The category is 'Memory'
Memory (197)
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- Ihs Manufacturer
- JESD-30 Code
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- Number of Words Code
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- Supply Current-Max:
0.02 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Output Enable | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | I2C Control Byte | Length | Width |
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 | Mfr Part No M29W320EB70ZE6 | Micron Technology | Datasheet | 702 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W320EB70ZE6 | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | BGA | 30 | 5.47 | No | 3 V | e0 | No | 3A991.B.1.A | NOR TYPE | TIN LEAD SILVER | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 235 | 1 | 0.8 mm | not_compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.2 mm | 16 | 0.0001 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | BOTTOM | YES | 8 mm | 6 mm | |||||||||||||
| Mfr Part No M29F010B45N6E | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 45 ns | STMICROELECTRONICS | STMicroelectronics | M29F010B45N6E | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | 8 X 20 MM, LEAD FREE, PLASTIC, TSOP-32 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | NOT SPECIFIED | 5.54 | Yes | 5 V | e3/e6 | EAR99 | NOR TYPE | TIN/TIN BISMUTH | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.02 mA | 128KX8 | 1.2 mm | 8 | 0.0001 A | 1048576 bit | PARALLEL | FLASH | 5 V | 100000 Write/Erase Cycles | YES | YES | YES | 8 | 16K | 18.4 mm | 8 mm | ||||||||||||||||||
| Mfr Part No LP62S2048AX-70LLIF | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | AMIC TECHNOLOGY CORP | AMIC Technology | LP62S2048AX-70LLIF | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP32,.56,20 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | 5.55 | Yes | 3 V | SRAMs | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | R-PDSO-G32 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 256KX8 | 3-STATE | 1.25 mm | 8 | 0.000005 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 11.8 mm | 8 mm | ||||||||||||||||||||||||||||||
| Mfr Part No NAND256W3A0BZA6F | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 55 | 35 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | NAND256W3A0BZA6F | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | VFBGA-55 | BGA55,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | BGA | 30 | 5.18 | Yes | 3 V | e1 | Yes | 3A991.B.1.A | SLC NAND TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 55 | R-PBGA-B55 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 32MX8 | 1.05 mm | 8 | 0.00005 A | 268435456 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 2K | 16K | 512 words | YES | 10 mm | 8 mm | ||||||||||||||||
| Mfr Part No M29W640GL70NA6F | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W640GL70NA6F | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 5.6 | Yes | 3 V | e3 | Yes | 3A991.B.1.A | NOR TYPE | Matte Tin (Sn) | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 4MX16 | 1.2 mm | 16 | 0.0001 A | 67108864 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 128 | 64K | 4/8 words | YES | TOP | YES | 18.4 mm | 12 mm | ||||||||||||
| Mfr Part No 27C128-20/P | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 200 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | 27C128-20/P | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | DIP | 0.600 INCH, PLASTIC, DIP-28 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 5.64 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | OTP ROMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.02 mA | 16KX8 | 3-STATE | 4.83 mm | 8 | 0.0001 A | 131072 bit | PARALLEL | COMMON | OTP ROM | 13 V | 36.32 mm | 15.24 mm | ||||||||||||||||||||||||
| Mfr Part No M29W160ET90N6E | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 90 ns | NUMONYX | Numonyx Memory Solutions | M29W160ET90N6E | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | TSOP | NOT SPECIFIED | 5.39 | Yes | 3 V | EAR99 | NOR TYPE | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 1MX16 | 1.2 mm | 16 | 0.0001 A | 16777216 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | TOP | YES | 18.4 mm | 12 mm | ||||||||||||||||
| Mfr Part No RMLV0408EGSA-4S2 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 45 ns | RENESAS ELECTRONICS CORP | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | STSOP-32 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE | Active | 3 V | 3A991.B.2.A | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.5 mm | compliant | R-PDSO-G32 | Not Qualified | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 512KX8 | 3-STATE | 8 | 0.000002 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2.7 V | |||||||||||||||||||||||||||||||||||||||
| Mfr Part No RMLV0416EGBG-4S2 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 45 ns | RENESAS ELECTRONICS CORP | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, FINE PITCH | Active | Yes | 3 V | 3A991.B.2.A | 8542.32.00.41 | BOTTOM | BALL | 0.75 mm | compliant | R-PBGA-B48 | Not Qualified | INDUSTRIAL | ASYNCHRONOUS | 0.02 mA | 256KX16 | 3-STATE | 16 | 0.000002 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2.7 V | ||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No K6X1008T2D-TB55 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | SAMSUNG SEMICONDUCTOR INC | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP32,.8,20 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | GULL WING | 0.5 mm | compliant | R-PDSO-G32 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.02 mA | 128KX8 | 3-STATE | 8 | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | |||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No MX27L4000DC-20 | Macronix International Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 200 ns | MACRONIX INTERNATIONAL CO LTD | 524288 words | 512000 | 70 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP32,.6 | DIP32,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 3 V | e0 | EAR99 | TIN LEAD | 8542.32.00.61 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 32 | R-GDIP-T32 | Not Qualified | 3.6 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 512KX8 | 3-STATE | 5.7912 mm | 8 | 0.00005 A | 4194304 bit | PARALLEL | COMMON | UVPROM | 41.91 mm | 15.24 mm | |||||||||||||||||||||||||||||||||
| Mfr Part No SDA2586 | Infineon Technologies AG | Datasheet | - | - | Min: 1 Mult: 1 | NO | 8 | INFINEON TECHNOLOGIES AG | 1024 words | 1000 | 70 °C | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.51 | DUAL | THROUGH-HOLE | 2.54 mm | not_compliant | R-PDIP-T8 | Not Qualified | COMMERCIAL | 0.02 mA | 1KX8 | 8 | 0.02 A | 8192 bit | SERIAL | EEPROM | I2C | 10000 Write/Erase Cycles | 10 | 1010MMDR | ||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS62VV25616LL-85TI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 85 ns | INTEGRATED SILICON SOLUTION INC | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2-44 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 1.8 V | e0 | No | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 2.25 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 0.02 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.000005 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 1 V | 18.41 mm | 10.16 mm | ||||||||||||||||||||||||||||||
| Mfr Part No K6X1008T2D-BF85 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 85 ns | SAMSUNG SEMICONDUCTOR INC | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP32,.56 | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | Obsolete | Yes | EAR99 | 8542.32.00.41 | DUAL | GULL WING | 260 | 1.27 mm | unknown | R-PDSO-G32 | Not Qualified | INDUSTRIAL | ASYNCHRONOUS | 0.02 mA | 128KX8 | 3-STATE | 8 | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | |||||||||||||||||||||||||||||||||||||||||
| Mfr Part No LY62L2568RL-70LL | Lyontek Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | LYONTEK INC | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LSSOP | LSSOP, | RECTANGULAR | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | Contact Manufacturer | 3 V | e3 | 3A991.B.2.A | Tin (Sn) | 8542.32.00.41 | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 30 | R-PDSO-G32 | 3.6 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 256KX8 | 1.25 mm | 8 | 2097152 bit | PARALLEL | STANDARD SRAM | 11.8 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||
| Mfr Part No TC55VCM416BTGN55LB | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | TOSHIBA CORP | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | Yes | 3A991.B.2.A | 8542.32.00.41 | DUAL | GULL WING | 0.5 mm | unknown | R-PDSO-G48 | Not Qualified | INDUSTRIAL | ASYNCHRONOUS | 0.02 mA | 1MX16 | 3-STATE | 16 | 16777216 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | |||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT27C256R-70DC | Atmel Corporation | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 70 ns | ATMEL CORP | 32768 words | 32000 | 70 °C | CERAMIC, GLASS-SEALED | WDIP | 0.600 INCH, WINDOWED, CERDIP-28 | DIP28,.6 | RECTANGULAR | IN-LINE, WINDOW | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.61 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 28 | R-GDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.02 mA | 32KX8 | 3-STATE | 5.72 mm | 8 | 0.0001 A | 262144 bit | PARALLEL | COMMON | UVPROM | 13 V | 37.25 mm | 15.24 mm | |||||||||||||||||||||||||||||||
| Mfr Part No SDA3526-5 | Infineon Technologies AG | Datasheet | - | - | Min: 1 Mult: 1 | NO | 8 | INFINEON TECHNOLOGIES AG | 256 words | 256 | 70 °C | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.51 | DUAL | THROUGH-HOLE | 2.54 mm | not_compliant | R-PDIP-T8 | Not Qualified | COMMERCIAL | 0.02 mA | 256X8 | 8 | 0.02 A | 2048 bit | SERIAL | EEPROM | I2C | 100000 Write/Erase Cycles | 10 | HARDWARE | 1010DDDR | |||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS62LV256AL-20TL | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 20 ns | INTEGRATED SILICON SOLUTION INC | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP28,.53,22 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | TSOP | Yes | 3.3 V | e3 | Yes | EAR99 | MATTE TIN | 8542.32.00.41 | DUAL | GULL WING | 260 | 1 | 0.55 mm | compliant | 10 | 28 | R-PDSO-G28 | Not Qualified | 3.63 V | COMMERCIAL | 2.97 V | ASYNCHRONOUS | 0.02 mA | 32KX8 | 3-STATE | 1.2 mm | 8 | 0.000015 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 11.8 mm | 8 mm | |||||||||||||||||||||||||||||
| Mfr Part No MX23L6423XC-90 | Macronix International Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 150 ns | MACRONIX INTERNATIONAL CO LTD | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | LFBGA | LFBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | 5 V | EAR99 | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 48 | R-PBGA-B48 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.02 mA | 512KX8 | 1.3 mm | 8 | 0.000015 A | 4194304 bit | PARALLEL | MASK ROM | 8 | 8 mm | 6 mm |
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M29W320EB70ZE6
Micron Technology
Package:Memory
Price: please inquire
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M29F010B45N6E
Micron Technology
Package:Memory
Price: please inquire
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LP62S2048AX-70LLIF
AMIC Technology
Package:Memory
Price: please inquire
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NAND256W3A0BZA6F
Micron Technology
Package:Memory
Price: please inquire
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M29W640GL70NA6F
STMicroelectronics
Package:Memory
Price: please inquire
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27C128-20/P
Microchip
Package:Memory
Price: please inquire
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M29W160ET90N6E
Micron Technology
Package:Memory
Price: please inquire
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RMLV0408EGSA-4S2
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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RMLV0416EGBG-4S2
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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K6X1008T2D-TB55
Samsung Semiconductor
Package:Memory
Price: please inquire
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MX27L4000DC-20
Macronix International Co Ltd
Package:Memory
Price: please inquire
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SDA2586
Infineon Technologies AG
Package:Memory
Price: please inquire
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IS62VV25616LL-85TI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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K6X1008T2D-BF85
Samsung Semiconductor
Package:Memory
Price: please inquire
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LY62L2568RL-70LL
Lyontek Inc
Package:Memory
Price: please inquire
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TC55VCM416BTGN55LB
Toshiba America Electronic Components
Package:Memory
Price: please inquire
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AT27C256R-70DC
Atmel Corporation
Package:Memory
Price: please inquire
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SDA3526-5
Infineon Technologies AG
Package:Memory
Price: please inquire
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IS62LV256AL-20TL
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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MX23L6423XC-90
Macronix International Co Ltd
Package:Memory
Price: please inquire