MO-207, MINI, BGA-48 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | DSBGA | Yes | 3 V | e1 | EAR99 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.75 mm | unknown | 40 | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.015 mA | 2MX16 | 1.2 mm | 16 | 0.000015 A | 33554432 bit | PARALLEL | MASK ROM | 9.95 mm | 7.95 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M29W256GH7AN6F | Micron | Datasheet | 522 | - | Min: 1 Mult: 1 | Obsolete (Last Updated: 2 years ago) | YES | 56 | 56 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W256GH7AN6F | NOR | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSOP-56 | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | 30 | 5.75 | Compliant | Yes | 3 V | Automotive grade | Tape & Reel | e3 | Yes | NOR TYPE | MATTE TIN | 85 °C | -40 °C | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | R-PDSO-G56 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | Parallel | 3.6 V | 2.7 V | ASYNCHRONOUS | 0.015 mA | 16MX16 | 1.2 mm | 16 | 256 Mb | 0.0001 A | 268435456 bit | AEC-Q100 | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 256 | 128K | 8/16 words | YES | BOTTOM/TOP | YES | 18.4 mm | 14 mm | No | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25P20-VMN3TPB | Micron | Datasheet | 278 | - | Min: 1 Mult: 1 | EOL (Last Updated: 2 years ago) | YES | 8 | 8 | 1 b | NOR | 75 MHz | MICRON TECHNOLOGY INC | Serial (SPI) | Micron Technology Inc | M25P20-VMN3TPB | NOR | Surface Mount | 256K word | 256000 | 3.6 V | 2.7 V | 3.3 V | -40C to 125C | 125C | -40C | Automotive | 125 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | SO N | Obsolete | SOIC | Yes | No | 30 | 7.24 | Compliant | Yes | 8542320070, 8542320070/8542320070/8542320070/8542320070/8542320070 | 2.7 V | Tape and Reel | Yes | NOR TYPE | 125 °C | -40 °C | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 75 MHz | 8 | R-PDSO-G8 | Not Qualified | 3.3 V | 3.6 V | 3/3.3 V | AUTOMOTIVE | 2.3 V | 2.3 V | SPI, Serial | 3.6 V | 2.3 V | 244.1 kB | 8 mA | SYNCHRONOUS | 0.015 mA | 8 ns | 256KX8 | 1.75 mm | 8 | 1 b | 2097152 Bit | 0.00005 A | 2097152 bit | 8 ns | SERIAL | Synchronous | 8 b | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256 B | 8 mA | 4.9 mm | 3.9 mm | No | |||||||||||||||||||||||||||||
![]() | Mfr Part No M25PX32-VMF6F | Micron | Datasheet | 800 | - | Min: 1 Mult: 1 | YES | 16 | 75 MHz | NUMONYX | Numonyx Memory Solutions | M25PX32-VMF6F | 4096 words | 4000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOP-16 | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | NOT SPECIFIED | 5.47 | Yes | 3 V | EAR99 | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 16 | R-PDSO-G16 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 4KX8 | 2.65 mm | 8 | 0.00001 A | 32768 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 15 ms | 20 | HARDWARE/SOFTWARE | 10.3 mm | 7.5 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M29DW128G60ZA6E | Micron | Datasheet | 652 | - | Min: 1 Mult: 1 | YES | 64 | 60 ns | NUMONYX | Numonyx Memory Solutions | M29DW128G60ZA6E | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA64,8X8,40 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY | Transferred | BGA | NOT SPECIFIED | 5.72 | Yes | 3 V | 3A991.B.1.A | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | unknown | 64 | R-PBGA-B64 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.015 mA | 8MX16 | 1.2 mm | 16 | 0.0001 A | 134217728 bit | PARALLEL | FLASH | 3 V | YES | YES | YES | 8,62 | 32K,128K | 8 words | YES | BOTTOM/TOP | YES | 13 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25PE40-VMN6TPBA | Micron | Datasheet | 12 | - | Min: 1 Mult: 1 | YES | 8 | 75 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M25PE40-VMN6TPBA | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | 30 | 5.72 | Yes | 3 V | Automotive grade | Yes | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | R-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 512KX8 | 1.75 mm | 8 | 0.00001 A | 4194304 bit | AEC-Q100 | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 4.9 mm | 3.9 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M45PE40-VMW6TG | Micron | Datasheet | 8 |
| Min: 1 Mult: 1 | YES | 8 | 33 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M45PE40-VMW6TG | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | Active | SOIC | 30 | 1.87 | Yes | 3 V | Yes | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 512KX8 | 2.5 mm | 8 | 0.00001 A | 4194304 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 25 ms | 20 | HARDWARE/SOFTWARE | 5.62 mm | 5.25 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY62148VLL-70SI | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY62148VLL-70SI | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.450 INCH, PLASTIC, SOIC-32 | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 30 | 5.38 | No | 3 V | Military grade | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | TTL COMPATIBLE INPUTS/OUTPUTS, LOW STANDBY POWER | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 225 | 1 | 1.27 mm | not_compliant | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | 2/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.015 mA | 512KX8 | 3-STATE | 2.9972 mm | 8 | 0.0000055 A | 4194304 bit | MIL-STD-883 | PARALLEL | COMMON | STANDARD SRAM | 1 V | 20.447 mm | 11.303 mm |
M27V101-120N1
STMicroelectronics
Package:Memory
Price: please inquire
M25P80VMP6G
NUMONYX
Package:Memory
Price: please inquire
M25PE80-VMW6TP
STMicroelectronics
Package:Memory
Price: please inquire
FM25256B-G
Cypress
Package:Memory
Price: please inquire
FM1608-120-S
Cypress
Package:Memory
Price: please inquire
HS9-6664RH-8
Intersil
Package:Memory
Price: please inquire
NAND512R3A2CZA6E
STMicroelectronics
Package:Memory
Price: please inquire
PM37LV512-70JC
Programmable Microelectronics Corp
Package:Memory
Price: please inquire
CY62147CV25LL-70BVI
Cypress Semiconductor
Package:Memory
Price: please inquire
M28256-20WKA6T
STMicroelectronics
Package:Memory
Price: please inquire
TMS6264L-12NW
Texas Instruments
Package:Memory
Price: please inquire
IS62WV2568ALL-70TI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
MX23L3214XI-90G
Macronix International Co Ltd
Package:Memory
Price: please inquire
M29W256GH7AN6F
Micron
Package:Memory
Price: please inquire
M25P20-VMN3TPB
Micron
Package:Memory
Price: please inquire
M25PX32-VMF6F
Micron
Package:Memory
Price: please inquire
M29DW128G60ZA6E
Micron
Package:Memory
Price: please inquire
M25PE40-VMN6TPBA
Micron
Package:Memory
Price: please inquire
M45PE40-VMW6TG
Micron
Package:Memory
2.064246
CY62148VLL-70SI
Cypress Semiconductor
Package:Memory
Price: please inquire
