The category is 'Memory'
Memory (197)
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- JESD-30 Code
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- Supply Current-Max:
0.02 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Surface Mount Land Size | Access Time-Max | Active Read Current - Max | Base Product Number | Block Organization | Brand | Cell Type | Clock Frequency-Max (fCLK) | Concurrent Operation | Default Read Mode | Degree of protection (IP) | Dimensions | DTR | Factory Pack QuantityFactory Pack Quantity | I/O | Ihs Manufacturer | Interface Type | Lead Free Status / RoHS Status | Lifetime @ Temp. | Manufacturer | Manufacturer Part Number | Material housing | Maximum Clock Frequency | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | MSL | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Samacsys Description | Schedule B | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Type of electric connection | Typical Operating Supply Voltage | Usage Level | Voltage Rated | Operating Temperature | Packaging | Series | Size / Dimension | Tolerance | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Applications | Additional Feature | HTS Code | Capacitance | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Base Part Number | Pin Count | JESD-30 Code | Function | Number of Outputs | Qualification Status | Output Type | ESR (Equivalent Series Resistance) | Lead Spacing | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Note | Programmable Type | Voltage | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Nominal Supply Current | Output Configuration | Ripple Current @ Low Frequency | Operating Mode | Voltage - Supply (Vcc/Vdd) | Ripple Current @ High Frequency | Clock Frequency | Supply Current-Max | Control Features | Access Time | Topology | Memory Format | Memory Interface | Architecture | Data Bus Width | Frequency - Switching | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Synchronous Rectifier | Resolution | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Output Format | Programming Voltage | Duty Cycle (Max) | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Serial Interfaces | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Clock Sync | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Output Phases | Product Category | Temperature | Memory Organization | Height Seated (Max) | Length | Width | Radiation Hardening | Lead Free | Ratings |
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 | Mfr Part No M29W640GB70ZA6F | Micron | Datasheet | 2000 | - | Min: 1 Mult: 1 | EOL (Last Updated: 2 years ago) | YES | 48 | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W640GB70ZA6F | FLASH, NOR | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 7.63 | Compliant | Yes | 8542320070 | 3 V | Tape & Reel | e1 | Yes | 3A991.B.1.A | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | Parallel | 3.6 V | 2.7 V | 10 mA | ASYNCHRONOUS | 0.02 mA | 70 ns | 4MX16 | 1.2 mm | 16 | 64 Mb | 0.0001 A | 67108864 bit | PARALLEL | Asynchronous | FLASH | 3 V | 8 | YES | YES | YES | 8,127 | 8K,64K | 4/8 words | YES | BOTTOM | YES | 8 mm | 6 mm | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W320ET70N6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | NUMONYX | Numonyx Memory Solutions | M29W320ET70N6F | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | TSOP | 5.11 | Yes | 3 V | 3A991.B.1.A | NOR TYPE | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.2 mm | 16 | 0.0001 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | TOP | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT45DB021D-SSU | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 66 MHz | ATMEL CORP | Atmel Corporation | AT45DB021D-SSU | NOR | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.150 INCH, GREEN, PLASTIC, MS-012AA, SOIC-8 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 5.73 | Compliant | Yes | 3 V | EAR99 | NOR TYPE | 85 °C | -40 °C | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 1.27 mm | unknown | 66 MHz | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SPI | 3.6 V | 2.7 V | 256 kB | SYNCHRONOUS | 0.02 mA | 8 b | 2MX1 | 1.75 mm | 1 | 0.00001 A | 2097152 bit | 66 MHz | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 4.925 mm | 3.9 mm | Lead Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q128A11ESE40F | Micron | Datasheet | 2124 | - | Min: 1 Mult: 1 | YES | 8 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A11ESE40F | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | SQUARE | SMALL OUTLINE | Obsolete | 30 | 7.91 | Yes | 1.8 V | e3 | Yes | NOR TYPE | Matte Tin (Sn) | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | S-PDSO-G8 | Not Qualified | 2 V | 1.8 V | INDUSTRIAL | 1.7 V | SYNCHRONOUS | 0.02 mA | 128MX1 | 2.16 mm | 1 | 0.00001 A | 134217728 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 5.285 mm | 5.285 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W640FB70ZA6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | EOL (Last Updated: 2 years ago) | YES | 48 | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W640FB70ZA6F | NOR | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 7.59 | Compliant | Yes | 3 V | Tape & Reel | e1 | Yes | 3A991.B.1.A | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | Parallel | 3.6 V | 2.7 V | 10 mA | ASYNCHRONOUS | 0.02 mA | 70 ns | 4MX16 | 1.2 mm | 16 | 64 Mb | 0.0001 A | 67108864 bit | PARALLEL | Asynchronous | FLASH | 3 V | 8 | YES | YES | YES | 8,127 | 8K,64K | 4/8 words | YES | BOTTOM | YES | 8 mm | 6 mm | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W320DB7AZA6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 63 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W320DB7AZA6F | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 5.62 | Yes | 3.3 V | e1 | Yes | 3A991.B.1.A | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | 63 | R-PBGA-B63 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.2 mm | 16 | 0.0001 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,63 | 16K,8K,32K,64K | YES | BOTTOM | YES | 11 mm | 7 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 27C128-15/P | Rochester Electronics | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 150 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | 27C128-15/P | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | DIP | 0.600 INCH, PLASTIC, DIP-28 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 8.54 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | OTP ROMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.02 mA | 16KX8 | 3-STATE | 4.83 mm | 8 | 0.0001 A | 131072 bit | PARALLEL | COMMON | OTP ROM | 13 V | 36.32 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q032A13ESC40G | Alliance Memory | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | Radial, Can | YES | 8-SO | 8 | -- | 20 mA | N25Q032A13 | Symmetrical | Alliance Memory | NOR | 108 MHz | 2000 | MICRON TECHNOLOGY INC | SPI | -- | 2000 Hrs @ 105°C | Alliance Memory | N25Q032A13ESC40G | 108 MHz | 3.6 V | + 125 C | Non-Volatile | Alliance Memory, Inc. | 2.7 V | - 40 C | Yes | Surface Mount | SMD/SMT | 32/16/8 Mbit | 32000000 | 85 °C | -40 °C | Tube | PLASTIC/EPOXY | SOP | SOP, SOP8,.24 | SOP8,.24 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | Active | NOT SPECIFIED | 8 | Yes | Flash Memory 32Mb SPI,3V,108MHz,SO8 N25Q032A13ESC40G, Serial-SPI NOR Flash Memory, 4M x 8 bit 32Mbit, 5ns, 2.7 | SOP2 | 3.6 V | 2.7 V | 3 V | Synchronous | 3 V | Industrial grade | 16V | -55°C ~ 105°C | Bulk | ULG | 0.394 Dia (10.00mm) | ±20% | Yes | Active | -- | EAR99 | Polymer | Decoupling | 8542.32.00.51 | 330µF | Memory & Data Storage | FLASH - NOR | 2.7V ~ 3.6V | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | Not Qualified | 600 mOhm | 0.197 (5.00mm) | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 32Mbit | 252.5mA @ 120Hz | SYNCHRONOUS | 5.05A @ 100kHz | 108 MHz | 0.02 mA | FLASH | SPI | Sectored | 8 bit | 4M x 8 | 3-STATE | 1.75 mm | 1 | 5ms | NOR Flash | 32 Mbit | 0.0001 A | 33554432 bit | Industrial | SERIAL | FLASH | 2.7 to 3.6 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | Yes | NOR Flash | 8M x 4 | 0.551 (14.00mm) | 4.9 mm | 3.9 mm | -- | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q064A13EF640E | Alliance Memory | Datasheet | 1660 |
| Min: 1 Mult: 1 | Surface Mount | 8-VDFN Exposed Pad | YES | 8-VDFPN (MLP8) (8x6) | 8 | 20 mA | N25Q064A13 | Alliance Memory | 108 MHz | 490 | MICRON TECHNOLOGY INC | SPI | Alliance Memory | N25Q064A13EF640E | 108 MHz | + 125 C | Non-Volatile | Alliance Memory, Inc. | - 40 C | Yes | SMD/SMT | 1048576 words | 1000000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | VSON | VSON, SOLCC8,.25 | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | Obsolete | DFN | Active | NOT SPECIFIED | 7.95 | Yes | 2 V | 1.7 V | 3 V | Synchronous | -40°C ~ 85°C (TA) | Tray | - | Yes | 3A991.B.1.A | NOR TYPE | 8542.32.00.51 | Memory & Data Storage | FLASH - NOR | 2.7V ~ 3.6V | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | compliant | 8 | R-PDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 64Mbit | SYNCHRONOUS | 108 MHz | 0.02 mA | FLASH | SPI | 8 bit | 8 M x 8 | 0.9 mm | 64 | 5ms | NOR Flash | 0.0001 A | 67108864 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | NOR Flash | 16M x 4 | 6 mm | 5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No W25Q20EWSVIG | Winbond | Datasheet | 760000 | - | Min: 1 Mult: 1 | Surface Mount | VSOP-8 | YES | 8-VSOP | 8 | 20 mA | W25Q20 | Winbond | 104 MHz | No | Buffer | 150mil | No | 1600 | x1/x2/x4 | WINBOND ELECTRONICS CORP | SPI | Winbond | W25Q20EWSVIG | 104 MHz | + 85 C | Non-Volatile | PEI-Genesis | - 40 C | Yes | SMD/SMT | 2097152 words | 2000000 | 85 °C | -40 °C | Bulk | PLASTIC/EPOXY | VSOP | VSOP-8 | TSOP8,.25 | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | Active | Active | NOT SPECIFIED | 5.71 | Details | Yes | 1.95 V | 1.65 V | 1.8 V | Synchronous | SpiFlash | -40°C ~ 85°C (TA) | * | NOR TYPE | Memory & Data Storage | FLASH - NOR | 1.65V ~ 1.95V | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 104MHz | R-PDSO-G8 | Not Qualified | 1.95 V | 1.8 V | INDUSTRIAL | 1.65 V | 1.65 ~ 1.95V | 2 Mbit | SYNCHRONOUS | 104 MHz | 0.02 mA | 6 ns | FLASH | SPI - Quad I/O | 8 bit | 256 k x 8 | 0.9 mm | 1 | 30µs, 800µs | NOR Flash | 2Mb | 0.0000075 A | 2097152 bit | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | NOR Flash | -40~+85˚C | 256K x 8 | 4.9 mm | 3.9 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W160DB90N6 | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 90 ns | STMICROELECTRONICS | STMicroelectronics | M29W160DB90N6 | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | 12 X 20 MM, PLASTIC, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP | 8.29 | No | 3 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | not_compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 1MX16 | 1.2 mm | 16 | 0.0001 A | 16777216 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q128A13E12A0F | Micron Technology | Datasheet | 561 | - | Min: 1 Mult: 1 | EOL (Last Updated: 2 years ago) | Copper, Silver, Tin | Surface Mount | YES | 24 | 24 | FR9TC55B | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A13E12A0F | NOR | Panduit Corp | 1.6777216e+07 | 128000000 | 125 °C | -40 °C | Bulk | PLASTIC/EPOXY | TBGA | TBGA, BGA24,5X5,40 | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | Active | NOT SPECIFIED | 5.73 | Compliant | Yes | 3 V | Tape & Reel | * | e1 | Yes | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | 125 °C | -40 °C | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 108 MHz | R-PBGA-B24 | Not Qualified | 3.6 V | 3/3.3 V | AUTOMOTIVE | 2.7 V | 2.7 V | SPI, Serial | 3.6 V | 2.7 V | 20 mA | SYNCHRONOUS | 0.02 mA | 7 ns | 128MX1 | 1.2 mm | 1 | 24 b | 128 Mb | 0.0001 A | 134217728 bit | SERIAL | Synchronous | 8 b | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256 B | 8 mm | 6 mm | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q128A13EF8A0F | Micron Technology | Datasheet | 160000 | - | Min: 1 Mult: 1 | YES | 8 | CTS Electronic Components | 108 MHz | 3000 | MICRON TECHNOLOGY INC | CTS | N25Q128A13EF8A0F | 134217728 words | 128000000 | 125 °C | -40 °C | PLASTIC/EPOXY | HVSON | HVSON, SOLCC8,.3 | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Obsolete | NOT SPECIFIED | 5.73 | Details | Yes | 3 V | Reel | 520 | Yes | NOR TYPE | Oscillators | CMOS | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | compliant | R-PDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | AUTOMOTIVE | 2.7 V | SYNCHRONOUS | 0.02 mA | 128MX1 | 1 mm | 1 | TCXO | 0.0001 A | 134217728 bit | SERIAL | FLASH | Clipped Sine Wave | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | TCXO Oscillators | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS25LQ080-JBLE | ISSI | Datasheet | 4000 | - | Min: 1 Mult: 1 | SMD | YES | 8 | 104 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS25LQ080-JBLE | 1 | 8388608 words | 8000000 | 105 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | SQUARE | SMALL OUTLINE | Obsolete | 5.82 | Yes | Yes | LTC26xx | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 1 | 1.27 mm | compliant | S-PDSO-G8 | Not Qualified | 3.6 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | - | SYNCHRONOUS | 0.02 mA | 8MX1 | 2.16 mm | 1 | 14bit | 0.00003 A | 8388608 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 5.28 mm | 5.28 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY621472EV30LL-45ZSXI | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | 1 Week | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | YES | 44-TSOP II | 44 | 45 ns | CY621472 | IP67 | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY621472EV30LL-45ZSXI | Plastic | Volatile | Infineon Technologies | 262144 words | 256000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Obsolete | 5.81 | Yes | 3 V | Cable with connector | -40°C ~ 85°C (TA) | MoBL® | 3A991.B.2.A | 8542.32.00.41 | SRAMs | SRAM - Asynchronous | 2.2V ~ 3.6V | DUAL | GULL WING | 1 | 0.8 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 2.5/3.3 V | INDUSTRIAL | 2.2 V | 4Mbit | ASYNCHRONOUS | 0.02 mA | 45 ns | SRAM | Parallel | 256KX16 | 3-STATE | 1.194 mm | 16 | 45ns | 0.000007 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | 256K x 16 | 18.415 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q064A13E14D0F | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 24 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q064A13E14D0F | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA24,4X6,40 | BGA24,4X6,40 | RECTANGULAR | GRID ARRAY | Active | 5.79 | Yes | NOR TYPE | Flash Memories | CMOS | BOTTOM | BALL | 1 mm | compliant | R-PBGA-B24 | Not Qualified | 3/3.3 V | INDUSTRIAL | 0.02 mA | 8MX8 | 8 | 0.0001 A | 67108864 bit | SERIAL | FLASH | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29F200BB70N6 | Macronix | Datasheet | - | - | Min: 1 Mult: 1 | 16-SOIC (0.154, 3.90mm Width) | YES | 16-SOIC | 48 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M29F200BB70N6 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | 12 X 20 MM, PLASTIC, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | TSOP | NOT SPECIFIED | 5.15 | Yes | 5 V | -40°C ~ 105°C (TA) | Tube | -- | e0 | Obsolete | EAR99 | NOR TYPE | TIN LEAD | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | ISL6723A | 48 | R-PDSO-G48 | Step-Up, Step-Up/Step-Down | 1 | Not Qualified | Transistor Driver | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | Positive, Isolation Capable | ASYNCHRONOUS | 9 V ~ 18 V | 0.02 mA | Current Limit, Frequency Control, Soft Start | Boost, Flyback | Up to 1MHz | 128KX16 | 1.2 mm | 16 | No | 0.0001 A | 2097152 bit | PARALLEL | FLASH | 5 V | 75% | 100000 Write/Erase Cycles | -- | Yes | 8 | YES | YES | YES | 1,2,1,3 | 16K,8K,32K,64K | YES | BOTTOM | 1 | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No EPCQL512F24IN | ALTERA | Datasheet | 1888 |
| Min: 1 Mult: 1 | Surface Mount | 24-TBGA | YES | 24 | 24-FBGA (6x8) | 24 | 100 MHz | INTEL CORP | Intel Corporation | EPCQL512F24IN | 3 | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Obsolete | NOT SPECIFIED | 7.94 | Compliant | Yes | 1.8 V | -40°C ~ 85°C | Tray | EPCQ-L | e1 | Last Time Buy | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | CMOS | 1.7 V ~ 2 V | BOTTOM | BALL | NOT SPECIFIED | 1 | compliant | S-PBGA-B24 | 2 V | INDUSTRIAL | 1.7 V | In System Programmable | 2 V | 1.7 V | 512MB | SYNCHRONOUS | 0.02 mA | 64MX8 | 8 | 0.0001 A | 536870912 bit | SERIAL | CONFIGURATION MEMORY | 100000 Write/Erase Cycles | 8 ms | 20 | Lead Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No EPCQL256F24IN | ALTERA | Datasheet | 1600 |
| Min: 1 Mult: 1 | 24-TBGA | YES | 24 | 24-FBGA (6x8) | 24 | 100 MHz | INTEL CORP | Intel Corporation | EPCQL256F24IN | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA24,5X5,39 | BGA24,5X5,39 | RECTANGULAR | GRID ARRAY | Obsolete | 7.8 | Compliant | 1.8 V | -40°C ~ 85°C | Tray | EPCQ-L | Last Time Buy | NOR TYPE | 85 °C | -40 °C | CMOS | 1.7 V ~ 2 V | BOTTOM | BALL | 1 | 1 mm | compliant | S-PBGA-B24 | 2 V | INDUSTRIAL | 1.7 V | In System Programmable | 256 MB | SYNCHRONOUS | 0.02 mA | 32MX8 | 3-STATE | 1.2 mm | 8 | 0.00001 A | 268435456 bit | SERIAL | CONFIGURATION MEMORY | 1.8 V | SPI | 100000 Write/Erase Cycles | 20 | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W640GH70NB6E | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 56 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W640GH70NB6E | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP56,.8,20 | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 5.59 | Yes | 3 V | e3 | Yes | 3A991.B.1.A | NOR TYPE | Matte Tin (Sn) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 56 | R-PDSO-G56 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 4MX16 | 1.2 mm | 16 | 0.0001 A | 67108864 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 128 | 64K | 4/8 words | YES | BOTTOM | YES | 18.4 mm | 14 mm |
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Package:Memory
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Package:Memory
Price: please inquire