The category is 'Memory'
Memory (197)
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- JESD-30 Code
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- Number of Words Code
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- Supply Current-Max:
0.02 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Lifecycle Status | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Samacsys Description | Supply Voltage-Nom (Vsup) | Usage Level | Packaging | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Length | Width | Radiation Hardening |
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 | Mfr Part No M25P128-VMF6G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 16 | 54 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M25P128-VMF6G | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOP-16 | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 30 | 5.62 | Yes | 3 V | Yes | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 16 | R-PDSO-G16 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 16MX8 | 2.65 mm | 8 | 0.0001 A | 134217728 bit | SERIAL | FLASH | 2.7 V | SPI | 10000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 10.3 mm | 7.5 mm | ||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W400DT45ZE6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 45 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W400DT45ZE6F | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA-48 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.82 | Yes | 3.3 V | e1 | Yes | NOR TYPE | TIN SILVER COPPER | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.02 mA | 256KX16 | 1.2 mm | 16 | 0.0001 A | 4194304 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | TOP | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W128GH7AN6F | Micron | Datasheet | 16000 | - | Min: 1 Mult: 1 | YES | 56 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W128GH7AN6F | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP56,.8,20 | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | NOT SPECIFIED | 5.47 | Yes | 3 V | Automotive grade | e3 | Yes | 3A991.B.1.A | NOR TYPE | Matte Tin (Sn) | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | compliant | 56 | R-PDSO-G56 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 8KX16 | 1.2 mm | 16 | 0.0001 A | 131072 bit | AEC-Q100 | PARALLEL | FLASH | 3 V | 0.00007 ms | 8 | YES | YES | YES | 128 | 128K | 8/16 words | YES | YES | 18.4 mm | 14 mm | ||||||||||||||||||||||||||||||||||
| Mfr Part No M25P32-VME6TG | Micron | Datasheet | 3200 | - | Min: 1 Mult: 1 | YES | 8 | 50 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M25P32-VME6TG | 3 | 4194304 words | 4000000 | 85 °C | -40 °C | UNSPECIFIED | HVSON | 8 X 6 MM, ROHS COMPLIANT, MLP-8 | SOLCC8,.24 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Obsolete | SOIC | 30 | 5.34 | Yes | 3 V | e4 | Yes | 3A991.B.1.A | NOR TYPE | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.51 | Flash Memories | CMOS | DUAL | NO LEAD | 260 | 1 | 1.27 mm | compliant | 8 | R-XDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 4MX8 | TOTEM POLE | 1 mm | 8 | 0.00005 A | 33554432 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q032A13ESF40F | Micron | Datasheet | 1980 |
| Min: 1 Mult: 1 | YES | 16 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q032A13ESF40F | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOP2-16 | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | 30 | 8 | Yes | 3 V | Yes | NOR TYPE | ALSO CAN BE ORGANISED AS 32M X 1 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | R-PDSO-G16 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 8MX4 | 2.65 mm | 4 | 0.0001 A | 33554432 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 10.3 mm | 7.5 mm | ||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q128A11ESF40F | Micron | Datasheet | 44 | - | Min: 1 Mult: 1 | YES | 16 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A11ESF40F | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP16,.4 | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | 30 | 5.59 | Yes | 1.8 V | Yes | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | R-PDSO-G16 | Not Qualified | 2 V | 1.8 V | INDUSTRIAL | 1.7 V | SYNCHRONOUS | 0.02 mA | 128MX1 | 2.65 mm | 1 | 0.00001 A | 134217728 bit | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 10.3 mm | 7.5 mm | ||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT29F2G08ABDHC:D | Micron | Datasheet | 5 | - | Min: 1 Mult: 1 | YES | 63 | 25 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT29F2G08ABDHC:D | 268435456 words | 256000000 | 70 °C | PLASTIC/EPOXY | FBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | 5.81 | Yes | 1.8 V | SLC NAND TYPE | Flash Memories | CMOS | BOTTOM | BALL | 0.8 mm | unknown | R-PBGA-B63 | Not Qualified | 1.8 V | COMMERCIAL | 0.02 mA | 256MX8 | 8 | 0.00005 A | 2147483648 bit | PARALLEL | FLASH | NO | NO | YES | 2K | 128K | 2K words | YES | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W800AT-120N6 | STMicroelectronics | Datasheet | 153 | - | Min: 1 Mult: 1 | YES | 48 | 120 ns | STMICROELECTRONICS | STMicroelectronics | M29W800AT120N6 | FLASH, NOR | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP | NOT SPECIFIED | 5.18 | Non-Compliant | No | 3 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | 20 YEARS DATA RETENTION; TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | not_compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | Parallel | 3.6 V | 2.7 V | 1 MB | ASYNCHRONOUS | 0.02 mA | 16 b | 512KX16 | 1.2 mm | 16 | 0.0001 A | 8388608 bit | PARALLEL | FLASH | 2.7 V | 100000 Write/Erase Cycles | 20 | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | TOP | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||
| Mfr Part No N25Q128A13E1240F | Micron | Datasheet | 23 | - | Min: 1 Mult: 1 | YES | 24 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A13E1240F | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA24,5X5,40 | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | 30 | 5.73 | Yes | 3 V | e1 | Yes | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | R-PBGA-B24 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 128MX1 | 1.2 mm | 1 | 0.0001 A | 134217728 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q256A13ESFA0F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | EOL (Last Updated: 2 years ago) | YES | 16 | 16 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q256A13ESFA0F | FLASH, NOR | 268435456 words | 256000000 | 125 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP16,.4 | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | NOT SPECIFIED | 5.74 | Compliant | Yes | 3 V | Tape & Reel | Yes | 3A991 | NOR TYPE | 125 °C | -40 °C | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 108 MHz | R-PDSO-G16 | Not Qualified | 3.6 V | 3/3.3 V | AUTOMOTIVE | 2.7 V | 2.7 V | SPI, Serial | 3.6 V | 2.7 V | 20 mA | SYNCHRONOUS | 0.02 mA | 8 ns | 256MX1 | 2.65 mm | 1 | 25 b | 256 Mb | 0.0001 A | 268435456 bit | SERIAL | Synchronous | 8 b | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256 B | 10.3 mm | 7.5 mm | No | ||||||||||||||||||||||||||
| Mfr Part No N25Q064A13ESE40F | Micron | Datasheet | 160000 | - | Min: 1 Mult: 1 | YES | 8 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q064A13ESE40F | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | SQUARE | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 7.94 | Yes | Serial Flash 64 Mbit SPI 3V SO8W N25Q064A13ESE40F, Serial-SPI NOR Flash Memory, 8M x 8 bit 64Mbit, 7ns, 2.7 u2192 3.6 V, 8-Pin, SOIC W | 3 V | Yes | 3A991 | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 8 | S-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 1MX64 | 2.16 mm | 64 | 0.0001 A | 67108864 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 5.285 mm | 5.285 mm | |||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q128A13ESFA0F | Micron | Datasheet | 69 | - | Min: 1 Mult: 1 | EOL (Last Updated: 2 years ago) | YES | 16 | 16 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A13ESFA0F | NOR | 1.6777216e+07 | 128000000 | 125 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP16,.4 | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | NOT SPECIFIED | 5.73 | Compliant | Yes | 3 V | Tape & Reel | Yes | NOR TYPE | 125 °C | -40 °C | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 108 MHz | R-PDSO-G16 | Not Qualified | 3.6 V | 3/3.3 V | AUTOMOTIVE | 2.7 V | 2.7 V | SPI, Serial | 3.6 V | 2.7 V | 20 mA | SYNCHRONOUS | 0.02 mA | 7 ns | 128MX1 | 2.65 mm | 1 | 24 b | 128 Mb | 0.0001 A | 134217728 bit | SERIAL | Synchronous | 8 b | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256 B | 10.3 mm | 7.5 mm | No | ||||||||||||||||||||||||||||
| Mfr Part No M29W640FT70N6E | STMicroelectronics | Datasheet | 36 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W640FT70N6E | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | 30 | 5.49 | Yes | 3 V | e3 | Yes | 3A991.B.1.A | NOR TYPE | Matte Tin (Sn) | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 4MX16 | 1.2 mm | 16 | 0.0001 A | 67108864 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 8,127 | 8K,64K | 4/8 words | YES | TOP | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q00AA13G1240F | Micron | Datasheet | 6814 | - | Min: 1 Mult: 1 | EOL (Last Updated: 2 years ago) | Surface Mount | YES | 24 | 24 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q00AA13G1240F | NOR | 1073741824 words | 1000000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA24,5X5,40 | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | 30 | 5.81 | Compliant | Yes | 3 V | Tape & Reel | e1 | Yes | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 108 MHz | R-PBGA-B24 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | SPI, Serial | 3.6 V | 2.7 V | 20 mA | SYNCHRONOUS | 0.02 mA | 9 ns | 1GX1 | 1.3 mm | 1 | 1 b | 1 Gb | 0.0002 A | 1073741824 bit | SERIAL | Synchronous | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256 B | 8 mm | 6 mm | No | ||||||||||||||||||||||||||
| Mfr Part No M28W320FCT70ZB6F | Micron | Datasheet | 7504 | - | Min: 1 Mult: 1 | YES | 47 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M28W320FCT70ZB6F | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA47,6X8,30 | BGA47,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 5.8 | Yes | 3 V | e1 | Yes | 3A991.B.1.A | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.75 mm | compliant | 47 | R-PBGA-B47 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.2 mm | 16 | 0.000005 A | 33554432 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 8,63 | 4K,32K | TOP | YES | 6.39 mm | 6.37 mm | ||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q064A13E1240F | Micron | Datasheet | 3992 | - | Min: 1 Mult: 1 | YES | 24 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q064A13E1240F | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA24,5X5,40 | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | 30 | 5.74 | Yes | 3 V | e1 | Yes | 3A991.B.1.A | NOR TYPE | TIN SILVER COPPER | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 24 | R-PBGA-B24 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 1MX64 | 1.2 mm | 64 | 0.0001 A | 67108864 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29F040B90K6 | STMicroelectronics | Datasheet | 276 | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M29F040B90K6 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Transferred | QFJ | NOT SPECIFIED | 5.13 | No | 5 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | 8542.32.00.51 | Flash Memories | CMOS | QUAD | J BEND | NOT SPECIFIED | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.02 mA | 512KX8 | 3.56 mm | 8 | 0.0001 A | 4194304 bit | PARALLEL | FLASH | 5 V | 100000 Write/Erase Cycles | YES | YES | YES | 8 | 64K | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q256A11ESF40F | Micron | Datasheet | 4 | - | Min: 1 Mult: 1 | EOL (Last Updated: 2 years ago) | YES | 16 | 16 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q256A11ESF40F | NOR | 268435456 words | 256000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP16,.4 | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | NOT SPECIFIED | 5.73 | Compliant | Yes | 1.8 V | Tape & Reel | Yes | NOR TYPE | 85 °C | -40 °C | SPI-COMPATIBLE SERIAL BUS INTERFACE | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 108 MHz | R-PDSO-G16 | Not Qualified | 1.8 V | 2 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.7 V | SPI, Serial | 2 V | 1.7 V | 20 mA | SYNCHRONOUS | 0.02 mA | 8 ns | 256MX1 | 2.5 mm | 1 | 1 b | 256 Mb | 0.00002 A | 268435456 bit | SERIAL | Synchronous | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256 B | 10.3 mm | 7.5 mm | No | |||||||||||||||||||||||||||
| Mfr Part No N25Q064A13EF840F | Micron | Datasheet | 2273 | - | Min: 1 Mult: 1 | YES | 8 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q064A13EF840F | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSON | 8 X 6 MM, ROHS COMPLIANT, PLASTIC, VDFN-8 | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | Obsolete | DFN | 30 | 7.94 | Yes | 3 V | e4 | Yes | 3A991.B.1.A | NOR TYPE | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.51 | Flash Memories | CMOS | DUAL | NO LEAD | 260 | 1 | 1.27 mm | compliant | 8 | R-PDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 1MX64 | 1 mm | 64 | 0.0001 A | 67108864 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W128GH70ZS6F | Micron | Datasheet | 46080 | - | Min: 1 Mult: 1 | YES | 64 | 70 ns | NUMONYX | Numonyx Memory Solutions | M29W128GH70ZS6F | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA64,8X8,40 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY | Transferred | BGA | NOT SPECIFIED | 5.28 | Yes | 3 V | 3A991.B.1.A | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | unknown | 64 | R-PBGA-B64 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 8MX16 | 1.4 mm | 16 | 0.0001 A | 134217728 bit | PARALLEL | FLASH | 3 V | 0.00007 ms | 8 | YES | YES | YES | 128 | 128K | 8/16 words | YES | YES | 13 mm | 11 mm |
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M25P128-VMF6G
Micron
Package:Memory
Price: please inquire
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M29W400DT45ZE6F
Micron
Package:Memory
Price: please inquire
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M29W128GH7AN6F
Micron
Package:Memory
Price: please inquire
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M25P32-VME6TG
Micron
Package:Memory
Price: please inquire
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N25Q032A13ESF40F
Micron
Package:Memory
1.700991
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N25Q128A11ESF40F
Micron
Package:Memory
Price: please inquire
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MT29F2G08ABDHC:D
Micron
Package:Memory
Price: please inquire
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M29W800AT-120N6
STMicroelectronics
Package:Memory
Price: please inquire
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N25Q128A13E1240F
Micron
Package:Memory
Price: please inquire
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N25Q256A13ESFA0F
Micron
Package:Memory
Price: please inquire
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N25Q064A13ESE40F
Micron
Package:Memory
Price: please inquire
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N25Q128A13ESFA0F
Micron
Package:Memory
Price: please inquire
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M29W640FT70N6E
STMicroelectronics
Package:Memory
Price: please inquire
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N25Q00AA13G1240F
Micron
Package:Memory
Price: please inquire
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M28W320FCT70ZB6F
Micron
Package:Memory
Price: please inquire
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N25Q064A13E1240F
Micron
Package:Memory
Price: please inquire
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M29F040B90K6
STMicroelectronics
Package:Memory
Price: please inquire
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N25Q256A11ESF40F
Micron
Package:Memory
Price: please inquire
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N25Q064A13EF840F
Micron
Package:Memory
Price: please inquire
-
M29W128GH70ZS6F
Micron
Package:Memory
Price: please inquire