The category is 'Memory'
Memory (197)
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- Ihs Manufacturer
- JESD-30 Code
- Memory Density
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- Memory Width
- Number of Terminals
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- Number of Words Code
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- Supply Current-Max:
0.02 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Lifecycle Status | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Address Bus | Cell Type | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Memory Types | Moisture Sensitivity Levels | Mounting | Number of Words | Number of Words Code | Operating Supply Voltage (Max) | Operating Supply Voltage (Min) | Operating Supply Voltage (Typ) | Operating Temp Range | Operating Temperature (Max.) | Operating Temperature (Min.) | Operating Temperature Classification | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Package Type | Part Life Cycle Code | Part Package Code | Programmable | Rad Hardened | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Packaging | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Interface | Max Supply Voltage | Min Supply Voltage | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Data Retention Time-Min | Write Protection | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Supply Current | Length | Width | Radiation Hardening |
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 | Mfr Part No N25Q128A13EF740F | Micron | Datasheet | 812 | - | Min: 1 Mult: 1 | YES | 8 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A13EF740F | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | HVSON, SOLCC8,.25 | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Obsolete | DFP | 30 | 5.73 | Yes | 3 V | Yes | 3A991.B.1.A | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | NO LEAD | 260 | 1 | 1.27 mm | compliant | 8 | R-PDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 16MX8 | 1 mm | 8 | 0.0001 A | 134217728 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 6 mm | 5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q00AA13GSF40F | Micron | Datasheet | 2 | - | Min: 1 Mult: 1 | EOL (Last Updated: 2 years ago) | Surface Mount | YES | 16 | 16 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q00AA13GSF40F | NOR | 1073741824 words | 1000000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP16,.4 | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | NOT SPECIFIED | 5.8 | Compliant | Yes | 3 V | Tape & Reel | Yes | NOR TYPE | 85 °C | -40 °C | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 108 MHz | R-PDSO-G16 | Not Qualified | 3 V | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | SPI, Serial | 3.6 V | 2.7 V | 20 mA | SYNCHRONOUS | 0.02 mA | 9 ns | 1GX1 | 2.65 mm | 1 | 1 b | 1 Gb | 0.0002 A | 1073741824 bit | SERIAL | Synchronous | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256 B | 10.3 mm | 7.5 mm | |||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W320ET70ZE6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | NUMONYX | Numonyx Memory Solutions | M29W320ET70ZE6F | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Transferred | BGA | NOT SPECIFIED | 5.13 | Yes | 3 V | 3A991.B.1.A | NOR TYPE | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.2 mm | 16 | 0.0001 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | TOP | YES | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W128GH70ZA6E | Micron | Datasheet | 57600 |
| Min: 1 Mult: 1 | YES | 64 | 70 ns | 24/23(b) | NOR | NUMONYX | Parallel | Numonyx Memory Solutions | M29W128GH70ZA6E | Surface Mount | 16M/8M | 8000000 | 3.6(V) | 2.7(V) | 3/3.3(V) | -40C to 85C | 85C | -40C | Industrial | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA64,8X8,40 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | TBGA | Transferred | BGA | Yes | No | NOT SPECIFIED | 5.28 | Yes | 3 V | Tray | 3A991.B.1.A | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | unknown | 64 | R-PBGA-B64 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 8MX16 | 1.2 mm | 16 | 134217728(Bit) | 0.0001 A | 134217728 bit | 70(ns) | PARALLEL | Asynchronous | 8/16(b) | FLASH | 3 V | 8 | YES | YES | YES | 128 | 128K | 8/16 words | YES | YES | 10(mA) | 13 mm | 10 mm | |||||||||||||||||||||||||||||||
| Mfr Part No M29F032D70N6T | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M29F032D70N6T | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | 10 X 20 MM, PLASTIC, TSOP-40 | TSSOP40,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | NOT SPECIFIED | 5.41 | Yes | 5 V | e0 | 3A991.B.1.A | NOR TYPE | TIN LEAD | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 40 | R-PDSO-G40 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.02 mA | 4MX8 | 1.2 mm | 8 | 0.00015 A | 33554432 bit | PARALLEL | FLASH | 5 V | YES | YES | YES | 64 | 64K | YES | YES | 18.4 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q128A13E1241F | Micron | Datasheet | 40 | - | Min: 1 Mult: 1 | YES | 24 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A13E1241F | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA24,5X5,40 | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | NOT SPECIFIED | 5.74 | Yes | 3 V | e1 | Yes | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | R-PBGA-B24 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 128MX1 | 1.2 mm | 1 | 0.0001 A | 134217728 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 27C64-25/SO | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 250 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | 27C64-25/SO | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | SOP | 0.300 INCH, PLASTIC, SOIC-28 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 8.04 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | OTP ROMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.02 mA | 8KX8 | 3-STATE | 2.64 mm | 8 | 0.0001 A | 65536 bit | PARALLEL | COMMON | OTP ROM | 13 V | 17.87 mm | 7.49 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 27LV256-25/L | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 250 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | 27LV256-25/L | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | NOT SPECIFIED | 8.81 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | DATA RETENTION >200 YEARS | 8542.32.00.71 | OTP ROMs | CMOS | QUAD | J BEND | NOT SPECIFIED | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 3.3/5 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.02 mA | 32KX8 | 3-STATE | 3.56 mm | 8 | 0.0001 A | 262144 bit | PARALLEL | COMMON | OTP ROM | 13 V | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 27C64-25/P | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 250 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | 27C64-25/P | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | DIP | 0.600 INCH, PLASTIC, DIP-28 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 5.64 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | OTP ROMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.02 mA | 8KX8 | 3-STATE | 4.83 mm | 8 | 0.0001 A | 65536 bit | PARALLEL | COMMON | OTP ROM | 13 V | 36.32 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q128A11BSF40F | Micron | Datasheet | 7 | - | Min: 1 Mult: 1 | YES | 16 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A11BSF40F | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOP-16 | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | Active | SOIC | 30 | 5.62 | Yes | 1.8 V | Yes | 3A991.B.1.A | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 16 | R-PDSO-G16 | Not Qualified | 2 V | 1.8 V | INDUSTRIAL | 1.7 V | Serial (SPI) | SYNCHRONOUS | 0.02 mA | 7 | 16MX8 | 2.65 mm | 8 | 0.00001 A | 128 | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 10.3 mm | 7.5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29F040B70K6E | STMicroelectronics | Datasheet | 17 | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M29F040B70K6E | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | LEAD FREE, PLASTIC, LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 40 | 5.26 | Yes | 5 V | e3 | EAR99 | NOR TYPE | Matte Tin (Sn) | 8542.32.00.51 | Flash Memories | CMOS | QUAD | J BEND | 250 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.02 mA | 512KX8 | 3.56 mm | 8 | 0.0001 A | 4194304 bit | PARALLEL | FLASH | 5 V | 100000 Write/Erase Cycles | YES | YES | YES | 8 | 64K | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W640GB70NA6F | Micron | Datasheet | 7200 | - | Min: 1 Mult: 1 | Obsolete (Last Updated: 2 years ago) | YES | 48 | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W640GB70NA6F | NOR | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 5.55 | Compliant | Yes | 3 V | Tape & Reel | e3 | Yes | 3A991.B.1.A | NOR TYPE | MATTE TIN | 85 °C | -40 °C | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | Parallel | 3.6 V | 2.7 V | 10 mA | ASYNCHRONOUS | 0.02 mA | 70 ns | 4MX16 | 1.2 mm | 16 | 64 Mb | 0.0001 A | 67108864 bit | PARALLEL | Asynchronous | FLASH | 3 V | 8 | YES | YES | YES | 8,127 | 8K,64K | 4/8 words | YES | BOTTOM | YES | 18.4 mm | 12 mm | No | ||||||||||||||||||||||||||||||
| Mfr Part No M28W640HCT70N6F | Micron | Datasheet | 30 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M28W640HCT70N6F | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | TSOP | 40 | 5.51 | Yes | 3 V | e3/e6 | Yes | 3A991.B.1.A | NOR TYPE | MATTE TIN/TIN BISMUTH | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 4MX16 | 1.2 mm | 16 | 0.000005 A | 67108864 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 8,127 | 4K,32K | 4 words | TOP | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W320EB70ZS6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W320EB70ZS6F | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA64,8X8,40 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | NOT SPECIFIED | 5.79 | Yes | 3 V | NOR TYPE | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | unknown | R-PBGA-B64 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.4 mm | 16 | 0.0001 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | BOTTOM | YES | 13 mm | 11 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W800FB7AN6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Obsolete (Last Updated: 2 years ago) | YES | 48 | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W800FB7AN6F | NOR | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 5.24 | Compliant | Yes | 3.3 V | Tape & Reel | e3 | Yes | EAR99 | NOR TYPE | MATTE TIN | 85 °C | -40 °C | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | Parallel | 3.6 V | 2.7 V | ASYNCHRONOUS | 0.02 mA | 512KX16 | 1.2 mm | 16 | 8 Mb | 0.0001 A | 8388608 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | No | ||||||||||||||||||||||||||||||||||
| Mfr Part No M28W640HCB70ZB6F | Micron | Datasheet | 59 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M28W640HCB70ZB6F | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.81 | Yes | 3 V | e1 | Yes | 3A991.B.1.A | NOR TYPE | TIN SILVER COPPER | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.75 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 4MX16 | 1.2 mm | 16 | 0.000005 A | 67108864 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 8,127 | 4K,32K | 4 words | BOTTOM | YES | 10.5 mm | 6.39 mm | ||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No K9F5608R0D-JIB0000 | Samsung | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 63 | 63 | 35 ns | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K9F5608R0D-JIB0000 | NAND, SLC NAND | 1 | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA63,10X12,32 | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | NOT SPECIFIED | 5.84 | Compliant | Yes | 1.8 V | e3 | Yes | Matte Tin (Sn) | 85 °C | -40 °C | Flash Memories | CMOS | BOTTOM | BALL | 225 | 0.8 mm | unknown | R-PBGA-B63 | Not Qualified | 1.8 V | 1.8 V | INDUSTRIAL | Parallel | 1.95 V | 1.65 V | 20 mA | 0.02 mA | 15 µs | 32MX8 | 8 | 8 b | 256 Mb | 0.00005 A | 268435456 bit | PARALLEL | Asynchronous | 8 b | FLASH | NO | NO | YES | 2K | 16K | 512 B | YES | No | |||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W320DB70ZE6F | Micron | Datasheet | 44 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W320DB70ZE6F | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.7 | Yes | 3.3 V | e1 | Yes | 3A991.B.1.A | NOR TYPE | Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.2 mm | 16 | 0.0001 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,63 | 16K,8K,32K,64K | YES | BOTTOM | YES | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W320ET70ZS6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W320ET70ZS6F | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA64,8X8,32 | BGA64,8X8,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | NOT SPECIFIED | 5.82 | Yes | 3 V | NOR TYPE | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | unknown | R-PBGA-B64 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.4 mm | 16 | 0.0001 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | TOP | YES | 13 mm | 11 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M28W320FCB70N6F | Micron | Datasheet | 6816 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M28W320FCB70N6F | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | TSOP | 40 | 5.07 | Yes | 3 V | e3/e6 | 3A991.B.1.A | NOR TYPE | TIN/TIN BISMUTH | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.2 mm | 16 | 0.000005 A | 33554432 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 8,63 | 4K,32K | BOTTOM | YES | 18.4 mm | 12 mm |
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N25Q128A13EF740F
Micron
Package:Memory
Price: please inquire
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N25Q00AA13GSF40F
Micron
Package:Memory
Price: please inquire
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M29W320ET70ZE6F
Micron
Package:Memory
Price: please inquire
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M29W128GH70ZA6E
Micron
Package:Memory
2.601614
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M29F032D70N6T
STMicroelectronics
Package:Memory
Price: please inquire
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N25Q128A13E1241F
Micron
Package:Memory
Price: please inquire
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27C64-25/SO
Microchip
Package:Memory
Price: please inquire
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27LV256-25/L
Microchip
Package:Memory
Price: please inquire
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27C64-25/P
Microchip
Package:Memory
Price: please inquire
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N25Q128A11BSF40F
Micron
Package:Memory
Price: please inquire
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M29F040B70K6E
STMicroelectronics
Package:Memory
Price: please inquire
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M29W640GB70NA6F
Micron
Package:Memory
Price: please inquire
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M28W640HCT70N6F
Micron
Package:Memory
Price: please inquire
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