The category is 'Memory'

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  • Supply Current-Max:

    0.03 mA

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Ihs Manufacturer

Manufacturer

Manufacturer Part Number

Memory Types

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Power Supplies

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Toggle Bit

Command User Interface

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Sector Size

Page Size

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Common Flash Interface

Length

Width

Radiation Hardening

Lead Free

27C256-12IP

Mfr Part No

27C256-12IP

Microchip Datasheet

-

-

Min: 1

Mult: 1

NO

28

120 ns

MICROCHIP TECHNOLOGY INC

Microchip Technology Inc

27C256-12I/P

32768 words

32000

85 °C

-40 °C

PLASTIC/EPOXY

DIP

0.600 INCH, PLASTIC, DIP-28

DIP28,.6

RECTANGULAR

IN-LINE

Obsolete

DIP

NOT SPECIFIED

5.13

Non-Compliant

No

5 V

e0

EAR99

Tin/Lead (Sn/Pb)

DATA RETENTION >200 YEARS

8542.32.00.71

OTP ROMs

CMOS

DUAL

THROUGH-HOLE

NOT SPECIFIED

1

2.54 mm

unknown

28

R-PDIP-T28

Not Qualified

5.5 V

5 V

INDUSTRIAL

4.5 V

ASYNCHRONOUS

0.03 mA

32KX8

3-STATE

4.83 mm

8

0.0001 A

262144 bit

PARALLEL

COMMON

OTP ROM

13 V

36.32 mm

15.24 mm

MT29F2G08ABAFAWP:F

Mfr Part No

MT29F2G08ABAFAWP:F

Micron Datasheet

-

-

Min: 1

Mult: 1

Tin

Surface Mount

YES

48

48

25 ns

MICRON TECHNOLOGY INC

Micron Technology Inc

MT29F2G08ABAFAWP:F

SLC NAND

268435456 words

256000000

70 °C

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Obsolete

5.81

Compliant

Yes

SLC NAND TYPE

70 °C

0 °C

Flash Memories

CMOS

DUAL

GULL WING

0.5 mm

compliant

R-PDSO-G48

Not Qualified

3.3 V

3/3.3 V

COMMERCIAL

Parallel

3.6 V

2.7 V

30 mA

0.03 mA

30 ns

256MX8

8

29 b

2 Gb

0.0001 A

2147483648 bit

PARALLEL

Asynchronous

8 b

FLASH

NO

NO

YES

2K

128K

2 kB

YES

No

GLS29VF020-70-4C-NHE

Mfr Part No

GLS29VF020-70-4C-NHE

Greenliant Datasheet

-

-

Min: 1

Mult: 1

YES

32

70 ns

GREENLIANT SYSTEMS LTD

Greenliant Systems Ltd

GLS29VF020-70-4C-NHE

262144 words

256000

70 °C

PLASTIC/EPOXY

QCCJ

QCCJ, LDCC32,.5X.6

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

Contact Manufacturer

5.74

Yes

NOR TYPE

Flash Memories

CMOS

QUAD

J BEND

1.27 mm

compliant

R-PQCC-J32

Not Qualified

3/3.3 V

COMMERCIAL

0.03 mA

256KX8

8

0.00003 A

2097152 bit

PARALLEL

FLASH

YES

YES

NO

2K

128

MT29F2G08ABAFAH4:F

Mfr Part No

MT29F2G08ABAFAH4:F

Micron Datasheet

-

-

Min: 1

Mult: 1

Copper, Silver, Tin

Surface Mount

YES

63

63

25 ns

MICRON TECHNOLOGY INC

Micron Technology Inc

MT29F2G08ABAFAH4:F

SLC NAND

268435456 words

256000000

70 °C

PLASTIC/EPOXY

FBGA

FBGA, BGA63,10X12,32

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

Obsolete

5.81

Compliant

Yes

SLC NAND TYPE

70 °C

0 °C

Flash Memories

CMOS

BOTTOM

BALL

0.8 mm

compliant

R-PBGA-B63

Not Qualified

3.3 V

3/3.3 V

COMMERCIAL

Parallel

3.6 V

2.7 V

30 mA

0.03 mA

30 ns

256MX8

8

29 b

2 Gb

0.0001 A

2147483648 bit

PARALLEL

Asynchronous

8 b

FLASH

NO

NO

YES

2K

128K

2 kB

YES

AT28C16-25PC

Mfr Part No

AT28C16-25PC

Atmel Datasheet

-

-

Min: 1

Mult: 1

NO

24

24

250 ns

ATMEL CORP

Atmel Corporation

AT28C16-25PC

2048 words

2000

70 °C

PLASTIC/EPOXY

DIP

DIP, DIP24,.6

DIP24,.6

RECTANGULAR

IN-LINE

Obsolete

DIP

NOT SPECIFIED

5.47

Compliant

No

5 V

e0

No

EAR99

Tin/Lead (Sn/Pb)

AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS

8542.32.00.51

EEPROMs

CMOS

DUAL

THROUGH-HOLE

NOT SPECIFIED

1

2.54 mm

compliant

24

R-PDIP-T24

Not Qualified

5.5 V

5 V

COMMERCIAL

4.5 V

ASYNCHRONOUS

0.03 mA

2KX8

3-STATE

5.59 mm

8

0.0001 A

16384 bit

PARALLEL

EEPROM

5 V

10000 Write/Erase Cycles

1 ms

10

YES

NO

NO

31.9 mm

15.24 mm

CAT28C256NI-12

Mfr Part No

CAT28C256NI-12

ON Semiconductor Datasheet

-

-

Min: 1

Mult: 1

YES

32

32

120 ns

CATALYST SEMICONDUCTOR INC

Catalyst Semiconductor

CAT28C256NI-12

3

32768 words

32000

85 °C

-40 °C

PLASTIC/EPOXY

QCCJ

QCCJ, LDCC32,.5X.6

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

Transferred

QFJ

30

5.04

Compliant

No

5 V

e0

EAR99

Tin/Lead (Sn/Pb)

85 °C

-40 °C

8542.32.00.51

EEPROMs

CMOS

QUAD

J BEND

240

1

1.27 mm

unknown

32

R-PQCC-J32

Not Qualified

5.5 V

5 V

INDUSTRIAL

4.5 V

Parallel

5.5 V

4.5 V

32 kB

ASYNCHRONOUS

0.03 mA

120 ns

32KX8

3.55 mm

8

256 kb

0.00015 A

262144 bit

PARALLEL

EEPROM

5 V

100000 Write/Erase Cycles

5 ms

YES

YES

NO

64 words

13.965 mm

11.425 mm

No

28C64A-20ISO

Mfr Part No

28C64A-20ISO

Microchip Datasheet

-

-

Min: 1

Mult: 1

YES

28

200 ns

MICROCHIP TECHNOLOGY INC

Microchip Technology Inc

28C64A-20I/SO

8192 words

8000

85 °C

-40 °C

PLASTIC/EPOXY

SOP

SOP, SOP28,.4

SOP28,.4

RECTANGULAR

SMALL OUTLINE

Obsolete

SOIC

NOT SPECIFIED

5.75

No

5 V

e0

EAR99

Tin/Lead (Sn/Pb)

AUTOMATIC WRITE; BULK ERASE; DATA RETENTION > 10 YEARS

8542.32.00.51

EEPROMs

CMOS

DUAL

GULL WING

NOT SPECIFIED

1

1.27 mm

unknown

28

R-PDSO-G28

Not Qualified

5.5 V

5 V

INDUSTRIAL

4.5 V

ASYNCHRONOUS

0.03 mA

8KX8

3-STATE

8

0.0001 A

65536 bit

PARALLEL

EEPROM

5 V

1 ms

10

YES

NO

NO

YES

MT45W4MW16BCGB-708LWT

Mfr Part No

MT45W4MW16BCGB-708LWT

Micron Datasheet

-

-

Min: 1

Mult: 1

YES

54

70 ns

MICRON TECHNOLOGY INC

Micron Technology Inc

MT45W4MW16BCGB-708LWT

4194304 words

4000000

85 °C

-30 °C

PLASTIC/EPOXY

VFBGA

VFBGA, BGA54,6X9,30

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Obsolete

BGA

30

5.79

Yes

1.8 V

e1

3A991.B.2.A

TIN SILVER COPPER

8542.32.00.41

Other Memory ICs

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

54

R-PBGA-B54

Not Qualified

1.95 V

1.8,1.8/3 V

OTHER

1.7 V

SYNCHRONOUS

0.03 mA

4MX16

3-STATE

1 mm

16

0.00012 A

67108864 bit

PARALLEL

COMMON

PSEUDO STATIC RAM

8 mm

6 mm

NM27C040Q150

Mfr Part No

NM27C040Q150

National Semiconductor Datasheet

-

-

Min: 1

Mult: 1

NO

32

150 ns

NATIONAL SEMICONDUCTOR CORP

National Semiconductor Corporation

NM27C040Q150

524288 words

512000

70 °C

CERAMIC, GLASS-SEALED

WDIP

WINDOWED, CERAMIC, DIP-32

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

Transferred

5.32

Non-Compliant

No

5 V

e0

EAR99

Tin/Lead (Sn/Pb)

8542.32.00.61

EPROMs

CMOS

DUAL

THROUGH-HOLE

1

2.54 mm

compliant

R-GDIP-T32

Not Qualified

5.5 V

5 V

COMMERCIAL

4.5 V

ASYNCHRONOUS

0.03 mA

512KX8

3-STATE

5.969 mm

8

0.0001 A

4194304 bit

PARALLEL

COMMON

UVPROM

15.24 mm

MT29F2G08AACWP:C

Mfr Part No

MT29F2G08AACWP:C

Micron Datasheet

-

-

Min: 1

Mult: 1

YES

48

18 ns

MICRON TECHNOLOGY INC

Micron Technology Inc

MT29F2G08AACWP:C

268435456 words

256000000

70 °C

PLASTIC/EPOXY

TSOP1

LEAD FREE, PLASTIC, TSOP1-48

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Obsolete

TSOP1

30

8.52

Yes

3.3 V

e3

3A991.B.1.A

SLC NAND TYPE

Matte Tin (Sn)

8542.32.00.51

Flash Memories

CMOS

DUAL

GULL WING

260

1

0.5 mm

unknown

48

R-PDSO-G48

Not Qualified

3.6 V

3/3.3 V

COMMERCIAL

2.7 V

ASYNCHRONOUS

0.03 mA

256MX8

1.2 mm

8

0.00005 A

2147483648 bit

PARALLEL

FLASH

3 V

NO

NO

YES

2K

128K

2K words

YES

18.4 mm

12 mm

AT28C64E-15DC

Mfr Part No

AT28C64E-15DC

Atmel Datasheet

-

-

Min: 1

Mult: 1

NO

28

150 ns

ATMEL CORP

Atmel Corporation

AT28C64E-15DC

8192 words

8000

70 °C

CERAMIC, GLASS-SEALED

DIP

DIP, DIP28,.6

DIP28,.6

RECTANGULAR

IN-LINE

Obsolete

DIP

NOT SPECIFIED

5.8

Non-Compliant

No

5 V

e0

No

EAR99

Tin/Lead (Sn/Pb)

AUTOMATIC WRITE; 100K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS

8542.32.00.51

EEPROMs

CMOS

DUAL

THROUGH-HOLE

NOT SPECIFIED

1

2.54 mm

compliant

28

R-GDIP-T28

Not Qualified

5.5 V

5 V

COMMERCIAL

4.5 V

ASYNCHRONOUS

0.03 mA

8KX8

3-STATE

5.72 mm

8

0.0001 A

65536 bit

PARALLEL

EEPROM

5 V

100000 Write/Erase Cycles

0.2 ms

10

YES

NO

NO

YES

37.25 mm

15.24 mm

CAT28F010HI-12T

Mfr Part No

CAT28F010HI-12T

ON Semiconductor Datasheet

-

-

Min: 1

Mult: 1

YES

32

32

120 ns

CATALYST SEMICONDUCTOR INC

Catalyst Semiconductor

CAT28F010HI-12T

NOR

2A

131072 words

128000

85 °C

-40 °C

PLASTIC/EPOXY

TSOP1

8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Transferred

TSOP

40

5.14

Compliant

Yes

5 V

Tape & Reel

e3

EAR99

NOR TYPE

MATTE TIN

85 °C

-40 °C

8542.32.00.51

Flash Memories

CMOS

DUAL

GULL WING

260

1

0.5 mm

unknown

32

R-PDSO-G32

Not Qualified

5 V

5.5 V

5 V

INDUSTRIAL

4.5 V

Parallel

5.5 V

4.5 V

128 kB

ASYNCHRONOUS

0.03 mA

8 b

128KX8

1.2 mm

8

17 b

1 Mb

0.0001 A

1048576 bit

PARALLEL

FLASH

12 V

100000 Write/Erase Cycles

NO

NO

YES

18.4 mm

8 mm

No

GLS29VF040-70-4I-NHE

Mfr Part No

GLS29VF040-70-4I-NHE

Greenliant Datasheet

-

-

Min: 1

Mult: 1

YES

32

70 ns

GREENLIANT SYSTEMS LTD

Greenliant Systems Ltd

GLS29VF040-70-4I-NHE

3

524288 words

512000

85 °C

-40 °C

PLASTIC/EPOXY

QCCJ

QCCJ, LDCC32,.5X.6

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

Contact Manufacturer

5.78

Yes

e3

NOR TYPE

Matte Tin (Sn) - annealed

Flash Memories

CMOS

QUAD

J BEND

1.27 mm

compliant

R-PQCC-J32

Not Qualified

3/3.3 V

INDUSTRIAL

0.03 mA

512KX8

8

0.00003 A

4194304 bit

PARALLEL

FLASH

YES

YES

4K

128

AM29LV641DH90REF

Mfr Part No

AM29LV641DH90REF

Cypress Semiconductor Datasheet

-

-

Min: 1

Mult: 1

YES

48

90 ns

ADVANCED MICRO DEVICES INC

AMD

AM29LV641DH90REF

4194304 words

4000000

85 °C

-40 °C

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Transferred

7.97

Yes

NOR TYPE

Flash Memories

CMOS

DUAL

GULL WING

0.5 mm

unknown

R-PDSO-G48

Not Qualified

3.3,3/5 V

INDUSTRIAL

8 MB

0.03 mA

4MX16

16

0.000005 A

67108864 bit

PARALLEL

FLASH

YES

YES

YES

128

32K

YES

AM29LV040B-90EF

Mfr Part No

AM29LV040B-90EF

Cypress Semiconductor Datasheet

-

-

Min: 1

Mult: 1

YES

32

90 ns

ADVANCED MICRO DEVICES INC

AMD

AM29LV040B-90EF

524288 words

512000

85 °C

-40 °C

PLASTIC/EPOXY

TSSOP

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Transferred

5.76

Yes

NOR TYPE

Flash Memories

CMOS

DUAL

GULL WING

0.5 mm

unknown

R-PDSO-G32

Not Qualified

3/3.3 V

INDUSTRIAL

0.03 mA

512KX8

8

0.000005 A

4194304 bit

PARALLEL

FLASH

1000000 Write/Erase Cycles

YES

YES

YES

8

64K

NAND02GW3B2DN6F

Mfr Part No

NAND02GW3B2DN6F

Micron Datasheet

-

-

Min: 1

Mult: 1

YES

48

25000 ns

MICRON TECHNOLOGY INC

Micron Technology Inc

NAND02GW3B2DN6F

3

268435456 words

256000000

85 °C

-40 °C

PLASTIC/EPOXY

TSOP1

TSOP1, TSSOP48,.8,20

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Obsolete

TSOP

30

5.7

Yes

3 V

e3

3A991.B.1.A

SLC NAND TYPE

Matte Tin (Sn)

8542.32.00.51

Flash Memories

CMOS

DUAL

GULL WING

260

1

0.5 mm

unknown

48

R-PDSO-G48

Not Qualified

3.6 V

3/3.3 V

INDUSTRIAL

2.7 V

ASYNCHRONOUS

0.03 mA

256MX8

1.2 mm

8

0.00005 A

2147483648 bit

PARALLEL

FLASH

3 V

NO

NO

YES

2K

128K

2K words

YES

18.4 mm

12 mm

HN58V256AT12E

Mfr Part No

HN58V256AT12E

Renesas Datasheet

-

-

Min: 1

Mult: 1

YES

28

120 ns

RENESAS TECHNOLOGY CORP

Renesas Electronics Corporation

HN58V256AT-12E

Renesas Electronics America Inc

32768 words

32000

70 °C

Bulk

PLASTIC/EPOXY

TSOP1

TSOP1, TSSOP28,.53,22

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Obsolete

TSOP

Active

NOT SPECIFIED

5.77

Yes

3 V

*

Yes

EAR99

8542.32.00.51

EEPROMs

CMOS

DUAL

GULL WING

NOT SPECIFIED

1

0.55 mm

unknown

28

R-PDSO-G28

Not Qualified

5.5 V

3/5 V

COMMERCIAL

2.7 V

ASYNCHRONOUS

0.03 mA

32KX8

1.2 mm

8

0.00002 A

262144 bit

PARALLEL

EEPROM

3 V

100000 Write/Erase Cycles

10 ms

YES

YES

NO

64 words

11.8 mm

8 mm

CAT28C256N-20

Mfr Part No

CAT28C256N-20

Catalyst Semiconductor Datasheet

-

-

Min: 1

Mult: 1

YES

32

200 ns

CATALYST SEMICONDUCTOR INC

Catalyst Semiconductor

CAT28C256N-20

3

32768 words

32000

70 °C

PLASTIC/EPOXY

QCCJ

QCCJ, LDCC32,.5X.6

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

Transferred

QFJ

30

7.74

No

5 V

e0

No

EAR99

Tin/Lead (Sn/Pb)

AUTOMATIC WRITE; PAGE WRITE

8542.32.00.51

EEPROMs

CMOS

QUAD

J BEND

240

1

1.27 mm

unknown

32

R-PQCC-J32

Not Qualified

5.5 V

5 V

COMMERCIAL

4.5 V

ASYNCHRONOUS

0.03 mA

32KX8

3.55 mm

8

0.00015 A

262144 bit

PARALLEL

EEPROM

5 V

10000 Write/Erase Cycles

5 ms

YES

YES

NO

64 words

13.97 mm

11.43 mm

CAT28C64BGI15

Mfr Part No

CAT28C64BGI15

ON Semiconductor Datasheet

-

-

Min: 1

Mult: 1

YES

32

150 ns

ON SEMICONDUCTOR

ON Semiconductor

CAT28C64BGI15

3

8192 words

8000

85 °C

-40 °C

PLASTIC/EPOXY

QCCJ

QCCJ, LDCC32,.5X.6

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

Obsolete

QFJ

40

5.02

Compliant

Yes

5 V

e3

EAR99

Tin (Sn)

8542.32.00.51

EEPROMs

CMOS

QUAD

J BEND

245

1

1.27 mm

unknown

32

R-PQCC-J32

Not Qualified

5.5 V

5 V

INDUSTRIAL

4.5 V

5 V

ASYNCHRONOUS

0.03 mA

8KX8

3.55 mm

8

0.0001 A

65536 bit

PARALLEL

EEPROM

5 V

100000 Write/Erase Cycles

5 ms

YES

YES

NO

32 words

13.965 mm

11.425 mm

Lead Free

AT28C16E-15DC

Mfr Part No

AT28C16E-15DC

Atmel Datasheet

-

-

Min: 1

Mult: 1

NO

24

150 ns

ATMEL CORP

Atmel Corporation

AT28C16E-15DC

2048 words

2000

70 °C

CERAMIC, GLASS-SEALED

DIP

DIP, DIP24,.6

DIP24,.6

RECTANGULAR

IN-LINE

Obsolete

DIP

NOT SPECIFIED

5.49

Non-Compliant

No

5 V

e0

No

EAR99

Tin/Lead (Sn/Pb)

AUTOMATIC WRITE; 100K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS

8542.32.00.51

EEPROMs

CMOS

DUAL

THROUGH-HOLE

NOT SPECIFIED

1

2.54 mm

unknown

24

R-GDIP-T24

Not Qualified

5.5 V

5 V

COMMERCIAL

4.5 V

ASYNCHRONOUS

0.03 mA

2KX8

3-STATE

5.72 mm

8

0.0001 A

16384 bit

PARALLEL

EEPROM

5 V

100000 Write/Erase Cycles

0.2 ms

10

YES

NO

NO

32.15 mm

15.24 mm