The category is 'Memory'
Memory (197)
- All Manufacturers
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Temperature-Max
- Organization
- Package Code
- Supply Current-Max
- Supply Current-Max:
0.02 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Lifecycle Status | Contact Plating | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Usage Level | Packaging | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Interface | Max Supply Voltage | Min Supply Voltage | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Length | Width | Radiation Hardening |
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 | Mfr Part No M29F016D70N6 | STMicroelectronics | Datasheet | 204 | - | Min: 1 Mult: 1 | YES | 40 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M29F016D70N6 | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | 10 X 20 MM, PLASTIC, TSOP-40 | TSSOP40,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | NOT SPECIFIED | 5.71 | Yes | 5 V | e0 | EAR99 | NOR TYPE | TIN LEAD | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 40 | R-PDSO-G40 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.02 mA | 2MX8 | 1.2 mm | 8 | 0.00015 A | 16777216 bit | PARALLEL | FLASH | 5 V | YES | YES | YES | 32 | 64K | YES | YES | 18.4 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q128A13ESF40F | Micron | Datasheet | 377 | - | Min: 1 Mult: 1 | YES | 16 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A13ESF40F | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP16,.4 | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 30 | 5.72 | Yes | 3 V | Yes | 3A991.B.1.A | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 16 | R-PDSO-G16 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 16MX8 | 2.65 mm | 8 | 0.0001 A | 134217728 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 10.3 mm | 7.5 mm | |||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q064A13ESED0F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q064A13ESED0F | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | SQUARE | SMALL OUTLINE | Obsolete | NOT SPECIFIED | 5.8 | Yes | 3 V | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | S-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 64MX1 | 2.16 mm | 1 | 0.0001 A | 67108864 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 5.285 mm | 5.285 mm | ||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT45W2MW16PGA-70WT | Micron | Datasheet | 780 | - | Min: 1 Mult: 1 | Surface Mount | YES | 48 | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT45W2MW16PGA-70WT | 2097152 words | 2000000 | 85 °C | -30 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.8 | Compliant | Yes | e1 | Yes | 3A991.B.2.A | TIN SILVER COPPER | 85 °C | -30 °C | 8542.32.00.41 | Other Memory ICs | CMOS | BOTTOM | BALL | 260 | 1 | 0.75 mm | unknown | 48 | R-PBGA-B48 | Not Qualified | 1.8 V | 1.95 V | 1.8,1.8/3 V | COMMERCIAL EXTENDED | 1.7 V | 1 | ASYNCHRONOUS | 0.02 mA | 2MX16 | 3-STATE | 1 mm | 16 | 21 b | 32 Mb | 0.00011 A | 33554432 bit | PARALLEL | COMMON | PSEUDO STATIC RAM | 8 mm | 6 mm | No | ||||||||||||||||||||||||||||||||||||
| Mfr Part No MT29F1G08ABBHC-ET:B | Micron | Datasheet | 3200 | - | Min: 1 Mult: 1 | YES | 63 | 30 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT29F1G08ABBHC-ET:B | 1 | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA63,10X12,32 | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | NOT SPECIFIED | 8.53 | Yes | 1.8 V | e3 | Yes | SLC NAND TYPE | Matte Tin (Sn) | Flash Memories | CMOS | BOTTOM | BALL | 225 | 0.8 mm | compliant | R-PBGA-B63 | Not Qualified | 1.8 V | INDUSTRIAL | Parallel | 0.02 mA | 30 | 128MX8 | 8 | 0.00005 A | 1 | PARALLEL | FLASH | NO | NO | YES | 1K | 128K | 2K words | YES | |||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q128A13B1240F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 24 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A13B1240F | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA24,5X5,40 | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | 30 | 5.76 | Yes | 3 V | e1 | Yes | 3A991.B.1.A | NOR TYPE | TIN SILVER COPPER | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 24 | R-PBGA-B24 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 16MX8 | 1.2 mm | 8 | 0.0001 A | 134217728 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q032A13E1240F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 24 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q032A13E1240F | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA24,5X5,40 | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | 30 | 5.8 | Yes | 3 V | e1 | Yes | NOR TYPE | TIN SILVER COPPER | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | R-PBGA-B24 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 4MX8 | 1.2 mm | 8 | 0.0001 A | 33554432 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q128A13EF840F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A13EF840F | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | HVSON, SOLCC8,.3 | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Obsolete | 30 | 8.49 | Yes | 3 V | Yes | 3A991.B.1.A | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | NO LEAD | 260 | 1 | 1.27 mm | compliant | R-PDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 128MX1 | 1 mm | 1 | 0.0001 A | 134217728 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W128GL7AN6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 56 | 70 ns | NUMONYX | Numonyx Memory Solutions | M29W128GL7AN6F | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP56,.8,20 | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE | Transferred | TSOP | NOT SPECIFIED | 5.34 | Yes | 3 V | 3A991.B.1.A | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 56 | R-PDSO-G56 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 8MX16 | 1.2 mm | 16 | 0.0001 A | 134217728 bit | PARALLEL | FLASH | 3 V | 0.00007 ms | 8 | YES | YES | YES | 128 | 128K | 8/16 words | YES | YES | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W160EB70ZA6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W160EB70ZA6F | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.46 | Yes | 3 V | e1 | Yes | EAR99 | NOR TYPE | Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 1MX16 | 1.2 mm | 16 | 0.0001 A | 16777216 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | BOTTOM | YES | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||
| Mfr Part No M28W640HCB70N6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M28W640HCB70N6F | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | TSOP | 40 | 5.53 | Yes | 3 V | e3/e6 | Yes | 3A991.B.1.A | NOR TYPE | MATTE TIN/TIN BISMUTH | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 4MX16 | 1.2 mm | 16 | 0.000005 A | 67108864 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 8,127 | 4K,32K | 4 words | BOTTOM | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W640FT70N6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Obsolete (Last Updated: 2 years ago) | YES | 48 | 48 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M29W640FT70N6F | NOR | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP | 40 | 5.38 | Compliant | Yes | 3 V | Tape & Reel | e3/e6 | 3A991.B.1.A | NOR TYPE | TIN/TIN BISMUTH | 85 °C | -40 °C | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | Parallel | 3.6 V | 2.7 V | 10 mA | ASYNCHRONOUS | 0.02 mA | 70 ns | 4MX16 | 1.2 mm | 16 | 64 Mb | 0.0001 A | 67108864 bit | PARALLEL | Asynchronous | FLASH | 3 V | 8 | YES | YES | YES | 8,127 | 8K,64K | 4/8 words | YES | TOP | YES | 18.4 mm | 12 mm | No | ||||||||||||||||||||
| Mfr Part No N25Q128A13ESFH0F | Micron | Datasheet | 307 | - | Min: 1 Mult: 1 | Obsolete (Last Updated: 2 years ago) | YES | 16 | 16 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A13ESFH0F | NOR | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP16,.4 | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | 30 | 5.76 | Compliant | Yes | 3 V | Tape & Reel | Yes | NOR TYPE | 85 °C | -40 °C | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 108 MHz | R-PDSO-G16 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | SPI, Serial | 3.6 V | 2.7 V | SYNCHRONOUS | 0.02 mA | 128MX1 | 2.65 mm | 1 | 24 b | 128 Mb | 0.0001 A | 134217728 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256 B | 10.3 mm | 7.5 mm | No | |||||||||||||||||||||||||||||||
| Mfr Part No N25Q128A11E1240F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 24 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A11E1240F | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA24,5X5,40 | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | NOT SPECIFIED | 5.76 | Yes | 1.8 V | e1 | Yes | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | R-PBGA-B24 | Not Qualified | 2 V | 1.8 V | INDUSTRIAL | 1.7 V | SYNCHRONOUS | 0.02 mA | 128MX1 | 1.2 mm | 1 | 0.00001 A | 134217728 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q128A11EF840F | Micron | Datasheet | 80000 | - | Min: 1 Mult: 1 | YES | 8 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A11EF840F | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | HVSON, SOLCC8,.3 | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Obsolete | 30 | 5.73 | Yes | 1.8 V | Yes | NOR TYPE | Flash Memories | CMOS | DUAL | NO LEAD | 260 | 1 | 1.27 mm | compliant | R-PDSO-N8 | Not Qualified | 2 V | 1.8 V | INDUSTRIAL | 1.7 V | SYNCHRONOUS | 0.02 mA | 128MX1 | 1 mm | 1 | 0.00001 A | 134217728 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W800DB70ZE6 | STMicroelectronics | Datasheet | 2688 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M29W800DB70ZE6 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 5.31 | Yes | 3 V | e0 | EAR99 | NOR TYPE | TIN LEAD | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 512KX16 | 1.2 mm | 16 | 0.0001 A | 8388608 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | YES | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q064A13ESEH0F | Micron | Datasheet | 85 | - | Min: 1 Mult: 1 | EOL (Last Updated: 2 years ago) | YES | 8 | 8 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q064A13ESEH0F | NOR | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | SQUARE | SMALL OUTLINE | Obsolete | NOT SPECIFIED | 5.74 | Compliant | Yes | 3 V | Tape & Reel | Yes | NOR TYPE | 85 °C | -40 °C | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 108 MHz | S-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | SPI, Serial | 3.6 V | 2.7 V | SYNCHRONOUS | 0.02 mA | 64MX1 | 2.16 mm | 1 | 1 b | 64 Mb | 0.0001 A | 67108864 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256 B | 5.285 mm | 5.285 mm | ||||||||||||||||||||||||||||||||
| Mfr Part No M29W128GL7AZS6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W128GL7AZS6F | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA64,8X8,40 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | NOT SPECIFIED | 5.37 | Yes | 3 V | Automotive grade | e1 | Yes | 3A991.B.1.A | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 64 | R-PBGA-B64 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 8KX16 | 1.4 mm | 16 | 0.0001 A | 131072 bit | AEC-Q100 | PARALLEL | FLASH | 3 V | 0.00007 ms | 8 | YES | YES | YES | 128 | 128K | 8/16 words | YES | YES | 13 mm | 11 mm | |||||||||||||||||||||||||||||||||
| Mfr Part No M29W640GT70ZA6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | EOL (Last Updated: 2 years ago) | Copper, Silver, Tin | YES | 48 | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W640GT70ZA6F | NOR | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 5.54 | Compliant | Yes | 3 V | Tape & Reel | e1 | Yes | 3A991.B.1.A | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | Parallel | 3.6 V | 2.7 V | 10 mA | ASYNCHRONOUS | 0.02 mA | 70 ns | 4MX16 | 1.2 mm | 16 | 64 Mb | 0.0001 A | 67108864 bit | PARALLEL | Asynchronous | FLASH | 3 V | 8 | YES | YES | YES | 8,127 | 8K,64K | 4/8 words | YES | TOP | YES | 8 mm | 6 mm | No | |||||||||||||||||
| Mfr Part No MT29F2G16ABDHC-ET:D | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 63 | 25 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT29F2G16ABDHC-ET:D | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA63,10X12,32 | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 8.51 | Yes | 1.8 V | e1 | SLC NAND TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 63 | R-PBGA-B63 | Not Qualified | 1.95 V | 1.8 V | INDUSTRIAL | 1.65 V | ASYNCHRONOUS | 0.02 mA | 128MX16 | 1 mm | 16 | 0.00005 A | 2147483648 bit | PARALLEL | FLASH | 1.8 V | NO | NO | YES | 2K | 64K | 1K words | YES | 13 mm | 10.5 mm |
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M29F016D70N6
STMicroelectronics
Package:Memory
Price: please inquire
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N25Q128A13ESF40F
Micron
Package:Memory
Price: please inquire
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N25Q064A13ESED0F
Micron
Package:Memory
Price: please inquire
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MT45W2MW16PGA-70WT
Micron
Package:Memory
Price: please inquire
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MT29F1G08ABBHC-ET:B
Micron
Package:Memory
Price: please inquire
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N25Q128A13B1240F
Micron
Package:Memory
Price: please inquire
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N25Q032A13E1240F
Micron
Package:Memory
Price: please inquire
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N25Q128A13EF840F
Micron
Package:Memory
Price: please inquire
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M29W128GL7AN6F
Micron
Package:Memory
Price: please inquire
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M29W160EB70ZA6F
Micron
Package:Memory
Price: please inquire
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M28W640HCB70N6F
Micron
Package:Memory
Price: please inquire
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M29W640FT70N6F
Micron
Package:Memory
Price: please inquire
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N25Q128A13ESFH0F
Micron
Package:Memory
Price: please inquire
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N25Q128A11E1240F
Micron
Package:Memory
Price: please inquire
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N25Q128A11EF840F
Micron
Package:Memory
Price: please inquire
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M29W800DB70ZE6
STMicroelectronics
Package:Memory
Price: please inquire
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N25Q064A13ESEH0F
Micron
Package:Memory
Price: please inquire
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M29W128GL7AZS6F
Micron
Package:Memory
Price: please inquire
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M29W640GT70ZA6F
Micron
Package:Memory
Price: please inquire
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MT29F2G16ABDHC-ET:D
Micron
Package:Memory
Price: please inquire