The category is 'Memory'
Memory (240)
- All Manufacturers
- Ihs Manufacturer
- Memory Density
- Memory Width
- Number of Terminals
- Number of Words
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- Supply Current-Max
- Supply Current-Max:
0.03 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Active Read Current - Max | Address Bus Width (bit) | Automotive | Base Product Number | Brand | Chip Density (bit) | Data Rate Architecture | ECCN (US) | EU RoHS | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Lead Shape | Manufacturer | Manufacturer Part Number | Max. Access Time (ns) | Maximum Operating Supply Voltage (V) | Maximum Operating Temperature | Maximum Operating Temperature (°C) | Memory Types | Mfr | Minimum Operating Supply Voltage (V) | Minimum Operating Temperature | Minimum Operating Temperature (°C) | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of Bits/Word (bit) | Number of Words | Number of Words Code | Operating Current (mA) | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Height | Package Length | Package Shape | Package Style | Package Width | Part Life Cycle Code | Part Package Code | PCB changed | PPAP | Process Technology | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Standard Package Name | Supplier Package | Supplier Temperature Grade | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Typical Operating Supply Voltage (V) | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | Part Status | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Memory Format | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Product Type | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Standby Voltage-Min | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Product Category | Memory Organization | Length | Width |
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 | Mfr Part No M29F800FB5AM6F2 | Micron | Datasheet | 400 | - | Min: 1 Mult: 1 | YES | 44 | 55 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29F800FB5AM6F2 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP44,.63 | SOP44,.63 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.56 | Yes | 5 V | Automotive grade | Yes | EAR99 | NOR TYPE | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 512KX16 | 3 mm | 16 | 0.00012 A | 8388608 bit | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | YES | 28.5 mm | 12.6 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No H27U1G8F2BTR-BC | Hynix | Datasheet | 57 | - | Min: 1 Mult: 1 | YES | 48 | 20 ns | SK HYNIX INC | SK Hynix Inc | H27U1G8F2BTR-BC | 134217728 words | 128000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | 8.56 | Yes | SLC NAND TYPE | Flash Memories | CMOS | DUAL | GULL WING | 0.5 mm | compliant | R-PDSO-G48 | Not Qualified | 3/3.3 V | COMMERCIAL | 0.03 mA | 128MX8 | 8 | 0.00005 A | 1073741824 bit | PARALLEL | FLASH | NO | NO | YES | 1K | 128K | 2K words | YES | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 28C04A20-L | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 200 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | 28C04A-20/L | 512 words | 512 | 70 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | NOT SPECIFIED | 5.89 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 10K WRITE/ERASE ENDURANCE MIN; DATA RETENTION >200 YEARS | 8542.32.00.51 | EEPROMs | CMOS | QUAD | J BEND | NOT SPECIFIED | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 512X8 | 3-STATE | 3.56 mm | 8 | 0.0001 A | 4096 bit | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 1 ms | 200 | YES | NO | NO | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29LV160DB-70EC | AMD | Datasheet | 7723 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | ADVANCED MICRO DEVICES INC | AMD | AM29LV160DB-70EC | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSOP1 | MO-142DD, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP1 | 4.25 | No | 3 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | MIN 1000K WRITE CYCLES; BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 1MX16 | 1.2 mm | 16 | 0.000005 A | 16777216 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29F200FB55N3F2 | Micron | Datasheet | 1607 | - | Min: 1 Mult: 1 | YES | 48 | 55 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29F200FB55N3F2 | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | NOT SPECIFIED | 5.75 | Yes | 5 V | Automotive grade | e3 | Yes | EAR99 | NOR TYPE | Matte Tin (Sn) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 5.5 V | 5 V | AUTOMOTIVE | 4.5 V | ASYNCHRONOUS | 0.03 mA | 128KX16 | 1.2 mm | 16 | 0.00012 A | 2097152 bit | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,3 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT45V512KW16PEGA-70WT | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT45V512KW16PEGA-70WT | 524288 words | 512000 | 85 °C | -30 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 5.84 | Yes | 3 V | e1 | 3A991.B.2.A | TIN SILVER COPPER | 8542.32.00.41 | Other Memory ICs | CMOS | BOTTOM | BALL | 1 | 0.75 mm | unknown | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | 0.03 mA | 512KX16 | 3-STATE | 1 mm | 16 | 0.00015 A | 8388608 bit | PARALLEL | COMMON | PSEUDO STATIC RAM | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29LV800DB-70EF | AMD | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | SPANSION INC | Spansion | AM29LV800DB-70EF | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | LEAD FREE, MO-142DD, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP1 | 40 | 5.07 | Yes | 3 V | e3 | Yes | EAR99 | NOR TYPE | Matte Tin (Sn) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 512KX16 | 1.2 mm | 16 | 0.000005 A | 8388608 bit | PARALLEL | FLASH | 3 V | 1000000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M28C64-15KA6T | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 150 ns | STMICROELECTRONICS | STMicroelectronics | M28C64-15KA6T | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | NOT SPECIFIED | 5.9 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION | 8542.32.00.51 | EEPROMs | CMOS | QUAD | J BEND | NOT SPECIFIED | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 8KX8 | 3-STATE | 3.56 mm | 8 | 0.0001 A | 65536 bit | PARALLEL | EEPROM | 5 V | 3 ms | 40 | YES | YES | NO | 64 words | YES | 13.995 mm | 11.455 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29LV640DU90RPCF | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 90 ns | SPANSION INC | Spansion | AM29LV640DU90RPCF | 3 | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-64 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | 40 | 5.4 | Yes | 3.3 V | e1 | Yes | 3A991.B.1.A | NOR TYPE | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | 64 | R-PBGA-B64 | Not Qualified | 3.6 V | 3.3,3/5 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.03 mA | 4MX16 | 1.4 mm | 16 | 0.000005 A | 67108864 bit | PARALLEL | FLASH | 3 V | YES | YES | YES | 128 | 32K | YES | BOTTOM/TOP | YES | 13 mm | 11 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29F400FB5AM6F2 | Micron | Datasheet | 160000 | - | Min: 1 Mult: 1 | YES | 44 | 55 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29F400FB5AM6F2 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP44,.63 | SOP44,.63 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.72 | Yes | 5 V | Automotive grade | Yes | EAR99 | NOR TYPE | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 256KX16 | 3 mm | 16 | 0.00012 A | 4194304 bit | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | BOTTOM | YES | 28.5 mm | 12.6 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29F160FT5AN6F2 | Micron | Datasheet | 16 | - | Min: 1 Mult: 1 | YES | 48 | 55 ns | NUMONYX | Numonyx Memory Solutions | M29F160FT5AN6F2 | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP1-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP1 | NOT SPECIFIED | 5.25 | Yes | 5 V | Automotive grade | EAR99 | NOR TYPE | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 1MX16 | 1.2 mm | 16 | 0.00012 A | 16777216 bit | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | TOP | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29F800FT5AN6F2 | Micron | Datasheet | 8000 | - | Min: 1 Mult: 1 | YES | 48 | 55 ns | NUMONYX | Numonyx Memory Solutions | M29F800FT5AN6F2 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP1-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP1 | NOT SPECIFIED | 5.15 | Yes | 5 V | Automotive grade | EAR99 | NOR TYPE | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 512KX16 | 1.2 mm | 16 | 0.00012 A | 8388608 bit | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | TOP | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29F800FB55N3F2 | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 55 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29F800FB55N3F2 | 524288 words | 512000 | 125 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | NOT SPECIFIED | 5.23 | Yes | 5 V | Automotive grade | e3 | Yes | EAR99 | NOR TYPE | Matte Tin (Sn) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 5.5 V | 5 V | AUTOMOTIVE | 4.5 V | ASYNCHRONOUS | 0.03 mA | 512KX16 | 1.2 mm | 16 | 0.00012 A | 8388608 bit | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29LV001BB70JC | AMD | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | ADVANCED MICRO DEVICES INC | AMD | AM29LV001BB-70JC | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Transferred | LCC | 5.27 | No | 3 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION | 8542.32.00.51 | Flash Memories | CMOS | QUAD | J BEND | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 128KX8 | 3.556 mm | 8 | 0.000005 A | 1048576 bit | PARALLEL | FLASH | 3 V | 20 | YES | YES | YES | 1,2,7 | 8K,4K,16K | BOTTOM | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29F800FT55M3F2 | Micron | Datasheet | 8000 | - | Min: 1 Mult: 1 | YES | 44 | 55 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29F800FT55M3F2 | 524288 words | 512000 | 125 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP44,.63 | SOP44,.63 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.58 | Yes | 5 V | Automotive grade | Yes | EAR99 | NOR TYPE | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 5.5 V | 5 V | AUTOMOTIVE | 4.5 V | ASYNCHRONOUS | 0.03 mA | 512KX16 | 3 mm | 16 | 0.00012 A | 8388608 bit | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | TOP | YES | 28.5 mm | 12.6 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 28C64AT-25I/SO | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 250 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | 28C64AT-25I/SO | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.4 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.75 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; BULK ERASE; DATA RETENTION > 10 YEARS | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 8KX8 | 3-STATE | 8 | 0.0001 A | 65536 bit | PARALLEL | EEPROM | 5 V | 1 ms | 10 | YES | NO | NO | YES | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MX29LV400BTI-70 | Macronix | Datasheet | 1424 |
| Min: 1 Mult: 1 | YES | 48 | 70 ns | MACRONIX INTERNATIONAL CO LTD | Macronix International Co Ltd | MX29LV400BTI-70 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | 5.5 | Non-Compliant | 3 V | EAR99 | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 256KX16 | 1.2 mm | 16 | 0.000005 A | 4194304 bit | PARALLEL | FLASH | 3 V | 100000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | BOTTOM | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29LV116DT-90EC | AMD | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 90 ns | ADVANCED MICRO DEVICES INC | AMD | AM29LV116DT-90EC | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | TSOP1 | MO-142CD, TSOP-40 | TSSOP40,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP1 | 7.9 | No | 3 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | 40 | R-PDSO-G40 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 2MX8 | 1.2 mm | 8 | 0.000005 A | 16777216 bit | PARALLEL | FLASH | 3 V | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | TOP | YES | 18.4 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29F800FB55M3F2 | Alliance Memory, Inc. | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 44-SOIC (0.496", 12.60mm Width) | YES | 44-SO | 44 | 55 ns | 30 mA | M29F800 | Alliance Memory | 500 | MICRON TECHNOLOGY INC | Parallel | Alliance Memory | M29F800FB55M3F2 | + 125 C | Non-Volatile | Alliance Memory, Inc. | - 40 C | Yes | SMD/SMT | 524288 words | 512000 | 125 °C | -40 °C | Tape & Reel (TR) | PLASTIC/EPOXY | SOP | SOP, SOP44,.63 | SOP44,.63 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | Obsolete | NOT SPECIFIED | 5.58 | Yes | 5.5 V | 4.5 V | 5 V | Automotive grade | -40°C ~ 125°C (TA) | Cut Tape | Automotive, AEC-Q100 | Yes | EAR99 | NOR TYPE | BOTTOM BOOT BLOCK | 8542.32.00.51 | Memory & Data Storage | 4.5V ~ 5.5V | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 5.5 V | 5 V | AUTOMOTIVE | 4.5 V | 8Mbit | ASYNCHRONOUS | 0.03 mA | 55 ns | FLASH | 8 bit/16 bit | 1 M x 8/512 k x 16 | 3 mm | 16 | 55ns | NOR Flash | 0.00012 A | 8388608 bit | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | YES | NOR Flash | 1M x 8, 512K x 16 | 28.5 mm | 12.6 mm | |||||||||||||||||||||||||||||||||||||||||
| Mfr Part No K6X4008C1F-BF55T00 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | 19 | No | 4M | SDR | 3A991.b.2.a | Compliant | SAMSUNG SEMICONDUCTOR INC | Gull-wing | Samsung Semiconductor | K6X4008C1F-BF55T00 | 55 | 5.5 | 85 | 4.5 | -40 | Surface Mount | 8 | 512K | 512000 | 30 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP32,.56 | SOP32,.56 | 2.74 | 20.47 | RECTANGULAR | SMALL OUTLINE | 11.43 | Obsolete | 32 | No | CMOS | 5.81 | Yes | SOP | SOP | Industrial | 5 V | Asynchronous | 5 | Tape and Reel | Obsolete | SRAMs | CMOS | DUAL | GULL WING | 1.27 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 5 V | INDUSTRIAL | 1 | ASYNCHRONOUS | 0.03 mA | 512KX8 | 3-STATE | 8 | 0.000012 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V |
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Package:Memory
Price: please inquire
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Package:Memory
Price: please inquire
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Package:Memory
Price: please inquire