The category is 'Memory'
Memory (240)
- All Manufacturers
- Ihs Manufacturer
- Memory Density
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Organization
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- Package Code
- Package Style
- Reach Compliance Code
- Supply Current-Max
- Supply Current-Max:
0.03 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Contact Plating | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Mfr | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Common Flash Interface | Length | Width | Radiation Hardening | Lead Free |
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![]() | Mfr Part No 27C256-12IP | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 120 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | 27C256-12I/P | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | 0.600 INCH, PLASTIC, DIP-28 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 5.13 | Non-Compliant | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | DATA RETENTION >200 YEARS | 8542.32.00.71 | OTP ROMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 32KX8 | 3-STATE | 4.83 mm | 8 | 0.0001 A | 262144 bit | PARALLEL | COMMON | OTP ROM | 13 V | 36.32 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT29F2G08ABAFAWP:F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Tin | Surface Mount | YES | 48 | 48 | 25 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT29F2G08ABAFAWP:F | SLC NAND | 268435456 words | 256000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | 5.81 | Compliant | Yes | SLC NAND TYPE | 70 °C | 0 °C | Flash Memories | CMOS | DUAL | GULL WING | 0.5 mm | compliant | R-PDSO-G48 | Not Qualified | 3.3 V | 3/3.3 V | COMMERCIAL | Parallel | 3.6 V | 2.7 V | 30 mA | 0.03 mA | 30 ns | 256MX8 | 8 | 29 b | 2 Gb | 0.0001 A | 2147483648 bit | PARALLEL | Asynchronous | 8 b | FLASH | NO | NO | YES | 2K | 128K | 2 kB | YES | No | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GLS29VF020-70-4C-NHE | Greenliant | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | GREENLIANT SYSTEMS LTD | Greenliant Systems Ltd | GLS29VF020-70-4C-NHE | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Contact Manufacturer | 5.74 | Yes | NOR TYPE | Flash Memories | CMOS | QUAD | J BEND | 1.27 mm | compliant | R-PQCC-J32 | Not Qualified | 3/3.3 V | COMMERCIAL | 0.03 mA | 256KX8 | 8 | 0.00003 A | 2097152 bit | PARALLEL | FLASH | YES | YES | NO | 2K | 128 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT29F2G08ABAFAH4:F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Copper, Silver, Tin | Surface Mount | YES | 63 | 63 | 25 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT29F2G08ABAFAH4:F | SLC NAND | 268435456 words | 256000000 | 70 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA63,10X12,32 | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | 5.81 | Compliant | Yes | SLC NAND TYPE | 70 °C | 0 °C | Flash Memories | CMOS | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B63 | Not Qualified | 3.3 V | 3/3.3 V | COMMERCIAL | Parallel | 3.6 V | 2.7 V | 30 mA | 0.03 mA | 30 ns | 256MX8 | 8 | 29 b | 2 Gb | 0.0001 A | 2147483648 bit | PARALLEL | Asynchronous | 8 b | FLASH | NO | NO | YES | 2K | 128K | 2 kB | YES | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT28C16-25PC | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 24 | 250 ns | ATMEL CORP | Atmel Corporation | AT28C16-25PC | 2048 words | 2000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP24,.6 | DIP24,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 5.47 | Compliant | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS | 8542.32.00.51 | EEPROMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | compliant | 24 | R-PDIP-T24 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 2KX8 | 3-STATE | 5.59 mm | 8 | 0.0001 A | 16384 bit | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 1 ms | 10 | YES | NO | NO | 31.9 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CAT28C256NI-12 | ON Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 32 | 120 ns | CATALYST SEMICONDUCTOR INC | Catalyst Semiconductor | CAT28C256NI-12 | 3 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Transferred | QFJ | 30 | 5.04 | Compliant | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | 8542.32.00.51 | EEPROMs | CMOS | QUAD | J BEND | 240 | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | Parallel | 5.5 V | 4.5 V | 32 kB | ASYNCHRONOUS | 0.03 mA | 120 ns | 32KX8 | 3.55 mm | 8 | 256 kb | 0.00015 A | 262144 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 5 ms | YES | YES | NO | 64 words | 13.965 mm | 11.425 mm | No | |||||||||||||||||||||||||||
![]() | Mfr Part No 28C64A-20ISO | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 200 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | 28C64A-20I/SO | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.4 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.75 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; BULK ERASE; DATA RETENTION > 10 YEARS | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 8KX8 | 3-STATE | 8 | 0.0001 A | 65536 bit | PARALLEL | EEPROM | 5 V | 1 ms | 10 | YES | NO | NO | YES | ||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT45W4MW16BCGB-708LWT | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT45W4MW16BCGB-708LWT | 4194304 words | 4000000 | 85 °C | -30 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA54,6X9,30 | BGA54,6X9,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.79 | Yes | 1.8 V | e1 | 3A991.B.2.A | TIN SILVER COPPER | 8542.32.00.41 | Other Memory ICs | CMOS | BOTTOM | BALL | 260 | 1 | 0.75 mm | compliant | 54 | R-PBGA-B54 | Not Qualified | 1.95 V | 1.8,1.8/3 V | OTHER | 1.7 V | SYNCHRONOUS | 0.03 mA | 4MX16 | 3-STATE | 1 mm | 16 | 0.00012 A | 67108864 bit | PARALLEL | COMMON | PSEUDO STATIC RAM | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NM27C040Q150 | National Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 150 ns | NATIONAL SEMICONDUCTOR CORP | National Semiconductor Corporation | NM27C040Q150 | 524288 words | 512000 | 70 °C | CERAMIC, GLASS-SEALED | WDIP | WINDOWED, CERAMIC, DIP-32 | DIP32,.6 | RECTANGULAR | IN-LINE, WINDOW | Transferred | 5.32 | Non-Compliant | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.61 | EPROMs | CMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | R-GDIP-T32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 512KX8 | 3-STATE | 5.969 mm | 8 | 0.0001 A | 4194304 bit | PARALLEL | COMMON | UVPROM | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT29F2G08AACWP:C | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 18 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT29F2G08AACWP:C | 268435456 words | 256000000 | 70 °C | PLASTIC/EPOXY | TSOP1 | LEAD FREE, PLASTIC, TSOP1-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | 30 | 8.52 | Yes | 3.3 V | e3 | 3A991.B.1.A | SLC NAND TYPE | Matte Tin (Sn) | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 256MX8 | 1.2 mm | 8 | 0.00005 A | 2147483648 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 2K | 128K | 2K words | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT28C64E-15DC | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 150 ns | ATMEL CORP | Atmel Corporation | AT28C64E-15DC | 8192 words | 8000 | 70 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 5.8 | Non-Compliant | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; 100K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS | 8542.32.00.51 | EEPROMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | compliant | 28 | R-GDIP-T28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 8KX8 | 3-STATE | 5.72 mm | 8 | 0.0001 A | 65536 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 0.2 ms | 10 | YES | NO | NO | YES | 37.25 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CAT28F010HI-12T | ON Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 32 | 120 ns | CATALYST SEMICONDUCTOR INC | Catalyst Semiconductor | CAT28F010HI-12T | NOR | 2A | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP | 40 | 5.14 | Compliant | Yes | 5 V | Tape & Reel | e3 | EAR99 | NOR TYPE | MATTE TIN | 85 °C | -40 °C | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 5 V | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | Parallel | 5.5 V | 4.5 V | 128 kB | ASYNCHRONOUS | 0.03 mA | 8 b | 128KX8 | 1.2 mm | 8 | 17 b | 1 Mb | 0.0001 A | 1048576 bit | PARALLEL | FLASH | 12 V | 100000 Write/Erase Cycles | NO | NO | YES | 18.4 mm | 8 mm | No | ||||||||||||||||||||||||
![]() | Mfr Part No GLS29VF040-70-4I-NHE | Greenliant | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | GREENLIANT SYSTEMS LTD | Greenliant Systems Ltd | GLS29VF040-70-4I-NHE | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Contact Manufacturer | 5.78 | Yes | e3 | NOR TYPE | Matte Tin (Sn) - annealed | Flash Memories | CMOS | QUAD | J BEND | 1.27 mm | compliant | R-PQCC-J32 | Not Qualified | 3/3.3 V | INDUSTRIAL | 0.03 mA | 512KX8 | 8 | 0.00003 A | 4194304 bit | PARALLEL | FLASH | YES | YES | 4K | 128 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AM29LV641DH90REF | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 90 ns | ADVANCED MICRO DEVICES INC | AMD | AM29LV641DH90REF | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | 7.97 | Yes | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 0.5 mm | unknown | R-PDSO-G48 | Not Qualified | 3.3,3/5 V | INDUSTRIAL | 8 MB | 0.03 mA | 4MX16 | 16 | 0.000005 A | 67108864 bit | PARALLEL | FLASH | YES | YES | YES | 128 | 32K | YES | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AM29LV040B-90EF | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 90 ns | ADVANCED MICRO DEVICES INC | AMD | AM29LV040B-90EF | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | 5.76 | Yes | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 0.5 mm | unknown | R-PDSO-G32 | Not Qualified | 3/3.3 V | INDUSTRIAL | 0.03 mA | 512KX8 | 8 | 0.000005 A | 4194304 bit | PARALLEL | FLASH | 1000000 Write/Erase Cycles | YES | YES | YES | 8 | 64K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NAND02GW3B2DN6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 25000 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | NAND02GW3B2DN6F | 3 | 268435456 words | 256000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | 30 | 5.7 | Yes | 3 V | e3 | 3A991.B.1.A | SLC NAND TYPE | Matte Tin (Sn) | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 256MX8 | 1.2 mm | 8 | 0.00005 A | 2147483648 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 2K | 128K | 2K words | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No HN58V256AT12E | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 120 ns | RENESAS TECHNOLOGY CORP | Renesas Electronics Corporation | HN58V256AT-12E | Renesas Electronics America Inc | 32768 words | 32000 | 70 °C | Bulk | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP28,.53,22 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | Active | NOT SPECIFIED | 5.77 | Yes | 3 V | * | Yes | EAR99 | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.55 mm | unknown | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 3/5 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 32KX8 | 1.2 mm | 8 | 0.00002 A | 262144 bit | PARALLEL | EEPROM | 3 V | 100000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 11.8 mm | 8 mm | |||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CAT28C256N-20 | Catalyst Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 200 ns | CATALYST SEMICONDUCTOR INC | Catalyst Semiconductor | CAT28C256N-20 | 3 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Transferred | QFJ | 30 | 7.74 | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; PAGE WRITE | 8542.32.00.51 | EEPROMs | CMOS | QUAD | J BEND | 240 | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 32KX8 | 3.55 mm | 8 | 0.00015 A | 262144 bit | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 5 ms | YES | YES | NO | 64 words | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CAT28C64BGI15 | ON Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 150 ns | ON SEMICONDUCTOR | ON Semiconductor | CAT28C64BGI15 | 3 | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 40 | 5.02 | Compliant | Yes | 5 V | e3 | EAR99 | Tin (Sn) | 8542.32.00.51 | EEPROMs | CMOS | QUAD | J BEND | 245 | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | 5 V | ASYNCHRONOUS | 0.03 mA | 8KX8 | 3.55 mm | 8 | 0.0001 A | 65536 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 5 ms | YES | YES | NO | 32 words | 13.965 mm | 11.425 mm | Lead Free | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT28C16E-15DC | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 150 ns | ATMEL CORP | Atmel Corporation | AT28C16E-15DC | 2048 words | 2000 | 70 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP24,.6 | DIP24,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 5.49 | Non-Compliant | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; 100K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS | 8542.32.00.51 | EEPROMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | 24 | R-GDIP-T24 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 2KX8 | 3-STATE | 5.72 mm | 8 | 0.0001 A | 16384 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 0.2 ms | 10 | YES | NO | NO | 32.15 mm | 15.24 mm |
27C256-12IP
Microchip
Package:Memory
Price: please inquire
MT29F2G08ABAFAWP:F
Micron
Package:Memory
Price: please inquire
GLS29VF020-70-4C-NHE
Greenliant
Package:Memory
Price: please inquire
MT29F2G08ABAFAH4:F
Micron
Package:Memory
Price: please inquire
AT28C16-25PC
Atmel
Package:Memory
Price: please inquire
CAT28C256NI-12
ON Semiconductor
Package:Memory
Price: please inquire
28C64A-20ISO
Microchip
Package:Memory
Price: please inquire
MT45W4MW16BCGB-708LWT
Micron
Package:Memory
Price: please inquire
NM27C040Q150
National Semiconductor
Package:Memory
Price: please inquire
MT29F2G08AACWP:C
Micron
Package:Memory
Price: please inquire
AT28C64E-15DC
Atmel
Package:Memory
Price: please inquire
CAT28F010HI-12T
ON Semiconductor
Package:Memory
Price: please inquire
GLS29VF040-70-4I-NHE
Greenliant
Package:Memory
Price: please inquire
AM29LV641DH90REF
Cypress Semiconductor
Package:Memory
Price: please inquire
AM29LV040B-90EF
Cypress Semiconductor
Package:Memory
Price: please inquire
NAND02GW3B2DN6F
Micron
Package:Memory
Price: please inquire
HN58V256AT12E
Renesas
Package:Memory
Price: please inquire
CAT28C256N-20
Catalyst Semiconductor
Package:Memory
Price: please inquire
CAT28C64BGI15
ON Semiconductor
Package:Memory
Price: please inquire
AT28C16E-15DC
Atmel
Package:Memory
Price: please inquire
