The category is 'Memory'
Memory (197)
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- JESD-30 Code
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- Supply Current-Max:
0.02 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Lifecycle Status | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Address Bus | Cell Type | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Memory Types | Mounting | Number of Words | Number of Words Code | Operating Supply Voltage (Max) | Operating Supply Voltage (Min) | Operating Supply Voltage (Typ) | Operating Temp Range | Operating Temperature (Max.) | Operating Temperature (Min.) | Operating Temperature Classification | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Package Type | Part Life Cycle Code | Part Package Code | Programmable | Rad Hardened | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Samacsys Description | Supply Voltage-Nom (Vsup) | Packaging | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Density | Standby Current-Max | Memory Density | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Data Retention Time-Min | Write Protection | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Supply Current | Height | Length | Width | Radiation Hardening | REACH SVHC | Lead Free |
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 | Mfr Part No N25Q064A13EF640F | Micron | Datasheet | 3150 | - | Min: 1 Mult: 1 | YES | 8 | 1(b) | NOR | 108 MHz | MICRON TECHNOLOGY INC | Serial (SPI) | Micron Technology Inc | N25Q064A13EF640F | Surface Mount | 8M | 1000000 | 3.6(V) | 2.7(V) | 3/3.3(V) | -40C to 85C | 85C | -40C | Industrial | 85 °C | -40 °C | PLASTIC/EPOXY | VSON | VSON, SOLCC8,.25 | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | MLP EP | Obsolete | DFN | Yes | No | 30 | 7.94 | Yes | Serial Flash 64 Mbit SPI 3V MLP8 6x5 N25Q064A13EF640F, Serial-SPI NOR Flash Memory, 8M x 8 bit 64Mbit, 7ns, 2.7 u2192 3.6 V, 8-Pin, MLP | 3 V | Tape and Reel | Yes | 3A991.B.1.A | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | NO LEAD | 260 | 1 | 1.27 mm | compliant | 8 | R-PDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 1MX64 | 0.9 mm | 64 | 67108864(Bit) | 0.0001 A | 67108864 bit | 7(ns) | SERIAL | Synchronous | 8(b) | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 20(mA) | 6 mm | 5 mm | |||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W128GL70N6F | Micron | Datasheet | 8 | - | Min: 1 Mult: 1 | YES | 56 | 70 ns | NUMONYX | Numonyx Memory Solutions | M29W128GL70N6F | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP56,.8,20 | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP | NOT SPECIFIED | 5.36 | Yes | 3 V | 3A991.B.1.A | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 56 | R-PDSO-G56 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 8MX16 | 1.2 mm | 16 | 0.0001 A | 134217728 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 128 | 128K | 8/16 words | YES | YES | 18.4 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W128GL70ZA6F | Micron | Datasheet | 5810 | - | Min: 1 Mult: 1 | YES | 64 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W128GL70ZA6F | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA64,8X8,40 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | NOT SPECIFIED | 7.36 | Yes | 3 V | e1 | Yes | 3A991.B.1.A | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 64 | R-PBGA-B64 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 8KX16 | 1.2 mm | 16 | 0.0001 A | 131072 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 128 | 128K | 8/16 words | YES | YES | 13 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W640FB70ZA6E | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W640FB70ZA6E | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.47 | Yes | 3 V | e1 | Yes | 3A991.B.1.A | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 4MX16 | 1.2 mm | 16 | 0.0001 A | 67108864 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 8,127 | 8K,64K | 4/8 words | YES | BOTTOM | YES | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W320EB70ZE6F | Micron | Datasheet | 20000 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W320EB70ZE6F | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 7.54 | Yes | 3 V | e1 | Yes | 3A991.B.1.A | NOR TYPE | Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.2 mm | 16 | 0.0001 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | BOTTOM | YES | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W320DB70N6E | STMicroelectronics | Datasheet | 1913 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W320DB70N6E | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 5.61 | Yes | 3.3 V | e3 | Yes | 3A991.B.1.A | NOR TYPE | Matte Tin (Sn) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.2 mm | 16 | 0.0001 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,63 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W128GL70ZS3F | Micron | Datasheet | 2880 |
| Min: 1 Mult: 1 | YES | 64 | 70 ns | 24/23(b) | NOR | MICRON TECHNOLOGY INC | Parallel | Micron Technology Inc | M29W128GL70ZS3F | Surface Mount | 16M/8M | 8000 | 3.6(V) | 2.7(V) | 3/3.3(V) | -40C to 125C | 125C | -40C | Automotive | 125 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA64,8X8,40 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | FBGA | Obsolete | BGA | Yes | No | NOT SPECIFIED | 5.81 | Yes | 3 V | Tape and Reel | e1 | Yes | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 64 | R-PBGA-B64 | Not Qualified | 3.6 V | 3/3.3 V | AUTOMOTIVE | 2.7 V | ASYNCHRONOUS | 0.02 mA | 8KX16 | 1.4 mm | 16 | 134217728(Bit) | 0.0001 A | 131072 bit | 70(ns) | PARALLEL | Asynchronous | 8/16(b) | FLASH | 3 V | 8 | YES | YES | YES | 128 | 128K | 8/16 words | YES | YES | 10(mA) | 13 mm | 11 mm | |||||||||||||||||||||||||||||||||
| Mfr Part No M29F010B70K6F | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M29F010B70K6F | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | LEAD FREE, PLASTIC, LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 40 | 5.42 | Yes | 5 V | e3 | Yes | EAR99 | NOR TYPE | MATTE TIN | 8542.32.00.51 | Flash Memories | CMOS | QUAD | J BEND | 250 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.02 mA | 128KX8 | 3.56 mm | 8 | 0.0001 A | 1048576 bit | PARALLEL | FLASH | 5 V | 100000 Write/Erase Cycles | YES | YES | YES | 8 | 16K | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W800DB70ZE6E | STMicroelectronics | Datasheet | 46 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | NUMONYX | Numonyx Memory Solutions | M29W800DB70ZE6E | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Transferred | BGA | NOT SPECIFIED | 5.1 | Yes | 3 V | e1 | EAR99 | NOR TYPE | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 512KX16 | 1.2 mm | 16 | 0.0001 A | 8388608 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | YES | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No NMC27C16BQ150 | Rochester Electronics | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 150 ns | FAIRCHILD SEMICONDUCTOR CORP | Fairchild Semiconductor Corporation | NMC27C16BQ150 | 2048 words | 2000 | 70 °C | CERAMIC, GLASS-SEALED | WDIP | WDIP, DIP24,.6 | DIP24,.6 | RECTANGULAR | IN-LINE, WINDOW | Obsolete | DIP | 5.5 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | TTL COMPATIBLE INPUTS/OUTPUTS | 8542.32.00.61 | EPROMs | CMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 24 | R-GDIP-T24 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.02 mA | 2KX8 | 3-STATE | 5.969 mm | 8 | 0.0001 A | 16384 bit | PARALLEL | COMMON | UVPROM | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W160EB70N6E | STMicroelectronics | Datasheet | 4248 | - | Min: 1 Mult: 1 | Surface Mount | YES | 48 | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W160EB70N6E | NOR | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 7.56 | Compliant | Yes | 3 V | Bulk | e3 | Yes | EAR99 | NOR TYPE | Matte Tin (Sn) | 85 °C | -40 °C | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 70 GHz | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | Parallel | 3.6 V | 2.7 V | 2 MB | ASYNCHRONOUS | 0.02 mA | 70 ns | 16 b | 1MX16 | 1.2 mm | 16 | 0.0001 A | 16777216 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | BOTTOM | YES | 1 mm | 12 mm | 18.4 mm | No SVHC | Lead Free | |||||||||||||||||||||||||||||||||
| Mfr Part No N25Q256A13E1240F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 24 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q256A13E1240F | 268435456 words | 256000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA24,5X5,40 | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | NOT SPECIFIED | 5.74 | Yes | 3 V | e1 | Yes | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | R-PBGA-B24 | Not Qualified | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 256MX1 | 1.2 mm | 1 | 0.00025 A | 268435456 bit | SERIAL | FLASH | 3 V | SPI | 20 | HARDWARE/SOFTWARE | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W160ET70N6E | STMicroelectronics | Datasheet | 28822 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M29W160ET70N6E | NOR | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP | NOT SPECIFIED | 3.99 | Compliant | Yes | 3 V | Bulk | e3/e6 | EAR99 | NOR TYPE | TIN/TIN BISMUTH | 85 °C | -40 °C | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | Parallel | 3.6 V | 2.7 V | 2 MB | ASYNCHRONOUS | 0.02 mA | 70 ns | 16 b | 1MX16 | 1.2 mm | 16 | 0.0001 A | 16777216 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | TOP | YES | 18.4 mm | 12 mm | No SVHC | |||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W128GH70N6F | Micron | Datasheet | 25 | - | Min: 1 Mult: 1 | EOL (Last Updated: 2 years ago) | YES | 56 | 56 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M29W128GH70N6F | FLASH, NOR | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | 14 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-56 | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | TSOP | 40 | 5.34 | Compliant | Yes | 3 V | Tape & Reel | e3/e6 | 3A991.B.1.A | NOR TYPE | MATTE TIN/TIN BISMUTH | 85 °C | -40 °C | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 56 | R-PDSO-G56 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 3 V | Parallel | 3.6 V | 2.7 V | 10 mA | ASYNCHRONOUS | 0.02 mA | 70 ns | 8MX16 | 1.2 mm | 16 | 128 Mb | 0.0001 A | 134217728 bit | PARALLEL | Asynchronous | FLASH | 3 V | 8 | YES | YES | YES | 128 | 128K | 8/16 words | YES | YES | 18.4 mm | 14 mm | No | ||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W320DB70ZA6 | STMicroelectronics | Datasheet | 6912 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W320DB70ZA6 | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | 5.84 | No | 3 V | NOR TYPE | Flash Memories | CMOS | BOTTOM | BALL | 1 | 0.8 mm | not_compliant | R-PBGA-B48 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.2 mm | 16 | 0.0001 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,63 | 16K,8K,32K,64K | YES | BOTTOM | YES | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W800DB70N6E | STMicroelectronics | Datasheet | 836 | - | Min: 1 Mult: 1 | Surface Mount | YES | 48 | 48 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M29W800DB70N6E | NOR | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | TSOP | NOT SPECIFIED | 5.07 | Compliant | Yes | 3 V | Bulk | e3/e6 | EAR99 | NOR TYPE | TIN/TIN BISMUTH | 85 °C | -40 °C | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 70 GHz | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | Parallel | 3.6 V | 2.7 V | 1 MB | ASYNCHRONOUS | 0.02 mA | 70 ns | 16 b | 512KX16 | 1.2 mm | 16 | 8 Mb | 0.0001 A | 8388608 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | No SVHC | Lead Free | ||||||||||||||||||||||||||||||||||
| Mfr Part No M25P32-VMF6TPBA | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 16 | 75 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M25P32-VMF6TPBA | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.300 INCH, ROHS COMPLIANT, SOP-16 | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | NOT SPECIFIED | 5.38 | Yes | 3 V | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | R-PDSO-G16 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 4MX8 | 2.65 mm | 8 | 0.00001 A | 33554432 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 10.3 mm | 7.5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W160EB70ZS6F | Micron | Datasheet | 574 | - | Min: 1 Mult: 1 | YES | 64 | 70 ns | NUMONYX | Numonyx Memory Solutions | M29W160EB70ZS6F | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA64,8X8,40 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Transferred | BGA | NOT SPECIFIED | 5.16 | Yes | 3 V | EAR99 | NOR TYPE | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | unknown | 64 | R-PBGA-B64 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 1MX16 | 1.4 mm | 16 | 0.0001 A | 16777216 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | BOTTOM | YES | 13 mm | 11 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No NAND128W3AABN6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 35 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | NAND128W3AABN6F | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 7.73 | Yes | 3 V | e3 | Yes | 3A991.B.1.A | SLC NAND TYPE | Matte Tin (Sn) | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 16MX8 | 1.2 mm | 8 | 0.00005 A | 134217728 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 1K | 16K | 512 words | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W128GL70N3F | Micron | Datasheet | 204 | - | Min: 1 Mult: 1 | YES | 56 | 70 ns | NUMONYX | Numonyx Memory Solutions | M29W128GL70N3F | 8388608 words | 8000000 | 125 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP56,.8,20 | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | 5.78 | Yes | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 0.5 mm | unknown | R-PDSO-G56 | Not Qualified | 3/3.3 V | AUTOMOTIVE | 0.02 mA | 8MX16 | 16 | 0.0001 A | 134217728 bit | PARALLEL | FLASH | 8 | YES | YES | YES | 128 | 128K | 8/16 words | YES | YES |
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N25Q064A13EF640F
Micron
Package:Memory
Price: please inquire
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M29W128GL70N6F
Micron
Package:Memory
Price: please inquire
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M29W128GL70ZA6F
Micron
Package:Memory
Price: please inquire
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M29W640FB70ZA6E
STMicroelectronics
Package:Memory
Price: please inquire
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M29W320EB70ZE6F
Micron
Package:Memory
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M29W320DB70N6E
STMicroelectronics
Package:Memory
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M29W128GL70ZS3F
Micron
Package:Memory
2.983182
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M29F010B70K6F
STMicroelectronics
Package:Memory
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M29W800DB70ZE6E
STMicroelectronics
Package:Memory
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NMC27C16BQ150
Rochester Electronics
Package:Memory
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M29W160EB70N6E
STMicroelectronics
Package:Memory
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N25Q256A13E1240F
Micron
Package:Memory
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M29W160ET70N6E
STMicroelectronics
Package:Memory
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M29W128GH70N6F
Micron
Package:Memory
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M29W320DB70ZA6
STMicroelectronics
Package:Memory
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M29W800DB70N6E
STMicroelectronics
Package:Memory
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M25P32-VMF6TPBA
Micron
Package:Memory
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M29W160EB70ZS6F
Micron
Package:Memory
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NAND128W3AABN6F
Micron
Package:Memory
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M29W128GL70N3F
Micron
Package:Memory
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