The category is 'Memory'
Memory (197)
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- Ihs Manufacturer
- JESD-30 Code
- Memory Density
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- Number of Words Code
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- Supply Current-Max:
0.02 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Lifecycle Status | Contact Plating | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Samacsys Description | Schedule B | Supply Voltage-Nom (Vsup) | Usage Level | Packaging | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Interface | Max Supply Voltage | Min Supply Voltage | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Length | Width | Radiation Hardening |
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 | Mfr Part No M29W400DB45ZE6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 45 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W400DB45ZE6F | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA-48 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.82 | Yes | 3.3 V | e1 | Yes | NOR TYPE | TIN SILVER COPPER | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.02 mA | 256KX16 | 1.2 mm | 16 | 0.0001 A | 4194304 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | BOTTOM | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W640GH70NB6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Obsolete (Last Updated: 2 years ago) | YES | 56 | 56 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W640GH70NB6F | NOR | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP56,.8,20 | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 5.6 | Compliant | Yes | 3 V | Tape & Reel | e3 | Yes | 3A991.B.1.A | NOR TYPE | Matte Tin (Sn) | 85 °C | -40 °C | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 56 | R-PDSO-G56 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | Parallel | 3.6 V | 2.7 V | 10 mA | ASYNCHRONOUS | 0.02 mA | 70 ns | 4MX16 | 1.2 mm | 16 | 64 Mb | 0.0001 A | 67108864 bit | PARALLEL | Asynchronous | FLASH | 3 V | 8 | YES | YES | YES | 128 | 64K | 4/8 words | YES | BOTTOM | YES | 18.4 mm | 14 mm | No | |||||||||||||||||||||
| Mfr Part No M29W128FL70N6E | STMicroelectronics | Datasheet | 20 | - | Min: 1 Mult: 1 | YES | 56 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W128FL70N6E | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP56,.8,20 | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | 5.82 | Yes | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 0.5 mm | compliant | R-PDSO-G56 | Not Qualified | 3/3.3 V | INDUSTRIAL | 0.02 mA | 8MX16 | 16 | 0.0001 A | 134217728 bit | PARALLEL | FLASH | 8 | YES | YES | YES | 256 | 64K | 8/16 words | YES | YES | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M28W160ECT70ZB6U | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 46 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M28W160ECT70ZB6U | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 6.39 X 6.37 MM, 0.75 MM PITCH, LEAD FREE, TFBGA-46 | BGA46,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.81 | Yes | 3 V | e1 | Yes | EAR99 | NOR TYPE | TIN SILVER COPPER | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.75 mm | compliant | 46 | R-PBGA-B46 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 1MX16 | 1.2 mm | 16 | 0.000005 A | 16777216 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 8,31 | 4K,32K | TOP | YES | 6.39 mm | 6.37 mm | ||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W640GL7ANB6F | Micron | Datasheet | 160000 | - | Min: 1 Mult: 1 | Obsolete (Last Updated: 2 years ago) | YES | 56 | 56 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W640GL7ANB6F | NOR | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP56,.8,20 | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 5.6 | Compliant | Yes | 3 V | Tape & Reel | e3 | Yes | 3A991.B.1.A | NOR TYPE | Matte Tin (Sn) | 85 °C | -40 °C | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 56 | R-PDSO-G56 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | Parallel | 3.6 V | 2.7 V | 10 mA | ASYNCHRONOUS | 0.02 mA | 70 ns | 4MX16 | 1.2 mm | 16 | 64 Mb | 0.0001 A | 67108864 bit | PARALLEL | Asynchronous | FLASH | 3 V | 8 | YES | YES | YES | 128 | 64K | 4/8 words | YES | TOP | YES | 18.4 mm | 14 mm | No | |||||||||||||||||||||
| Mfr Part No N25Q032A13ESFH0F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Obsolete (Last Updated: 2 years ago) | YES | 16 | 16 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q032A13ESFH0F | NOR | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP16,.4 | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | NOT SPECIFIED | 5.82 | Compliant | Yes | 3 V | Tape & Reel | NOR TYPE | 85 °C | -40 °C | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 108 MHz | R-PDSO-G16 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | SPI, Serial | 3.6 V | 2.7 V | SYNCHRONOUS | 0.02 mA | 4MX8 | 2.65 mm | 8 | 22 b | 32 Mb | 0.0001 A | 33554432 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256 B | 10.3 mm | 7.5 mm | ||||||||||||||||||||||||||||||||||||
| Mfr Part No M28W640HCT70ZB6F | Micron | Datasheet | 574 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | NUMONYX | Numonyx Memory Solutions | M28W640HCT70ZB6F | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Transferred | BGA | NOT SPECIFIED | 5.15 | Yes | 3 V | Yes | 3A991.B.1.A | NOR TYPE | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.75 mm | unknown | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 4MX16 | 1.2 mm | 16 | 0.000005 A | 67108864 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 8,127 | 4K,32K | 4 words | TOP | YES | 10.5 mm | 6.39 mm | |||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29DW323DB70ZE6F | Micron | Datasheet | 537 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29DW323DB70ZE6F | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA-48 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.74 | Yes | 3 V | e1 | Yes | 3A991.B.1.A | NOR TYPE | TIN SILVER COPPER | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.2 mm | 16 | 0.0001 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | BOTTOM | YES | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W400FT55N3F | Micron | Datasheet | 444 | - | Min: 1 Mult: 1 | Obsolete (Last Updated: 2 years ago) | YES | 48 | 48 | 55 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W400FT55N3F | NOR | 262144 words | 256000 | 125 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 5.66 | Compliant | Yes | 3.3 V | Automotive grade | Tape & Reel | e3 | Yes | EAR99 | NOR TYPE | MATTE TIN | 125 °C | -40 °C | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3.3 V | AUTOMOTIVE | 3 V | 2.7 V | Parallel | 3.6 V | 2.7 V | ASYNCHRONOUS | 0.02 mA | 256KX16 | 1.2 mm | 16 | 4 Mb | 0.0001 A | 4194304 bit | AEC-Q100 | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | TOP | YES | 18.4 mm | 12 mm | No | |||||||||||||||||||||||
| Mfr Part No M29W800FB7AZA6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Obsolete (Last Updated: 2 years ago) | YES | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W800FB7AZA6F | NOR | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA-48 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.46 | Compliant | Yes | 3.3 V | Tape & Reel | e1 | Yes | EAR99 | NOR TYPE | TIN SILVER COPPER | 85 °C | -40 °C | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 2.7 V | Parallel | 3.6 V | 2.7 V | ASYNCHRONOUS | 0.02 mA | 512KX16 | 1.2 mm | 16 | 8 Mb | 0.0001 A | 8388608 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | YES | 8 mm | 6 mm | No | ||||||||||||||||||||||||||
| Mfr Part No N25Q128A13BF840F | Micron | Datasheet | 11040 | - | Min: 1 Mult: 1 | YES | 8 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q128A13BF840F | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | HVSON, SOLCC8,.3 | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Obsolete | DFP | 30 | 5.73 | Yes | NOR Flash SERIAL NOR SLC 32MX4 VDFPN | 3 V | Yes | 3A991.B.1.A | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | NO LEAD | 260 | 1 | 1.27 mm | compliant | 8 | R-PDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 16MX8 | 1 mm | 8 | 0.0001 A | 134217728 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | BOTTOM | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W800FB70N3F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | EOL (Last Updated: 2 years ago) | Tin | YES | 48 | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W800FB70N3F | FLASH, NOR | 524288 words | 512000 | 125 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 7.6 | Compliant | Yes | 8542320070, 8542320070/8542320070/8542320070/8542320070/8542320070 | 3.3 V | Tape & Reel | e3 | Yes | 3A991 | NOR TYPE | Matte Tin (Sn) | 125 °C | -40 °C | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | AUTOMOTIVE | 3 V | 2.7 V | Parallel | 3.6 V | 2.7 V | 10 mA | ASYNCHRONOUS | 0.02 mA | 70 ns | 512KX16 | 1.2 mm | 16 | 8 Mb | 0.0001 A | 8388608 bit | PARALLEL | Asynchronous | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | No | ||||||||||||||||||||
| Mfr Part No MT29F2G16ABBFAH4-IT:F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Copper, Silver, Tin | Surface Mount | YES | 63 | 63 | 25 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT29F2G16ABBFAH4-IT:F | SLC NAND | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | 5.81 | Compliant | Yes | 1.8 V | SLC NAND TYPE | 85 °C | -40 °C | Flash Memories | CMOS | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B63 | Not Qualified | 1.8 V | 1.8 V | INDUSTRIAL | Parallel | 1.95 V | 1.7 V | 30 mA | 0.02 mA | 30 ns | 128MX16 | 16 | 28 b | 2 Gb | 0.00005 A | 2147483648 bit | PARALLEL | Asynchronous | 16 b | FLASH | 1.8 V | NO | NO | YES | 2K | 64K | 1K words | YES | |||||||||||||||||||||||||||||||||||||||||
| Mfr Part No NAND512W3A2SZA6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 63 | 35 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | NAND512W3A2SZA6F | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | VFBGA-63 | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | 30 | 5.73 | Yes | 3 V | e1 | 3A991.B.1.A | SLC NAND TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | R-PBGA-B63 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 64MX8 | 1.05 mm | 8 | 0.00005 A | 536870912 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 4K | 16K | 512 words | YES | 11 mm | 9 mm | ||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M25P128-VME6TG | Micron | Datasheet | 504 | - | Min: 1 Mult: 1 | YES | 8 | 54 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M25P128-VME6TG | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | 8 X 6 MM, ROHS COMPLIANT, VDFPN-8 | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Obsolete | DFP | 30 | 5.52 | Yes | 3 V | Yes | 3A991.B.1.A | NOR TYPE | MORE THAN 10000 ERASE/PROGRAM CYCLES MORE THAN 20-YEAR DATA RETENTION | 8542.32.00.51 | Flash Memories | CMOS | DUAL | NO LEAD | 260 | 1 | 1.27 mm | unknown | 8 | R-PDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 16MX8 | 1 mm | 8 | 0.0001 A | 134217728 bit | SERIAL | FLASH | 2.7 V | SPI | 10000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M28W320CB90N6 | STMicroelectronics | Datasheet | 196 | - | Min: 1 Mult: 1 | YES | 48 | 90 ns | STMICROELECTRONICS | STMicroelectronics | M28W320CB90N6 | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | 12 X 20 MM, PLASTIC, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP | 3.36 | Yes | 3 V | e0 | 3A991.B.1.A | NOR TYPE | Tin/Lead (Sn/Pb) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3,3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.2 mm | 16 | 0.000005 A | 33554432 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 8,63 | 4K,32K | BOTTOM | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W400T-120M1 | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 120 ns | STMICROELECTRONICS | STMicroelectronics | M29W400T-120M1 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOP | 0.525 INCH, PLASTIC, SO-44 | SOP44,.63 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 5.62 | Yes | 3.3 V | e3 | EAR99 | NOR TYPE | Matte Tin (Sn) | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 1.27 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 256KX16 | 3-STATE | 2.62 mm | 16 | 0.00005 A | 4194304 bit | PARALLEL | FLASH | 2.7 V | 100000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | TOP | 28.2 mm | 13.3 mm | |||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY62128BLL-55ZAI | Cypress Semiconductor | Datasheet | 4096 | - | Min: 1 Mult: 1 | YES | 32 | 32 | 55 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY62128BLL-55ZAI | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | 8 X 13.40 MM, STSOP1-32 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | 30 | 5.66 | Compliant | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 240 | 1 | 0.5 mm | not_compliant | 32 | R-PDSO-G32 | Not Qualified | 5 V | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.02 mA | 128KX8 | 3-STATE | 1.2 mm | 8 | 17 b | 1 Mb | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 11.8 mm | 8 mm | No | |||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29W160ET90ZA6T | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 90 ns | STMICROELECTRONICS | STMicroelectronics | M29W160ET90ZA6T | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Transferred | BGA | 5.38 | Yes | 3 V | EAR99 | NOR TYPE | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 1 | 0.8 mm | unknown | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 1MX16 | 1.2 mm | 16 | 0.0001 A | 16777216 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | TOP | YES | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N25Q256A11E1240F | Micron | Datasheet | 11 | - | Min: 1 Mult: 1 | EOL (Last Updated: 2 years ago) | Surface Mount | YES | 24 | 24 | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q256A11E1240F | NOR | 268435456 words | 256000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA24,5X5,40 | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | NOT SPECIFIED | 5.75 | Compliant | Yes | 1.8 V | Tape & Reel | e1 | Yes | NOR TYPE | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | SPI-COMPATIBLE SERIAL BUS INTERFACE | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 108 MHz | R-PBGA-B24 | Not Qualified | 1.8 V | 2 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.7 V | SPI, Serial | 2 V | 1.7 V | 20 mA | SYNCHRONOUS | 0.02 mA | 8 ns | 256MX1 | 1.2 mm | 1 | 1 b | 256 Mb | 0.00002 A | 268435456 bit | SERIAL | Synchronous | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256 B | 8 mm | 6 mm | No |
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M29W400DB45ZE6F
Micron
Package:Memory
Price: please inquire
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M29W640GH70NB6F
Micron
Package:Memory
Price: please inquire
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M29W128FL70N6E
STMicroelectronics
Package:Memory
Price: please inquire
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M28W160ECT70ZB6U
Micron
Package:Memory
Price: please inquire
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M29W640GL7ANB6F
Micron
Package:Memory
Price: please inquire
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N25Q032A13ESFH0F
Micron
Package:Memory
Price: please inquire
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M28W640HCT70ZB6F
Micron
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