The category is 'Memory'
Memory (197)
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- Supply Current-Max:
0.02 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Lifecycle Status | Contact plating | Mount | Surface Mount | Number of pins | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Connector | Connector pinout layout | Contacts pitch | Electrical mounting | Gross weight | Ihs Manufacturer | Kind of connector | Manufacturer | Manufacturer Part Number | Memory Types | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Samacsys Description | Spatial orientation | Supply Voltage-Nom (Vsup) | Type of connector | Operating temperature | Packaging | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Current rating | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Rated voltage | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Output Enable | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | I2C Control Byte | Profile | Length | Width | Plating thickness | Radiation Hardening | Flammability rating | Lead Free |
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![]() | Mfr Part No NAND02GW3B2CN6F | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 25000 ns | NUMONYX | Numonyx Memory Solutions | NAND02GW3B2CN6F | 268435456 words | 256000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | TSOP | NOT SPECIFIED | 5.62 | Yes | 3 V | Yes | 3A991.B.1.A | SLC NAND TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 256MX8 | 1.2 mm | 8 | 0.00005 A | 2147483648 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 2K | 128K | 2K words | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No TC55VCM316BTGN55 | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | TOSHIBA CORP | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | Yes | 3 V | 3A991.B.2.A | 8542.32.00.41 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | NOT SPECIFIED | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | INDUSTRIAL | 2.3 V | ASYNCHRONOUS | 0.02 mA | 512KX16 | 3-STATE | 1.2 mm | 16 | 8388608 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No SDA2526-2 | Infineon Technologies AG | Datasheet | - | - | Min: 1 Mult: 1 | NO | 8 | INFINEON TECHNOLOGIES AG | 256 words | 256 | 70 °C | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.51 | DUAL | THROUGH-HOLE | 2.54 mm | not_compliant | R-PDIP-T8 | Not Qualified | COMMERCIAL | 0.02 mA | 256X8 | 8 | 0.02 A | 2048 bit | SERIAL | EEPROM | I2C | 10000 Write/Erase Cycles | 10 | 1010DDDR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AS6C1616B-45BIN | Alliance Memory Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 45 ns | ALLIANCE MEMORY INC | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | FBGA-48 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Active | Yes | 3 V | BOTTOM | BALL | 1 | 0.75 mm | unknown | R-PBGA-B48 | 3.6 V | 2.7 V | ASYNCHRONOUS | 0.02 mA | 1MX16 | 3-STATE | 1.4 mm | 16 | 0.00004 A | 16777216 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | YES | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No K6X1008T2D-GQ85 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 85 ns | SAMSUNG SEMICONDUCTOR INC | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP32,.56 | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 3 V | e0 | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | AUTOMOTIVE | 2.7 V | ASYNCHRONOUS | 0.02 mA | 128KX8 | 3-STATE | 3 mm | 8 | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 20.47 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No RMLV0416EGSB-4S2 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 45 ns | RENESAS ELECTRONICS CORP | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | Yes | 3 V | 3A991.B.2.A | 8542.32.00.41 | DUAL | GULL WING | 0.8 mm | compliant | R-PDSO-G44 | Not Qualified | INDUSTRIAL | ASYNCHRONOUS | 0.02 mA | 256KX16 | 3-STATE | 16 | 0.000002 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2.7 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No RMLV0416EGSB-4S2 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | gold-plated | YES | 3 | 44 | 45 ns | socket | 1x3 | 2.54mm | THT | 0.26 g | RENESAS ELECTRONICS CORP | female | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | Yes | straight | 3 V | pin strips | -40...163°C | 3A991.B.2.A | 8542.32.00.41 | DUAL | GULL WING | 0.8 mm | compliant | 1.5A | R-PDSO-G44 | Not Qualified | INDUSTRIAL | ASYNCHRONOUS | 0.02 mA | 256KX16 | 3-STATE | 16 | 0.000002 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2.7 V | 60V | beryllium copper | 0.75µm | UL94V-0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MX23L4000TI-20 | Macronix International Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 200 ns | MACRONIX INTERNATIONAL CO LTD | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP32,.8,20 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | No | 3 V | e0 | EAR99 | TIN LEAD | 8542.32.00.71 | DUAL | GULL WING | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 512KX8 | 3-STATE | 1.2 mm | 8 | 0.000005 A | 4194304 bit | PARALLEL | MASK ROM | 18.4 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MX23L2000TI-50 | Macronix International Co Ltd | Datasheet | 16000 | - | Min: 1 Mult: 1 | YES | 32 | 500 ns | MACRONIX INTERNATIONAL CO LTD | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP32,.8,20 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | No | 3 V | e0 | EAR99 | TIN LEAD | 8542.32.00.71 | DUAL | GULL WING | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 256KX8 | 1.2 mm | 8 | 0.00002 A | 2097152 bit | PARALLEL | MASK ROM | 18.4 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M28W320FCB70ZB6F | Micron | Datasheet | 1735 | - | Min: 1 Mult: 1 | YES | 47 | 70 ns | NUMONYX | Numonyx Memory Solutions | M28W320FCB70ZB6F | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA47,6X8,30 | BGA47,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Transferred | BGA | NOT SPECIFIED | 5.13 | Yes | 3 V | e1 | 3A991.B.1.A | NOR TYPE | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.75 mm | unknown | 47 | R-PBGA-B47 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.2 mm | 16 | 0.000005 A | 33554432 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 8,63 | 4K,32K | BOTTOM | YES | 6.39 mm | 6.37 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No N25Q128A13BSF40F | Micron | Datasheet | 1688 | - | Min: 1 Mult: 1 | YES | 16 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A13BSF40F | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP16,.4 | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 30 | 7.94 | Yes | NOR Flash SERIAL NOR SLC 32MX4 SOIC | 3 V | Yes | 3A991.B.1.A | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 16 | R-PDSO-G16 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 16MX8 | 2.65 mm | 8 | 0.0001 A | 134217728 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | BOTTOM | 10.3 mm | 7.5 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No N25Q256A11EF840F | Micron | Datasheet | 1429 | - | Min: 1 Mult: 1 | Obsolete (Last Updated: 2 years ago) | Surface Mount | YES | 8 | 8 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q256A11EF840F | NOR | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | HVSON, SOLCC8,.3 | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Obsolete | DFN | 30 | 5.67 | Compliant | Yes | 1.8 V | Tape & Reel | Yes | 3A991.B.1.A | NOR TYPE | 85 °C | -40 °C | SPI-COMPATIBLE SERIAL BUS INTERFACE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | NO LEAD | 260 | 1 | 1.27 mm | compliant | 108 MHz | 8 | R-PDSO-N8 | Not Qualified | 1.8 V | 2 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.7 V | SPI, Serial | 2 V | 1.7 V | SYNCHRONOUS | 0.02 mA | 8 ns | 32MX8 | 1 mm | 8 | 1 b | 256 Mb | 0.00002 A | 268435456 bit | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256 B | 8 mm | 6 mm | No | ||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M29DW323DT70N6F | Micron | Datasheet | 252 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M29DW323DT70N6F | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP | 30 | 5.14 | Yes | 3 V | e3/e6 | 3A991.B.1.A | NOR TYPE | TIN/TIN BISMUTH | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.2 mm | 16 | 0.0001 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | TOP | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M29W160EB90N6 | STMicroelectronics | Datasheet | 457 | - | Min: 1 Mult: 1 | YES | 48 | 90 ns | STMICROELECTRONICS | STMicroelectronics | M29W160EB90N6 | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | 12 X 20 MM, PLASTIC, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP | 4.02 | Yes | 3 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 1MX16 | 1.2 mm | 16 | 0.0001 A | 16777216 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M28W160CB70N6F | Micron | Datasheet | 1177 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M28W160CB70N6F | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | TSOP | 40 | 5.08 | Yes | 3 V | e3/e6 | EAR99 | NOR TYPE | TIN/TIN BISMUTH | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 1MX16 | 1.2 mm | 16 | 0.000005 A | 16777216 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 8,31 | 4K,32K | BOTTOM | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No N25Q128A13ESE40F | Micron | Datasheet | 440 | - | Min: 1 Mult: 1 | YES | 8 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A13ESE40F | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | SQUARE | SMALL OUTLINE | Obsolete | SOIC | 30 | 7.94 | Yes | Serial Flash 128 Mbit SPI 3V SO8W N25Q128A13ESE40F, Serial-SPI NOR Flash Memory, 16M x 8 bit 128Mbit, 7ns, 2.7 u2192 3.6 V, 8-Pin, SOIC W | 3 V | Yes | 3A991.B.1.A | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 8 | S-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 16MX8 | 2.16 mm | 8 | 0.0001 A | 134217728 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 5.285 mm | 5.285 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No HY27US08561A-FPCB | Hynix | Datasheet | 3520 | - | Min: 1 Mult: 1 | YES | 63 | 30 ns | SK HYNIX INC | SK Hynix Inc | HY27US08561A-FPCB | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA63,10X12,32 | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 20 | 5.8 | Yes | 3.3 V | e1 | Yes | 3A991.B.1.A | SLC NAND TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 63 | R-PBGA-B63 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 32MX8 | 1 mm | 8 | 0.00005 A | 268435456 bit | PARALLEL | FLASH | 3.3 V | NO | NO | YES | 2K | 16K | 512 words | YES | 11 mm | 9 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25P128-VMF6TP | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 16 | 16 | 54 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M25P128-VMF6TP | FLASH, NOR | 1.6777216e+07 | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOP-16 | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.6 | Compliant | Yes | 3 V | Tape & Reel (TR) | Yes | 3A991.B.1.A | NOR TYPE | 85 °C | -40 °C | MORE THAN 10000 ERASE/PROGRAM CYCLES MORE THAN 20-YEAR DATA RETENTION | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 50 MHz | 16 | R-PDSO-G16 | Not Qualified | 3.3 V | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | SPI, Serial | 3.6 V | 2.7 V | 15.3 MB | 8 mA | SYNCHRONOUS | 0.02 mA | 8 ns | 16MX8 | 2.65 mm | 8 | 1 b | 128 Mb | 0.0001 A | 134217728 bit | SERIAL | Synchronous | 8 b | FLASH | 2.7 V | SPI | 10000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 10.3 mm | 7.5 mm | No | Lead Free | ||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M29W128FH70N6E | STMicroelectronics | Datasheet | 560 | - | Min: 1 Mult: 1 | YES | 56 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W128FH70N6E | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP56,.8,20 | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Active | 5.76 | Yes | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 0.5 mm | compliant | R-PDSO-G56 | Not Qualified | 3/3.3 V | INDUSTRIAL | 0.02 mA | 8MX16 | 16 | 0.0001 A | 134217728 bit | PARALLEL | FLASH | 8 | YES | YES | YES | 256 | 64K | 8/16 words | YES | YES | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M29W800DT70N6F | STMicroelectronics | Datasheet | 8 | - | Min: 1 Mult: 1 | Surface Mount | YES | 48 | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W800DT70N6F | NOR | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | NOT SPECIFIED | 5.49 | Compliant | Yes | 3 V | Bulk | e3 | Yes | EAR99 | NOR TYPE | Matte Tin (Sn) | 85 °C | -40 °C | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | Parallel | 3.6 V | 2.7 V | 1 MB | ASYNCHRONOUS | 0.02 mA | 70 ns | 16 b | 512KX16 | 1.2 mm | 16 | 0.0001 A | 8388608 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | TOP | YES | 18.4 mm | 12 mm |
NAND02GW3B2CN6F
Micron Technology
Package:Memory
Price: please inquire
TC55VCM316BTGN55
Toshiba America Electronic Components
Package:Memory
Price: please inquire
SDA2526-2
Infineon Technologies AG
Package:Memory
Price: please inquire
AS6C1616B-45BIN
Alliance Memory Inc
Package:Memory
Price: please inquire
K6X1008T2D-GQ85
Samsung Semiconductor
Package:Memory
Price: please inquire
RMLV0416EGSB-4S2
Renesas Electronics Corporation
Package:Memory
Price: please inquire
RMLV0416EGSB-4S2
Renesas Electronics Corporation
Package:Memory
Price: please inquire
MX23L4000TI-20
Macronix International Co Ltd
Package:Memory
Price: please inquire
MX23L2000TI-50
Macronix International Co Ltd
Package:Memory
Price: please inquire
M28W320FCB70ZB6F
Micron
Package:Memory
Price: please inquire
N25Q128A13BSF40F
Micron
Package:Memory
Price: please inquire
N25Q256A11EF840F
Micron
Package:Memory
Price: please inquire
M29DW323DT70N6F
Micron
Package:Memory
Price: please inquire
M29W160EB90N6
STMicroelectronics
Package:Memory
Price: please inquire
M28W160CB70N6F
Micron
Package:Memory
Price: please inquire
N25Q128A13ESE40F
Micron
Package:Memory
Price: please inquire
HY27US08561A-FPCB
Hynix
Package:Memory
Price: please inquire
M25P128-VMF6TP
Micron
Package:Memory
Price: please inquire
M29W128FH70N6E
STMicroelectronics
Package:Memory
Price: please inquire
M29W800DT70N6F
STMicroelectronics
Package:Memory
Price: please inquire
