The category is 'Memory'
Memory (240)
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- Ihs Manufacturer
- Memory Density
- Memory Width
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- Number of Words
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- Supply Current-Max
- Supply Current-Max:
0.03 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Material | Shape | Package Cooled | Material Finish | Number of Terminals | Access Time-Max | Active Read Current - Max | Base Product Number | Block Organization | Brand | Cell Type | Clock Frequency-Max (fCLK) | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Typical Operating Supply Voltage | Unit Weight | Usage Level | Operating Temperature | Packaging | Series | Size / Dimension | Tolerance | JESD-609 Code | Pbfree Code | Part Status | Number of Terminations | ECCN Code | Temperature Coefficient | Type | Resistance | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Composition | Power (Watts) | Additional Feature | HTS Code | Capacitance | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Failure Rate | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Attachment Method | Height Off Base (Height of Fin) | Thermal Resistance @ Forced Air Flow | Load Capacitance | Nominal Supply Current | Speed | Operating Mode | Supply Current-Max | Access Time | Memory Format | Memory Interface | Architecture | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | ESR | Memory Density | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Output Enable | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Thermal Resistance @ Natural | Power Dissipation @ Temperature Rise | Features | Product Category | Memory Organization | Diameter | Height Seated (Max) | Length | Width | Radiation Hardening | Lead Free |
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 | Mfr Part No MX23L25611MC-10 | Macronix International Co Ltd | Datasheet | 19496 | - | Min: 1 Mult: 1 | YES | 70 | 100 ns | MACRONIX INTERNATIONAL CO LTD | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | SSOP | SSOP, SOP70,.63,32 | SOP70,.63,32 | RECTANGULAR | SMALL OUTLINE, SHRINK PITCH | Obsolete | SSOP | No | 3.3 V | EAR99 | 8542.32.00.71 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | 70 | R-PDSO-G70 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.03 mA | 16MX16 | 3.05 mm | 16 | 0.001 A | 268435456 bit | PARALLEL | MASK ROM | 8 | 28.5 mm | 12.6 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT25F1024AN-10SU-2.7 | Adesto | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 8 | 33 MHz | ATMEL CORP | Atmel Corporation | AT25F1024AN-10SU-2.7 | 1 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 40 | 8.54 | Compliant | Yes | 3 V | e3 | Yes | EAR99 | Matte Tin (Sn) | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | unknown | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.03 mA | 128KX8 | 1.75 mm | 8 | 0.00001 A | 1048576 bit | SERIAL | FLASH | 2.7 V | SPI | 10000 Write/Erase Cycles | HARDWARE/SOFTWARE | 4.9 mm | 3.9 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No EN29LV320T-70TIP | EON Silicon | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 48 | 70 ns | EON SILICON SOLUTION INC | Eon Silicon Solution Inc | EN29LV320T-70TIP | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | 5.83 | Compliant | Yes | 3.3 V | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 0.5 mm | unknown | R-PDSO-G48 | Not Qualified | 3.3 V | INDUSTRIAL | 0.03 mA | 2MX16 | 16 | 0.000005 A | 33554432 bit | PARALLEL | FLASH | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | TOP | YES | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N28F010-65 | Intel | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 65 ns | INTEL CORP | N28F010-65 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 5.85 | No | 5 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | 100000 ERASE/PROGRAM CYCLES | 8542.32.00.51 | QUAD | J BEND | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 128KX8 | 3-STATE | 3.56 mm | 8 | 0.0001 A | 1048576 bit | PARALLEL | FLASH | 12 V | 100000 Write/Erase Cycles | NO | NO | YES | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CAT28C64BT14I-15 | Catalyst Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 150 ns | ITT Cannon | 1 | CATALYST SEMICONDUCTOR INC | ITT Cannon | CAT28C64BT14I-15 | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP32,.56,20 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | 8.84 | Details | No | 5 V | KPT | e0 | Tin/Lead (Sn/Pb) | D-Sub Connectors | CMOS | DUAL | GULL WING | 0.5 mm | unknown | R-PDSO-G32 | Not Qualified | 5 V | INDUSTRIAL | 0.03 mA | 8KX8 | 8 | D-Sub Connectors - Standard Density | 0.0001 A | 65536 bit | PARALLEL | EEPROM | 10000 Write/Erase Cycles | 5 ms | YES | YES | NO | 32 words | D-Sub Standard Connectors | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CAT28F010PI-90 | ON Semiconductor | Datasheet | 1600 | - | Min: 1 Mult: 1 | NO | 32 | 90 ns | CATALYST SEMICONDUCTOR INC | MOXIE INDUCTOR CORPORATION | CAT28F010PI-90 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | PLASTIC, DIP-32 | DIP32,.6 | RECTANGULAR | IN-LINE | Transferred | DIP | 30 | 5.24 | Y | No | 5 V | Epoxy Coated Cores | 21.08mm x 21.34mm | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | 8542.32.00.51 | Inductance - 15uH | Flash Memories | CMOS | DUAL | THROUGH-HOLE | 240 | 1 | 2.54 mm | unknown | 32 | R-PDIP-T32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | Rated Current: 9.5A | ASYNCHRONOUS | 0.03 mA | 128KX8 | 3-STATE | 5.08 mm | 8 | 0.0001 A | DCR - 0.013-Ohm | 1048576 bit | PARALLEL | FLASH | 12 V | 100000 Write/Erase Cycles | NO | NO | YES | 42.03 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CAT28C64BN-12 | Catalyst Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 120 ns | Sunbank / Souriau | 25 | ON SEMICONDUCTOR | Sunbank | CAT28C64BN-12 | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | NOT SPECIFIED | 5.63 | No | 5 V | e0 | TIN LEAD | Circular Connectors | CMOS | QUAD | J BEND | NOT SPECIFIED | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 8KX8 | 3.55 mm | 8 | Circular MIL Spec Backshells | 0.0001 A | 65536 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 5 ms | YES | YES | NO | 32 words | Circular MIL Spec Backshells | 13.965 mm | 11.425 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No NAND04GW3B2DZL6F | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 20 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | NAND04GW3B2DZL6F | 536870912 words | 512000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LGA | LGA, LGA52(UNSPEC) | LGA52(UNSPEC) | GRID ARRAY | Obsolete | 5.82 | Yes | SLC NAND TYPE | Flash Memories | CMOS | BOTTOM | BUTT | unknown | Not Qualified | 3/3.3 V | INDUSTRIAL | 0.03 mA | 512MX8 | 8 | 0.00005 A | 4294967296 bit | PARALLEL | FLASH | NO | NO | YES | 4K | 128K | 2K words | YES | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29F400FB55M3F2 | Alliance Memory, Inc. | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 44-SOIC (0.496", 12.60mm Width) | YES | 44-SO | 44 | 55 ns | 30 mA | M29F400 | Asymmetrical | Alliance Memory | NOR | 500 | MICRON TECHNOLOGY INC | Parallel | Alliance Memory | M29F400FB55M3F2 | 5.5 V | + 125 C | Non-Volatile | Alliance Memory, Inc. | 4.5 V | - 40 C | Yes | Surface Mount | SMD/SMT | 512/256 kWords | 256000 | 125 °C | -40 °C | Tape & Reel (TR) | PLASTIC/EPOXY | SOP | SOP, SOP44,.63 | SOP44,.63 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | Active | NOT SPECIFIED | 7.94 | Yes | SOIC | 5.5 V | 4.5 V | 5 V | Asynchronous | 5 V | 0.521952 oz | Automotive grade | -40°C ~ 125°C (TA) | MouseReel | Automotive, AEC-Q100 | Yes | EAR99 | NOR TYPE | BOTTOM BOOT BLOCK | 8542.32.00.51 | Memory & Data Storage | 4.5V ~ 5.5V | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 5.5 V | 5 V | AUTOMOTIVE | 4.5 V | 4Mbit | ASYNCHRONOUS | 0.03 mA | 55 ns | FLASH | Sectored | 8 bit/16 bit | 512K x 8/256K x 16 | 3 mm | 16 | 55ns | 20 Bit | NOR Flash | 4 Mbit | 0.00012 A | 4194304 bit | Automotive | PARALLEL | FLASH | 4.5 to 5.5 V | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | Yes | YES | NOR Flash | 512K x 8, 256K x 16 | 28.5 mm | 12.6 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29F200FB55M3F2 | Alliance Memory, Inc. | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 44-SOIC (0.496", 12.60mm Width) | YES | 44-SO | 44 | 55 ns | 30 mA | M29F200 | MICRON TECHNOLOGY INC | Parallel | Micron Technology Inc | M29F200FB55M3F2 | + 125 C | Non-Volatile | Alliance Memory, Inc. | - 40 C | SMD/SMT | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP44,.63 | SOP44,.63 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | Active | NOT SPECIFIED | 5.67 | Yes | 5.5 V | 4.5 V | 5 V | Automotive grade | -40°C ~ 125°C (TA) | Automotive, AEC-Q100 | Yes | EAR99 | NOR TYPE | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | 4.5V ~ 5.5V | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 5.5 V | 5 V | AUTOMOTIVE | 4.5 V | 2Mbit | ASYNCHRONOUS | 0.03 mA | 55 ns | FLASH | 8 bit/16 bit | 256 k x 8/128 k x 16 | 3 mm | 16 | 55ns | 0.00012 A | 2097152 bit | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,3 | 16K,8K,32K,64K | YES | BOTTOM | YES | 256K x 8, 128K x 16 | 28.5 mm | 12.6 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29F160FB5AN6F2 | Alliance Memory, Inc. | Datasheet | 24 |
| Min: 1 Mult: 1 | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | YES | 48-TSOP I | 48 | 55 ns | 20 mA | M29F160 | Alliance Memory | 1500 | MICRON TECHNOLOGY INC | Parallel | Alliance Memory | M29F160FB5AN6F2 | + 85 C | Non-Volatile | Alliance Memory, Inc. | - 40 C | Yes | SMD/SMT | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | Active | 30 | 7.24 | Yes | 5.5 V | 4.5 V | 5 V | Asynchronous | 0.029659 oz | Automotive grade | -40°C ~ 85°C (TA) | Cut Tape | Automotive, AEC-Q100 | e3 | Yes | EAR99 | NOR TYPE | Matte Tin (Sn) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Memory & Data Storage | 4.5V ~ 5.5V | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | 16Mbit | 55 ns | ASYNCHRONOUS | 0.03 mA | 55 ns | FLASH | Parallel | 8 bit/16 bit | 2 M x 8/1 M x 16 | 1.2 mm | 16 | 55ns | NOR Flash | 0.00012 A | 16777216 bit | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | BOTTOM | YES | NOR Flash | 2M x 8, 1M x 16 | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No A29L320ATG-70F | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | Nickel Plated Brass with Thermoplastic Elastomer (TPE) Tubular Sealing Insert | 48 | 70 ns | AMIC TECHNOLOGY CORP | AMIC Technology | A29L320ATG-70F | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Contact Manufacturer | BGA | NOT SPECIFIED | 5.58 | Yes | 3 V | 3A991.B.1.A | NOR TYPE | TOP BOOT SECTOR | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 2MX16 | OPEN-DRAIN | 1.2 mm | 16 | 0.000005 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | TOP | YES | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No A29L040AV-70F | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | AMIC TECHNOLOGY CORP | AMIC Technology | A29L040AV-70F | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP32,.8,20 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | NOT SPECIFIED | 5.76 | Yes | 3 V | Yes | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 512KX8 | 1.2 mm | 8 | 0.000005 A | 4194304 bit | PARALLEL | FLASH | 3 V | 100000 Write/Erase Cycles | YES | YES | YES | 8 | 64K | 18.4 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No A29L320ATG70UF | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | AMIC TECHNOLOGY CORP | ABB | ACH550-PDR-031A-2+B058+L511 | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Contact Manufacturer | BGA | NOT SPECIFIED | 5.5 | Yes | 3.3 V | 3A991.B.1.A | NOR TYPE | TOP BOOT SECTOR | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.03 mA | 2MX16 | OPEN-DRAIN | 1.2 mm | 16 | 0.000005 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | TOP | YES | 8 mm | 6 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM28F010A-200PC | AMD | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 200 ns | ADVANCED MICRO DEVICES INC | IDEC | LB8K-31ST7G-1H | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP32,.6 | DIP32,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 8.21 | No | 5 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | 100K WRITE/ERASE CYCLES MIN | 8542.32.00.51 | Flash Memories | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | 32 | R-PDIP-T32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 128KX8 | 3-STATE | 8 | 0.0001 A | 1048576 bit | PARALLEL | FLASH | 12 V | YES | YES | YES | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29LV200BB-120EC | AMD | Datasheet | 136 | - | Min: 1 Mult: 1 | YES | 48 | 120 ns | ADVANCED MICRO DEVICES INC | AMD | AM29LV200BB-120EC | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP1 | 5.27 | No | 3 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION; CAN ALSO BE CONFIGURED AS 128K X 16 | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 128KX16 | 1.2 mm | 16 | 0.000005 A | 2097152 bit | PARALLEL | FLASH | 3 V | 1000000 Write/Erase Cycles | 20 | 8 | YES | YES | YES | 1,2,1,3 | 16K,8K,32K,64K | YES | BOTTOM | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29LV065DU90REI | AMD | Datasheet | 1646 | - | Min: 1 Mult: 1 | Surface Mount | YES | 48 | 48 | 90 ns | ADVANCED MICRO DEVICES INC | AMD | AM29LV065DU90REI | NOR | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | MO-142DD, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP1 | NOT SPECIFIED | 5.31 | Non-Compliant | No | 3.3 V | e0 | 3A991.B.1.A | NOR TYPE | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.3 V | 3.6 V | 3.3,3/5 V | INDUSTRIAL | 3 V | Parallel | 3.6 V | 3 V | 7.6 MB | 30 pF | 16 mA | ASYNCHRONOUS | 0.03 mA | 90 ns | 8MX8 | 1.2 mm | 8 | 23 b | 64 Mb | 0.000005 A | 67108864 bit | PARALLEL | Asynchronous | 8 b | FLASH | 3 V | YES | YES | YES | 128 | 64K | YES | YES | 18.4 mm | 12 mm | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No LP62S1024BX-55LLIF | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | Axial | YES | Axial | 32 | 55 ns | AMIC TECHNOLOGY CORP | AMIC Technology | LP62S1024BX-55LLIF | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP32,.56,20 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | NOT SPECIFIED | 5.58 | Yes | 3 V | -55°C ~ 175°C | Tape & Reel (TR) | CMF | 0.090 Dia x 0.240 L (2.29mm x 6.10mm) | ±0.1% | Active | 2 | ±25ppm/°C | 374 kOhms | Metal Film | 0.5W, 1/2W | SRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | R-PDSO-G32 | Not Qualified | -- | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 128KX8 | 3-STATE | 1.25 mm | 8 | 0.000001 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | YES | Flame Retardant Coating, Moisture Resistant, Safety | -- | 11.8 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M27C1001-25F1 | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | NO | Aluminum | Square, Fins | Assorted (BGA, LGA, CPU, ASIC...) | Blue Anodized | 32 | 250 ns | STMICROELECTRONICS | STMicroelectronics | M27C1001-25F1 | 131072 words | 128000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | WDIP | LEAD FREE, CERAMIC, WINDOWED, FRIT SEALED, DIP-32 | DIP32,.6 | RECTANGULAR | IN-LINE, WINDOW | Obsolete | DIP | NOT SPECIFIED | 5.32 | Yes | 5 V | pushPIN™ | e3 | Yes | Active | EAR99 | Top Mount | Matte Tin (Sn) | 00.1.142 | 8542.32.00.61 | EPROMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | compliant | 32 | R-CDIP-T32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | Push Pin | 0.590 (15.00mm) | 13.38°C/W @ 100 LFM | ASYNCHRONOUS | 0.03 mA | 128KX8 | 3-STATE | 5.72 mm | 8 | 0.0001 A | 1048576 bit | PARALLEL | COMMON | UVPROM | -- | -- | -- | 2.126 (54.01mm) | 2.126 (54.00mm) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No NAND08GW3B2CN1F | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 20 ns | 173109 | MICRON TECHNOLOGY INC | Micron Technology Inc | NAND08GW3B2CN1F | Molex | 1048576 words | 1000000 | 70 °C | Bulk | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | Active | 30 | 5.7 | Yes | 3 V | * | e3 | Yes | EAR99 | SLC NAND TYPE | Matte Tin (Sn) | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 1MX8 | 1.2 mm | 8 | 0.00005 A | 8388608 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 8K | 128K | 2K words | YES | 18.4 mm | 12 mm |
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