The category is 'Memory'
Memory (240)
- All Manufacturers
- Ihs Manufacturer
- Memory Density
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Organization
- Package Body Material
- Package Code
- Package Style
- Reach Compliance Code
- Supply Current-Max
- Supply Current-Max:
0.03 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Usage Level | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Organization | Output Characteristics | Seated Height-Max | Memory Width | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Standby Voltage-Min | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Length | Width | Radiation Hardening |
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 | Mfr Part No GLS29VF040-70-4C-NHE | Greenliant | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | GREENLIANT SYSTEMS LTD | Greenliant Systems Ltd | GLS29VF040-70-4C-NHE | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Contact Manufacturer | 5.78 | Yes | NOR TYPE | Flash Memories | CMOS | QUAD | J BEND | 1.27 mm | compliant | R-PQCC-J32 | Not Qualified | 3/3.3 V | COMMERCIAL | 0.03 mA | 512KX8 | 8 | 0.00003 A | 4194304 bit | PARALLEL | FLASH | YES | YES | 4K | 128 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GLS29SF040-55-4C-NHE | Greenliant | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | GREENLIANT SYSTEMS LTD | Greenliant Systems Ltd | GLS29SF040-55-4C-NHE | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Contact Manufacturer | 5.77 | Yes | 5 V | NOR TYPE | Flash Memories | CMOS | QUAD | J BEND | 1.27 mm | compliant | R-PQCC-J32 | Not Qualified | 5 V | COMMERCIAL | 0.03 mA | 512KX8 | 8 | 0.0001 A | 4194304 bit | PARALLEL | FLASH | YES | YES | 4K | 128 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No HN58V257AT12E | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 120 ns | RENESAS TECHNOLOGY CORP | Renesas Electronics Corporation | HN58V257AT-12E | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP32,.56,20 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | NOT SPECIFIED | 5.78 | Yes | 3 V | Yes | EAR99 | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 5.5 V | 3/5 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 32KX8 | 1.2 mm | 8 | 0.00002 A | 262144 bit | PARALLEL | EEPROM | 3 V | 10 ms | YES | YES | NO | 64 words | YES | 12.4 mm | 8 mm | ||||||||||||||||||||||||||||||||||||
| Mfr Part No MT45W4MW16BBB-706WT | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT45W4MW16BBB-706WT | 4194304 words | 4000000 | 85 °C | -30 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA54,6X9,30 | BGA54,6X9,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.8 | Yes | 1.8 V | e1 | 3A991.B.2.A | TIN SILVER COPPER | SYNCHRONOUS BURST MODE POSSIBLE | 8542.32.00.41 | Other Memory ICs | CMOS | BOTTOM | BALL | 260 | 1 | 0.75 mm | unknown | 54 | R-PBGA-B54 | Not Qualified | 1.95 V | 1.8,1.8/3 V | OTHER | 1.7 V | ASYNCHRONOUS | 0.03 mA | 4MX16 | 3-STATE | 1 mm | 16 | 0.00012 A | 67108864 bit | PARALLEL | COMMON | PSEUDO STATIC RAM | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||
| Mfr Part No HN58V256ATI-12 | Hitachi | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 120 ns | HITACHI LTD | Hitachi Ltd | HN58V256ATI-12 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP28,.53,22 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP | 8.4 | Non-Compliant | 3 V | EAR99 | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | 1 | 0.55 mm | unknown | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 3/5 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 32KX8 | 1.2 mm | 8 | 0.00002 A | 262144 bit | PARALLEL | EEPROM | 3 V | 100000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 11.8 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||
| Mfr Part No 28C64A-25IL | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 250 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | 28C64A-25I/L | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | NOT SPECIFIED | 8.67 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; BULK ERASE; DATA RETENTION > 10 YEARS | 8542.32.00.51 | EEPROMs | CMOS | QUAD | J BEND | NOT SPECIFIED | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 8KX8 | 3-STATE | 3.56 mm | 8 | 0.0001 A | 65536 bit | PARALLEL | EEPROM | 5 V | 1 ms | 10 | YES | NO | NO | YES | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||
| Mfr Part No GLS29SF040-55-4C-WHE | Greenliant | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | GREENLIANT SYSTEMS LTD | Greenliant Systems Ltd | GLS29SF040-55-4C-WHE | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP32,.56,20 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | NOT SPECIFIED | 5.73 | Yes | 5 V | Yes | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 0.5 mm | compliant | R-PDSO-G32 | Not Qualified | 5 V | COMMERCIAL | 0.03 mA | 512KX8 | 8 | 0.0001 A | 4194304 bit | PARALLEL | FLASH | 5 V | YES | YES | 4K | 128 | ||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C16-25TC | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 250 ns | ATMEL CORP | Atmel Corporation | AT28C16-25TC | 3 | 2048 words | 2000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP28,.53,22 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | 30 | 5.9 | Non-Compliant | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; 100K ENDURANCE WRITE CYCLES; DATA RETENTION > 10 YEARS | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | 240 | 1 | 0.55 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 2KX8 | 3-STATE | 1.2 mm | 8 | 0.0001 A | 16384 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 10 | YES | NO | NO | YES | 11.8 mm | 8 mm | ||||||||||||||||||||||||||||||
| Mfr Part No CAT28C64BWI90 | ON Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 90 ns | ON SEMICONDUCTOR | ON Semiconductor | CAT28C64BWI-90 | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.4 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Active | SOIC | 5.49 | Yes | 5 V | e3 | MATTE TIN | EEPROMs | CMOS | DUAL | GULL WING | 1 | 1.27 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 8KX8 | 2.65 mm | 8 | 0.0001 A | 65536 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 5 ms | YES | YES | NO | 32 words | 17.9 mm | 7.5 mm | ||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29LV641DL120REI | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 120 ns | ADVANCED MICRO DEVICES INC | AMD | AM29LV641DL120REI | 3 | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP | NOT SPECIFIED | 5.14 | No | 3.3 V | e0 | 3A991.B.1.A | NOR TYPE | Tin/Lead (Sn/Pb) | HARDWARE DATA PROTECTION/RESET PIN, 1 MILLION ERASE CYCLES PER SECTOR | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3.3,3/5 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.03 mA | 4MX16 | 1.2 mm | 16 | 0.000005 A | 67108864 bit | PARALLEL | FLASH | 3 V | YES | YES | YES | 128 | 32K | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||
| Mfr Part No HN58C256AP85E | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 85 ns | RENESAS TECHNOLOGY CORP | Renesas Electronics Corporation | HN58C256AP-85E | 1 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 5.67 | Yes | 5 V | e6 | Yes | EAR99 | TIN BISMUTH | 8542.32.00.51 | EEPROMs | CMOS | DUAL | THROUGH-HOLE | 260 | 1 | 2.54 mm | unknown | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 32KX8 | 5.7 mm | 8 | 0.00002 A | 262144 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 35.6 mm | 15.24 mm | |||||||||||||||||||||||||||||||||
| Mfr Part No HM62V16514LTTI-5SL | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 55 ns | HITACHI LTD | Hitachi Ltd | HM62V16514LTTI-5SL | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP2 | 5.53 | 3 V | 3A991.B.2.A | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 1 | 0.8 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 512KX16 | 3-STATE | 1.2 mm | 16 | 0.00001 A | 8388608 bit | PARALLEL | COMMON | STANDARD SRAM | 2.7 V | 18.41 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 27C256-15IL | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 150 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | 27C256-15I/L | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 40 | 7.57 | Non-Compliant | Yes | 5 V | e3 | EAR99 | MATTE TIN | DATA RETENTION >200 YEARS | 8542.32.00.71 | OTP ROMs | CMOS | QUAD | J BEND | 260 | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 32KX8 | 3-STATE | 3.56 mm | 8 | 0.0001 A | 262144 bit | PARALLEL | COMMON | OTP ROM | 13 V | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||
| Mfr Part No 27C256-12ISO | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 120 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | 27C256-12I/SO | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.300 INCH, PLASTIC, SOIC-28 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 7.95 | Non-Compliant | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | DATA RETENTION >200 YEARS | 8542.32.00.71 | OTP ROMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 32KX8 | 3-STATE | 2.64 mm | 8 | 0.0001 A | 262144 bit | PARALLEL | COMMON | OTP ROM | 13 V | 17.87 mm | 7.49 mm | |||||||||||||||||||||||||||||||||||
| Mfr Part No HN58C256AT10E | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 28 | 28 | 100 ns | RENESAS ELECTRONICS CORP | Renesas Electronics Corporation | HN58C256AT-10E | Renesas Electronics America Inc | 3 | 32768 words | 32000 | 70 °C | Bulk | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP28,.53,22 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | TSOP | Active | NOT SPECIFIED | 5.59 | Compliant | Yes | 5 V | * | Yes | EAR99 | 70 °C | 0 °C | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 5 V | 5.5 V | 5 V | COMMERCIAL | 4.5 V | Parallel | 5.5 V | 4.5 V | 30 mA | ASYNCHRONOUS | 0.03 mA | 100 ns | 32KX8 | 1.2 mm | 8 | 256 kb | 0.00002 A | 262144 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 11.8 mm | 8 mm | No | ||||||||||||||||||
| Mfr Part No 27C256-20I/SO | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 200 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | 27C256-20I/SO | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.300 INCH, PLASTIC, SOIC-28 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 8.53 | Non-Compliant | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | DATA RETENTION >200 YEARS | 8542.32.00.71 | OTP ROMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 32KX8 | 3-STATE | 2.64 mm | 8 | 0.0001 A | 262144 bit | PARALLEL | COMMON | OTP ROM | 13 V | 17.87 mm | 7.49 mm | |||||||||||||||||||||||||||||||||||
| Mfr Part No 28C64AF-20IL | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 200 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | 28C64AF-20I/L | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | NOT SPECIFIED | 8.67 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; BULK ERASE; DATA RETENTION > 10 YEARS | 8542.32.00.51 | EEPROMs | CMOS | QUAD | J BEND | NOT SPECIFIED | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 8KX8 | 3-STATE | 3.56 mm | 8 | 0.0001 A | 65536 bit | PARALLEL | EEPROM | 5 V | 0.2 ms | 10 | YES | NO | NO | YES | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||
| Mfr Part No 28C64AFT-15ISO | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 150 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | 28C64AFT-15I/SO | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.4 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 8.67 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; BULK ERASE; DATA RETENTION > 10 YEARS | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 8KX8 | 3-STATE | 8 | 0.0001 A | 65536 bit | PARALLEL | EEPROM | 5 V | 0.2 ms | 10 | YES | NO | NO | YES | |||||||||||||||||||||||||||||||||||
| Mfr Part No M29F160FB55N3F2 | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 55 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29F160FB55N3F2 | 1048576 words | 1000000 | 125 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | 30 | 5.26 | Yes | 5 V | Automotive grade | e3 | Yes | EAR99 | NOR TYPE | MATTE TIN | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 5.5 V | 5 V | AUTOMOTIVE | 4.5 V | ASYNCHRONOUS | 0.03 mA | 1MX16 | 1.2 mm | 16 | 0.00012 A | 16777216 bit | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||
| Mfr Part No 28C64A15I/SO | Rochester Electronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 150 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | 28C64A-15I/SO | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.4 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.75 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; BULK ERASE; DATA RETENTION > 10 YEARS | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 8KX8 | 3-STATE | 8 | 0.0001 A | 65536 bit | PARALLEL | EEPROM | 5 V | 1 ms | 10 | YES | NO | NO | YES |
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GLS29VF040-70-4C-NHE
Greenliant
Package:Memory
Price: please inquire
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GLS29SF040-55-4C-NHE
Greenliant
Package:Memory
Price: please inquire
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HN58V257AT12E
Renesas
Package:Memory
Price: please inquire
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MT45W4MW16BBB-706WT
Micron
Package:Memory
Price: please inquire
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HN58V256ATI-12
Hitachi
Package:Memory
Price: please inquire
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28C64A-25IL
Microchip
Package:Memory
Price: please inquire
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GLS29SF040-55-4C-WHE
Greenliant
Package:Memory
Price: please inquire
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AT28C16-25TC
Atmel
Package:Memory
Price: please inquire
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CAT28C64BWI90
ON Semiconductor
Package:Memory
Price: please inquire
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AM29LV641DL120REI
Cypress Semiconductor
Package:Memory
Price: please inquire
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HN58C256AP85E
Renesas
Package:Memory
Price: please inquire
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HM62V16514LTTI-5SL
Renesas
Package:Memory
Price: please inquire
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27C256-15IL
Microchip
Package:Memory
Price: please inquire
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27C256-12ISO
Microchip
Package:Memory
Price: please inquire
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HN58C256AT10E
Renesas
Package:Memory
Price: please inquire
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27C256-20I/SO
Microchip
Package:Memory
Price: please inquire
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28C64AF-20IL
Microchip
Package:Memory
Price: please inquire
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28C64AFT-15ISO
Microchip
Package:Memory
Price: please inquire
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M29F160FB55N3F2
Micron
Package:Memory
Price: please inquire
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28C64A15I/SO
Rochester Electronics
Package:Memory
Price: please inquire