The category is 'Memory'
Memory (240)
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- Memory Width
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- Supply Current-Max:
0.03 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Contact plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of pins | Number of Pins | Supplier Device Package | Material | Number of Terminals | Access Time-Max | Active Read Current - Max | Base Product Number | Brand | Capacitors series | Case - inch | Case - mm | Case Size | Case Style | Connections | Connector | Connector pinout layout | Contacts pitch | Electrical mounting | Factory Pack QuantityFactory Pack Quantity | Gross weight | Ihs Manufacturer | Inner diameter | Interface Type | Kind of capacitor | Kind of connector | Manufacturer | Manufacturer Part Number | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of Words | Number of Words Code | Operating Temp Range | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Depth (mm) | Product Status | Rad Hardened | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Spatial orientation | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Transport package size/quantity | Type of capacitor | Type of connector | Usage Level | Operating temperature | Operating Temperature | Packaging | Series | Size / Dimension | Tolerance | JESD-609 Code | Pbfree Code | Part Status | Number of Terminations | ECCN Code | Temperature Coefficient | Type | Resistance | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Composition | Power (Watts) | Additional Feature | HTS Code | Capacitance | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Current rating | Frequency | Time@Peak Reflow Temperature-Max (s) | Frequency Stability | Pin Count | JESD-30 Code | Qualification Status | Dielectric | ESR (Equivalent Series Resistance) | Failure Rate | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Load Capacitance | Number of Ports | Nominal Supply Current | Speed | Operating Mode | Frequency Tolerance | Supply Current-Max | Accuracy | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Memory IC Type | Programming Voltage | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Standby Voltage-Min | Rated voltage | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Output Enable | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Profile | Features | Operating voltage | Product Category | Memory Organization | Product Length (mm) | Diameter | Height | Height Seated (Max) | Length | Width | Plating thickness | Product Height (mm) | Flammability rating | Ratings |
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![]() | Mfr Part No A29L320ATV-70UF | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | CSON | YES | 48 | 70 ns | AMIC TECHNOLOGY CORP | AMIC Technology | A29L320ATV-70UF | 2097152 words | 2000000 | -20C to 70C | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | TSOP1 | 5(mm) | No | NOT SPECIFIED | 5.5 | Yes | 3.3 V | Commercial grade | 3A991.B.1.A | NOR TYPE | TOP BOOT SECTOR | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.03 mA | 2MX16 | OPEN-DRAIN | 1.2 mm | 16 | 0.000005 A | 33554432 bit | COMMERCIALC | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | TOP | YES | 7(mm) | 18.4 mm | 12 mm | 1.4(mm) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NAND01GW3A2CN6F | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 35 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | NAND01GW3A2CN6F | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | 5.84 | Yes | SLC NAND TYPE | Flash Memories | CMOS | DUAL | GULL WING | 0.5 mm | unknown | R-PDSO-G48 | Not Qualified | 3/3.3 V | INDUSTRIAL | 0.03 mA | 128MX8 | 8 | 0.00005 A | 1073741824 bit | PARALLEL | FLASH | NO | NO | YES | 8K | 16K | 512 words | YES | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AM29LV160DT-120SC | AMD | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 44 | 44 | 120 ns | ADVANCED MICRO DEVICES INC | Altech | 002641015 | NOR | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOP | MO-180AA, SOP-44 | SOP44,.63 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | 5.47 | Non-Compliant | No | 3 V | e0 | NOR TYPE | Tin/Lead (Sn/Pb) | 70 °C | 0 °C | Flash Memories | CMOS | DUAL | GULL WING | 1 | 1.27 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | Parallel | 3.6 V | 2.7 V | 16 mA | ASYNCHRONOUS | 0.03 mA | 120 ns | 1MX16 | 2.8 mm | 16 | 16 Mb | 0.000005 A | 16777216 bit | PARALLEL | Asynchronous | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | TOP | YES | 28.2 mm | 13.3 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AM29LV001BB-45RJC | AMD | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 45 ns | 5 Inches | Center Back Mount | 1/2 NPT | ADVANCED MICRO DEVICES INC | Dwyer Instruments | GBTB540151 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Transferred | LCC | 5.29 | No | 3.3 V | e0 | EAR99 | Analog | Tin/Lead (Sn/Pb) | MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION | 8542.32.00.51 | Flash Memories | CMOS | QUAD | J BEND | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.03 mA | 1 Percent | 128KX8 | 3.556 mm | 8 | 0.000005 A | 1048576 bit | PARALLEL | FLASH | 3 V | 20 | YES | YES | YES | 1,2,7 | 8K,4K,16K | BOTTOM | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M29F400FB55N3E2 | Alliance Memory | Datasheet | 386 |
| Min: 1 Mult: 1 | Surface Mount | 48-TFSOP (0.724, 18.40mm Width) | YES | 48-TSOP | Polyamide | 48 | 55 ns | 20 mA | M29F400 | Alliance Memory | 96 | MICRON TECHNOLOGY INC | Parallel | Alliance Memory | M29F400FB55N3E2 | + 125 C | Non-Volatile | Alliance Memory, Inc. | - 40 C | Yes | SMD/SMT | 262144 words | 256000 | 125 °C | -40 °C | Tray | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | Active | 30 | 8.31 | Non-Compliant | Yes | 5.5 V | 4.5 V | 5 V | Asynchronous | Automotive grade | -40°C ~ 125°C (TA) | Tray | Automotive, AEC-Q100 | e3 | Yes | EAR99 | NOR TYPE | Matte Tin (Sn) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Memory & Data Storage | FLASH - NOR | 4.5V ~ 5.5V | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 5.5 V | 5 V | AUTOMOTIVE | 4.5 V | 4Mbit | 55 ns | ASYNCHRONOUS | 0.03 mA | 55 ns | FLASH | Parallel | 8 bit/16 bit | 512 k x 8/256 k x 16 | 1.2 mm | 16 | 55ns | NOR Flash | 0.00012 A | 4194304 bit | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | BOTTOM | YES | NOR Flash | 512K x 8, 256K x 16 | 8 mm | 12 mm | 7.4 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No E28F020120 | Intel | Datasheet | 4640 |
| Min: 1 Mult: 1 | Surface Mount | 32-SOP | YES | 32-TSOP | 32 | 120 ns | INTEL CORP | Intel Corporation | E28F020-120 | Non-Volatile | Intel | 262144 words | 256000 | 70 °C | Bulk | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP32,.8,20 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | Active | NOT SPECIFIED | 5.27 | No | 5 V | 0°C ~ 70°C (TA) | M28F020 | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | MINIMUM 100K ERASE/PROGRAM CYCLES | 8542.32.00.51 | Flash Memories | FLASH - NOR (SLC) | 4.75V ~ 5.25V | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 2Mbit | ASYNCHRONOUS | 0.03 mA | 120 ns | FLASH | Parallel | 256KX8 | 1.2 mm | 8 | 120ns | 0.0001 A | 2097152 bit | PARALLEL | FLASH | 12 V | 100000 Write/Erase Cycles | NO | NO | YES | 256K x 8 | 18.4 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT27C1024-10JC | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 100 ns | ATMEL CORP | Atmel Corporation | AT27C1024-10JC | 2 | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC44,.7SQ | LDCC44,.7SQ | SQUARE | CHIP CARRIER | Obsolete | LCC | NOT SPECIFIED | 5.64 | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | OTP ROMs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | compliant | 44 | S-PQCC-J44 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 64KX16 | 3-STATE | 4.57 mm | 16 | 0.0001 A | 1048576 bit | PARALLEL | COMMON | OTP ROM | 16.5862 mm | 16.5862 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M29F200FB5AM6E2 | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 55 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29F200FB5AM6E2 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP-44 | SOP44,.63 | RECTANGULAR | SMALL OUTLINE | Active | SOIC | 30 | 5.7 | Yes | 5 V | Automotive grade | Yes | EAR99 | NOR TYPE | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | Parallel | ASYNCHRONOUS | 0.03 mA | 55 | 128KX16 | 3 mm | 16 | 0.00012 A | 2 | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,3 | 16K,8K,32K,64K | YES | BOTTOM | YES | 28.5 mm | 12.6 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No 28C64AF-15I/P | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 150 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | 28C64AF-15I/P | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 8.67 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; BULK ERASE; DATA RETENTION > 10 YEARS | 8542.32.00.51 | EEPROMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 8KX8 | 3-STATE | 4.83 mm | 8 | 0.0001 A | 65536 bit | PARALLEL | EEPROM | 5 V | 0.2 ms | 10 | YES | NO | NO | YES | 36.32 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No LP62S4096EX-55LLTF | NXP | Datasheet | - | - | Min: 1 Mult: 1 | Axial | YES | Axial | 32 | 55 ns | AMIC TECHNOLOGY CORP | AMIC Technology | LP62S4096EX-55LLTF | 524288 words | 512000 | 85 °C | -25 °C | PLASTIC/EPOXY | LSSOP | LSSOP, TSSOP32,.56,20 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | Obsolete | 5.82 | Yes | 3 V | -55°C ~ 175°C | Bulk | CMF | 0.145 Dia x 0.344 L (3.68mm x 8.74mm) | ±0.5% | Active | 2 | ±25ppm/°C | 2.2 kOhms | Metal Film | 1W | SRAMs | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | R-PDSO-G32 | Not Qualified | -- | 3.6 V | 3/3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | 0.03 mA | 512KX8 | 3-STATE | 1.25 mm | 8 | 0.000003 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | Flame Retardant Coating, Moisture Resistant, Safety | -- | 11.8 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NM27C010VE150 | ON Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 150 ns | FAIRCHILD SEMICONDUCTOR CORP | Fairchild Semiconductor Corporation | NM27C010VE150 | CompactFlash® | Apacer Memory America | 131072 words | 128000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | Active | NOT SPECIFIED | 5.23 | No | 5 V | -40°C ~ 85°C | Industrial CF | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | OTP ROMs | SLC | QUAD | J BEND | NOT SPECIFIED | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | 8GB | - | ASYNCHRONOUS | 0.03 mA | 128KX8 | 3-STATE | 3.56 mm | 8 | 0.0001 A | 1048576 bit | PARALLEL | COMMON | OTP ROM | 13.995 mm | 11.455 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No HN58C256AFP-85E | HITACHI | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 4-SOJ, 5.5mm pitch | YES | 28 | 85 ns | RENESAS ELECTRONICS CORP | Renesas Electronics Corporation | HN58C256AFP-85E | Suntsu Electronics, Inc. | 3 | 32768 words | 32000 | 70 °C | Bulk | PLASTIC/EPOXY | SOP | SOP, SOP28,.45 | SOP28,.45 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | Active | NOT SPECIFIED | 5.76 | Yes | 5 V | -10°C ~ 60°C | SXT834 | 0.315 L x 0.150 W (8.00mm x 3.80mm) | Yes | EAR99 | MHz Crystal | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 29.4912 MHz | ±20ppm | 28 | R-PDSO-G28 | Not Qualified | 60 Ohms | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 18pF | Fundamental | ±20ppm | 0.03 mA | 32KX8 | 2.5 mm | 8 | 0.00002 A | 262144 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 0.098 (2.50mm) | 18.3 mm | 8.4 mm | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CAT28F512PI-90 | Emerson | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 90 ns | ON SEMICONDUCTOR | ON Semiconductor | CAT28F512PI-90 | 65536 words | 64000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | PLASTIC, DIP-32 | DIP32,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | 30 | 5.71 | Yes | No | 5 V | e0 | No | EAR99 | NOR TYPE | TIN LEAD | 8542.32.00.51 | Flash Memories | CMOS | DUAL | THROUGH-HOLE | 240 | 1 | 2.54 mm | compliant | 32 | R-PDIP-T32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 64KX8 | 5.08 mm | 8 | 0.00001 A | 524288 bit | PARALLEL | FLASH | 12 V | 100000 Write/Erase Cycles | NO | NO | YES | 42.03 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CAT28F512N-90T | ON Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 90 ns | ON SEMICONDUCTOR | ON Semiconductor | CAT28F512N-90T | 1 | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | NOT SPECIFIED | 5.24 | Yes | No | 5 V | EAR99 | NOR TYPE | 100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 10 YEARS | 8542.32.00.51 | Flash Memories | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 64KX8 | 3.55 mm | 8 | 0.00001 A | 524288 bit | PARALLEL | FLASH | 12 V | 100000 Write/Erase Cycles | 10 | NO | NO | YES | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M28C64-150P1 | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 150 ns | STMICROELECTRONICS | STMicroelectronics | M28C64-150P1 | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | 5.92 | No | 5 V | e0 | Tin/Lead (Sn/Pb) | EEPROMs | CMOS | DUAL | THROUGH-HOLE | 2.54 mm | not_compliant | R-PDIP-T28 | Not Qualified | 5 V | COMMERCIAL | 0.03 mA | 8KX8 | 8 | 0.0001 A | 65536 bit | PARALLEL | EEPROM | YES | YES | NO | 64 words | YES | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NM27C020V120 | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 120 ns | FAIRCHILD SEMICONDUCTOR CORP | Fairchild Semiconductor Corporation | NM27C020V120 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | NOT SPECIFIED | 5.77 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | OTP ROMs | CMOS | QUAD | J BEND | NOT SPECIFIED | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 256KX8 | 3-STATE | 3.56 mm | 8 | 0.0001 A | 2097152 bit | PARALLEL | COMMON | OTP ROM | 13.995 mm | 11.455 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M29F200FT5AN6T2 | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 55 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M29F200FT5AN6T2 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Active | 5.72 | No | 5 V | Automotive grade | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | not_compliant | R-PDSO-G48 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 128KX16 | 1.2 mm | 16 | 0.00012 A | 2097152 bit | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,3 | 16K,8K,32K,64K | YES | TOP | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No RMLV0816BGBG-4S2 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | gold-plated | YES | 12 | 48 | 45 ns | socket | 1x12 | 2.54mm | SMT | 0.68 g | RENESAS ELECTRONICS CORP | female | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 0.75 MM PITCH, FBGA-48 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | straight | 3 V | pin strips | -40...163°C | 3A991.B.2.A | IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS | 8542.32.00.41 | BOTTOM | BALL | 1 | 0.75 mm | compliant | 3A | R-PBGA-B48 | 3.6 V | INDUSTRIAL | 2.7 V | 1 | ASYNCHRONOUS | 0.03 mA | 512KX16 | 3-STATE | 1.2 mm | 16 | 0.00001 A | 8388608 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | 150V | YES | beryllium copper | 8.5 mm | 7.5 mm | 0.75µm | UL94V-0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No SMJ27C010A-12JM | Texas Instruments | Datasheet | 40 | - | Min: 1 Mult: 1 | NO | nylon PA66, white | 32 | 120 ns | KGM | 1206 | 3216 | 0.17 | TEXAS INSTRUMENTS INC | d = 8 (+/-0.7) mm | MLCC | SMD | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | WDIP | WDIP, DIP32,.6 | DIP32,.6 | RECTANGULAR | IN-LINE, WINDOW | Transferred | DIP | No | 5 V | 48*31.5*27/75000 | ceramic | -55...125°C | ±1% | 3A001.A.2.C | Nylon washer | 8542.32.00.61 | 0.47nF | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | not_compliant | NOT SPECIFIED | 32 | R-GDIP-T32 | Not Qualified | C0G (NP0) | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.03 mA | 128KX8 | 3-STATE | 4.91 mm | 8 | 0.0001 A | 1048576 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | UVPROM | 25V | D = 16 (+/-0.4) mm | h = 1.15* (* - dimensions are given without allowances and may slightly differ from those indicated) mm | 41.91 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS62WV20488BLL-25TLI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | YES | 44 | 25 ns | INTEGRATED SILICON SOLUTION INC | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | TSOP2 | Yes | 3 V | e3 | Yes | 3A991.B.2.A | MATTE TIN | 8542.32.00.41 | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 10 | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | INDUSTRIAL | 2.4 V | ASYNCHRONOUS | 0.03 mA | 2MX8 | 3-STATE | 1.2 mm | 8 | 0.0015 A | 16777216 bit | PARALLEL | COMMON | STANDARD SRAM | 1.2 V | 18.415 mm | 10.16 mm |
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