The category is 'Memory'
Memory (240)
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- Ihs Manufacturer
- Memory Density
- Memory Width
- Number of Terminals
- Number of Words
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- Supply Current-Max
- Supply Current-Max:
0.03 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Active Read Current - Max | Address Bus Width (bit) | Automotive | Base Product Number | Brand | Chip Density (bit) | Clock Frequency-Max (fCLK) | Data Rate Architecture | ECCN (US) | EU RoHS | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Lead Shape | Manufacturer | Manufacturer Part Number | Max. Access Time (ns) | Maximum Operating Supply Voltage (V) | Maximum Operating Temperature | Maximum Operating Temperature (°C) | Memory Types | Mfr | Minimum Operating Supply Voltage (V) | Minimum Operating Temperature | Minimum Operating Temperature (°C) | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of Bits/Word (bit) | Number of Words | Number of Words Code | Operating Current (mA) | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Height | Package Length | Package Shape | Package Style | Package Width | Part Life Cycle Code | Part Package Code | PCB changed | PPAP | Process Technology | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Standard Package Name | Supplier Package | Supplier Temperature Grade | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Typical Operating Supply Voltage (V) | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | Part Status | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Speed | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Product Type | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Output Enable | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Product Category | Memory Organization | Length | Width | Lead Free |
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 | Mfr Part No E28F001BX-T120 | Intel | Datasheet | 532 | - | Min: 1 Mult: 1 | YES | 32 | 120 ns | INTEL CORP | Intel Corporation | E28F001BX-T120 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | TSOP1 | 8 X 20 MM, 1.20 MM HEIGHT, TSOP-32 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | 8.69 | No | 5 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | DEEP POWER-DOWN; TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 128KX8 | 3-STATE | 1.2 mm | 8 | 0.000001 A | 1048576 bit | PARALLEL | FLASH | 12 V | 100000 Write/Erase Cycles | NO | NO | YES | 1,2,1 | 8K,4K,112K | TOP | 18.4 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No EN29LV641L-90TCP | EON Silicon | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 90 ns | EON SILICON SOLUTION INC | Eon Silicon Solution Inc | EN29LV641L-90TCP | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | 5.83 | Non-Compliant | Yes | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 0.5 mm | unknown | R-PDSO-G48 | Not Qualified | 3/3.3 V | COMMERCIAL | 0.03 mA | 4MX16 | 16 | 0.000005 A | 67108864 bit | PARALLEL | FLASH | YES | YES | YES | 128 | 32K | YES | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT29F8G08FACWP | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 23 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT29F8G08FACWP | 1073741824 words | 1000000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | 5.84 | Yes | SLC NAND TYPE | Flash Memories | CMOS | DUAL | GULL WING | 0.5 mm | compliant | R-PDSO-G48 | Not Qualified | 3/3.3 V | COMMERCIAL | 0.03 mA | 1GX8 | 8 | 0.0002 A | 8589934592 bit | PARALLEL | FLASH | NO | NO | YES | 8K | 128K | 2K words | YES | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS29LV032B-90BLI | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 90 ns | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS29LV032B-90BLI | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | LFBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | NOT SPECIFIED | 5.82 | Yes | 3 V | NOR TYPE | BOTTOM BOOT | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 2MX16 | 1.3 mm | 16 | 0.000005 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | BOTTOM | YES | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No W25Q16DVZPBG | Winbond | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 8-WDFN Exposed Pad | YES | 8-WSON (6x5) | 8 | W25Q16 | 80 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W25Q16DVZPBG | Non-Volatile | Winbond Electronics | 16777216 words | 16000000 | 85 °C | -40 °C | Tube | PLASTIC/EPOXY | HVSON | 6 X 5 MM, GREEN, WSON-8 | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Obsolete | SON | Obsolete | NOT SPECIFIED | 5.68 | Yes | 3 V | Automotive grade | -40°C ~ 85°C (TA) | SpiFlash® | e3 | Yes | NOR TYPE | MATTE TIN | Flash Memories | FLASH - NOR | 2.7V ~ 3.6V | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | compliant | 8 | R-PDSO-N8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 16Mbit | SYNCHRONOUS | 104 MHz | 0.03 mA | 6 ns | FLASH | SPI - Quad I/O | 16MX1 | 0.8 mm | 1 | 50µs, 3ms | 0.000025 A | 16777216 bit | AEC-Q100 | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2M x 8 | 6 mm | 5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No HN58C256AFP-10E | HITACHI | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 100 ns | RENESAS ELECTRONICS CORP | Renesas Electronics Corporation | HN58C256AFP-10E | 3 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.45 | SOP28,.45 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 8.59 | Yes | 5 V | Yes | EAR99 | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 32KX8 | 2.5 mm | 8 | 0.00002 A | 262144 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 18.3 mm | 8.4 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No LP62S1024BM-70LLTF | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | AMIC TECHNOLOGY CORP | AMIC Technology | LP62S1024BM-70LLTF | 131072 words | 128000 | 85 °C | -25 °C | PLASTIC/EPOXY | SOP | SOP, SOP32,.56 | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | 5.55 | Yes | 3 V | SRAMs | CMOS | DUAL | GULL WING | 1 | 1.27 mm | unknown | R-PDSO-G32 | Not Qualified | 3.6 V | 3/3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | 0.03 mA | 128KX8 | 3-STATE | 3 mm | 8 | 0.000001 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 20.45 mm | 11.3 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No LP62S1024BV-70LLIF | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | AMIC TECHNOLOGY CORP | AMIC Technology | LP62S1024BV-70LLIF | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP32,.8,20 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | 5.57 | Yes | 3 V | SRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | NOT SPECIFIED | R-PDSO-G32 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 128KX8 | 3-STATE | 1.2 mm | 8 | 0.000001 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | YES | 18.4 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No LP62S1024BV-55LLIF | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | AMIC TECHNOLOGY CORP | AMIC Technology | LP62S1024BV-55LLIF | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP32,.8,20 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | 5.58 | Yes | 3 V | SRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | NOT SPECIFIED | R-PDSO-G32 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 128KX8 | 3-STATE | 1.2 mm | 8 | 0.000001 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | YES | 18.4 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No LP62S1024BM-55LLIF | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | AMIC TECHNOLOGY CORP | AMIC Technology | LP62S1024BM-55LLIF | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP32,.56 | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | 5.58 | Yes | 3 V | SRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | R-PDSO-G32 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 128KX8 | 3-STATE | 3 mm | 8 | 0.000001 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | YES | 20.45 mm | 11.3 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No NAND04GW3B2BN6E | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 25 ns | STMICROELECTRONICS | STMicroelectronics | NAND04GW3B2BN6E | 536870912 words | 512000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP | NOT SPECIFIED | 8.32 | Yes | 3 V | e3/e6 | 3A991.B.1.A | TIN/TIN BISMUTH | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 512MX8 | 1.2 mm | 8 | 0.00005 A | 4294967296 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 4K | 128K | 2K words | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No A29L320ATV-70F | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | AMIC TECHNOLOGY CORP | AMIC Technology | A29L320ATV-70F | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | TSOP1 | NOT SPECIFIED | 5.58 | Yes | 3 V | 3A991.B.1.A | NOR TYPE | TOP BOOT SECTOR | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 2MX16 | OPEN-DRAIN | 1.2 mm | 16 | 0.000005 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | TOP | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No A29L040AL-70F | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | AMIC TECHNOLOGY CORP | AMIC Technology | A29L040AL-70F | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | NOT SPECIFIED | 5.75 | Yes | 3 V | Yes | NOR TYPE | Flash Memories | CMOS | QUAD | J BEND | NOT SPECIFIED | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 512KX8 | 3.4 mm | 8 | 0.000005 A | 4194304 bit | PARALLEL | FLASH | 3 V | 100000 Write/Erase Cycles | YES | YES | YES | 8 | 64K | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 28C16AT-25/L | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 250 ns | MICROCHIP TECHNOLOGY INC | 28C16AT-25/L | 2048 words | 2000 | 70 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | NOT SPECIFIED | 8.77 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; BULK ERASE; 10K ERASE/WRITE CYCLES MIN.; 1MS BYTE WRITE; DATA RETENTION > 10 YEARS | 8542.32.00.51 | QUAD | J BEND | NOT SPECIFIED | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 2KX8 | 3-STATE | 3.56 mm | 8 | 0.0001 A | 16384 bit | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 1 ms | 10 | YES | NO | NO | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No K6X4008C1F-BF55T00 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | 19 | No | 4M | SDR | 3A991.b.2.a | Compliant | SAMSUNG SEMICONDUCTOR INC | Gull-wing | Samsung Semiconductor | K6X4008C1F-BF55T00 | 55 | 5.5 | 85 | 4.5 | -40 | Surface Mount | 8 | 512K | 512000 | 30 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP32,.56 | SOP32,.56 | 2.74 | 20.47 | RECTANGULAR | SMALL OUTLINE | 11.43 | Obsolete | 32 | No | CMOS | 5.81 | Yes | SOP | SOP | Industrial | 5 V | Asynchronous | 5 | Tape and Reel | Obsolete | SRAMs | CMOS | DUAL | GULL WING | 1.27 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 5 V | INDUSTRIAL | 1 | ASYNCHRONOUS | 0.03 mA | 512KX8 | 3-STATE | 8 | 0.000012 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29F160FT55N3E2 | Alliance Memory, Inc. | Datasheet | 838 |
| Min: 1 Mult: 1 | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | YES | 48-TSOP | 48 | 55 ns | 20 mA | M29F160 | Alliance Memory | 96 | MICRON TECHNOLOGY INC | Parallel | Alliance Memory | M29F160FT55N3E2 | + 125 C | Non-Volatile | Alliance Memory, Inc. | - 40 C | Yes | SMD/SMT | 1048576 words | 1000000 | 125 °C | -40 °C | Tray | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | Active | NOT SPECIFIED | 8.54 | Yes | 5.5 V | 4.5 V | 5 V | Asynchronous | Automotive grade | -40°C ~ 125°C (TA) | Tray | Automotive, AEC-Q100 | e3 | Yes | EAR99 | NOR TYPE | Matte Tin (Sn) | TOP BOOT BLOCK | 8542.32.00.51 | Memory & Data Storage | 4.5V ~ 5.5V | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 5.5 V | 5 V | AUTOMOTIVE | 4.5 V | 16Mbit | 55 ns | ASYNCHRONOUS | 0.03 mA | 55 ns | FLASH | Parallel | 8 bit/16 bit | 2 M x 8/1 M x 16 | 1.2 mm | 16 | 55ns | NOR Flash | 0.00012 A | 16777216 bit | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | TOP | YES | NOR Flash | 2M x 8, 1M x 16 | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29F800FB55M3F2 | Alliance Memory, Inc. | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 44-SOIC (0.496", 12.60mm Width) | YES | 44-SO | 44 | 55 ns | 30 mA | M29F800 | Alliance Memory | 500 | MICRON TECHNOLOGY INC | Parallel | Alliance Memory | M29F800FB55M3F2 | + 125 C | Non-Volatile | Alliance Memory, Inc. | - 40 C | Yes | SMD/SMT | 524288 words | 512000 | 125 °C | -40 °C | Tape & Reel (TR) | PLASTIC/EPOXY | SOP | SOP, SOP44,.63 | SOP44,.63 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | Obsolete | NOT SPECIFIED | 5.58 | Yes | 5.5 V | 4.5 V | 5 V | Automotive grade | -40°C ~ 125°C (TA) | Cut Tape | Automotive, AEC-Q100 | Yes | EAR99 | NOR TYPE | BOTTOM BOOT BLOCK | 8542.32.00.51 | Memory & Data Storage | 4.5V ~ 5.5V | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 5.5 V | 5 V | AUTOMOTIVE | 4.5 V | 8Mbit | ASYNCHRONOUS | 0.03 mA | 55 ns | FLASH | 8 bit/16 bit | 1 M x 8/512 k x 16 | 3 mm | 16 | 55ns | NOR Flash | 0.00012 A | 8388608 bit | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | YES | NOR Flash | 1M x 8, 512K x 16 | 28.5 mm | 12.6 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29LV116DT-90EC | AMD | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 90 ns | ADVANCED MICRO DEVICES INC | AMD | AM29LV116DT-90EC | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | TSOP1 | MO-142CD, TSOP-40 | TSSOP40,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP1 | 7.9 | No | 3 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | 40 | R-PDSO-G40 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 2MX8 | 1.2 mm | 8 | 0.000005 A | 16777216 bit | PARALLEL | FLASH | 3 V | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | TOP | YES | 18.4 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29LV640DU90RWHF | AMD | Datasheet | 5791 | - | Min: 1 Mult: 1 | YES | 63 | 90 ns | SPANSION INC | Miscellaneous | AM29LV640DU90RWHF | 3 | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 12 X 11 MM, 0.80 MM PITCH, LEAD FREE, FBGA-63 | BGA63,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 40 | 5.67 | Yes | 3.3 V | e1 | Yes | 3A991.B.1.A | NOR TYPE | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 63 | R-PBGA-B63 | Not Qualified | 3.6 V | 3.3,3/5 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.03 mA | 4MX16 | 1.2 mm | 16 | 0.000005 A | 67108864 bit | PARALLEL | FLASH | 3 V | YES | YES | YES | 128 | 32K | YES | BOTTOM/TOP | YES | 12 mm | 11 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29LV010B-90ED | AMD | Datasheet | 22 | - | Min: 1 Mult: 1 | YES | 32 | 90 ns | FUJITSU LTD | FUJITSU Limited | AM29LV010B-90ED | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP32,.8,20 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | 5.79 | Yes | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 0.5 mm | compliant | R-PDSO-G32 | Not Qualified | 3/3.3 V | COMMERCIAL | 0.03 mA | 128KX8 | 8 | 0.000005 A | 1048576 bit | PARALLEL | FLASH | 1000000 Write/Erase Cycles | YES | YES | YES | 8 | 16K |
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E28F001BX-T120
Intel
Package:Memory
Price: please inquire
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EN29LV641L-90TCP
EON Silicon
Package:Memory
Price: please inquire
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MT29F8G08FACWP
Micron Technology
Package:Memory
Price: please inquire
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IS29LV032B-90BLI
ISSI
Package:Memory
Price: please inquire
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W25Q16DVZPBG
Winbond
Package:Memory
Price: please inquire
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HN58C256AFP-10E
HITACHI
Package:Memory
Price: please inquire
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LP62S1024BM-70LLTF
AMIC Technology
Package:Memory
Price: please inquire
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LP62S1024BV-70LLIF
AMIC Technology
Package:Memory
Price: please inquire
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LP62S1024BV-55LLIF
AMIC Technology
Package:Memory
Price: please inquire
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LP62S1024BM-55LLIF
AMIC Technology
Package:Memory
Price: please inquire
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NAND04GW3B2BN6E
Micron Technology
Package:Memory
Price: please inquire
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A29L320ATV-70F
AMIC Technology
Package:Memory
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A29L040AL-70F
AMIC Technology
Package:Memory
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28C16AT-25/L
Microchip
Package:Memory
Price: please inquire
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K6X4008C1F-BF55T00
Samsung Semiconductor
Package:Memory
Price: please inquire
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M29F160FT55N3E2
Alliance Memory, Inc.
Package:Memory
10.765878
-
M29F800FB55M3F2
Alliance Memory, Inc.
Package:Memory
Price: please inquire
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AM29LV116DT-90EC
AMD
Package:Memory
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AM29LV640DU90RWHF
AMD
Package:Memory
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AM29LV010B-90ED
AMD
Package:Memory
Price: please inquire