The category is 'Memory'
Memory (197)
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- Ihs Manufacturer
- JESD-30 Code
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- Supply Current-Max:
0.02 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Lifecycle Status | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Address Bus | Cell Type | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Memory Types | Mounting | Number of Words | Number of Words Code | Operating Supply Voltage (Max) | Operating Supply Voltage (Min) | Operating Supply Voltage (Typ) | Operating Temp Range | Operating Temperature (Max.) | Operating Temperature (Min.) | Operating Temperature Classification | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Package Type | Part Life Cycle Code | Part Package Code | Programmable | Rad Hardened | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Schedule B | Supply Voltage-Nom (Vsup) | Usage Level | Packaging | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Interface | Max Supply Voltage | Min Supply Voltage | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Supply Current | Length | Width | Radiation Hardening |
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![]() | Mfr Part No M29W640GH70ZF6F | Micron | Datasheet | 10004 |
| Min: 1 Mult: 1 | EOL (Last Updated: 2 years ago) | YES | 64 | 64 | 70 ns | 23/22(b) | NOR | MICRON TECHNOLOGY INC | Parallel | Micron Technology Inc | M29W640GH70ZF6F | NOR | Surface Mount | 8M/4M | 4000000 | 3.6(V) | 2.7(V) | 3/3.3(V) | -40C to 85C | 85C | -40C | Industrial | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA64,8X8,40 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | TBGA | Obsolete | BGA | Yes | No | NOT SPECIFIED | 5.6 | Compliant | Yes | 8542320070, 8542320070/8542320070/8542320070/8542320070/8542320070 | 3 V | Tape and Reel | e1 | Yes | 3A991.B.1.A | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 64 | R-PBGA-B64 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | Parallel | 3.6 V | 2.7 V | 10 mA | ASYNCHRONOUS | 0.02 mA | 70 ns | 4MX16 | 1.2 mm | 16 | 67108864(Bit) | 0.0001 A | 67108864 bit | 70(ns) | PARALLEL | Asynchronous | 8/16(b) | FLASH | 3 V | 8 | YES | YES | YES | 128 | 64K | 4/8 words | YES | BOTTOM | YES | 10(mA) | 13 mm | 10 mm | No | |||||||||||||||
![]() | Mfr Part No M29W320DB7AN6F | Micron | Datasheet | 2912 |
| Min: 1 Mult: 1 | YES | 48 | 70 ns | 22/21(b) | NOR | MICRON TECHNOLOGY INC | Parallel | Micron Technology Inc | M29W320DB7AN6F | Surface Mount | 4M/2M | 2000000 | 3.6(V) | 2.7(V) | 3/3.3(V) | -40C to 85C | 85C | -40C | Industrial | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | TSOP | Obsolete | TSOP | Yes | No | NOT SPECIFIED | 7.77 | Yes | 3.3 V | Tape and Reel | e3 | Yes | 3A991.B.1.A | NOR TYPE | Matte Tin (Sn) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.2 mm | 16 | 33554432(Bit) | 0.0001 A | 33554432 bit | 70(ns) | PARALLEL | Asynchronous | 8/16(b) | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,63 | 16K,8K,32K,64K | YES | BOTTOM | YES | 10(mA) | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||
![]() | Mfr Part No N25Q128A11BF840F | Micron | Datasheet | 8313 | - | Min: 1 Mult: 1 | YES | 8 | 108 MHz | NUMONYX | Numonyx Memory Solutions | N25Q128A11BF840F | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SON | SON, SOLCC8,.3 | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE | Transferred | 5.78 | Yes | 1.8 V | NOR TYPE | Flash Memories | CMOS | DUAL | NO LEAD | 1.27 mm | unknown | R-PDSO-N8 | Not Qualified | 1.8 V | INDUSTRIAL | 0.02 mA | 16MX8 | 8 | 0.00001 A | 134217728 bit | SERIAL | FLASH | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25P128-VME6P | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 50 MHz | NUMONYX | Numonyx Memory Solutions | M25P128-VME6P | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | HVSON, SOLCC8,.3 | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Transferred | DFP | NOT SPECIFIED | 5.54 | Yes | 3 V | Yes | 3A991.B.1.A | NOR TYPE | MORE THAN 10000 ERASE/PROGRAM CYCLES MORE THAN 20-YEAR DATA RETENTION | 8542.32.00.51 | Flash Memories | CMOS | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | unknown | 8 | R-PDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 16MX8 | 1 mm | 8 | 0.0001 A | 134217728 bit | SERIAL | FLASH | 2.7 V | SPI | 10000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25P64-VME6TP | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 50 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M25P64-VME6TP | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SON | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE | Obsolete | 5.82 | Yes | NOR TYPE | Flash Memories | CMOS | DUAL | NO LEAD | 1.27 mm | compliant | R-PDSO-N8 | Not Qualified | 3/3.3 V | INDUSTRIAL | 0.02 mA | 8MX8 | 8 | 0.0001 A | 67108864 bit | SERIAL | FLASH | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No N25Q128A21BF840F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 108 MHz | NUMONYX | Numonyx Memory Solutions | N25Q128A21BF840F | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SON | SON, SOLCC8,.3 | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE | Transferred | 5.78 | Yes | 1.8 V | NOR TYPE | Flash Memories | CMOS | DUAL | NO LEAD | 1.27 mm | unknown | R-PDSO-N8 | Not Qualified | 1.8 V | INDUSTRIAL | 0.02 mA | 16MX8 | 8 | 0.00001 A | 134217728 bit | SERIAL | FLASH | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT29F2G08ABDHC-ET:D | Micron | Datasheet | 1600 | - | Min: 1 Mult: 1 | YES | 63 | 25 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT29F2G08ABDHCET:D | 268435456 words | 256000000 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | 5.82 | Yes | 1.8 V | SLC NAND TYPE | Flash Memories | CMOS | BOTTOM | BALL | 0.8 mm | unknown | R-PBGA-B63 | Not Qualified | 1.8 V | INDUSTRIAL | 0.02 mA | 256MX8 | 8 | 0.00005 A | 2147483648 bit | PARALLEL | FLASH | NO | NO | YES | 2K | 128K | 2K words | YES | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No N25Q128A11B1240E | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 24 | 24 | 108 MHz | NUMONYX | Numonyx Memory Solutions | N25Q128A11B1240E | NOR | 1.6777216e+07 | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA24,5X5,40 | BGA24,5X5,40 | SQUARE | GRID ARRAY | Transferred | 5.8 | Compliant | Yes | 1.8 V | NOR TYPE | 85 °C | -40 °C | Flash Memories | CMOS | BOTTOM | BALL | 1 mm | unknown | S-PBGA-B24 | Not Qualified | 1.8 V | 1.8 V | INDUSTRIAL | SPI, Serial | 2 V | 1.7 V | 20 mA | 0.02 mA | 7 ns | 16MX8 | 8 | 1 b | 128 Mb | 0.00001 A | 134217728 bit | SERIAL | Synchronous | 8 b | FLASH | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256 B | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No N25Q032A13EF840F | Micron | Datasheet | 47 | - | Min: 1 Mult: 1 | YES | 8 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q032A13EF840F | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | HVSON, SOLCC8,.3 | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Obsolete | 5.8 | Yes | 3 V | NOR TYPE | Flash Memories | CMOS | DUAL | NO LEAD | 1 | 1.27 mm | unknown | R-PDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 4MX8 | 1 mm | 8 | 0.0001 A | 33554432 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NAND256W3A2BN6F | Micron | Datasheet | 4416 | - | Min: 1 Mult: 1 | YES | 48 | 12000 ns | STMICROELECTRONICS | STMicroelectronics | NAND256W3A2BN6F | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP | NOT SPECIFIED | 5.35 | Yes | 3 V | e3/e6 | 3A991.B.1.A | SLC NAND TYPE | TIN/TIN BISMUTH | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 32MX8 | 1.2 mm | 8 | 0.00005 A | 268435456 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 2K | 16K | 512 words | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No N25Q128A21BSF40F | Micron | Datasheet | 4 | - | Min: 1 Mult: 1 | YES | 16 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A21BSF40F | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP16,.4 | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | Active | 5.68 | Yes | 1.8 V | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 1.27 mm | compliant | R-PDSO-G16 | Not Qualified | 1.8 V | INDUSTRIAL | 0.02 mA | 16MX8 | 8 | 0.00001 A | 134217728 bit | SERIAL | FLASH | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M29W160FT70N3E | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W160FT70N3E | 1048576 words | 1000000 | 125 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | 30 | 5.66 | Yes | 3 V | Automotive grade | e3 | NOR TYPE | MATTE TIN | TOP BOOT BLOCK | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | AUTOMOTIVE | 2.7 V | ASYNCHRONOUS | 0.02 mA | 1MX16 | 1.2 mm | 16 | 0.0001 A | 16777216 bit | AEC-Q100 | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | TOP | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No N25Q128A11BF840E | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 108 MHz | NUMONYX | Numonyx Memory Solutions | N25Q128A11BF840E | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SON | SON, SOLCC8,.3 | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE | Transferred | 5.8 | Yes | 1.8 V | NOR TYPE | Flash Memories | CMOS | DUAL | NO LEAD | 1.27 mm | unknown | R-PDSO-N8 | Not Qualified | 1.8 V | INDUSTRIAL | 0.02 mA | 16MX8 | 8 | 0.00001 A | 134217728 bit | SERIAL | FLASH | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M29W320FT70N3E | Micron | Datasheet | 4 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M29W320FT70N3E | 2097152 words | 2000000 | 125 °C | -40 °C | PLASTIC/EPOXY | TSSOP | 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | TSOP | 40 | 7.48 | Yes | 3 V | e3/e6 | 3A991.B.1.A | NOR TYPE | TIN/TIN BISMUTH | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | AUTOMOTIVE | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.2 mm | 16 | 0.0001 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,63 | 16K,8K,32K,64K | YES | TOP | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No N25Q128A11TSF40F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 16 | 108 MHz | NUMONYX | Numonyx Memory Solutions | N25Q128A11TSF40F | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP16,.4 | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | Transferred | 5.79 | Yes | 1.8 V | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 1.27 mm | unknown | R-PDSO-G16 | Not Qualified | 1.8 V | INDUSTRIAL | 0.02 mA | 16MX8 | 8 | 0.00001 A | 134217728 bit | SERIAL | FLASH | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No N25Q064A13EF8H0F | Micron | Datasheet | 1596 | - | Min: 1 Mult: 1 | Obsolete (Last Updated: 2 years ago) | YES | 8 | 8 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q064A13EF8H0F | NOR | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | 8 X 6 MM, ROHS COMPLIANT, PLASTIC, VDFN-8 | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Obsolete | 30 | 5.75 | Compliant | Yes | 3 V | Tape & Reel | Yes | NOR TYPE | 85 °C | -40 °C | Flash Memories | CMOS | DUAL | NO LEAD | 260 | 1 | 1.27 mm | compliant | 108 MHz | R-PDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | SPI, Serial | 3.6 V | 2.7 V | SYNCHRONOUS | 0.02 mA | 64MX1 | 1 mm | 1 | 1 b | 64 Mb | 0.0001 A | 67108864 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256 B | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT45W1ML16PAFA-85WT | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 85 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT45W1ML16PAFA-85WT | 1048576 words | 1000000 | 85 °C | -25 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.92 | No | 1.8 V | e0 | No | 3A991.B.2.A | TIN LEAD SILVER | 8542.32.00.41 | Other Memory ICs | CMOS | BOTTOM | BALL | 235 | 1 | 0.75 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 1.95 V | 1.8,1.8/3 V | OTHER | 1.7 V | ASYNCHRONOUS | 0.02 mA | 1MX16 | 3-STATE | 1 mm | 16 | 0.00007 A | 16777216 bit | PARALLEL | COMMON | PSEUDO STATIC RAM | 1.7 V | 8 mm | 6 mm |
M29W640GH70ZF6F
Micron
Package:Memory
6.284815
M29W320DB7AN6F
Micron
Package:Memory
2.764848
N25Q128A11BF840F
Micron
Package:Memory
Price: please inquire
M25P128-VME6P
Micron
Package:Memory
Price: please inquire
M25P64-VME6TP
Micron
Package:Memory
Price: please inquire
N25Q128A21BF840F
Micron
Package:Memory
Price: please inquire
MT29F2G08ABDHC-ET:D
Micron
Package:Memory
Price: please inquire
N25Q128A11B1240E
Micron
Package:Memory
Price: please inquire
N25Q032A13EF840F
Micron
Package:Memory
Price: please inquire
NAND256W3A2BN6F
Micron
Package:Memory
Price: please inquire
N25Q128A21BSF40F
Micron
Package:Memory
Price: please inquire
M29W160FT70N3E
Micron
Package:Memory
Price: please inquire
N25Q128A11BF840E
Micron
Package:Memory
Price: please inquire
M29W320FT70N3E
Micron
Package:Memory
Price: please inquire
N25Q128A11TSF40F
Micron
Package:Memory
Price: please inquire
N25Q064A13EF8H0F
Micron
Package:Memory
Price: please inquire
MT45W1ML16PAFA-85WT
Micron
Package:Memory
Price: please inquire
