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Memory (240)

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Supply Current-Max:
0.03 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Programming Voltage	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Standby Voltage-Min	Alternate Memory Width	Data Polling	Toggle Bit	Command User Interface	Output Enable	Page Size	Ready/Busy	Reverse Pinout	Length	Width
Mfr Part No TMS27C256-12JE	Texas Instruments	Datasheet	-	-	Min: 1 Mult: 1	NO	28	120 ns		TEXAS INSTRUMENTS INC		32768 words	32000	85 °C	-40 °C	CERAMIC, GLASS-SEALED	WDIP	WDIP, DIP28,.6	DIP28,.6	RECTANGULAR	IN-LINE, WINDOW	Obsolete	DIP	No	5 V			EAR99			8542.32.00.61	DUAL	THROUGH-HOLE	NOT SPECIFIED	1	2.54 mm	not_compliant	NOT SPECIFIED	28	R-GDIP-T28	Not Qualified	5.5 V	INDUSTRIAL	4.5 V		ASYNCHRONOUS	0.03 mA	32KX8	3-STATE	4.91 mm	8	0.00025 A	262144 bit		PARALLEL	COMMON	UVPROM	13 V													36.83 mm	15.24 mm
Mfr Part No RMLV0816BGSA-4S2	Renesas Electronics Corporation	Datasheet	-	-	Min: 1 Mult: 1	YES	48	45 ns		RENESAS ELECTRONICS CORP		524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP1	TSOP1,	TSSOP48,.8,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Active			3 V			3A991.B.2.A		IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS	8542.32.00.41	DUAL	GULL WING		1	0.5 mm	compliant			R-PDSO-G48		3.6 V	INDUSTRIAL	2.7 V	1	ASYNCHRONOUS	0.03 mA	512KX16	3-STATE	1.2 mm	16	0.00001 A	8388608 bit		PARALLEL	COMMON	STANDARD SRAM					1.5 V	8				YES				18.4 mm	12 mm
Mfr Part No MU9C5640LF-90TZC	Music Semiconductors Inc	Datasheet	-	-	Min: 1 Mult: 1	YES	32	90 ns		MUSIC SEMICONDUCTORS INC	3	256 words	256	70 °C		PLASTIC/EPOXY	QFP	QFP, QFP32,.35SQ,32	QFP32,.35SQ,32	SQUARE	FLATPACK	Contact Manufacturer		Yes	3.3 V			EAR99			8542.32.00.41	QUAD	GULL WING	260		0.8 mm	unknown			S-PQFP-G32	Not Qualified		COMMERCIAL				0.03 mA	256X64			64	0.002 A	16384 bit				CONTENT ADDRESSABLE SRAM
Mfr Part No M27C4001-45F6	STMicroelectronics	Datasheet	-	-	Min: 1 Mult: 1	NO	32	45 ns		STMICROELECTRONICS		524288 words	512000	85 °C	-40 °C	CERAMIC, METAL-SEALED COFIRED	WDIP	LEAD FREE, CERAMIC, WINDOWED, FRIT SEALED, DIP-32	DIP32,.6	RECTANGULAR	IN-LINE, WINDOW	Obsolete	DIP	Yes	5 V	e3		EAR99	MATTE TIN		8542.32.00.61	DUAL	THROUGH-HOLE		1	2.54 mm	compliant		32	R-CDIP-T32	Not Qualified	5.5 V	INDUSTRIAL	4.5 V		ASYNCHRONOUS	0.03 mA	512KX8	3-STATE	5.72 mm	8	0.0001 A	4194304 bit		PARALLEL	COMMON	UVPROM														41.885 mm	15.24 mm
Mfr Part No TC5517BF-25	Toshiba America Electronic Components	Datasheet	-	-	Min: 1 Mult: 1	YES	24	250 ns		TOSHIBA CORP		2048 words	2000	85 °C	-30 °C	PLASTIC/EPOXY	SOP	SOP, SOP24,.5	SOP24,.5	RECTANGULAR	SMALL OUTLINE	Obsolete		No	5 V	e0		EAR99	Tin/Lead (Sn/Pb)		8542.32.00.41	DUAL	GULL WING			1.27 mm	unknown			R-PDSO-G24	Not Qualified		OTHER			ASYNCHRONOUS	0.03 mA	2KX8	3-STATE		8	0.00003 A	16384 bit		PARALLEL	COMMON	STANDARD SRAM					2 V
Mfr Part No W27E512-55	Winbond Electronics Corp	Datasheet	-	-	Min: 1 Mult: 1	NO	28	55 ns		WINBOND ELECTRONICS CORP		65536 words	64000	70 °C		PLASTIC/EPOXY	DIP	DIP, DIP28,.6	DIP28,.6	RECTANGULAR	IN-LINE	Obsolete	DIP	No	5 V	e0		3A991.B.1.B.2	TIN LEAD		8542.32.00.51	DUAL	THROUGH-HOLE		1	2.54 mm	unknown		28	R-PDIP-T28	Not Qualified	5.5 V	COMMERCIAL	4.5 V		ASYNCHRONOUS	0.03 mA	64KX8		5.33 mm	8	0.0001 A	524288 bit		PARALLEL		EEPROM	12 V						NO	NO	NO					37.08 mm	15.24 mm
Mfr Part No HY62U8100BLLST-10I	SK Hynix Inc	Datasheet	-	-	Min: 1 Mult: 1	YES	32	100 ns		SK HYNIX INC		131072 words	128000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP1	TSOP1, TSSOP32,.56,20	TSSOP32,.56,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP1		3 V	e6		EAR99	TIN BISMUTH		8542.32.00.41	DUAL	GULL WING		1	0.5 mm	unknown		32	R-PDSO-G32	Not Qualified	3.3 V	INDUSTRIAL	2.7 V		ASYNCHRONOUS	0.03 mA	128KX8	3-STATE	1.2 mm	8		1048576 bit		PARALLEL	COMMON	STANDARD SRAM					2 V									11.8 mm	8 mm
Mfr Part No 27C256/BXA-20	Philips Semiconductors	Datasheet	-	-	Min: 1 Mult: 1	NO	28	200 ns		PHILIPS SEMICONDUCTORS		32768 words	32000	125 °C	-55 °C	CERAMIC	DIP	DIP, DIP28,.6	DIP28,.6	RECTANGULAR	IN-LINE	Transferred		No	5 V	e0		3A001.A.2.C	Tin/Lead (Sn/Pb)		8542.32.00.61	DUAL	THROUGH-HOLE			2.54 mm	unknown			R-XDIP-T28	Not Qualified		MILITARY				0.03 mA	32KX8	3-STATE		8	0.0001 A	262144 bit	38535Q/M;38534H;883B		COMMON		12.5 V
Mfr Part No MC68HC34P	Motorola Semiconductor Products	Datasheet	-	-	Min: 1 Mult: 1	NO	40		1.25 MHz	MOTOROLA INC		256 words	256	70 °C		PLASTIC/EPOXY	DIP	DIP-40	DIP40,.6	RECTANGULAR	IN-LINE	Obsolete		No		e0		EAR99	Tin/Lead (Sn/Pb)		8542.32.00.41	DUAL	THROUGH-HOLE			2.54 mm	unknown			R-PDIP-T40	Not Qualified		COMMERCIAL		2, (MUXED)	ASYNCHRONOUS	0.03 mA	256X8	3-STATE		8	0.03 A	2048 bit		PARALLEL		MULTI-PORT SRAM
Mfr Part No K6T4008U1C-GF10	Samsung Semiconductor	Datasheet	-	-	Min: 1 Mult: 1	YES	32	100 ns		SAMSUNG SEMICONDUCTOR INC		524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	SOP	SOP, SOP32,.56	SOP32,.56	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	No	3 V	e0		3A991.B.2.A	TIN LEAD		8542.32.00.41	DUAL	GULL WING		1	1.27 mm	compliant		32	R-PDSO-G32	Not Qualified	3.3 V	INDUSTRIAL	2.7 V		ASYNCHRONOUS	0.03 mA	512KX8	3-STATE	3 mm	8		4194304 bit		PARALLEL	COMMON	STANDARD SRAM					2 V									20.47 mm	11.43 mm
Mfr Part No MC68HCB34P	Motorola Semiconductor Products	Datasheet	-	-	Min: 1 Mult: 1	NO	40		2 MHz	MOTOROLA INC		256 words	256	70 °C		PLASTIC/EPOXY	DIP		DIP40,.6	RECTANGULAR	IN-LINE	Obsolete		No		e0		EAR99	Tin/Lead (Sn/Pb)		8542.32.00.41	DUAL	THROUGH-HOLE			2.54 mm	unknown			R-PDIP-T40	Not Qualified		COMMERCIAL		2, (MUXED)	ASYNCHRONOUS	0.03 mA	256X8	3-STATE		8	0.03 A	2048 bit		PARALLEL		MULTI-PORT SRAM
Mfr Part No M28C64C-200K1	STMicroelectronics	Datasheet	-	-	Min: 1 Mult: 1	YES	32	200 ns		STMICROELECTRONICS		8192 words	8000	70 °C		PLASTIC/EPOXY	QCCJ	QCCJ, LDCC32,.5X.6	LDCC32,.5X.6	RECTANGULAR	CHIP CARRIER	Obsolete	QFJ	No	5 V	e0		EAR99	TIN LEAD	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	8542.32.00.51	QUAD	J BEND		1	1.27 mm	not_compliant		32	R-PQCC-J32	Not Qualified	5.5 V	COMMERCIAL	4.5 V		ASYNCHRONOUS	0.03 mA	8KX8	3-STATE	3.56 mm	8	0.0001 A	65536 bit		PARALLEL		EEPROM	5 V	100000 Write/Erase Cycles	5 ms	40			YES	YES	NO		32 words	YES		13.995 mm	11.455 mm
Mfr Part No 28C04A-25I/P	Microchip Technology Inc	Datasheet	-	-	Min: 1 Mult: 1	NO	24	250 ns		MICROCHIP TECHNOLOGY INC		512 words	512	85 °C	-40 °C	PLASTIC/EPOXY	DIP	0.600 INCH, PLASTIC, DIP-24	DIP24,.6	RECTANGULAR	IN-LINE	Obsolete	DIP	No	5 V	e0		EAR99	TIN LEAD	10K WRITE/ERASE ENDURANCE MIN; DATA RETENTION >200 YEARS	8542.32.00.51	DUAL	THROUGH-HOLE		1	2.54 mm	unknown		24	R-PDIP-T24	Not Qualified	5.5 V	INDUSTRIAL	4.5 V		ASYNCHRONOUS	0.03 mA	512X8	3-STATE	4.83 mm	8	0.0001 A	4096 bit		PARALLEL		EEPROM	5 V	10000 Write/Erase Cycles	1 ms	200			YES	NO	NO					31.75 mm	15.24 mm
Mfr Part No RMLV0816BGBG-4S2	Renesas Electronics Corporation	Datasheet	-	-	Min: 1 Mult: 1	YES	48	45 ns		RENESAS ELECTRONICS CORP		524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	0.75 MM PITCH, FBGA-48	BGA48,6X8,30	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active			3 V			3A991.B.2.A		IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS	8542.32.00.41	BOTTOM	BALL		1	0.75 mm	compliant			R-PBGA-B48		3.6 V	INDUSTRIAL	2.7 V	1	ASYNCHRONOUS	0.03 mA	512KX16	3-STATE	1.2 mm	16	0.00001 A	8388608 bit		PARALLEL	COMMON	STANDARD SRAM					1.5 V					YES				8.5 mm	7.5 mm
Mfr Part No M5M5Y416CWG-70HI	Renesas Electronics Corporation	Datasheet	-	-	Min: 1 Mult: 1	YES	48	70 ns		RENESAS ELECTRONICS CORP		262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	7 X 8.50 MM, CSP-48	BGA48,6X8,30	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Transferred	BGA		2 V			3A991.B.2.A			8542.32.00.41	BOTTOM	BALL		1	0.75 mm	unknown		48	R-PBGA-B48	Not Qualified	2.3 V	INDUSTRIAL	1.65 V		ASYNCHRONOUS	0.03 mA	256KX16	3-STATE	1.06 mm	16		4194304 bit		PARALLEL	COMMON	STANDARD SRAM					1.3 V									8.5 mm	7 mm
Mfr Part No M27C256B-25F1	STMicroelectronics	Datasheet	-	-	Min: 1 Mult: 1	NO	28	150 ns		STMICROELECTRONICS		32768 words	32000	70 °C		CERAMIC, METAL-SEALED COFIRED	WDIP	0.280 INCH, LEAD FREE, CERAMIC, WINDOWED, FRIT SEALED, DIP-28	DIP28,.6	RECTANGULAR	IN-LINE, WINDOW	Obsolete	DIP	Yes	5 V	e3		EAR99	MATTE TIN		8542.32.00.61	DUAL	THROUGH-HOLE		1	2.54 mm	compliant		28	R-CDIP-T28	Not Qualified	5.5 V	COMMERCIAL	4.5 V		ASYNCHRONOUS	0.03 mA	32KX8	3-STATE	5.72 mm	8	0.0002 A	262144 bit		PARALLEL	COMMON	UVPROM	12.75 V													36.92 mm	15.24 mm
Mfr Part No K6T4008U1C-MB10	Samsung Semiconductor	Datasheet	-	-	Min: 1 Mult: 1	YES	32	100 ns		SAMSUNG SEMICONDUCTOR INC		524288 words	512000	70 °C		PLASTIC/EPOXY	TSOP2-R	TSOP2-R, TSOP32,.46	TSOP32,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3 V	e0		3A991.B.2.A	TIN LEAD		8542.32.00.41	DUAL	GULL WING		1	1.27 mm	compliant		32	R-PDSO-G32	Not Qualified	3.3 V	COMMERCIAL	2.7 V		ASYNCHRONOUS	0.03 mA	512KX8	3-STATE	1.2 mm	8		4194304 bit		PARALLEL	COMMON	STANDARD SRAM					2 V								YES	20.95 mm	10.16 mm
Mfr Part No CAT28C257NI-12	Catalyst Semiconductor	Datasheet	-	-	Min: 1 Mult: 1	YES	32	120 ns		CATALYST SEMICONDUCTOR INC	3	32768 words	32000	85 °C	-40 °C	PLASTIC/EPOXY	QCCJ	QCCJ, LDCC32,.5X.6	LDCC32,.5X.6	RECTANGULAR	CHIP CARRIER	Transferred	QFJ	No	5 V	e0		EAR99	TIN LEAD		8542.32.00.51	QUAD	J BEND		1	1.27 mm	unknown		32	R-PQCC-J32	Not Qualified	5.5 V	INDUSTRIAL	4.5 V		ASYNCHRONOUS	0.03 mA	32KX8		3.55 mm	8	0.00015 A	262144 bit		PARALLEL		EEPROM	5 V	100000 Write/Erase Cycles	5 ms				YES	YES	NO		128 words			13.97 mm	11.43 mm
Mfr Part No BR6216B-10LL	ROHM Semiconductor	Datasheet	-	-	Min: 1 Mult: 1	NO	24	100 ns		ROHM CO LTD		2048 words	2000	70 °C		PLASTIC/EPOXY	DIP	0.300 INCH, SKINNY, DIP-24	DIP24,.3	RECTANGULAR	IN-LINE	Obsolete	DIP	Yes	5 V		Yes	EAR99			8542.32.00.41	DUAL	THROUGH-HOLE	NOT SPECIFIED	1	2.54 mm	unknown	NOT SPECIFIED	24	R-PDIP-T24	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.03 mA	2KX8	3-STATE	3.98 mm	8	0.00001 A	16384 bit		PARALLEL	COMMON	STANDARD SRAM					2 V					YES				29.6 mm	7.62 mm
Mfr Part No M28C64C-150P6	STMicroelectronics	Datasheet	-	-	Min: 1 Mult: 1	NO	28	150 ns		STMICROELECTRONICS		8192 words	8000	85 °C	-40 °C	PLASTIC/EPOXY	DIP	DIP, DIP28,.6	DIP28,.6	RECTANGULAR	IN-LINE	Obsolete	DIP	No	5 V	e0		EAR99	TIN LEAD	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	8542.32.00.51	DUAL	THROUGH-HOLE		1	2.54 mm	not_compliant		28	R-PDIP-T28	Not Qualified	5.5 V	INDUSTRIAL	4.5 V		ASYNCHRONOUS	0.03 mA	8KX8	3-STATE	5.08 mm	8	0.0001 A	65536 bit		PARALLEL		EEPROM	5 V	100000 Write/Erase Cycles	5 ms	40			YES	YES	NO		32 words	YES		37.085 mm	15.24 mm

Memory (240)