The category is 'Memory'
Memory (240)
- All Manufacturers
- Ihs Manufacturer
- Memory Density
- Memory Width
- Number of Terminals
- Number of Words
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- Supply Current-Max
- Supply Current-Max:
0.03 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Data Retention | Hardware Data Protection | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Operating Supply Voltage | Memory Types | Mfr | Minimum Operating Supply Voltage | Moisture Sensitivity Levels | Mounting | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Nom (Vsup) | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Memory Format | Memory Interface | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Memory IC Type | Programming Voltage | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Standby Voltage-Min | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Output Enable | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Memory Organization | Length | Width |
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 | Mfr Part No M27V322-100XF1 | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | NO | 42 | 100 ns | STMICROELECTRONICS | 2097152 words | 2000000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | WDIP | 0.315 X 0.630 INCH, ROHS COMPLIANT, CERAMIC, FDIP-42 | DIP42,.6 | RECTANGULAR | IN-LINE, WINDOW | Obsolete | DIP | Yes | 3.3 V | e3 | EAR99 | MATTE TIN | 8542.32.00.61 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | 42 | R-CDIP-T42 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | ASYNCHRONOUS | 0.03 mA | 2MX16 | 3-STATE | 5.72 mm | 16 | 0.00006 A | 33554432 bit | PARALLEL | COMMON | UVPROM | 54.635 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No TS27C64A-20CQ | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 200 ns | STMICROELECTRONICS | 8192 words | 8000 | 70 °C | CERAMIC, GLASS-SEALED | WDIP | CERAMIC, FDIP-28 | DIP28,.6 | RECTANGULAR | IN-LINE, WINDOW | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.61 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 28 | R-GDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 8KX8 | 3-STATE | 5.71 mm | 8 | 0.0001 A | 65536 bit | PARALLEL | COMMON | UVPROM | 12.5 V | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No RMLV1616AGSA-5S2 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 55 ns | RENESAS ELECTRONICS CORP | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | 3 V | 3A991.B.2.A | CAN ALSO BE ORGANISED AS 2M X 8 | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.5 mm | compliant | R-PDSO-G52 | 3.6 V | INDUSTRIAL | 2.7 V | 1 | ASYNCHRONOUS | 0.03 mA | 1MX16 | 1.2 mm | 16 | 0.0003 A | 16777216 bit | PARALLEL | COMMON | STANDARD SRAM | 2.7 V | 8 | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No TD27C256-25 | Intel Corporation | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 250 ns | INTEL CORP | 32768 words | 32000 | 85 °C | -40 °C | CERAMIC | DIP | DIP-28 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.61 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-XDIP-T28 | Not Qualified | INDUSTRIAL | ASYNCHRONOUS | 0.03 mA | 32KX8 | 3-STATE | 8 | 262144 bit | PARALLEL | COMMON | UVPROM | 12.75 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No RMLV0816BGBG-4S2 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 45 ns | RENESAS ELECTRONICS CORP | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 0.75 MM PITCH, FBGA-48 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | 3 V | 3A991.B.2.A | IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS | 8542.32.00.41 | BOTTOM | BALL | 1 | 0.75 mm | compliant | R-PBGA-B48 | 3.6 V | INDUSTRIAL | 2.7 V | 1 | ASYNCHRONOUS | 0.03 mA | 512KX16 | 3-STATE | 1.2 mm | 16 | 0.00001 A | 8388608 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | YES | 8.5 mm | 7.5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No 28C04A-25I/P | Microchip Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 250 ns | MICROCHIP TECHNOLOGY INC | 512 words | 512 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | 0.600 INCH, PLASTIC, DIP-24 | DIP24,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | EAR99 | TIN LEAD | 10K WRITE/ERASE ENDURANCE MIN; DATA RETENTION >200 YEARS | 8542.32.00.51 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 24 | R-PDIP-T24 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 512X8 | 3-STATE | 4.83 mm | 8 | 0.0001 A | 4096 bit | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 1 ms | 200 | YES | NO | NO | 31.75 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No TC58512FTI | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 35 ns | TOSHIBA CORP | 67108864 words | 64000000 | 70 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | 3.3 V | e0 | 3A991.B.1.B.1 | NAND TYPE | TIN LEAD | 8542.32.00.51 | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | OTHER | 2.7 V | ASYNCHRONOUS | 0.03 mA | 64MX8 | 1.2 mm | 8 | 0.0001 A | 536870912 bit | SERIAL | EEPROM | 3 V | NO | NO | YES | 4K | 16K | 512 words | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No CAT28C64BW-15 | Catalyst Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 150 ns | CATALYST SEMICONDUCTOR INC | 1 | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.4 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | Yes | 5 V | e3 | EAR99 | MATTE TIN | 8542.32.00.51 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 8KX8 | 2.65 mm | 8 | 0.0001 A | 65536 bit | PARALLEL | EEPROM | 5 V | 1000000 Write/Erase Cycles | 5 ms | YES | YES | NO | 32 words | 17.9 mm | 7.5 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No RMLV0816BGSA-4S2 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 45 ns | RENESAS ELECTRONICS CORP | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | 3 V | 3A991.B.2.A | IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.5 mm | compliant | R-PDSO-G48 | 3.6 V | INDUSTRIAL | 2.7 V | 1 | ASYNCHRONOUS | 0.03 mA | 512KX16 | 3-STATE | 1.2 mm | 16 | 0.00001 A | 8388608 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | 8 | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS61C5128AS-25QI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 25 ns | INTEGRATED SILICON SOLUTION INC | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP32,.56 | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | Active | SOIC | No | 5 V | e0 | No | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | DUAL | GULL WING | 1 | 1.27 mm | compliant | 32 | R-PDSO-G32 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 512KX8 | 3-STATE | 3 mm | 8 | 0.0009 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2.9 V | 20.445 mm | 11.305 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No BR6216B-10LL | ROHM Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 100 ns | ROHM CO LTD | 2048 words | 2000 | 70 °C | PLASTIC/EPOXY | DIP | 0.300 INCH, SKINNY, DIP-24 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | Yes | 5 V | Yes | EAR99 | 8542.32.00.41 | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | NOT SPECIFIED | 24 | R-PDIP-T24 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.03 mA | 2KX8 | 3-STATE | 3.98 mm | 8 | 0.00001 A | 16384 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 29.6 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No M5M5Y416CWG-70HI | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | RENESAS ELECTRONICS CORP | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 7 X 8.50 MM, CSP-48 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Transferred | BGA | 2 V | 3A991.B.2.A | 8542.32.00.41 | BOTTOM | BALL | 1 | 0.75 mm | unknown | 48 | R-PBGA-B48 | Not Qualified | 2.3 V | INDUSTRIAL | 1.65 V | ASYNCHRONOUS | 0.03 mA | 256KX16 | 3-STATE | 1.06 mm | 16 | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 1.3 V | 8.5 mm | 7 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No M28C64C-150P6 | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 150 ns | STMICROELECTRONICS | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | EAR99 | TIN LEAD | 32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS | 8542.32.00.51 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 8KX8 | 3-STATE | 5.08 mm | 8 | 0.0001 A | 65536 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 5 ms | 40 | YES | YES | NO | 32 words | YES | 37.085 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29LV010B-70JC | AMD | Datasheet | 244 | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | SPANSION INC | Spansion | AM29LV010B-70JC | 3 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | LCC | 30 | 5.28 | No | 3 V | e0 | No | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION | 8542.32.00.51 | Flash Memories | CMOS | QUAD | J BEND | 240 | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 128KX8 | 3.556 mm | 8 | 0.000005 A | 1048576 bit | PARALLEL | FLASH | 3 V | 1000000 Write/Erase Cycles | 20 | YES | YES | YES | 8 | 16K | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29LV160DB-120EI | AMD | Datasheet | 26 | - | Min: 1 Mult: 1 | Surface Mount | YES | 48 | 48 | 120 ns | ADVANCED MICRO DEVICES INC | AMD | AM29LV160DB-120EI | NOR | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP1 | 3.68 | Non-Compliant | No | 3 V | e0 | NOR TYPE | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | Parallel | 3.6 V | 2.7 V | 16 mA | ASYNCHRONOUS | 0.03 mA | 120 ns | 1MX16 | 1.2 mm | 16 | 16 Mb | 0.000005 A | 16777216 bit | PARALLEL | Asynchronous | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GLS29SF040-55-4I-NHE | Greenliant | Datasheet | 2400 | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | GREENLIANT SYSTEMS LTD | Greenliant Systems Ltd | GLS29SF040-55-4I-NHE | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | NOT SPECIFIED | 5.8 | Yes | 5 V | Yes | NOR TYPE | Flash Memories | CMOS | QUAD | J BEND | NOT SPECIFIED | 1.27 mm | compliant | R-PQCC-J32 | Not Qualified | 5 V | INDUSTRIAL | 0.03 mA | 512KX8 | 8 | 0.0001 A | 4194304 bit | PARALLEL | FLASH | 5 V | YES | YES | 4K | 128 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GLS29SF020-55-4C-NHE | Greenliant | Datasheet | 12000 | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | GREENLIANT SYSTEMS LTD | Greenliant Systems Ltd | GLS29SF020-55-4C-NHE | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Contact Manufacturer | 5.74 | Yes | 5 V | NOR TYPE | Flash Memories | CMOS | QUAD | J BEND | 1.27 mm | compliant | R-PQCC-J32 | Not Qualified | 5 V | COMMERCIAL | 0.03 mA | 256KX8 | 8 | 0.0001 A | 2097152 bit | PARALLEL | FLASH | YES | YES | NO | 2K | 128 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CAT28C256NI15 | ON Semiconductor | Datasheet | 54 |
| Min: 1 Mult: 1 | 16 Weeks | Lead, Tin | Surface Mount | Surface Mount | 32-LCC (J-Lead) | YES | 32-PLCC (13.97x11.43) | 32 | 150 ns | CAT28C256 | 100(Min) Year | Yes | ON SEMICONDUCTOR | Parallel | ON Semiconductor | CAT28C256NI-15 | 5.5 V | Non-Volatile | onsemi | 4.5 V | 1 | Surface Mount | 32768 words | 32000 | 85 °C | -40 °C | Bulk | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | Active | NOT SPECIFIED | 5.04 | Compliant | No | PLCC | 5 V | 5.0000 V | Industrial grade | -40 to 85 °C | - | No | NOT SPECIFIED | 85 °C | -40 °C | EEPROMs | EEPROM | 4.5V ~ 5.5V | QUAD | J BEND | 225 | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | Parallel | 5.5 V | 4.5 V | 32 kB | ASYNCHRONOUS | 0.03 mA | 150 ns | EEPROM | Parallel | 32Kx8 | 3.55 mm | 8 | 5ms | 256 Kb | 0.00015 A | 256 | Industrial | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 5 ms | YES | YES | NO | 64 words | 32K x 8 | 13.965 mm | 11.425 mm | ||||||||||||||||||||||
| Mfr Part No AM29LV002B-120EI | AMD | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 120 ns | ADVANCED MICRO DEVICES INC | AMD | AM29LV002B-120EI | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | TSOP-40 | TSSOP40,.8,20 | RECTANGULAR | SMALL OUTLINE | Transferred | TSOP | 5.37 | No | 3 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | EMBEDDED ALGORITHM; BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | 40 | R-PDSO-G40 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 256KX8 | 3-STATE | 8 | 0.000005 A | 2097152 bit | PARALLEL | FLASH | 3 V | YES | YES | YES | 1,2,1,3 | 16K,8K,32K,64K | YES | BOTTOM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29LV010B-90JC | AMD | Datasheet | 1286 | - | Min: 1 Mult: 1 | YES | 32 | 90 ns | ADVANCED MICRO DEVICES INC | AMD | AM29LV010B-90JC | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Transferred | LCC | 4 | No | 3 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION | 8542.32.00.51 | Flash Memories | CMOS | QUAD | J BEND | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 128KX8 | 3.556 mm | 8 | 0.000005 A | 1048576 bit | PARALLEL | FLASH | 3 V | 1000000 Write/Erase Cycles | 20 | YES | YES | YES | 8 | 16K | 13.97 mm | 11.43 mm |
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M27V322-100XF1
STMicroelectronics
Package:Memory
Price: please inquire
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TS27C64A-20CQ
STMicroelectronics
Package:Memory
Price: please inquire
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RMLV1616AGSA-5S2
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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TD27C256-25
Intel Corporation
Package:Memory
Price: please inquire
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RMLV0816BGBG-4S2
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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28C04A-25I/P
Microchip Technology Inc
Package:Memory
Price: please inquire
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TC58512FTI
Toshiba America Electronic Components
Package:Memory
Price: please inquire
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CAT28C64BW-15
Catalyst Semiconductor
Package:Memory
Price: please inquire
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RMLV0816BGSA-4S2
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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IS61C5128AS-25QI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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BR6216B-10LL
ROHM Semiconductor
Package:Memory
Price: please inquire
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M5M5Y416CWG-70HI
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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M28C64C-150P6
STMicroelectronics
Package:Memory
Price: please inquire
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AM29LV010B-70JC
AMD
Package:Memory
Price: please inquire
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AM29LV160DB-120EI
AMD
Package:Memory
Price: please inquire
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GLS29SF040-55-4I-NHE
Greenliant
Package:Memory
Price: please inquire
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GLS29SF020-55-4C-NHE
Greenliant
Package:Memory
Price: please inquire
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CAT28C256NI15
ON Semiconductor
Package:Memory
3.134745
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AM29LV002B-120EI
AMD
Package:Memory
Price: please inquire
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AM29LV010B-90JC
AMD
Package:Memory
Price: please inquire